POWERPACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on patented strip layout, SGS-Thomson has
designed an advanced family of IGBTs with
outstandingperformances.
The built in collector-gate zener exhibits a very
precise active clamping while the gate-emitter
zenersuppliesan ESD protection.
APPLICATIONS
■ AUTOMOTIVEIGNITION
V
CE(sat)
2
PAK(TO-263)
I
C
IGBT
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o lParameterValueUnit
V
V
V
I
CM
P
E
T
(•) Pulsewidth limited by safeoperating area
June 1999
Collect o r -Em i t t er Voltage ( VGS=0)CLAMPEDV
CES
Reverse Bat tery P rotection18V
ECR
Gate-Emitter VoltageCLAMPEDV
GE
I
Collect o r Current (con t inuous) at Tc=25oC20A
C
I
Collect o r Current (con t inuous) at Tc= 100oC20A
C
(•)Collect o r Current (pul sed)60A
Tot al Diss i pat ion at Tc=25oC125W
tot
Derat ing Factor0.83W/
ESD (Human Body M od el)4KV
SD
Sto rage Temperatur e- 65 to 175
stg
T
Max. O pera t ing J unc t ion T emperature175
j
o
C
o
C
o
C
1/8
Page 2
STGB10NB37LZ
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
Ther mal Resistanc e Junct ion-caseMax
Ther mal Resistanc e Junct ion-ambie ntMax
Ther mal Resistanc e Case-sinkTy p
1.2
62.5
0.2
o
C/W
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
=25oC unless otherwise specified)
(T
j
OFF
SymbolParameterTest ConditionsMin.Typ.M ax.Unit
BV
BV
BV
I
I
(CES)
(ECR)
GE
CES
GES
Clamped Volt a geIC= 2 mAVGE=0
=-40to150oC
T
j
Emitter C ollector
Break -down V oltage
Gate Emitter
Break -down V oltage
Collect o r cut-off
Current (VG E = 0)
Gat e- Em i t t er Leak age
IC=75mAVGE=0
=-40to150oC
T
j
IC=± 2mA
=-40to150oC
Τ
j
VCE=15VVGE=0 Tj=150oC
= 200 VVGE=0 Tj= 150oC
V
CE
VGE= ± 10 VVCE=0±0.7mA
375400425V
18V
1216V
10
100
Current (VCE = 0)
R
Gate Emitter Resistance20K
GE
ON(∗)
SymbolParameterTest ConditionsMin.Typ.M ax.Unit
V
GE(th)
V
CE(SAT)
I
Gate Threshold
Voltage
Collector-Emitter
Sat urat ion Voltage
Collect o r CurrentVGE=4.5VVCE=9V20A
C
VCE=VGEIC= 250µA
=-40to150oC
T
j
VGE=4.5V IC=10A Tj=25oC
=4.5V IC=10A Tj=-40oC
V
GE
0.62.4V
1.2
1.8V
1.3
µ
µA
V
A
Ω
DYNAMIC
SymbolParameterTest ConditionsMin.Typ.M ax.Unit
g
C
C
C
Q
2/8
Forward
fs
VCE=25VIC= 10 A1018S
Tr ansc on duc tance
Input Capaci t anc e
ies
Out put Capac it ance
oes
Reverse Tr ansfer
res
VCE=25V f=1MHz VGE= 01250
103
18
Capacit a nc e
Gat e Ch ar geVCE= 320 VIC=10A VGE=5V28nC
G
1700
140
25
pF
pF
pF
Page 3
STGB10NB37LZ
FUNCTIONALCHARACTERISTICS
SymbolParameterTest ConditionsMin.Typ.M ax.Unit
IILat ching C ur rentV
U.I.S.Unc lam pe d Ind uct ive
Switching Current
Func t ion al T e s t
AS
Single Pulse
E
Avalanc h e Energy
E
Revers e Avalanc he
AR
Energy
R
R
R
T
T
T
Tc=125oC duty cycle < 1 %
pulse width lim it ed by t
Information furnished is believedto beaccurate and reliable.However, STMicroelectronics assumesno responsibilityfor the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publicationare
subjectto change without notice.This publication supersedes and replaces all information previouslysupplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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