Datasheet STG3680 Datasheet (ST)

Page 1
LOW VOLTAGE 0.5/0.8MAX DUAL SPDT SWITCH
WITH BREAK BEFORE MAKE FEATURE
HIGH SPEED:
t
= 0.3ns (TYP.) at VCC=3.0V
PD
t
= 0.4ns (TYP.) at VCC=2.3V
PD
ULTRA LOW POWER DISSIPATION:
I
=0.2µA (MAX.)at TA= 85°C
CC
LOW "ON" RESISTANCE V
R R
WIDE OPERATING VOLTAGE RANGE:
V
4.3V TOLERANT AND 1. 8V COMPATIBLE
=0.5Ω (MAX. TA= 25°C) at VCC=2.7V
ON-S1
=0.8Ω (MAX. TA= 25°C) at VCC=2.7V
ON-S2
(OPR) = 1.65V to 4.3V SINGLE SUPPLY
CC
THRESHOLD ON DIGITALCONTROL I NPUT at V
LATCH-UP PERFORMANCE EXCEE DS
= 2.3 to 3. 0V
CC
300mA (JESD 17)
DESCRIPTION
The STG3680 is an high-speed CMOS DUAL ANALOG S.P.D.T. (Single Pole Dual T hrow) SWITCH or DUAL 2:1 Multiplexer/Demultiplexer Bus Switch fabricated in silicon gate C technology. It is designed t o operate from 1.65V to
4.3V, making this device ideal for portable applications. It o ffers very low ON-Resistance (<0.5 2S1 channels; <0.8 V
=2.7V. The nIN inputs are provided to control
CC
1S2 and 2S2 channels) at
the swi tches. The switches nS1 are ON (they are
IN
=0V:
2
MOS
1S1 and
STG3680
QFN
ORDER CODES
PACKAGE T & R
QFN STG3680QTR
connected to c ommon Ports Dn) w hen the nIN input is held high and OFF (high impedance state exists between the two ports) when nIN is held low; the switches nS2 are ON (they are connected to common Ports Dn) when the nIN input is held low and OFF (high impedance state exists between the two ports) when IN is held high. Additional key features are fast switching speed, Break Before Make Delay Time and Ultra Low Power Consumption. All inputs and outp uts are equipped with protection circuits against static discharge, giving them ESD immunity a nd transient excess voltage. It’s available in the commercial temperature range in the QF N package.
PIN CONNECTION
Rev. 3
1/11May 2004
Page 2
STG3680

Figure 1: Input Equivalent Circuit Table 1: Pin Description

QFN
PIN N°
SYMBOL
NAME AND
FUNCTION
1, 9 1IN, 2IN Controls
2, 10 4, 12
1S1 to 2S1 1S2 to 2S2
Independent Chan­nels
3, 11 D1, D2 Common Channels
5,7,8,13,15,16 NC Not Connected
6 GND Ground (0V)
14 V
CC
PositiveSupply Voltage

Table 2: Truth Table

IN SWITCH S1 SWITCH S2
H ON OFF(*)
L OFF(*) ON
(*) High Impedance

Table 3: Absolute Maximum Ratings

Symbol Parameter Value Unit
V
V
V
V
I
IKC
I
I
OK
I
I
OP
or I
I
CC
P
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. (1) Derate above 70°C: by 18.5mW/°C.
Supply Voltage
CC
DC Input Voltage -0.5 to VCC+0.5
I
DC Control Input Voltage
IC
DC Output Voltage -0.5 to VCC+0.5
O
DC Input Diode Current on control pin (VIN<0V) DC InputDiode Current (VIN<0V)
IK
DC Output Diode Current DC Output Current
O
DC Output Current Peak (pulse at 1ms, 10% duty cycle) DC VCCor Ground Current
GND
Power Dissipation at Ta=70°C (1)
D
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to 4.6 V V
-0.5 to 4.6 V V
50 mA ± 50 mA
± 20 mA ± 300 mA ± 500 mA ± 100 mA
1120 mW
-65 to 150 °C 300 °C

Table 4: Recommended Operating Conditions

Symbol Parameter Value Unit
V
V
V
V
T
dt/dv
1) Truth Table guaranteed: 1.2V to 4.3V.
Supply Voltage (note 1)
CC
Input Voltage 0 to V
I
Control Input Voltage
IC
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time Control Input V
= 1.65V to 2.7V
CC
V
= 3.0V to 4.3V
CC
1.65 to 4.3 V
CC
0to4.3 V
CC
-55 to 125 °C 0to20 0to10
2/11
V
V
ns/V
Page 3

Table 5: DC Specifications

Test Conditions Value
Symbol Parameter
V
High Level
IH
Input Voltage
V
Low Level
IL
Input Voltage
R
ON-S1
Switch ON-S1 Resistance (1)
R
ON-S2
Switch ON-S2 Resistance (1)
R
ON
ON Resist. Match between channels (1, 2)
FLAT
ON Resistance
R
FLATNESS (3)
OFF State
I
OFF
Leakage Current (nSn), (Dn)
Input Leak.
I
IN
Current
I
Quiescent
CC
Supply Current (1)
V
CC
(V)
1.65-1.95 0.65V
2.3-2.5
2.7-3.0
3.3 1.5
3.6
4.3
1.65-1.95 0.40 0.40 0.40
2.3-2.5
2.7-3.6
3.3 0.50 0.50 0.50
3.6
4.3 1.3 1.3 1.3
4.3
3.0 0.80 0.80
2.7 0.80 0.80
2.3 2 2
1.8 4.0 5.0
1.65 4.0 5.0
4.3
3.0 0.40 0.50 0.60
2.7 0.40 0.50 0.60
2.3 0.50 0.80 0.80
1.8 0.70 3.0 4.0
1.65 0.80 3.0 4.0
2.7
4.3
3.0
2.7 0.07 0.15 0.15
2.3
1.65 V
4.3
0-4.3 VIN=0to3.6V ±0.1 ± 1 µA
1.65-4.3 VIN=VCCor
STG3680
=25°C
T
A
Min. Typ. Max. Min. Max. Min. Max.
CC
1.4 1.4 1.4
1.4 1.4 1.4
1.7 1.7 1.7
2.2 2.2 2.2
0.50 0.50 0.50
0.50 0.50 0.50
0.50 0.50 0.50
0.80 0.80
=0V to V
V
S
CC
IS=100mA
0.40 0.50 0.60
=0V to V
V
S
CC
IS=100mA
=1.5V
V
S
I
=100mA
S
=1.5V
V
S
I
=100mA
S
=0.8V
S
I
=100mA
S
0.06
VS=0.3or 4V ±10 ± 100 nA
±0.05 ±0.2 ±1 µA
GND
-40 to 85°C -55 to 125°C
0.65V
CC
0.65V
CC
1.5 1.5
Unit
V
V
Note 1:Guaranteedbydesign Note 2:∆R Note 3: Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal ranges.
ON=RON(MAX)-RON(MIN)
.
3/11
Page 4
STG3680
Table 6: AC Electrical Characteristics (CL=35pF,RL=50Ω, tr=tf≤ 5ns)
Test Condition Value
= 25°C
Symbol Parameter
t
PLH,tPHL
t
t
Propagation Delay 1.65-1.95
TURN-ON time 1.65-1.95 VS=0.8V
ON
TURN-OFF time 1.65-1.95 VS=0.8V
OFF
Break Before Make Time Delay
t
D
Q Charge injection 1.65-1.95
T
V
CC
(V)
2.3-2.7 0.40
3.0-3.6 0.30
=OPEN
V
I
A
Min. Typ. Max. Min. Max. Min. Max.
3.6-4.3 0.30
2.3-2.7 V
3.0-3.6 V
3.6-4.3 V
2.3-2.7 V
3.0-3.6 V
3.6-4.3 V
1.65-1.95
2.3-2.7 2 15
3.0-3.6 2 15
3.6-4.3 2 15
2.3-2.7 200
3.0-3.6 200
3.6-4.3 200
S S S
S S S
C
=35pF
L
R
L
V
S
C
= 100pF
L
R
=1M
L
V
GEN
R
GEN
=1.5V =1.5V =1.5V
=1.5V =1.5V =1.5V
=50
=1.5V
=0V =0
0.45
70 30 50 60 30 50 60 30 50 60 45 25 30 40 25 30 40 25 30 40
-40 to 85°C -55 to 125°C
Unit
ns
ns
ns
ns
pC
Table 7: An alog Switch Characteristics (C
= 5pF, RL=50Ω,TA= 25°C)
L
Test Condition Value
Symbol Parameter
OIRR Off Isolation (1) 1.65-4.3 V
V
(V)
CC
=1V
S
Min. Typ. Max. Min. Max. Min. Max.
RMS
f= 100KHz
Xtalk Crosstalk 1.65-4.3 V
=1V
S
RMS
f= 100KHz
THD Total Harmonic
Distortion
2.3-4.3 R
L
V
IN
=600
=2V
PP
f= 20Hz to 20kHz
BW -3dB Bandwidth 1.65-4.3 R
IN
Sn
C
D
Control Pin Input Capacitance
Sn Port Capaci­tance
D Port Capaci­tance when
3.3
3.3
C
C
=50
L
f= 1MHz 37
f= 1MHz 84
Switch is Enabled
Note 1: Off Isolation= 20Log10(VD/VS), VD= output. VS= input at off switch
= 25°C
T
A
-40 to 85°C -55 to 125°C
-64 dB
-54 dB
0.03 %
50 MHz
5
Unit
pF
4/11
Page 5
STG3680

Figure 2: ON Resi stance

Figure 3: OFF Leakage

Figure5: Bandwidth

Figure 6: Channel To Channel Crosstalk

Figure4: OFF Isolation

5/11
Page 6
STG3680

Figure7: Test Circuit

CL= 5/35pF or equivalent (includes jig and probe capacitance) RL=50Ω or equivalent R
T=ZOUT

Figure8: Break Before Make Time Delay

of pulse generator (typically 50Ω)
Figure 9: Charge Injection (V
6/11
GEN
=0V, R
=0,RL=1M,CL=100pF)
GEN
Page 7

Table 8: Turn ON, Turn OFF Delay Time

STG3680
7/11
Page 8
STG3680
QFN16 (3x3) MECHANICAL DATA
mm. inch
DIM.
MIN. TYP MAX. MIN. TYP. MAX.
A 0.80 0.90 1.00 0.032 0.035 0.039 A1 0.02 0.05 0.001 0.002 A3 0.20 0.008
b 0.18 0.25 0.30 0.007 0.010 0.012
D 3.00 0.118 D2 1.55 1.70 1.80 0.061 0.067 0.071
E 3.00 0.118 E2 1.55 1.70 1.80 0.061 0.067 0.071
e 0.50 0.020
K 0.20 0.008
L 0.30 0.40 0.50 0.012 0.016 0.020
r 0.09 0.006
E
A
E2
K
A1
e
D
b
D2
K
8/11
A3
L
r
Page 9
STG3680
Tape & Reel QFNxx/DFNxx (3x3) MECHANICAL DATA
mm. inch
DIM.
A 330 12.992
C 12.8 13.2 0.504 0.519
D20.2 0.795
N60 2.362
T 18.4 0.724 Ao 3.3 0.130 Bo 3.3 0.130 Ko 1.1 0.043 Po 4 0.157
P 8 0.315
MIN. TYP MAX. MIN. TYP. MAX.
9/11
Page 10
STG3680

Table 9: Revision History

Date Revision Description of Changes
17-May-2004 3
Characteristics at V
= 4.3 V Added on Tables 3, 4, 5, 6 and 7.
CC
10/11
Page 11
STG3680
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such inform ation nor fo r an y infring ement of p atents or o ther rights of third p arties which may r esult f rom its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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