Datasheet STFW4N150, STP4N150, STW4N150 Specification

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Page 1

N-channel 1500 V, 5 Ω, 4 A, PowerMESH™ Power MOSFET

Features

Type V

DSS RDS(on)

STFW4N150 1500 V < 7 Ω 4 A 63 W

STP4N150 1500 V < 7 Ω 4 A 160 W

STW4N150 1500 V < 7 Ω 4 A 160 W

■ 100% avalanche tested

■ Intrinsic capacitances and Qg minimized

■ High speed switching

■ Fully isolated TO-3PF plastic packages

■ Creepage distance path is 5.4 mm (typ.) for

TO-3PF

max I

STFW4N150

STP4N150, STW4N150

in TO-220, TO-247, TO-3PF

TO-220

TO-247

TO-3PF

Application

■ Switching applications

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest R charge and switching characteristics.

Table 1. Device summary

Order codes Marking Package Packaging

STFW4N150 4N150 TO-3PF Tube

STP4N150 P4N150 TO-220 Tube

STW4N150 W4N150 TO-247 Tube

per area, unrivalled gate

DS(on)

Figure 1. Internal schematic diagram.

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July 2009 Doc ID 11262 Rev 9 1/15

www.st.com

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Contents STFW4N150, STP4N150, STW4N150

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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STFW4N150, STP4N150, STW4N150 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value

Symbol Parameter

TO-220 TO-247 TO-3PF

Unit

TOT

Drain-source voltage (VGS = 0) 1500 V

Gate- source voltage ± 30 V

Drain current (continuous) at

TC = 25 °C

Drain current (continuous) at

TC = 100 °C

(1)

Drain current (pulsed) 12 12 12

Total dissipation at TC = 25 °C 160 63 W

Insulation withstand voltage (RMS)

ISO

from all three leads to external heat sink (t=1 s;TC=25 °C)

1. Pulse width limited by safe operating area

Storage temperature -55 to 150 °C

stg

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter

thj-case

thj-amb

Thermal resistance junction-case max

Thermal resistance junctionambient max

444

2.5 2.5 2.5

(1)

3500 V

Value

TO-220 TO-247 TO-3PF

0.78 2 °C/W

62.5 50 °C/W

Unit

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive (pulse width limited by T

max)

Single pulse avalanche energy

(starting T

= 25 °C, ID = IAR, VDD = 50 V)

Doc ID 11262 Rev 9 3/15

350 mJ

Page 4

Electrical characteristics STFW4N150, STP4N150, STW4N150

2 Electrical characteristics

= 25 °C unless otherwise specified)

CASE

Table 5. On/off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

(BR)DSS

DSS

GSS

GS(th)

DS(on

Drain-source Breakdown voltage

Zero gate voltage Drain current (VGS = 0)

Gate-body leakage current (VDS = 0)

ID = 1 mA, VGS = 0 1500 V

= Max rating

= Max rating, TC = 125 °C

500µAµA

VGS = ± 30 V ± 100 nA

Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

Static drain-source on resistance

= 10 V, ID = 2 A 5 7 Ω

Table 6. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

(1)

C C C

d(on)

d(off)

1. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance VDS = 30 V, ID = 2 A - 3.5 S

Input capacitance

iss

Output capacitance

oss

Reverse transfer

rss

capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

= 25 V, f = 1 MHz,

= 0

= 750 V, ID = 2 A,

= 4.7 Ω, V

Figure 19

= 600 V, ID = 4 A,

= 10 V

Figure 20

= 10 V

1300

120

35 30 45 45

30 10

50 nC

pF pF pF

ns ns ns ns

nC nC

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STFW4N150, STP4N150, STW4N150 Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

SDM

RRM

Source-drain current

(1)

Source-drain current (pulsed)

(2)

Forward on voltage ISD = 4 A, VGS = 0 - 2 V

Reverse recovery time

Reverse recovery charge

Reverse recovery current

Reverse recovery time

Reverse recovery charge

Reverse recovery current

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

= 4 A,

di/dt = 100 A/µs

= 45 V

Figure 21

ISD = 4 A, di/dt = 100 A/µs

= 45 V, Tj = 150°C

Figure 21

510

615

12.6

A A

µC

Doc ID 11262 Rev 9 5/15

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Electrical characteristics STFW4N150, STP4N150, STW4N150

TO3PF

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220

Figure 4. Safe operating area for TO-3PF Figure 5. Thermal impedance for TO-3PF

(A)

AM03935v1

δ=0.5

0.2

0.1

DS(on)

100µs

1ms

10µs

0.1

Operation in this area is

Limited by max R

Tj=150°C Tc=25°C

10ms

Sinlge

0.01

Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247

0.1

pulse

100

1000

DS(V)

-1

-2

0.01

Single pulse

0.02

0.05

-2

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STFW4N150, STP4N150, STW4N150 Electrical characteristics

Figure 8. Output characteristics Figure 9. Transfer characteristics

Figure 10. Transconductance Figure 11. Static drain-source on resistance

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations

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Electrical characteristics STFW4N150, STP4N150, STW4N150

Figure 14. Normalized gate threshold voltage

vs temperature

Figure 16. Source-drain diode forward

characteristics

Figure 15. Normalized on resistance vs

temperature

Figure 17. Normalized B

vs temperature

VDSS

Figure 18. Maximum avalanche energy vs

8/15 Doc ID 11262 Rev 9

temperature

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STFW4N150, STP4N150, STW4N150 Test circuits

3 Test circuits

Figure 19. Switching times test circuit for

resistive load

VGS

D.U.T.

2200

µF

3.3

µF

AM01468v1

Figure 21. Test circuit for inductive load

Ω

switching and diode recovery times

D.U. T.

FAST DIODE

L=100µH

3.3

µF

1000

µF

Figure 20. Gate charge test circuit

i=20V=VGMAX

2200 µF

1kΩ

12V

IG=CONST

2.7kΩ

47kΩ

100Ω

100nF

D.U.T.

AM01469v1

Figure 22. Unclamped inductive load test

circuit

D.U. T.

2200

µF

3.3

µF

1kΩ

VDD

AM01470v1

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

V(BR)DSS

IDM

VDD

AM01472v1

10%

tdon

ton

90%

10%

Doc ID 11262 Rev 9 9/15

VDS

90%

tdoff

AM01471v1

toff

90%

10%

AM01473v1

Page 10

Package mechanical data STFW4N150, STP4N150, STW4N150

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK

packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.

10/15 Doc ID 11262 Rev 9

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STFW4N150, STP4N150, STW4N150 Package mechanical data

TO-220 mechanical data

Dim

Min Typ Max Min Typ Max

mm inch

A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034

b1 1.14 1.70 0.044 0.066

c0.48 0.70 0.019 0.027 D 15.25 15.75 0.6 0.62

D1 1.27 0.050

E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F1.23 1.32 0.048 0.051

H1 6.20 6.60 0.244 0.256

J1 2.40 2.72 0.094 0.107

L13 14 0.511 0.551

L1 3.50 3.93 0.137 0.154 L20 16.40 0.645 L3028.90 1.137

∅P 3.75 3.85 0.147 0.151

Q2.65 2.95 0.104 0.116

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Package mechanical data STFW4N150, STP4N150, STW4N150

TO-247 Mechanical data

Dim.

Min. Typ Max.

A4.855.15

A1 2.20 2.60

b 1.0 1.40

b1 2.0 2.40

b2 3.0 3.40

c0.40 0.80

D19.85 20.15

E 15.45 15.75

e5.45

L 14.20 14.80

L1 3.70 4.30

L2 18.50

øP 3.55 3.65

øR 4.50 5.50

S 5.50

mm.

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STFW4N150, STP4N150, STW4N150 Package mechanical data

TO-3PF mechanical data

DIM.

min. typ max.

mm.

A5.30 5.70 C2.80 3.20 D 3.10 3.50

D1 1.80 2.20

E0.80 1.10 F 0.65 0.95

F2 1.80 2.20

G 10.30 11.50

G1 5.45

H 15.30 15.70

L9.80 10 10.20 L2 22.8023.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15

N1.80 2.20

R 3.80 4.20

Dia3.40 3.80

7627132_C

Doc ID 11262 Rev 9 13/15

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Revision history STFW4N150, STP4N150, STW4N150

5 Revision history

Table 8. Document revision history

Date Revision Changes

29-Mar-2005 1 Initial release

07-Jul-2005 2 Removed TO-220FP

07-Oct-2005 3 Document status promoted from preliminary data to datasheet

10-Aug-2006 4 Document reformatted, no content change

06-Nov-2007 5 Updated unit on Table 5: On/off states

09-Apr-2008 6 Added new packages: TO-220FH, TO-3PF

21-Jan-2009 7 Remove package TO-220FH

23-Feb-2009 8

23-Jul-2009 9

Added P

value for TO-3PF P

TOT

(Table 2: Absolute

TOT

maximum ratings)

Added new figures: Figure 4: Safe operating area for TO-3PF and Figure 5: Thermal impedance for TO-3PF

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STFW4N150, STP4N150, STW4N150

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Doc ID 11262 Rev 9 15/15

Datasheet STFW4N150, STP4N150, STW4N150 Specification

Specifications and Main Features

Frequently Asked Questions

User Manual

Table 1. Device summary

Figure 1. Internal schematic diagram.

1 Electrical ratings

Table 2. Absolute maximum ratings

Table 3. Thermal data

Table 4. Avalanche characteristics

2 Electrical characteristics

Table 5. On/off states

Table 6. Dynamic

Table 7. Source drain diode

2.1 Electrical characteristics (curves)

Figure 10. Transconductance Figure 11. Static drain-source on resistance

3 Test circuits

Figure 20. Gate charge test circuit

Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform

4 Package mechanical data

5 Revision history

Table 8. Document revision history