N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH™ Power MOSFETs
in TO-3PF, H
2
PAK-2, TO-220 and TO247 packages
Datasheet - production data
Features
Figure 1. Internal schematic diagram
Order codesV
STFW3N150
DS
R
DS(on)
max.IDP
TOT
63 W
STH3N150-2
1500 V9 Ω2.5 A
140 WSTP3N150
STW3N150
• 100% avalanche tested
• Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package,
creepage distance path is 5.4 mm (typ.)
Applications
• Switching applications
Description
These Power MOSFETs are designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. The result is a product that
matches or improves on the performance of
comparable standard parts from other
manufacturers.
Order codesMarkingPackagesPackaging
STFW3N150
STH3N150-2H2PAK-2Tape and reel
STP3N150TO-220
STW3N150TO-247
February 2014DocID13102 Rev 111/23
This is information on a product in full production.
– Updated: Figure 27 and Table 11
– Updated: Section 4: Package mechanical data
– Minor text changes
22/23DocID13102 Rev 11
Page 23
STFW3N150, STH3N150-2, STP3N150, STW3N150
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