Datasheet STP9NK60ZD, STF9NK60ZD, STB9NK60ZD Datasheet (ST)

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N-CHANNEL 600V - 0.85Ω - 7A TO-220/TO-220FP/D2PAK

STP9NK60ZD - STF9NK60ZD

STB9NK60ZD

SuperFREDMesh™ M OSF ET

ADVANCED DATA

TYPE V

STP9NK60ZD
STF9NK60ZD
STB9NK60ZD

■ TYPICAL R

■ VERY HIGH dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ GATE CHARGE MINIMIZED

■ LOW INTRINSICCAPACITANCES

■ FAST INTERNAL RECOVERY DIODE

600 V
600 V
600 V

(on) = 0.85 Ω

DS

DSS

R

DS(on)

<0.95Ω
<0.95Ω
<0.95Ω

I

D

7A
7A
7A

Pw

125 W

30 W

125 W

DESCRIPTION

The SuperFRED Mesh™ se ries associates all ad­vantages of reduced on-resistance, zener gate pro­tection and very high d v/dt capability with a Fast
body-drain reco ve ry diode. Such series com ple­ments the “FDmesh™” Advanced Technology.

APPLICATIONS

■ HID BALLAST

■ ZVS PHASE-SHIFT FULL BRIDGE

CONVERTERS

TO-220 TO-220FP

3

1

D2PAK

INTERNAL SCHEMATIC DIAGRAM

3

2

1

ORDERING INFORMATION

SALES TYPE MARKING PACKAGE PACKAGING

STP9NK60ZD P9NK60ZD TO-220 TUBE
STF9NK60ZD F9NK60ZD TO-220FP TUBE

STB9NK60ZDT4 B9NK60ZD

January 2004

2

PAK

D

TAPE & REEL

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

TO-220 / D

Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)600V
Gate- source Voltage ± 30 V
Drain Current (continuos) at TC=25°C77(*)A
Drain Current (continuos) at TC=100°C4.34.3(*)A

()

Drain Current (pulsed) 28 28 (*) A
Total Dissipation at TC=25°C

I

V

DM

P

V

DGR

V

I
I

TOT

DS

GS

D
D

Derating Factor 1 0.24 W/°C

V

ESD(G-S)

Gate source ESD (HBM-C=100pF, R=1.5KΩ)

dv/dt (1) Peak Diode Recovery voltage slope 15 V/ns

V

ISO

T

j

T

stg

() Pulse width limited by safe operating area

≤7A, di/dt ≤500A/µs, VDD≤ V

(1) I

SD

(*) Limited only by maximum temperature allowed

Insulation Withstand Voltage (DC)
Operating Junction Temperature

Storage Temperature

(BR)DSS,Tj

=25°C

2

PAK TO-220FP

600 V

125 30 W

4000 V

- 2500 V

-55 to 150 °C

THERMAL DATA

TO-220

2

D

PAK

Rthj-pcb Thermal Resistance Junction-pcb Max

(Whenmounted on minimum Footprint)

30 °C/W

Rthj-case Thermal Resistance Junction-case Max 1 4.16 °C/W

Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W

T

l

Maximum Lead Temperature For Soldering

300 °C

Purpose

TO-220FP Unit

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

I

AR

E

AS

Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T

max)

j

Single Pulse Avalanche Energy
(starting T

=25°C, ID=IAR,VDD=50V)

j

7A

235 mJ

GATE-SOURCE ZENER DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BV

GSO

Gate-Source Breakdown

Igs=± 1mA (Open Drain) 30 V

Voltage

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have spec ifically been designed to enhance not only the device’s
ESD capability, but also to make them s afely absorb possibl e voltage transients that may occasionally be
applied from gate tosouce. In this respect the Zener voltageis appropriate to achieve an efficient andcost­effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

ELECTRICAL CHARACTERISTICS (T

=25°C UNLESS OTHERWISE SPECIFIED)

CASE

ON/OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=1mA,VGS=0 600 V

Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

R

DS(on)

Zero Gate Voltage
Drain Current (V

GS

=0)

Gate-body Leakage
Current (V

DS

=0)
Gate Threshold Voltage
Static Drain-source On

V

=MaxRating

DS

= Max Rating, TC=125°C

V

DS

V

= ± 20V ±10 µA

GS

V

DS=VGS,ID

= 100µA

2.5 3.5 4.5 V

1

50

VGS= 10V, ID= 3.5 A 0.85 0.95 Ω

Resistance

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(1) Forward Transconductance VDS=15V,ID=3.5A 5.3 S

fs

C

oss eq.

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

(3)

Equivalent Output Capacitance

VDS=25V,f=1MHz,VGS=0 1110

135

30

VGS=0V,VDS= 0V to 480V 72 pF

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

Q
Q
Q

t

r

g
gs
gd

Turn-on Delay Time
Rise Time

Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

VDD= 300 V, ID=3.5A
RG=4.7Ω VGS=10V
(Resistive Load see, Figure 3)

= 480V, ID=7A,

V

DD

V

= 10V

GS

22
17

41

8.7
21

53

µA
µA

pF
pF
pF

ns
ns

nC
nC
nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(off)

Turn-off Delay Time

t

f

FallTime

VDD= 300 V, ID=3.5A
R

=4.7Ω VGS=10V

G

42
15

(Resistive Load see, Figure 3)

t

r(Voff)

t
t

Off-voltage Rise Time

f

c

FallTime
Cross-over Time

= 480V, ID=7A,

V

DD

R

=4.7Ω, VGS= 10V

G

(Inductive Load see, Figure 5)

11

8

20

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

t

rr

Q

rr

I

RRM

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe o perating area.

3. C

Source-drain Current

(2)

Source-drain Current (pulsed)

(1)

ForwardOnVoltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current

is defined as a constant equivalent capacitance giving the same charging time as C

oss eq.

.

V

DSS

ISD=7A,VGS=0

= 7 A, di/dt = 100A/µs

I

SD

V

= 30V, Tj=25°C

DD

(see test circuit, Figure 5)

= 7 A, di/dt = 100A/µs

I

SD

VDD= 30V, Tj=150°C
(see test circuit, Figure 5)

150
663

8.5

194
935

9.6

when VDSincreases from 0 to 80%

oss

7

28

1.6 V

ns
ns

ns
ns
ns

A
A

ns

nC

A

ns

nC

A

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D²PAK

Thermal Impedance For TO-220/D²P A K Thermal Impedance Fo r TO-220FP

Output Characteristics

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Transfer Characteristics

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

Static Drain-source On ResistanceTransconductance

Capacitance VariationsGate Charge vs Gate-source Voltage

Normalized Gate Threshold Voltage vs Temp.

Normalized On Resistance vs Temperature

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

Maximum Avalanche Energy vs Temperature

Normalized BVDSS vs TemperatureSource-drain Diode Forward Characteristics

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

Fig. 2: Unclamped Inductive Wav efo rmFig. 1: Unclamped Inductive Load Test Circuit

Fig. 3: Switching Times Test Circuit For

Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

TO-220 MECHANICAL DATA

DIM.

A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034

b1 1.15 1.70 0.045 0.066

c 0.49 0.70 0.019 0.027
D 15.25 15.75 0.60 0.620
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106

e1 4.95 5.15 0.194 0.202

F 1.23 1.32 0.048 0.052
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107

L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154

L20 16.40 0.645
L30 28.90 1.137

øP 3.75 3.85 0.147 0.151

Q 2.65 2.95 0.104 0.116

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

TO-220FP MECHANICAL DATA

DIM.

A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.7 0.017 0.027

F 0.75 1 0.030 0.039
F1 1.15 1.5 0.045 0.067
F2 1.15 1.5 0.045 0.067

G 4.95 5.2 0.195 0.204

G1 2.4 2.7 0.094 0.106

H 10 10.4 0.393 0.409

L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 .0385 0.417
L5 2.9 3.6 0.114 0.141
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366

Ø 3 3.2 0.118 0.126

MIN. TYP MAX. MIN. TYP. MAX.

mm. inch

E

A

D

B

L3

L6

L7

F1

F

G1

H

G

F2

123

L2

L5

L4

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

D2PAK MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 4.4 4.6 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009

B 0.7 0.93 0.027 0.036
B2 1.14 1.7 0.044 0.067

C 0.45 0.6 0.017 0.023

C2 1.23 1.36 0.048 0.053

D 8.95 9.35 0.352 0.368

D1 8 0.315

E 10 10.4 0.393
E1 8.5 0.334

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.625
L2 1.27 1.4 0.050 0.055
L3 1.4 1.75 0.055 0.068

mm. inch

M 2.4 3.2 0.094 0.126

R 0.4 0.015
V2 0º 8º

3

10/12

1

STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

D2PAK FOOTPRINT

TAPE AND REEL SHIPMENT (suffix ”T4”)*

TUBE SHIPMENT (no suffix)*

REEL MECHANICAL DATA

DIM.

A 330 12.992
B 1.5 0.059
C 12.8 13.2 0.504 0.520
D 20.2 0795
G 24.4 26.4 0.960 1.039
N 100 3.937
T 30.4 1.197

mm inch

MIN. MAX. MIN. MAX.

TAPE MECHANICAL DATA

DIM.

A0 10.5 10.7 0.413 0.421
B0 15.7 15.9 0.618 0.626

D 1.5 1.6 0.059 0.063

D1 1.59 1.61 0.062 0.063

E 1.65 1. 85 0.065 0.073

F 11.4 11.6 0.449 0. 456
K0 4.8 5.0 0.189 0.197
P0 3.9 4.1 0.153 0.161
P1 11.9 12.1 0.468 0.476
P2 1.9 2.1 0.075 0.082

R 50 1.574

T 0.25 0.35 0.0098 0.0137

W 23.7 24.3 0.933 0.956

* on sales type

mm inch

MIN. MAX. MIN. MAX.

BASE QTY BULK QTY

1000 1000

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STP9NK60ZD - STF9NK60ZD - STB9NK60ZD

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