Page 1
STF92
SMALL SIGNAL PNP TRANSISTOR
PRELIMINARY DATA
■ SILICON EPI TAX IA L PLANAR PN P HIGH
VOLTAGE TRANSISTOR
■ MINIATURE SOT-89 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
■ TAPE AND REEL PACKING
■ THE NPN COM PLE M ENT A RY TY P E IS
STF42
APPLICATIONS
■ VIDEO AMPLIFIER CIRC UITS (RGB
CATHODE CURRENT CONTROL)
■ TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
INTER NAL SCH E M ATI C DIAG RA M
May 2002
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (IE = 0) -300 V
V
CEO
Collector-Emitter Voltage (IB = 0) -300 V
V
EBO
Emitter-Base Voltage (IC = 0) -5 V
I
C
Collector Current -0.1 A
I
CM
Collector Peak Current -0.2 A
P
tot
Total Dissipation at TC = 25 oC 1.3 W
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
Type Marking
STF92 692
®
SOT-89
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THERMAL DATA
R
thj-amb
• Thermal Resistance Junction-Ambient Max 96.1
o
C/W
• Device mounted on a PCB area of 1 cm
2
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= -200 V
V
CB
= -200 V TC = 150 oC
V
CB
= -300 V
-10
-10
-100
nA
µA
µA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= -5 V -50 nA
V
(BR)CBO
Collector-Base
Breakdown Voltage
(I
E
= 0)
I
C
= -100 µA
-300 V
V
(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(I
B
= 0)
I
C
= -10 mA -300 V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= -100 µA
-5 V
V
CE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -30 mA IB = - 5 mA -0.6 V
V
BE(sat)
∗ Base-Emitter
Saturation Voltage
IC = -30 mA IB = - 5 mA -1.2 V
h
FE
∗ DC Current Gain IC = -30 mA VCE = -10 V 75
f
T
Transition Frequency IC = -15mA VCE = -10V f = 20 MHz 60 MHz
C
CBO
Collector-Base
Capacitance
IE = 0 VCB = -10 V f = 1 MHz 6 pF
C
EBO
Emitter-Base
Capacitance
IC = 0 VEB = -2 V f = 1 MHz 22 pF
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
STF92
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DIM.
mm mils
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.4 1.6 55.1 63.0
B 0.44 0.56 17.3 22.0
B1 0.36 0.48 14.2 18.9
C 0.35 0.44 13.8 17.3
C1 0.35 0.44 13.8 17.3
D 4.4 4.6 173.2 181.1
D1 1.62 1.83 63.8 72.0
E 2.29 2.6 90.2 102.4
e 1.42 1.57 55.9 61.8
e1 2.92 3.07 115.0 120.9
H 3.94 4.25 155.1 167.3
L 0.89 1.2 35.0 47.2
P025H
SOT-89 MECHANICAL DATA
STF92
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2002 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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STF92
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