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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0670
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical V
• 3 dB Bandwidth:
DC to 1.0 GHz
d
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
• High Gain:
19.5␣ dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Hermetic Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-0670 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
70 mil Package
,
MAX
V
> 5 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 3.5 V
d
C
block
5965-9586E
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MSA-0670 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 50 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.7 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
200 mW
> 174° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 130°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 16 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 19.0 20.5 22.0
Gain Flatness f = 0.1 to 0.6 GHz dB ±0.7 ± 1.0
P
3 dB Bandwidth GHz 1.0
Input VSWR f = 0.1 to 1.5 GHz 1.9:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 1.5 GHz 1.8:1
NF 50 Ω Noise Figure f = 0.5 GHz dB 2.8 4.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0
Third Order Intercept Point f = 0.5 GHz dBm 14.5
Group Delay f = 0.5 GHz psec 200
Device Voltage V 3.1 3.5 3.9
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
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Page 3
MSA-0670 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
S
= 16 mA)
d
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .05 –147 20.5 10.62 172 –23.3 .068 4 .05 –69 1.05
0.2 .07 –134 20.4 10.41 164 –23.0 .070 8 .09 –92 1.04
0.3 .09 –126 20.1 10.16 156 –22.6 .074 12 .13 –104 1.02
0.4 .11 –123 19.9 9.85 148 –22.4 .076 14 .16 –113 1.00
0.5 .13 –123 19.6 9.50 141 –22.0 .079 26 .20 –121 0.99
0.6 .15 –123 19.2 9.09 135 –21.3 .082 18 .22 –128 0.97
0.8 .19 –126 17.4 8.28 122 –20.7 .093 22 .25 –141 0.94
1.0 .24 –129 16.5 7.46 110 –19.8 .103 22 .27 –154 0.92
1.5 .31 –141 15.2 5.76 87 –18.2 .124 23 .27 –176 0.91
2.0 .38 –157 13.0 4.47 68 –17.2 .138 19 .24 166 0.94
2.5 .42 –167 11.1 3.59 57 –16.7 .146 20 .21 158 1.01
3.0 .46 178 9.5 2.97 45 –16.4 .152 16 .17 156 1.07
3.5 .48 173 7.9 2.49 33 –16.2 .155 11 .14 163 1.15
4.0 .48 164 6.6 2.13 22 –16.1 .156 9 .11 –175 1.27
4.5 .48 155 5.5 1.87 13 –15.9 .161 5 .11 –154 1.35
5.0 .48 143 4.5 1.67 3 –15.8 .163 3 .14 –141 1.46
Note:
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
(unless otherwise noted)
21
Gain Flat to DC
18
15
12
(dB)
p
G
9
6
3
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 16 mA.
21
20
19
Gp (dB)
18
17
5
4
3
(dBm)
2
1 dB
P
1
0
–55 –25 +25 +85 +125
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.
G
P
NF
P
1 dB
= 25° C
A
5
4
3
2
NF (dB)
1
0
25
20
15
(mA)
d
I
10
TC = +125°C
TC = +25°C
TC = –55°C
5
0
102345
V
(V)
d
(dB)
p
G
25
20
15
10
5
0
10 20 25 3015
Id (mA)
Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.
12
Id = 30 mA
8
Id = 20 mA
(dBm)
4
1 dB
P
Id = 16 mA
0
Id = 12 mA
-4
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
4.0
3.5
3.0
NF (dB)
2.5
2.0
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Id= 12 mA
Id= 16 mA, 30 mA
Id= 20 mA
Figure 6. Noise Figure vs. Frequency.
Compression vs. Frequency.
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0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
Page 4
70 mil Package Dimensions
.040
1.02
42GROUND
RF OUTPUT
RF INPUT
AND BIAS
.020
.508
1
.004 ± .002
.10 ± .05
GROUND
.070
1.70
.495 ± .030
12.57 ± .76
3
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
in
mm
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