Page 1
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0770
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical V
• 3 dB Bandwidth:
DC to 2.5 GHz
d
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
• 13.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic, Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-0770 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
70 mil Package
,
MAX
V
> 5 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 4.0 V
d
C
block
5965-9592E
6-398
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MSA-0770 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 60 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.7 mW/° C for T
4. Ths small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
275 mW
> 164° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 130°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 22 mA, Z
G
P
∆G
P
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 12.5 13.5 14.5
Gain Flatness f = 0.1 to 1.5 GHz dB ±0.6 ± 1.0
3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 2.5 GHz 2.0:1
Output VSWR f = 0.1 to 2.5 GHz 1.6:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
NF 50 Ω Noise Figure f = 1.0 GHz dB 4.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 5.5
Third Order Intercept Point f = 1.0 GHz dBm 19.0
Group Delay f = 1.0 GHz psec 130
Device Voltage V 3.6 4.0 4.4
dV/dT Device Voltage Temperature Coefficient mV/°C –7.0
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
6-399
Page 3
MSA-0770 Typical Scattering Parameters (Z
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 22 mA.
102345
V
d
(V)
Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.
0
2
4
6
8
10
12
14
0
10
20
30
40
Gain Flat to DC
I
d
(mA)
TC = +125°C
TC = +25°C
TC = –55°C
Id (mA)
G
p
(dB)
4
6
8
10
12
16
14
10 20 30 40
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
3
4
5
6
12
13
14
–25–55 +25 +85 +125
4
5
6
P
1 dB
(dBm)
NF (dB)
NF
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
Id=22mA.
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
–3
0
3
6
9
12
15
P
1 dB
(dBm)
Id = 40 mA
Id = 15 mA
Id = 22 mA
4.5
4.0
5.0
5.5
6.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0
P
1 dB
G
P
Id = 15 mA
Id = 22 mA
Id = 40 mA
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 22 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .04 –7 13.5 4.74 175 –18.6 .118 2 .20 –10
0.2 .05 –11 13.5 4.72 170 –18.4 .120 2 .19 –18
0.4 .06 –24 13.4 4.70 160 –18.4 .121 6 .20 –34
0.6 .08 –38 13.4 4.65 151 –18.1 .124 7 .21 –50
0.8 .10 –48 13.2 4.58 141 –17.8 .133 9 .23 –76
1.0 .12 –58 13.0 4.47 131 –17.5 .133 9 .23 –76
1.5 .20 –82 12.3 4.12 107 –16.6 .148 10 .23 –101
2.0 .30 –107 11.6 3.82 85 –15.7 .163 8 .22 –116
2.5 .37 –123 10.4 3.33 70 –15.3 .171 7 .19 –116
3.0 .42 –140 9.0 2.83 52 –15.4 .170 3 .20 –111
3.5 .46 –154 7.7 2.42 37 –15.4 .170 1 .23 –107
4.0 .47 –167 6.4 2.08 23 –15.5 .169 –4 .29 –107
5.0 .47 163 4.2 1.63 –1 –15.5 .167 –9 .35 –116
6.0 .51 131 2.3 1.30 –23 –15.9 .160 –11 .38 –133
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
= 25° C
A
6-400
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70 mil Package Dimensions
.040
1.02
42GROUND
RF OUTPUT
RF INPUT
AND BIAS
.020
.508
1
.004 ± .002
.10 ± .05
.070
1.70
.495 ± .030
12.57 ± .76
GROUND
3
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
in
mm
6-401
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