
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0385
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
1 dB
at
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0385 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
85 Plastic Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
C
block
= 5 V
V
d
5965-9570E
6-310

MSA-0385 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 70 mA
Power Dissipation
[2,3]
400 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 9.5 mW/° C for T
4. See MEASUREMENTS section “Thermal Resistance” for more information.
CASE
= 25°C.
> 108° C.
C
[1]
Thermal Resistance
θjc = 105°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 35 mA, Z
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 12.5
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
f = 1.0 GHz 10.0 12.0
∆G
P
f
3 dB
VSWR
Gain Flatness f = 0.1 to 1.6 GHz dB ±0.7
3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 3.0 GHz 1.5:1
Output VSWR f = 0.1 to 3.0 GHz 1.7:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0
Third Order Intercept Point f = 1.0 GHz dBm 23.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.0 5.0 6.0
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
6-311

MSA-0385 Typical Scattering Parameters (Z
G
p
(dB)
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 35 mA.
0
2
4
6
8
10
12
14
Gain Flat to DC
Vd (V)
Figure 2. Device Current vs. Voltage.
0
10
20
30
60
I
d
(mA)
0 234561
40
50
TC = +85°C
T
C
= +25°C
T
C
= –25°C
Id (mA)
Figure 3. Power Gain vs. Current.
4
6
8
10
12
14
G
p
(dB)
15 25 30 40 503520
5
6
7
11
12
13
–25 0 +25 +55 +85
8
9
10
P
1 dB
(dBm)
NF (dB)
G
P
NF
G
p
(dB)
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
=35mA.
P
1 dB
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
0
3
6
9
12
15
18
P
1 dB
(dBm)
Id = 50 mA
Id = 20 mA
Id = 35 mA
5.5
5.0
6.0
6.5
7.0
NF (dB)
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
0.1 0.2 0.3 0.5 2.01.0
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
Id = 20 mA
I
d
= 35 mA
I
d
= 50 mA
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 35 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .09 178 12.6 4.26 175 –18.1 .124 2 .13 –10
0.2 .09 171 12.5 4.24 170 –18.4 .120 3 .13 –20
0.4 .08 166 12.4 4.17 161 –18.4 .121 6 .14 –41
0.6 .07 160 12.3 4.10 151 –18.0 .126 8 .15 –57
0.8 .07 155 12.1 4.01 142 –17.9 .127 12 .16 –71
1.0 .06 152 11.9 3.92 133 –17.6 .132 12 .18 –84
1.5 .05 –169 11.2 3.63 112 –16.5 .149 18 .21 –112
2.0 .08 –174 10.4 3.29 92 –15.6 .167 19 .23 –136
2.5 .12 –173 9.5 2.98 79 –14.6 .186 22 .25 –150
3.0 .20 178 8.4 2.64 63 –14.1 .198 20 .26 –166
3.5 .25 170 7.5 2.36 47 –13.5 .211 17 .25 –174
4.0 .28 160 6.5 2.12 33 –13.0 .207 13 .24 –180
5.0 .42 134 4.7 1.71 7 –12.2 .224 4 .20 168
6.0 .50 99 2.7 1.37 –18 –12.0 .252 –7 .23 133
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
= 25° C
A
6-312

85 Plastic Package Dimensions
.020
.51
A03
.085
2.15
5° TYP.
.286 ± .030
7.36 ± .76
4
0.143 ± 0.015
3.63 ± 0.38
3
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
1. Dimensions are
2
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.006 ± .002
.15 ± .05
45°
1
.060 ± .010
1.52 ± .25
.07
0.43
GROUND
RF INPUT
GROUND
in
mm
6-313