Page 1
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0800
Features
• Usable Gain to 6.0␣ GHz
• High Gain:
32.5 dB Typical at 0.1␣ GHz
23.5 dB Typical at 1.0␣ GHz
• Low Noise Figure:
3.0␣ dB Typical at 1.0␣ GHz
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
Description
The MSA-0800 is a high perfor-
current stability also allows bias
flexibility.
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is designed for use as a general purpose
50 Ω gain block above 0.5␣ GHz and
can be used as a high gain transistor below this frequency. Typical
The recommended assembly
procedure is gold-eutectic die
attach at 400° C and either wedge
or ball bonding using 0.7 mil gold
wire.
section, “Chip Use”.
applications include narrow and
broad band IF and RF amplifiers in
commercial, industrial and military
applications.
Typical Biasing Configuration
R
bias
[1]
See APPLICATIONS
V
>
10
V
CC
MAX
Chip Outline
[1]
,
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
RFC (Optional)
C
block
IN OUT
MSA
V
= 7.8 V
d
C
block
5965-9595E
6-410
Page 2
MSA-0800 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 80 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
Mounting Surface
3. Derate at 14.3 mW/° C for T
4. The small spot size of this technique results in a higher, though more
accurate determination of θ
[2,3]
(TMS) = 25° C.
Mounting␣ Surface
750 mW
> 148°C.
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 70°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 32.5
[1]
, T
A
= 25° C
[2]
: Id = 36 mA, ZO = 50 Ω Units Min. Typ. Max.
f = 1.0 GHz 23.5
f = 4.0 GHz 11.0
VSWR
Input VSWR f = 1.0 to 3.0 GHz 2.0:1
Output VSWR f = 1.0 to 3.0 GHz 1.9:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 3.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 27.0
Group Delay f = 1.0 GHz psec 125
Device Voltage V 7.0 7.8 8.4
dV/dT Device Voltage Temperature Coefficient mV/°C –17.0
Notes:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
2.
RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number Devices Per Tray
MSA-0800-GP4 100
6-411
Page 3
MSA-0800 Typical Scattering Parameters
Freq.
S
11
S
21
[1]
(Z
= 50 Ω, TA = 25° C, I
O
S
12
= 36 mA)
d
S
22
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k
0.1 .65 –17 32.6 42.50 163 –36.9 .014 39 .64 –20 0.80
0.2 .61 –31 31.7 38.59 148 –34.1 .020 47 .59 –39 0.68
0.4 .50 –54 29.6 30.22 126 –31.0 .028 52 .49 –68 0.63
0.6 .43 –70 27.5 23.64 113 –28.5 .038 52 .40 –90 0.69
0.8 .38 –81 25.6 19.05 103 –26.7 .046 53 .35 –106 0.75
1.0 .34 –95 24.2 16.27 93 –25.4 .054 55 .30 –120 0.80
1.5 .31 –110 20.9 11.12 78 –23.6 .066 53 .23 –142 0.88
2.0 .32 –124 18.3 8.22 66 –22.6 .075 53 .17 –158 0.98
2.5 .33 –129 16.3 6.52 61 –20.7 .092 57 .13 –162 1.00
3.0 .34 –138 14.4 5.24 54 –20.3 .097 54 .07 –165 1.11
3.5 .36 –146 12.8 4.36 45 –19.0 .112 50 .07 –140 1.11
4.0 .36 –155 11.3 3.68 37 –18.3 .122 49 .10 –96 1.16
5.0 .35 177 8.7 2.73 23 –17.2 .138 43 .15 –75 1.28
6.0 .43 150 6.3 2.07 10 –16.6 .148 35 .15 –81 1.40
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
Typical Performance, T
(unless otherwise noted)
35
30
Gain Flat to DC
25
20
(dB)
p
G
15
10
5
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, Id = 36 mA.
16
Id = 40 mA
14
Id = 36 mA
12
(dBm)
10
1 dB
P
8
6
Id = 20 mA
= 25° C
A
(dB)
p
G
35
30
25
20
15
10
5
10 30 4020
I
(mA)
d
0.1 GHz
0.5 GHz
1.0 GHz
2.0 GHz
4.0 GHz
Figure 2. Power Gain vs. Current.
4.5
Id = 20 mA
= 36 mA
I
d
= 40 mA
I
d
4.0
3.5
NF (dB)
3.0
24
23
22
Gp (dB)
21
4
3
NF (dB)
2
–55 –25 +25 +85 +125
TEMPERATURE (°C)
G
P
P
1 dB
NF
Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Mounting Surface Temperature,
f = 1.0 GHz, I
= 36 mA.
d
13
12
(dBm)
11
1 dB
P
10
4
0.1 0.2 0.3 0.5 2.01.0 4.0 0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
2.5
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency.
Compression vs. Frequency.
6-412
Page 4
MSA-0800 Chip Dimensions
GROUND
INPUT
394 µm
15.5 mil
Unless otherwise specified, tolerances are
±13 µm/±0.5 mils. Chip thickness is 114 µm/4.5 mil.
Bond Pads are 41 µm/1.6 mil typical on each side.
Note 1: Output contact is made by die attaching the
backside of the die.
305 µm
12 mil
OPTIONAL
OUTPUT
[1]
6-413
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