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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0470
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 12.5 dBm Typical P
1.0␣ GHz
1 dB
at
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
• 8.5 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic Gold-ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
Description
The MSA-0470 is a high performance silicon bipolar Monolithic
bias resistor for temperature and
current stability also allows bias
flexibility.
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
70 mil Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
d
= 5.25 V
C
block
5965-9576E
6-334
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MSA-0470 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 100 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 8.7 mW/° C for T
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of θ
MENTS section “Thermal Resistance” for more information.
[2,3]
650 mW
> 125° C.
C
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 115°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 50 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5
Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ± 1.0
P
3 dB Bandwidth GHz 4.0
Input VSWR f = 0.1 to 2.5 GHz 1.7:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 2.5 GHz 2.0:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 25.5
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.75 5.25 5.75
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
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Page 3
MSA-0470 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 50 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .18 179 8.5 2.67 176 –16.4 .151 1 .10 –14
0.2 .18 179 8.5 2.67 172 –16.4 .151 2 .10 –30
0.4 .18 179 8.5 2.67 163 –16.4 .152 3 .13 –50
0.6 .17 –179 8.5 2.65 155 –16.2 .155 5 .16 –67
0.8 .16 –176 8.4 2.64 147 –16.1 .158 8 .19 –79
1.0 .16 –174 8.3 2.61 138 –15.9 .161 6 .22 –90
1.5 .16 –166 8.2 2.56 117 –15.5 .169 9 .29 –111
2.0 .21 –163 7.8 2.46 97 –14.6 .186 9 .33 –131
2.5 .26 –162 7.3 2.33 83 –13.8 .204 12 .36 –142
3.0 .32 –170 6.5 2.12 65 –13.5 .212 10 .40 –156
3.5 .37 –177 5.7 1.93 38 –13.2 .220 7 .40 –164
4.0 .40 175 4.7 1.73 33 –12.6 .234 3 .40 –170
4.5 .41 166 3.9 1.57 20 –12.4 .239 –1 .39 –173
5.0 .42 155 3.1 1.44 7 –11.9 .255 –6 .37 –176
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
12
10
8
Gain Flat to DC
(dB)
p
6
G
4
2
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 50 mA.
13
12
(dBm)
11
1 dB
P
10
9
8
(dB)
7
p
G
6
5
–55 –25 +25 +85 +125
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
=50mA.
d
P
1 dB
G
P
NF
TEMPERATURE (°C)
= 25° C
A
8
7
NF (dB)
6
5
80
TC = +125°C
T
= +25°C
C
T
= –55°C
C
60
40
(mA)
d
I
20
0
2345671
V
(V)
d
Figure 2. Device Current vs. Voltage.
21
18
Id = 70 mA
15
(dBm)
12
Id = 50 mA
1 dB
P
9
Id = 30 mA
6
3
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
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9
8
7
(dB)
p
G
6
5
4
20 40 50 60 7030
0.1 GHz
1.0 GHz
2.0 GHz
I
(mA)
d
Figure 3. Power Gain vs. Current.
7.5
7.0
6.5
NF (dB)
6.0
5.5
0.1 0.2 0.3 0.5 2.01.0
Id = 30 mA
I
= 50 mA
d
I
= 70 mA
d
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
Page 4
70 mil Package Dimensions
.040
1.02
42GROUND
RF OUTPUT
RF INPUT
AND BIAS
.020
.508
1
.004 ± .002
.10 ± .05
.070
1.70
.495 ± .030
12.57 ± .76
GROUND
3
Notes:
(unless otherwise specified)
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.035
.89
in
mm
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