Datasheet MSA-1000-GP4 Datasheet (HP)

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Page 1

Cascadable Silicon Bipolar

22 2

MMIC␣ Amplifier

Technical Data

MSA-1000

Features

• High Output Power:

+27 dBm Typical P

1dB

1.0␣ GHz

• Low Distortion:

37 dBm Typical IP3 at 1.0␣ GHz

• 8.5 dB Typical Gain at

1.0␣ GHz

• Impedance Matched to 25 Ω

for Push-Pull Configurations

Description

The MSA-1000 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use in a

push-pull configuration in a 25␣ Ω

system. The MSA-1000 can also be used as single-ended amplifier in a

50␣ Ω system with slightly reduced

performance. Typical applications include narrow and broadband RF

amplifiers in industrial and military systems.

The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f

MAX

, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility.

The recommended assembly procedure is gold-eutectic die

attach at 400°C and either wedge

or ball bonding using 0.7 mil gold wire.

This chip is intended to be used with an external blocking capacitor completing the shunt feedback

Chip Outline

[1]

path (closed loop). Data sheet characterization is given for a 80␣ pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.

Note:

1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.

[1]

Typical Push-Pull Biasing Configuration

5965-9553E

50 Ω

block

Fbl

MSA

2 2

MSA

Fbl

bias

RFC

block

= 15 V

block

RFC

bias

OUT

50 Ω

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MSA-1000 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 425 mA Power Dissipation RF Input Power +25 dBm

Junction Temperature 200°C Storage Temperature –65 to 200° C

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

Mounting␣ Surface

3. Derate at 100 mW/°C for T

4. The small spot size of this technique results in a higher, though more

accurate determination of θ

[2,3]

(TMS)

= 25°C.

Mounting␣ Surface

> 130°C.

than do alternate methods.

7.0 W

[1]

Thermal Resistance

θjc = 10°C/W

[2,4]

[3]

[1]

, T

= 25° C

[2]

: Id = 325 mA, Z

= 25 Ω Units Min. Typ. Max.

GHz 2.6

Electrical Specifications

Symbol Parameters and Test Conditions

∆G

3 dB

Power Gain (|S21|2) f = 1.0 GHz dB 8.5

Gain Flatness f = 0.1 to 2.0 GHz dB ±0.6

3 dB Bandwidth

Input VSWR f = 0.1 to 2.0 GHz 2.0:1

VSWR

Output VSWR f = 0.1 to 2.0 GHz 2.5:1

NF 25 Ω Noise Figure f = 1.0 GHz dB 7.0

1 dB

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 27.0

Third Order Intercept Point f = 1.0 GHz dBm 37.0

Group Delay f = 1.0 GHz psec 175

Device Voltage V 13.5 15.0 16.5

dV/dT Device Voltage Temperature Coefficient mV/°C –18.0

Notes:

1. The recommended operating current range for this device is 150 to 400 mA. Typical performance as a function of current is on the following page. RF performance of the chip is determined by packaging and testing 10 devices per wafer.

3. Referenced from 0.1 GHz gain (GP).

Part Number Ordering Information

Part Number Devices Per Tray

MSA-1000-GP4 100

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MSA-1000 Typical Scattering Parameters

Freq.

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

[1,2]

(Z = 50 Ω, TA = 25° C, I

= 325 mA)

0.001 .41 –121 15.5 5.95 149 –17.7 .130 22 .43 –99 0.68

0.005 .52 –167 8.7 2.73 156 –15.7 .164 6 .48 –161 1.02

0.010 .54 –174 7.7 2.41 166 –15.6 .166 3 .46 –171 1.12

0.050 .54 –179 7.3 2.31 174 –15.7 .165 1 .46 –178 1.17

0.100 .55 179 7.2 2.30 173 –15.7 .165 –1 .46 –179 1.17

0.200 .55 178 7.2 2.30 168 –15.7 .165 –1 .47 177 1.16

0.400 .54 176 7.2 2.29 157 –15.7 .165 –3 .48 176 1.16

0.600 .52 174 7.2 2.30 146 –15.8 .163 –4 .48 174 1.16

0.800 .51 174 7.2 2.29 134 –15.8 .161 –5 .48 173 1.15

1.000 .50 172 7.2 2.29 121 –15.9 .160 –5 .49 172 1.12

1.200 .48 173 7.2 2.28 108 –16.0 .158 –6 .49 172 1.10

1.400 .47 175 7.1 2.26 96 –16.2 .155 –7 .50 174 1.05

1.600 .46 178 6.8 2.20 83 –16.3 .153 –7 .51 175 1.00

1.800 .46 179 6.4 2.09 62 –16.5 .150 –8 .53 176 0.94

2.000 .48 –177 6.0 1.99 56 –16.6 .148 –10 .65 –179 0.68

2.500 .56 –170 4.4 1.65 35 –17.0 .141 –1 .54 178 .91

3.000 .61 –171 2.7 1.36 12 –16.7 .147 1 .69 –176 .52

Notes:

1. S-parameters are de-embedded from 100 mil BeO package measured data using the package model found in the DEVICE MODELS section.

2. S-parameter data assumes an external 80 pF capacitor. Low frequency performance can be extended using a larger valued capacitor.

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Typical Performance, T

(unless otherwise noted)

GAIN (dB)

2.0 GHz

1816 20 22 26 2824 30 32

POWER OUT (dBm)

Figure 1. Typical Gain vs. Power Out, ZO = 25 Ω, Id = 325 mA.

ZO = 50 Ω

(dB)

GAIN

Closed Loop

Open Loop

0.5 GHz

1.0 GHz

1.5 GHz

= 25° C

(dBm)

(dBm) IP

1 dB

200150 250 300 350 400

(mA)

1 dB

Figure 2. Output Power at 1 dB Gain Compression, Third Order Intercept

Point vs. Current, Z f=1.0GHz.

= 25 Ω,

(dBm)

1 dB

+25–50 +100

TEMPERATURE (°C)

0.5 GHz

1.0 GHz

1.0 GHz,

4.0 GHz

2.0 GHz

Figure 3. Output Power at 1 dB Gain Compression vs. Case Temperature,

= 25 Ω, Id = 325 mA.

0.1 0.2 0.3 0.5 2.01.0 3.0 FREQUENCY (GHz)

Figure 4. Gain vs. Frequency, Id = 325 mA.

MSA-1000 Bonding Diagram

Capacitor

A10

(80 pF typ)

222

Input Trace

MSA Die

Numbers refer to pin contacts listed on the Chip Outline.

MSA-1000 Chip Dimensions

Output Trace

(backside contact)

Ground

22 2

917 µm

36.1 mil

Unless otherwise specified, tolerances are ±13 µm/±0.5 mils. Chip thickness is 114 µm/4.5 mil. Bond Pads are 41 µm/1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die.

495 µm

19.5 mil

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