Datasheet MSA-0611-BLK, MSA-0611-TR1 Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifiers

Technical Data

MSA-0635, -0636

Features

• Cascadable 50 Ω Gain Block

• Low Operating Voltage:

3.5 V Typical V

d

• 3 dB Bandwidth:

DC to 0.9 GHz

• High Gain:

19.0␣ dB Typical at 0.5 GHz

• Low Noise Figure:

2.8 dB Typical at 0.5 GHz

• Cost Effective Ceramic
Microstrip Package

Description

The MSA-0635 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is

designed for use as a general

purpose 50 Ω gain block. Typical

applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f

MAX

,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

Available in cut lead version
(package 36) as MSA-0636.

35 micro-X Package

Note:

1. Short leaded 36 package available

upon request.

[1]

Typical Biasing Configuration

R

bias

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

V

= 3.5 V

d

C

block

5965-9585E

V

CC

> 5 V

6-370

MSA-0635, -0636 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 50 mA
Power Dissipation
RF Input Power +13 dBm

Junction Temperature 200°C

Storage Temperature

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 6.5 mW/° C for T

4. Storage above +150°C may tarnish the leads of this package making it

5. The small spot size of this technique results in a higher, though more

= 25°C.

CASE

difficult to solder into a circuit.

accurate determination of θ

MENTS section “Thermal Resistance” for more information.

[2,3]

[4]

C

200 mW

–65 to 200° C

> 169° C.

than do alternate methods. See MEASURE-

jc

[1]

Thermal Resistance

θjc = 155°C/W

[2,5]

:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 16 mA, Z

G

P

∆G

f

3 dB

VSWR

Power Gain (|S21|2) f = 0.1 GHz dB 19.0 20.5 22.0

Gain Flatness f = 0.1 to 2.5 GHz dB ±0.7 ± 1.0

P

3 dB Bandwidth GHz 0.9

Input VSWR f = 0.1 to 1.5 GHz 1.4:1

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

Output VSWR f = 0.1 to 1.5 GHz 1.3:1

NF 50 Ω Noise Figure f = 0.5 GHz dB 2.8 4.0

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 0.5 GHz dBm 2.0

Third Order Intercept Point f = 0.5 GHz dBm 14.5

Group Delay f = 0.5 GHz psec 200

Device Voltage V 3.1 3.5 3.9

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Note:

1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.

6-371

MSA-0635, -0636 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 16 mA)

d

22

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k

0.1 .03 –178 20.5 10.59 171 –23.4 .068 5 .04 –44 1.05

0.2 .02 –177 20.3 10.31 161 –22.9 .071 8 .05 –68 1.04

0.3 .02 –164 20.0 9.96 152 –22.4 .076 14 .06 –87 1.04

0.4 .02 –116 19.6 9.55 144 –22.0 .079 19 .07 –104 1.03

0.5 .02 –100 19.2 9.08 136 –21.8 .081 21 .09 –114 1.04

0.6 .04 –89 18.7 8.59 128 –21.3 .086 24 .09 –123 1.04

0.8 .07 –96 17.7 7.66 115 –20.2 .098 29 .10 –140 1.03

1.0 .10 –108 16.6 6.79 103 –19.4 .107 31 .11 –156 1.02

1.5 .17 –134 14.2 5.13 79 –17.2 .138 30 .12 172 1.03

2.0 .24 –160 12.1 4.01 60 –15.8 .163 26 .12 148 1.04

2.5 .31 –178 10.3 3.26 48 –15.1 .175 27 .12 140 1.08

3.0 .37 166 8.7 2.72 34 –14.4 .190 24 .11 135 1.10

3.5 .42 151 7.4 2.33 21 –13.9 .203 19 .10 144 1.11

4.0 .46 139 6.2 2.04 9 –13.3 .216 16 .08 167 1.11

4.5 .48 126 5.1 1.81 –3 –12.8 .229 12 .08 –173 1.11

5.0 .52 110 4.2 1.62 –15 –12.2 .245 8 .09 –173 1.09

Note:

1. A model for this device is available in the DEVICE MODELS section.

Typical Performance, T

(unless otherwise noted)

21

Gain Flat to DC

18

15

12

(dB)

p

G

9

6

3

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, Id = 16 mA.

21
20

19

Gp (dB)

18
17

5
4

3

(dBm)

2

1 dB

P

1
0

–55 –25 +25 +85 +125

TEMPERATURE (°C)

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
Id=16mA.

G

P

NF
P

1 dB

= 25° C

A

5
4

3
2

NF (dB)

1
0

25

20

15

(mA)

d

I

10

TC = +125°C
TC = +25°C
TC = –55°C

5

0

102345

V

(V)

d

(dB)

p

G

25

20

15

10

5

0

10 20 25 3015

Id (mA)

Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current.

12

Id = 30 mA

8

Id = 20 mA

(dBm)

4

1 dB

P

Id = 16 mA

0

Id = 12 mA

-4

0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain

4.0

3.5

3.0

NF (dB)

2.5

2.0

0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Id= 12 mA
Id= 16 mA, 30 mA
Id= 20 mA

Figure 6. Noise Figure vs. Frequency.

Compression vs. Frequency.

6-372

0.1 GHz

0.5 GHz

1.0 GHz

2.0 GHz

35 micro-X Package Dimensions

4

.085

2.15

RF INPUT

13

.057 ± .010

1.45 ± .25

GROUND

RF OUTPUT
AND BIAS

A06

2

GROUND

Notes:
(unless otherwise specified)

1. Dimensions are

.100

2.54

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.020
.508

.083

2.11

in

mm

DIA.

.022

.56

.455 ± .030

11.54 ± .75
.006 ± .002

.15 ± .05

6-373