
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0435, -0436
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 3.8 GHz
• 12.5 dBm Typical P
1 dB
at
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applications.
1.0␣ GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
reliability. The use of an external
Description
The MSA-0435 is a high performance silicon bipolar Monolithic
bias resistor for temperature and
current stability also allows bias
flexibility.
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
Available in cut lead version
(package 36) as MSA-0436.
Typical Biasing Configuration
R
bias
35 micro-X Package
,
MAX
Note:
1. Short leaded 36 package available
upon request.
V
> 7 V
CC
[1]
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
d
= 5.25 V
C
block
5965-9575E
6-330

MSA-0435, -0436 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 100 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 7.1 mW/° C for TC > 109° C.
4. Storage above +150° C may tarnish the leads of this package making it
5. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
difficult to solder into a circuit.
accurate determination of q
MENTS section “Thermal Resistance” for more information.
[2,3]
650 mW
[4]
than do alternate methods. See MEASURE-
jc
–65 to 200° C
[1]
Thermal Resistance
θjc = 140°C/W
[2,5]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 50 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5
Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ± 1.0
P
3 dB Bandwidth GHz 3.8
Input VSWR f = 0.1 to 2.5 GHz 1.4:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 2.5 GHz 1.9:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5
Third Order Intercept Point f = 1.0 GHz dBm 25.5
Group Delay f = 1.0 GHz psec 125
Device Voltage V 4.75 5.25 5.75
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number No. of Devices Container
MSA-0435 10 Strip
MSA-0436-BLK 100 Antistatic Bag
MSA-0436-TR1 1000 7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-331

MSA-0435, -0436 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
S
= 50 mA)
d
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .08 175 8.5 2.67 175 –16.4 .151 1 .20 –10
0.2 .08 172 8.5 2.68 170 –16.3 .153 2 .20 –16
0.4 .07 171 8.5 2.67 161 –16.4 .151 3 .20 –33
0.6 .07 166 8.5 2.66 151 –16.2 .155 6 .21 –45
0.8 .05 169 8.4 2.64 142 –16.1 .156 8 .22 –57
1.0 .05 175 8.3 2.61 136 –16.0 .159 10 .24 –68
1.5 .04 –142 8.1 2.55 109 –15.0 .178 13 .26 –96
2.0 .09 –145 7.8 2.46 87 –14.2 .196 15 .28 –123
2.5 .14 –154 7.3 2.33 71 –13.1 .221 18 .31 –140
3.0 .22 –175 6.6 2.14 50 –12.5 .238 14 .33 –160
3.5 .28 170 5.8 1.94 32 –11.7 .260 9 .35 –173
4.0 .34 156 4.8 1.74 15 –11.3 .271 4 .34 –179
4.5 .37 140 3.9 1.57 –1 –10.7 .291 –2 .33 –171
5.0 .42 120 3.0 1.41 –16 –10.4 .302 –8 .32 –160
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
12
10
8
Gain Flat to DC
(dB)
6
p
G
4
2
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 50 mA.
13
12
(dBm)
11
1 dB
P
10
9
8
(dB)
7
p
G
6
5
–55 –25 +25 +85 +125
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
=50mA.
d
P
1 dB
G
P
NF
TEMPERATURE, (°C)
= 25° C
A
8
7
6
NF (dB)
5
80
TC = +125°C
= +25°C
T
C
= –55°C
T
C
60
40
(mA)
d
I
20
0
2345671
V
(V)
d
Figure 2. Device Current vs. Voltage.
21
18
Id = 70 mA
15
(dBm)
12
Id = 50 mA
1 dB
P
9
Id = 30 mA
6
3
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
9
8
7
(dB)
p
G
6
Id (mA)
0.1 GHz
1.0 GHz
2.0 GHz
5
4
20 40 50 60 7030
Figure 3. Power Gain vs. Current.
7.5
7.0
6.5
NF (dB)
6.0
5.5
0.1 0.2 0.3 0.5 2.01.0
Id = 30 mA
= 50 mA
I
d
= 70 mA
I
d
FREQUENCY (GHz)
4.0
Figure 6. Noise Figure vs. Frequency.
6-332

35 micro-X Package Dimensions
4
.085
2.15
RF INPUT
13
.057 ± .010
1.45 ± .25
GROUND
RF OUTPUT
AND BIAS
A04
2
GROUND
Notes:
(unless otherwise specified)
1. Dimensions are
.100
2.54
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.020
.508
.083
2.11
in
mm
DIA.
.022
.56
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
6-333