Datasheet MSA-0436-TR1, MSA-0435, MSA-0436-BLK Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifiers

Technical Data

MSA-0435, -0436

Features

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 3.8 GHz

• 12.5 dBm Typical P

1 dB

at

designed for use as a general

purpose 50 Ω gain block. Typical

applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica­tions.

1.0␣ GHz

• 8.5 dB Typical Gain at

1.0␣ GHz

• Unconditionally Stable
(k>1)

• Cost Effective Ceramic
Microstrip Package

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and
reliability. The use of an external

Description

The MSA-0435 is a high perfor­mance silicon bipolar Monolithic

bias resistor for temperature and
current stability also allows bias

flexibility.
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is

Available in cut lead version

(package 36) as MSA-0436.

Typical Biasing Configuration

R

bias

35 micro-X Package

,

MAX

Note:

1. Short leaded 36 package available

upon request.

V

> 7 V

CC

[1]

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

V

d

= 5.25 V

C

block

5965-9575E

6-330

MSA-0435, -0436 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 100 mA
Power Dissipation
RF Input Power +13 dBm

Junction Temperature 200°C

Storage Temperature

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. T

3. Derate at 7.1 mW/° C for TC > 109° C.

4. Storage above +150° C may tarnish the leads of this package making it

5. The small spot size of this technique results in a higher, though more

= 25°C.

CASE

difficult to solder into a circuit.

accurate determination of q
MENTS section “Thermal Resistance” for more information.

[2,3]

650 mW

[4]

than do alternate methods. See MEASURE-

jc

–65 to 200° C

[1]

Thermal Resistance

θjc = 140°C/W

[2,5]

:

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 50 mA, Z

G

P

∆G

f

3 dB

VSWR

Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5

Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ± 1.0

P

3 dB Bandwidth GHz 3.8

Input VSWR f = 0.1 to 2.5 GHz 1.4:1

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

Output VSWR f = 0.1 to 2.5 GHz 1.9:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 12.5

Third Order Intercept Point f = 1.0 GHz dBm 25.5

Group Delay f = 1.0 GHz psec 125

Device Voltage V 4.75 5.25 5.75

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Note:

1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current

is on the following page.

Part Number Ordering Information

Part Number No. of Devices Container

MSA-0435 10 Strip
MSA-0436-BLK 100 Antistatic Bag
MSA-0436-TR1 1000 7" Reel

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-331

MSA-0435, -0436 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

S

= 50 mA)

d

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .08 175 8.5 2.67 175 –16.4 .151 1 .20 –10

0.2 .08 172 8.5 2.68 170 –16.3 .153 2 .20 –16

0.4 .07 171 8.5 2.67 161 –16.4 .151 3 .20 –33

0.6 .07 166 8.5 2.66 151 –16.2 .155 6 .21 –45

0.8 .05 169 8.4 2.64 142 –16.1 .156 8 .22 –57

1.0 .05 175 8.3 2.61 136 –16.0 .159 10 .24 –68

1.5 .04 –142 8.1 2.55 109 –15.0 .178 13 .26 –96

2.0 .09 –145 7.8 2.46 87 –14.2 .196 15 .28 –123

2.5 .14 –154 7.3 2.33 71 –13.1 .221 18 .31 –140

3.0 .22 –175 6.6 2.14 50 –12.5 .238 14 .33 –160

3.5 .28 170 5.8 1.94 32 –11.7 .260 9 .35 –173

4.0 .34 156 4.8 1.74 15 –11.3 .271 4 .34 –179

4.5 .37 140 3.9 1.57 –1 –10.7 .291 –2 .33 –171

5.0 .42 120 3.0 1.41 –16 –10.4 .302 –8 .32 –160

A model for this device is available in the DEVICE MODELS section.

22

Typical Performance, T

(unless otherwise noted)

12

10

8

Gain Flat to DC

(dB)

6

p

G

4

2

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)

Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 50 mA.

13
12

(dBm)

11

1 dB

P

10

9

8

(dB)

7

p

G

6
5

–55 –25 +25 +85 +125

Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I

=50mA.

d

P

1 dB

G

P

NF

TEMPERATURE, (°C)

= 25° C

A

8

7

6

NF (dB)

5

80

TC = +125°C

= +25°C

T

C

= –55°C

T

C

60

40

(mA)

d

I

20

0

2345671

V

(V)

d

Figure 2. Device Current vs. Voltage.

21

18

Id = 70 mA

15

(dBm)

12

Id = 50 mA

1 dB

P

9

Id = 30 mA

6

3

0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.

9

8

7

(dB)

p

G

6

Id (mA)

0.1 GHz

1.0 GHz

2.0 GHz

5

4

20 40 50 60 7030

Figure 3. Power Gain vs. Current.

7.5

7.0

6.5

NF (dB)

6.0

5.5

0.1 0.2 0.3 0.5 2.01.0

Id = 30 mA

= 50 mA

I

d

= 70 mA

I

d

FREQUENCY (GHz)

4.0

Figure 6. Noise Figure vs. Frequency.

6-332

35 micro-X Package Dimensions

4

.085

2.15

RF INPUT

13

.057 ± .010

1.45 ± .25

GROUND

RF OUTPUT
AND BIAS

A04

2

GROUND

Notes:
(unless otherwise specified)

1. Dimensions are

.100

2.54

2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13

.020
.508

.083

2.11

in

mm

DIA.

.022

.56

.455 ± .030

11.54 ± .75
.006 ± .002

.15 ± .05

6-333