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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0420
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• 16.0 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Hermetic Metal/Beryllia
Microstrip Package
1 dB
at
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
performance, uniformity and
Description
The MSA-0420 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
200 mil BeO Package
,
MAX
V
> 10 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
= 6.3 V
d
C
block
5965-9574E
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MSA-0420 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 120 mA
Power Dissipation
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200° C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
3. Derate at 25 mW/° C for TC > 166°C.
4. The small spot size of this technique results in a higher, though more
= 25°C.
CASE
accurate determination of q
MENTS section “Thermal Resistance” for more information.
[2,3]
850 mW
than do alternate methods. See MEASURE-
jc
[1]
Thermal Resistance
θjc = 40°C/W
[2,4]
:
Electrical Specifications
Symbol Parameters and Test Conditions: Id = 90 mA, Z
G
P
∆G
f
3 dB
VSWR
Power Gain (|S21|2) f = 0.1 GHz dB 7.5 8.5 9.5
Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ± 1.0
P
3 dB Bandwidth GHz 4.3
Input VSWR f = 0.1 to 2.5 GHz 1.7:1
[1]
, T
A
= 25° C
= 50 Ω Units Min. Typ. Max.
O
Output VSWR f = 0.1 to 2.5 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 14.0 16.0
Third Order Intercept Point f = 1.0 GHz dBm 30.0
Group Delay f = 1.0 GHz psec 140
Device Voltage V 5.7 6.3 6.9
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
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Page 3
MSA-0420 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 90 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .25 177 8.6 2.70 175 –16.4 .151 1 .03 –30
0.2 .25 173 8.6 2.69 170 –16.5 .150 1 .04 –59
0.4 .24 167 8.6 2.69 159 –16.5 .150 –1 .07 –79
0.6 .22 160 8.5 2.67 149 –16.4 .152 –2 .10 –92
0.8 .21 154 8.5 2.66 139 –16.3 .154 –2 .13 –99
1.0 .20 148 8.3 2.60 129 –16.1 .156 –3 .16 –109
1.5 .14 136 8.1 2.54 104 –15.6 .166 –4 .22 –124
2.0 .10 136 7.9 2.48 80 –14.8 .181 –6 .25 –139
2.5 .08 161 7.4 2.34 62 –14.3 .193 –5 .28 –147
3.0 .10 178 7.0 2.24 39 –13.7 .206 –11 .31 –157
3.5 .13 176 6.6 2.13 18 –12.6 .233 –18 .34 –167
4.0 .14 163 5.9 1.97 –3 –11.9 .253 –25 .36 –176
4.5 .14 133 5.3 1.83 –23 –11.3 .273 –33 .37 174
5.0 .16 91 4.5 1.69 –343 –10.5 .299 –43 .37 162
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
12
10
8
Gain Flat to DC
(dB)
p
G
6
4
2
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 90 mA.
18
16
(dBm)
14
1 dB
P
12
(dB)
p
G
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I
d
P
1 dB
9
G
8
7
6
5
–55 –25 +25 +85 +125
P
NF
TEMPERATURE (°C)
=90mA.
= 25° C
A
9
8
7
NF (dB)
6
5
100
T
= +125°C
C
T
= +25°C
C
80
T
= –25°C
C
60
(mA)
d
I
40
20
0
02468
V
(V)
d
Figure 2. Device Current vs. Voltage.
24
21
Id = 110 mA
18
Id = 90 mA
(dBm)
15
1 dB
P
Id = 60 mA
12
Id = 30 mA
9
6
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
9
8
7
(dB)
p
G
6
5
4
30 50 70 90 110
0.1 GHz
1.0 GHz
2.0 GHz
(mA)
I
d
Figure 3. Power Gain vs. Current.
7.5
Id= 110 mA
I
= 30 mA
d
I
= 90 mA
d
7.0
I
= 60 mA
d
6.5
NF (dB)
6.0
5.5
0.1 0.2 0.3 0.5 2.01.0
FREQUENCY (GHz)
4.0
Figure 6. Noise Figure vs. Frequency.
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200 mil BeO Package Dimensions
4
GROUND
.300 ± .025
7.62 ± .64
45°
1
3
.030
.76
RF INPUT
NO REFERENCE
GROUND
.048 ± .010
1.21 ± .25
.060
1.52
.128
3.25
.205
5.21
RF OUTPUT
AND BIAS
Notes:
(unless otherwise specified)
2
1. Dimensions are
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.004 ± .002
.10 ± .05
.023
.57
in
mm
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