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Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0404
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.5 GHz
• 7.5 dB Typical Gain at
1.0␣ GHz
• 11.5 dBm Typical P
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Low Cost Plastic Package
1 dB
at
plastic package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metallization to achieve excellent
Description
The MSA-0404 is a high performance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R
bias
04A Plastic Package
,
MAX
V
> 7 V
CC
RFC (Optional)
C
block
IN OUT
4
3
MSA
1
2
V
d
= 5.25 V
C
block
5965-9573E
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MSA-0404 Absolute Maximum Ratings
Parameter Absolute Maximum
Device Current 85 mA
Power Dissipation
[2,3]
500 mW
RF Input Power +13 dBm
Junction Temperature 150°C
Storage Temperature –65 to 150° C
[1]
Thermal Resistance
θjc = 85° C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. T
3. Derate at 10 mW/° C for T
CASE
= 25°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
Electrical Specifications
[1]
, T
A
= 25° C
information.
Symbol Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Units Min. Typ. Max.
G
P
Power Gain (|S21|2) f = 0.1 GHz dB 8.3
f = 0.5 GHz 7.0 8.0
f = 1.0 GHz 7.5
∆G
f
3 dB
VSWR
Gain Flatness f = 0.1 to 2.0 GHz dB ±1.0
P
3 dB Bandwidth GHz 2.5
Input VSWR f = 0.1 to 2.5 GHz 1.4:1
Output VSWR f = 0.1 to 2.5 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 7.0
P
IP
t
V
1 dB
3
D
d
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 11.5
Third Order Intercept Point f = 1.0 GHz dBm 24.5
Group Delay f = 1.0 GHz psec 150
Device Voltage V 4.75 5.25 5.75
dV/dT Device Voltage Temperature Coefficient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current
is on the following page.
[2,4]
:
> 108°C.
C
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Page 3
MSA-0404 Typical Scattering Parameters (Z
Freq.
S
11
S
21
= 50 Ω, TA = 25° C, I
O
S
12
= 50 mA)
d
S
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang
0.1 .16 175 8.3 2.59 174 –16.2 .156 0 .13 –13
0.2 .16 170 8.2 2.58 168 –16.2 .155 2 .13 –25
0.4 .15 161 8.1 2.54 156 –16.0 .158 4 .14 –47
0.6 .14 152 8.0 2.51 145 –16.0 .158 6 .16 –64
0.8 .12 145 7.8 2.46 133 –15.8 .163 8 .19 –79
1.0 .11 141 7.7 2.41 122 –15.4 .169 9 .21 –91
1.5 .07 141 7.2 2.29 96 –14.6 .186 13 .24 –118
2.0 .09 161 6.6 2.14 71 –13.3 .215 12 .26 –140
2.5 .14 159 5.9 1.98 53 –12.4 .240 13 .28 –157
3.0 .22 148 5.1 1.80 33 –11.7 .260 7 .29 –176
3.5 .30 128 4.3 1.64 13 –10.9 .286 0 .32 167
4.0 .38 109 3.2 1.45 –6 –10.4 .301 –7 .33 153
5.0 .47 91 2.1 1.27 –23 –10.2 .310 –15 .35 137
6.0 .55 75 1.0 1.09 –39 –10.1 .312 –24 .37 120
A model for this device is available in the DEVICE MODELS section.
22
Typical Performance, T
(unless otherwise noted)
12
10
8
Gain Flat to DC
(dB)
p
G
6
4
2
0
0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY (GHz)
Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C, Id = 50 mA.
12
11
(dBm)
1 dB
10
P
8
7
NF (dB)
6
–25 0 +25 +55 +85
TEMPERATURE (°C)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
=50mA.
I
d
P
1 dB
G
P
NF
= 25° C
A
8
7
(dB)
p
G
6
80
TC = +85°C
T
= +25°C
C
60
T
= –25°C
C
40
(mA)
d
I
20
0
2345671
Vd (V)
Figure 2. Device Current vs. Voltage.
21
18
Id = 70 mA
15
Id = 50 mA
(dBm)
12
1 dB
P
9
Id = 30 mA
6
3
0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
9
8
7
(dB)
p
G
6
Id (mA)
0.1 GHz
1.0 GHz
2.0 GHz
5
4
20 40 50 60 7030
Figure 3. Power Gain vs. Current.
8.0
7.5
7.0
NF (dB)
6.5
6.0
0.1 0.2 0.3 0.5 2.01.0 4.0
Id = 30 mA
I
= 50 mA
d
I
= 70 mA
d
FREQUENCY (GHz)
Figure 6. Noise Figure vs. Frequency.
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04A Plastic Package Dimensions
)
12.39 ± 0.76
(0.488 ± 0.030)
4
GROUND
RF INPUT
0.76 (0.030)
2.54 ± 0.25
(0.100 ± 0.010)
1
4.29
(0.169)
0.51
(0.020)
DIMENSIONS ARE IN MILLIMETERS (INCHES).
4
2
3.68
(0.145)
1
GROUND
0.76 (0.030)
DIA.
RF OUTPUT
& BIAS
3
0.96 (0.038)
NOTES:
(UNLESS OTHERWISE SPECIFIED)
1. DIMENSIONS ARE IN
MILLIMETERS (INCHES)
2. TOLERANCES
mm .XX = ± 0.13
in .XXX = ± 0.005
0.20 ± 0.050
(0.008 ± 0.002
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