Datasheet MSA-0386-TR1, MSA-0386-BLK Datasheet (HP)

Cascadable Silicon Bipolar
MMIC␣ Amplifier

Technical Data

MSA-0386

Features

• Cascadable 50 Ω Gain Block

• 3 dB Bandwidth:

DC to 2.4 GHz

• 12.0 dB Typical Gain at

1.0␣ GHz

• 10.0 dBm Typical P

1.0␣ GHz

• Unconditionally Stable
(k>1)

• Surface Mount Plastic
Package

• Tape-and-Reel Packaging
Option Available

Note:

1. Refer to PACKAGING section “Tape­and-Reel Packaging for Surface
Mount Semiconductors”.

[1]

1 dB

at

The MSA-0386 is a high perfor­mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a

general purpose 50 Ω gain block.

Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.

The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f

MAX

,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli­zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.

86 Plastic PackageDescription

Typical Biasing Configuration

R

bias

RFC (Optional)

C

block

IN OUT

4

3

MSA

1

2

C

block

= 5 V

V

d

5965-9571E

V

> 7 V

CC

6-314

MSA-0386 Absolute Maximum Ratings

Parameter Absolute Maximum

Device Current 70 mA
Power Dissipation

[2,3]

400 mW

RF Input Power +13 dBm

Junction Temperature 150°C
Storage Temperature –65 to 150° C

[1]

Thermal Resistance

θjc = 115°C/W

Notes:

1. Permanent damage may occur if
any of these limits are exceeded.

CASE

= 25°C.

2. T

3. Derate at 9.5 mW/° C for T

4. See MEASUREMENTS section
“Thermal Resistance” for more
information.

Electrical Specifications

Symbol Parameters and Test Conditions: Id = 35 mA, Z

G

P

Power Gain (|S21|2) f = 0.1 GHz dB 12.5

[1]

, T

A

= 25° C

= 50 Ω Units Min. Typ. Max.

O

f = 1.0 GHz 10.0 12.0

∆G

P

f

3 dB

VSWR

Gain Flatness f = 0.1 to 1.6 GHz dB ±0.7

3 dB Bandwidth GHz 2.4

Input VSWR f = 0.1 to 3.0 GHz 1.5:1

Output VSWR f = 0.1 to 3.0 GHz 1.7:1

NF 50 Ω Noise Figure f = 1.0 GHz dB 6.0

P

IP

t

V

1 dB

3

D

d

Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 10.0

Third Order Intercept Point f = 1.0 GHz dBm 23.0

Group Delay f = 1.0 GHz psec 140

Device Voltage V 4.0 5.0 6.0

dV/dT Device Voltage Temperature Coefficient mV/°C –8.0

Note:

1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.

[2,4]

:

> 116° C.

C

Part Number Ordering Information

Part Number No. of Devices Container

MSA-0386-TR1 1000 7" Reel
MSA-0386-BLK 100 Antistatic Bag

For more information, see “Tape and Reel Packaging for Semiconductor Devices”.

6-315

MSA-0386 Typical Scattering Parameters (Z

Freq.

S

11

S

21

= 50 Ω, TA = 25° C, I

O

S

12

= 35 mA)

d

S

GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang

0.1 .11 174 12.5 4.22 175 –18.3 .122 1 .13 –11

0.2 .11 169 12.5 4.20 170 –18.2 .124 2 .13 –20

0.4 .11 159 12.4 4.16 159 –18.1 .124 5 .14 –41

0.6 .10 149 12.2 4.09 149 –17.9 .128 8 .15 –60

0.8 .10 142 12.1 4.00 139 –17.6 .131 9 .16 –78

1.0 .09 137 11.9 3.93 129 –17.4 .136 11 .18 –93

1.5 .09 139 11.2 3.61 106 –16.6 .149 14 .20 –129

2.0 .12 149 10.3 3.28 83 –15.3 .171 13 .23 –157

2.5 .18 150 9.4 2.95 66 –14.4 .190 12 .26 –176

3.0 .25 142 8.3 2.60 48 –13.7 .207 9 .29 167

3.5 .32 133 7.2 2.29 31 –13.2 .219 3 .30 152

4.0 .40 124 6.0 2.01 15 –13.0 .224 –1 .31 142

5.0 .53 106 3.7 1.53 –13 –12.8 .228 –11 .32 128

A model for this device is available in the DEVICE MODELS section.

22

Typical Performance, T

(unless otherwise noted)

14

12

10

8

(dB)

p,

G

6

Id = 20 mA

4

I

= 35 mA

d

I

= 50 mA

d

2

Gain Flat to DC

0

0.1 0.3 0.5 1.0 3.0 6.0
FREQUENCY, (GHz)

Figure 1. Typical Power Gain vs.
Frequency, TA = 25°C.

18

15

Id = 50 mA

12

(dBm)

9

Id = 35 mA

1 dB

P

6

3

Id = 20 mA

0

0.1 0.2 0.3 0.5 2.01.0 4.0
FREQUENCY (GHz)

Figure 4. Output Power at 1 dB Gain
Compression vs. Frequency.

= 25° C

A

60

TC = +85°C

50

T

= +25°C

C

T

= –25°C

C

40

30

(mA)

d

I

20

10

0

0 234561

Vd (V)

Figure 2. Device Current vs. Voltage.

7.0

6.5

6.0

NF (dB)

5.5

5.0

0.1 0.2 0.3 0.5 2.01.0

Id = 20 mA
I

= 35 mA

d

I

= 50 mA

d

FREQUENCY (GHz)

Figure 5. Noise Figure vs. Frequency.

13
12

(dB)

p

G

11

7

6

NF (dB)

5

–25 0 +25 +55 +85

TEMPERATURE (°C)

G

P

11

P

1 dB

10

9

8

NF

Figure 3. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 1.0 GHz,
I

=35mA.

d

(dBm)

1 dB

P

6-316

86 Plastic Package Dimensions

0.51 ± 0.13

(0.020 ± 0.005)

RF INPUT

1.52 ± 0.25

(0.060 ± 0.010)

0.66 ± 0.013

(0.026 ± 0.005)

0.30 MIN

(0.012 MIN)

GROUND

45°

1

GROUND

2.67 ± 0.38

(0.105 ± 0.15)

(0.085 ± 0.005)

DIMENSIONS ARE IN MILLIMETERS (INCHES)

A03

5° TYP.

2.16 ± 0.13

4

RF OUTPUT
AND DC BIAS

3

2.34 ± 0.38

(0.092 ± 0.015)

2

(0.006 ± 0.002)

8° MAX
0° MIN

0.203 ± 0.051

C

L

6-317