Datasheet KGF1521 Datasheet (OKI)

E2Q0018-38-71

This version: Jul. 1998

Previous version: Jan. 1998

KGF1521¡ electronic components

¡ electronic components

KGF1521

Small-Signal Amplifier

GENERAL DESCRIPTION

The KGF1521 is a high-performance GaAs FET small-signal amplifier for L-band frequencies that
features low voltage operation, low current operation, low noise, and low distortion. The
KGF1521 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external
impedance-matching circuits are also required. Because of its high 3rd-order intercept point,
even at its low operating current, the KGF1521 is ideal as a small-signal amplifier for L-band
personal handy phones, such as digital keying cordless phones that require low intermodulation
properties.

FEATURES

• Low voltage and low current operation: 3 V, 2.5 mA (max.)

• Specifications guaranteed to a fixed matching circuit for 3 V, 1.9 GHz

• Low noise figure: 1.8 dB (typ.) at 1.9 GHz

• High linear gain: 12.5 dB (typ.) at 1.9 GHz

• High output power: 1 dB compression point = 0 dBm (typ.) at 1.9 GHz

• Low distortion: 3rd-order intercept point = 12 dBm (typ.) at 1.9 GHz

• Self-bias circuit configuration with built-in source capacitor

• Package: 4PSOP

PACKAGE DIMENSIONS

1.8±0.1

0.85±0.05

+0.1

0.6

–0.05

3.0±0.2

1.5±0.15

1.9±0.1

2.8±0.15

0.4

+0.1
–0.05

1.1±0.15

0.36 0.74

+0.03

0.125

–0

(Unit: mm)

0.3 MIN

0 to 0.15

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

42 alloy

Solder plating

5 mm or more

1/8

MARKING

(4) (3)

X

XF

KGF1521¡ electronic components

CIRCUIT

(1)

G(1)

(2)

D(3)

GND(4)

NUMERICAL

NUMERICAL

PRODUCT TYPE

S(2)

LOT
NUMBER

(1) Gate
(2) Source
(3) Drain
(4) GND

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ABSOLUTE MAXIMUM RATINGS

KGF1521¡ electronic components

Item

Drain-source voltage

Gate-source voltage

Drain current I

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DS

V

GS

DS

P

tot

T

ch

stg

Ta = 25°C

Ta = 25°C

V

V

Ta = 25°C 50mA —

Ta = 25°C

—

mW

°C

— 125°C

Min.

—

–3.0

—

—

–45

4.0

0.4

200

150

ELECTRICAL CHARACTERISTICS

(Ta = 25°C)

Item

Gate-source leakage current 30mA—VGS = –3 V —

Gate-drain leakage current 30mA—VGD = –6 V —

Drain-source leakage current 30mA—VDS = 3 V, VGS = –2 V —

Drain current —mA 15VDS = 3 V, VGS = 0 V 25

Operating current 2.5mA —(*1), P

Gate-source cut-off voltage –0.6V –1.4VDS = 3 V, IDS = 100 mA—

Transconductance —mS 14VDS = 3 V, IDS = 2 mA 17

Linear gain G

Output power —dBm

Third-order intercept point IP

Symbol Condition Max.Unit

I

GSS

I

GDO

I

DS(off)

I

DSS

V

GS(off)

g

P

I

D

m

LIN

O1

(*1)

3

= –20 dBm 2.0

IN

= –20 dBm

IN

dB

dBm ——12(*2), f2 = 1.901 GHz

Min.

—

–3.0

Typ.

1.8Noise figure F (*1) dB

0

2.5

—11.0 12.5(*1), P

*1 Self-bias condition: V

= 3 V ± 0.3 V, V

DD

= 0 V, f = 1.9 GHz

G

3/8

RF CHARACTERISTICS

KGF1521¡ electronic components

4/8

KGF1521¡ electronic components

5/8

Typical S Parameters

Freq(MHz)

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

500.0

600.0

700.0

800.0

900.0

1.006

1.004

1.001

0.998

0.995

0.992

0.987

0.983

0.978

0.972

0.966

0.959

0.950

0.941

0.935

0.924

0.915

0.905

0.893

0.881

0.866

0.852

0.837

0.821

0.806

0.790

–9.13

–10.96

–12.83

–14.68

–16.53

–18.33

–20.18

–22.02

–23.88

–25.70

–27.62

–29.46

–31.22

–33.22

–35.13

–37.04

–38.95

–40.60

–42.34

–44.23

–15.91

–47.73

–49.40

–51.16

–52.74

–54.25

1.330

1.338

1.346

1.353

1.354

1.359

1.359

1.369

1.374

1.376

1.388

1.397

1.393

1.409

1.418

1.434

1.440

1.435

1.440

1.458

1.448

1.455

1.447

1.467

1.454

1.462

176.30

172.44

168.98

165.93

163.08

160.07

157.16

154.84

152.28

149.79

146.67

144.51

141.98

138.88

136.15

133.84

131.23

128.21

125.19

122.85

120.01

116.96

114.13

111.27

108.42

105.45

0.010

0.012

0.013

0.015

0.016

0.018

0.018

0.020

0.021

0.022

0.022

0.022

0.023

0.023

0.023

0.022

0.023

0.024

0.023

0.023

0.023

0.024

0.025

0.027

0.029

0.032

77.66

75.14

74.67

74.75

74.68

72.86

73.49

72.57

71.18

70.96

71.48

70.80

70.04

71.52

72.15

75.12

80.13

80.50

82.84

87.86

91.51

97.20

105.76

110.78

118.12

122.68

KGF1521¡ electronic components

= 3 V, ID = 2.23 mA

V

DD

0.939

0.937

0.934

0.933

0.932

0.930

0.927

0.926

0.925

0.922

0.920

0.918

0.914

0.911

0.910

0.905

0.903

0.900

0.894

0.892

0.887

0.883

0.879

0.874

0.871

0.868

–6.40

–7.42

–8.59

–9.60

–10.71

–11.75

–12.88

–13.89

–14.99

–16.04

–17.08

–18.12

–18.95

–20.20

–21.19

–22.16

–23.29

–24.24

–25.15

–26.13

–26.95

–27.96

–28.80

–29.63

–30.58

–31.21

6/8

Typical S Parameters

V

= 3 V, ID = 2.23 mA

DD

Frequency : 0.5 to 3.0 GHz

Z0 = 50 W

KGF1521¡ electronic components

7/8

Test Circuit and Bias Configuration for KGF1521 at 1.9 GHz

KGF1521¡ electronic components

IN

C

C

T

1

R

G

T1: Z0 = 75 W, E = 23 deg
T

: Z0 = 100 W, E = 2 deg

2

T

: Z0 = 100 W, E = 68 deg

3

T

= T8: Z0 = 100 W, E = 10 deg

4

C

= 1.40 pF, C2 = 1.35 pF

1

C

C(DC Block)

RFC = 60 nH, R

T

T

2

T

4

C

1

= 1000 pF, C

= 1000 W

G

3

(1) (3)

KGF
1521

(4)

T

B(By-pass)

T

T

9

6

5

T

8

C

2

T5: Z0 = 100 W, E = 87 deg
T

: Z0 = 100 W, E = 25 deg

6

T

: Z0 = 75 W, E = 20 deg

7

T

: Z0 = 100 W, E = 5 deg

9

= 1000 pF, C

F(Feed through)

T

RFC

C

7

B

C

C

C

= 1000 pF

OUT

F

V

DD

8/8