Datasheet KGF1284 Datasheet (OKI)

E2Q0027-38-72

This version: Jul. 1998

Previous version: Jan. 1998

KGF1284¡ electronic components

¡ electronic components

KGF1284

Power FET (Plastic Package Type)

GENERAL DESCRIPTION

The KGF1284, housed in a SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF-to L-band. This device features high efficiency, high output power, and high gain. The KGF1284 specifications are guaranteed to a fixed matching circuit for

3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 21.5 dBm), high gain, and plastic package, the KGF1284 is ideal as a transmitter-driver amplifier for personal handy phones, such as digital keying cordless phones.

FEATURES

• Specifications guaranteed to a fixed matching circuit for 3.4 V, 1.9 GHz

• High output power: 21.5 dBm (min.) at 1.9 GHz

• High efficiency: 50% (typ.) at 1.9 GHz

• High linear gain: 12 dB (typ.) at 1.9 GHz

• Package: 3PMMP (SOT-89 type)

PACKAGE DIMENSIONS

4.5±0.1

+0.15

1.6

–0.10

+0.08

0.48

–0.05

3±0.1

0.4

+0.08 –0.05

1.5±0.1 1.5±0.1

0.4

+0.08 –0.05

0.11

±

2.5

0.2

±

0.2

±

4

±

0.05

0.39

(Unit: mm)

1.5±0.1

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

Cu

Solder plating

5 mm or more

1/7

MARKING

KGF1284¡ electronic components

CIRCUIT

(1)

(2)

(3)

Gate(1)

D2

XX

PRODUCT TYPE

LOT NUMBER (NUMERICAL or ALPHABETICAL)

Drain(3)

(1) Gate (2) Source (3) Drain

Source(2)

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ABSOLUTE MAXIMUM RATINGS

KGF1284¡ electronic components

Item

Drain-source voltage

Gate-source voltage

Drain current I

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DS

V

GS

DS

P

tot

T

ch

stg

Ta = 25°C

V

Ta = 25°C 0.8A —

Ta = Tc = 25°C

—

W

°C

— 125°C

Min.

—

–5.0

—

–45

ELECTRICAL CHARACTERISTICS

Item

Gate-source leakage current 50mA—VGS = –5 V —

Gate-drain leakage current 150mA—VGD = –12 V —

Drain-source leakage current 500mA—VDS = 7 V, VGS = –5 V —

Drain current —mA 450VDS = 1.5 V, VGS = 0 V —

Gate-source cut-off voltage –2.0V –3.0VDS = 3 V, IDS = 1.4 mA —

Output power —dBm

Linear gain G

Thermal resistance R

*1 Condition: f = 1.9 GHz, V

Symbol Condition Max.Unit

I

GSS

I

GDO

I

DS(off)

I

DSS

V

GS(off)

P

LIN

= 3.4 V, I

DS

(*1), P

O

(*1), P

D

th

= 12 dBm

IN

= 12 dBm %

IN

= –5 dBm

IN

= 70 mA

DSQ

dB

°C/W ——35Channel to case

Min.

21.5

45

Typ.

22.5

50Drain efficiency h

7.0

0.4

2.5

150

(Ta = 25°C)

—

—— 12.0(*1), P

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RF CHARACTERISTICS

KGF1284¡ electronic components

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Typical S Parameters

Freq(MHz)

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

500.0

600.0

700.0

800.0

900.0

0.929

0.912

0.898

0.883

0.876

0.866

0.859

0.851

0.844

0.838

0.832

0.825

0.819

0.812

0.806

0.799

0.793

0.785

0.778

0.771

0.764

0.758

0.750

0.742

0.736

0.733

–78.89

–90.54

–100.54

–109.32

–117.13

–123.86

–130.11

–135.65

–140.78

–145.60

–149.99

–154.26

–158.20

–161.99

–165.60

–169.02

–172.66

–175.81

–178.99

177.76

174.95

171.70

168.79

165.98

163.16

160.53

5.276

5.192

4.906

4.758

4.432

4.255

4.020

3.790

3.588

3.381

3.226

3.066

2.908

2.809

2.666

2.570

2.470

2.367

2.285

2.194

2.129

2.067

1.991

1.932

1.854

1.808

128.00

120.39

113.48

107.25

102.09

96.87

92.12

87.84

83.54

79.70

75.89

72.32

68.85

65.26

61.68

58.72

54.67

52.14

48.53

45.78

42.86

39.50

36.47

33.51

30.44

27.91

0.042

0.047

0.051

0.055

0.057

0.060

0.062

0.064

0.065

0.067

0.069

0.070

0.072

0.073

0.074

0.076

0.077

0.078

0.080

0.082

0.085

0.087

V

DS

= 3.4 V, V

51.45

46.56

42.16

38.55

35.18

32.38

30.00

27.73

25.74

23.56

22.15

20.26

18.89

17.33

16.01

14.72

13.41

12.04

10.71

9.42

8.56

7.12

5.91

4.43

2.92

1.82

= –1.50 V, I

GS

0.267

0.290

0.309

0.323

0.335

0.343

0.350

0.355

0.360

0.363

0.364

0.366

0.369

0.366

0.369

0.366

0.367

0.365

0.364

0.361

0.360

0.359

0.358

0.360

KGF1284¡ electronic components

= 70 mA

DS

–148.33

–151.44

–153.97

–156.56

–158.61

–160.77

–162.66

–164.65

–166.30

–168.00

–169.53

–171.09

–172.68

–174.12

–175.62

–177.03

–178.53

179.93

178.65

177.06

175.54

174.11

172.44

171.33

169.80

168.19

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Typical S Parameters

V

= 3.4 V, V

DS

= –1.50 V, I

GS

Frequency : 0.5 to 3.0 GHz

Z0 = 50 W

= 70 mA

DS

KGF1284¡ electronic components

6/7

Test Circuit and Bias Configuration for KGF1284 at 1.9 GHz

KGF1284¡ electronic components

C

V

GS

F

RFC

C

B

T

1

T

2

(1)

3

(3)

T

4

C

B

T

5

IN

C

1

(2)

C

F

V

DS

RFC

T

6

OUT

C

2

f = 1.9 GHz T

: Z0 = 80 W, E = 53 deg

1

T

: Z0 = 10 W, E = 32 deg

2

T

: Z0 = 30 W, E = 53 deg

3

C

= 1.0 pF, C2 = 2.0 pF

1

C

= 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH

C

T4: Z0 = 30 W, E = 53 deg T

: Z0 = 12 W, E = 32 deg

5

T

: Z0 = 50 W, E = 54 deg

6

7/7