Datasheet KGF1522 Datasheet (OKI)

E2Q0019-38-71

This version: Jul. 1998

Previous version: Jan. 1998

KGF1522¡ electronic components

¡ electronic components

KGF1522

Small-Signal Amplifier

GENERAL DESCRIPTION

The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that features low voltage operation, low current operation, low noise, and low distortion. The KGF1522 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high 3rd-order intercept point, even at its low operating current, the KGF1522 is ideal as a signal amplifier for L-band personal handy phones, such as digital keying cordless phones that require low intermodulation properties.

FEATURES

• Low voltage and low current operation: 3 V, 5 mA (max.)

• Specifications guaranteed to a fixed matching circuits for 3 V, 1.9 GHz

• Low noise figure: 1.3 dB (typ.) at 1.9 GHz

• High linear gain: 12.5 dB (typ.) at 1.9 GHz

• High output power: 1 dB compression point = 4.5 dBm (typ.) at 1.9 GHz

• Low distortion: 3rd-order intercept point = 17 dBm (typ.) at 1.9 GHz

• Self-bias circuit configuration with built-in source capacitor

• Package: 4PSOP

PACKAGE DIMENSIONS

1.8±0.1

0.85±0.05

+0.1

0.6

–0.05

3.0±0.2

1.5±0.15

1.9±0.1

2.8±0.15

0.4

+0.1 –0.05

1.1±0.15

0.36 0.74

+0.03

0.125

–0

(Unit: mm)

0.3 MIN

0 to 0.15

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

42 alloy

Solder plating

5 mm or more

1/8

MARKING

(4) (3)

X

XF

KGF1522¡ electronic components

CIRCUIT

(1)

G(1)

(2)

GND(4)

NUMERICAL

ALPHABETICAL

PRODUCT TYPE

D(3)

S(2)

LOT NUMBER

(1) Gate (2) Source (3) Drain (4) GND

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ABSOLUTE MAXIMUM RATINGS

KGF1522¡ electronic components

Item

Drain-source voltage

Gate-source voltage

Drain current I

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DS

V

GS

DS

P

tot

T

ch

stg

Ta = 25°C

V

Ta = 25°C 50mA —

Ta = 25°C

—

mW

°C

— 125°C

Min.

—

–3.0

—

–45

4.0

0.4

200

150

ELECTRICAL CHARACTERISTICS

(Ta = 25°C)

Item

Gate-source leakage current 30mA—VGS = –3 V —

Gate-drain leakage current 30mA—VGD = –6 V —

Drain-source leakage current 30mA—VDS = 3 V, VGS = –2 V —

Drain current —mA 15VDS = 3 V, VGS = 0 V 25

Operating current 5.0mA —(*1), P

Gate-source cut-off voltage –0.6V –1.4VDS = 3 V, IDS = 100 mA—

Transconductance —mS 20VDS = 3 V, IDS = 4 mA 25

Linear gain G

Output power —dBm

Third-order intercept point IP

Symbol Condition Max.Unit

I

GSS

I

GDO

I

DS(off)

I

DSS

V

GS(off)

g

P

I

D

m

LIN

O1

(*1)

3

= –20 dBm 3.5

IN

= –20 dBm

IN

dB

dBm ——17(*2), f2 = 1.901 GHz

Min.

—

2.0

Typ.

1.3Noise figure F (*1) dB

4.5

2.0

—11.0 12.5(*1), P

*1 Self-bias condition: V

= 3 V ± 0.3 V, V

DD

= 0 V, f = 1.9 GHz

G

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RF CHARACTERISTICS

KGF1522¡ electronic components

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KGF1522¡ electronic components

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Typical S Parameters

Freq(MHz)

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

500.0

600.0

700.0

800.0

900.0

1.006

1.002

0.999

0.995

0.991

0.985

0.980

0.974

0.967

0.960

0.952

0.944

0.934

0.925

0.915

0.904

0.893

0.880

0.868

0.856

0.843

0.828

0.815

0.801

0.788

0.773

–8.82

–10.55

–12.36

–14.14

–15.89

–17.61

–19.40

–21.12

–22.86

–24.52

–26.28

–27.92

–29.58

–31.20

–32.87

–34.49

–36.11

–37.56

–38.93

–40.42

–41.76

–43.17

–44.32

–45.55

–46.68

–47.72

1.793

1.805

1.818

1.824

1.821

1.827

1.826

1.931

1.832

1.829

1.833

1.839

1.832

1.834

1.837

1.842

1.835

1.828

1.821

1.827

1.807

1.810

1.786

1.793

1.767

177.92

173.54

169.53

166.14

162.83

159.59

156.50

153.70

150.73

148.07

144.82

142.34

139.43

136.44

133.56

130.98

128.16

125.22

122.28

119.70

116.85

113.86

111.17

108.30

105.50

102.69

0.011

0.013

0.014

0.015

0.017

0.018

0.019

0.021

0.022

0.023

0.024

0.025

0.026

0.027

0.029

0.030

0.031

0.032

0.034

0.037

0.039

0.041

76.78

75.78

74.39

75.17

75.08

76.01

73.48

73.99

73.53

72.19

74.66

74.26

74.34

75.49

77.61

79.54

84.41

84.29

85.27

86.94

90.44

94.40

97.95

101.31

105.31

108.19

= 3 V, ID = 4.24 mA

V

DD

0.906

0.903

0.900

0.897

0.895

0.892

0.889

0.886

0.884

0.880

0.877

0.875

0.869

0.866

0.863

0.858

0.855

0.852

0.846

0.843

0.838

0.835

0.830

0.826

0.825

0.823

KGF1522¡ electronic components

–7.05

–8.02

–9.13

–10.06

–11.09

–12.05

–13.13

–14.05

–15.12

–16.05

–17.02

–17.94

–18.76

–19.81

–20.67

–21.59

–22.52

–23.35

–24.15

–24.87

–25.57

–26.44

–27.12

–27.83

–28.51

–29.01

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Typical S Parameters

V

= 3 V, ID = 4.24 mA

DD

Frequency : 0.5 to 3.0 GHz

Z0 = 50 W

KGF1522¡ electronic components

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Test Circuit and Bias Configuration for KGF1522 at 1.9 GHz

KGF1522¡ electronic components

IN

C

T

1

R

G

T1: Z0 = 75 W, E = 25 deg T

: Z0 = 100 W, E = 1 deg

2

T

: Z0 = 100 W, E = 78 deg

3

T

= T8: Z0 = 100 W, E = 10 deg

4

C

= 1.40 pF, C2 = 1.35 pF

1

C

C(DC Block)

RFC = 60 nH, R

T

2

T

4

C

1

= 1000 pF, C

G

3

(1) (3)

KGF 1522

(4)

B(By-pass)

= 1000 W

T

5

T

8

T

9

C

2

T5: Z0 = 100 W, E = 95 deg T

: Z0 = 100 W, E = 24 deg

6

T

: Z0 = 75 W, E = 23 deg

7

T

: Z0 = 100 W, E = 5 deg

9

= 1000 pF, C

F(Feed through)

C

T

7

6

OUT

RFC

V

DD

C

B

F

= 1000 pF

8/8