Datasheet KGF1191 Datasheet (OKI)

E2Q0016-38-71

This version: Jul. 1998

Previous version: Jan. 1998

KGF1191¡ electronic components

¡ electronic components

KGF1191

Small-Signal Amplifier

GENERAL DESCRIPTION

The KGF1191 is a two-stage small-signal amplifier, with frequencies ranging from the UHF-band to the L-band, that features low voltage operation, low current operation, high gain, and high isolation. The KGF1191 specifications are guaranteed to a fixed matching circuit for 3 V and 850 MHz; external impedance-matching circuits are also required. Because of the high gain and high isolation at 3 V, the KGF1191 is ideal as an intermediate-stage amplifier for portable phones.

FEATURES

• Low voltage and low current: 3 V, 5 mA (max.)

• Specifications guaranteed to a fixed matching circuit for 3 V and 850 MHz

• High linear gain: 24 dB (typ.)

• High isolation: –35 dB (typ.)

• Self-bias circuit configuration with built-in source capacitor

• Package: 4PSOP

PACKAGE DIMENSIONS

1.8±0.1

0.85±0.05

+0.1

0.6

–0.05

3.0±0.2

1.5±0.15

1.9±0.1

2.8±0.15

0.4

+0.1 –0.05

1.1±0.15

0.36 0.74

+0.03

0.125

–0

(Unit: mm)

0.3 MIN

0 to 0.15

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

42 alloy

Solder plating

5 mm or more

1/13

MARKING

(4) (3)

X

XK

KGF1191¡ electronic components

CIRCUIT

(1)

IN (1)

(2)

NUMERICAL

PRODUCT TYPE

V

(2)

D1

GND (4)

LOT NUMBER

OUT (3)

(1) IN (2) V

D1

(3) OUT (4) GND

2/13

ABSOLUTE MAXIMUM RATINGS

KGF1191¡ electronic components

Item

Supply voltage

Gate voltage

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DD

V

G

P

tot

T

ch

stg

ELECTRICAL CHARACTERISTICS

Item

Operating current

Noise figure F

Linear gain G

Output power P

Isolation ISO

Symbol Condition Max.Unit

I

D

LIN

O

(*1), P

(*1)

(*1), P –30 dBm

(*1), P –13 dBm

(*1), P –20 dBm

Ta = 25°C

—

— 125°C

= –13 dBm

IN

f = 850 MHz

f = 1.5 GHz

f = 1.9 GHz

f = 850 MHz

=

IN

f = 1.5 GHz

f = 1.9 GHz

f = 850 MHz

=

IN

f = 1.5 GHz

f = 1.9 GHz

f = 850 MHz

=

IN

f = 1.5 GHz

f = 1.9 GHz

V

mW

°C

mA

dB

Min.

–3.0

–45

Min.

—

18.0

—

Typ.

—

4.0

4.5

5.0

24.0

7

0.4

200

150

(Ta = 25°C)

5.0

—

—dB — 19.0

—— 15.0

—0 3.0

—dBm — 1.5

——0

—— –35.0

—dB — –30.0

—— –30.0

*1 Self-bias condition: V

= 3±0.3 V, V

DD

= 0 V

G

3/13

RF CHARACTERISTICS

KGF1191¡ electronic components

4/13

KGF1191¡ electronic components

5/13

KGF1191¡ electronic components

6/13

KGF1191¡ electronic components

7/13

Typical S Parameters

Freq(MHz)

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

100.0

200.0

300.0

400.0

500.0

600.0

700.0

800.0

900.0

0.826

0.828

0.826

0.823

0.818

0.813

0.808

0.802

0.796

0.789

0.781

0.770

0.761

0.750

0.737

0.723

0.713

0.696

0.690

0.663

0.645

0.629

0.610

0.589

0.571

0.551

0.532

0.508

0.484

0.462

–2.48

–5.42

–8.25

–10.98

–13.69

–16.49

–19.25

–22.02

–24.75

–27.55

–30.33

–33.16

–35.86

–38.93

–41.28

–44.23

–47.11

–49.54

–52.26

–55.32

–57.91

–60.52

–62.96

–66.12

–68.72

–70.99

–73.75

–76.47

–79.35

–81.93

3.689

4.054

4.047

3.944

3.811

3.742

3.565

3.510

3.362

3.339

3.105

3.050

2.945

2.877

2.709

2.629

2.547

2.419

2.315

2.285

2.227

2.091

2.006

1.971

1.875

1.801

1.742

1.706

1.671

1.608

26.33

–2.68

–19.24

–32.66

–43.77

–53.51

–62.73

–70.82

–78.70

–85.73

–93.15

–99.64

–105.81

–111.89

–118.68

–124.25

–129.31

–135.82

–141.51

–145.96

–151.50

–157.05

–162.57

–167.19

–171.67

–176.77

178.62

173.98

169.70

164.43

0.001

0.002

0.001

0.002

0.001

0.002

0.003

0.004

0.005

0.007

0.009

0.010

0.013

0.016

0.019

0.022

0.025

0.028

0.031

0.034

0.038

0.041

0.046

KGF1191¡ electronic components

= 3 V, VG = 0 V, ID = 3.56 mA

V

DD

102.87

178.63

85.27

81.51

96.73

139.53

122.83

119.07

132.88

141.62

145.54

148.84

160.42

167.88

167.34

167.54

168.93

171.82

167.51

169.19

170.19

165.87

169.05

165.57

165.24

162.81

161.97

160.90

160.05

157.80

0.969

0.965

0.960

0.957

0.954

0.950

0.945

0.941

0.937

0.932

0.928

0.922

0.920

0.912

0.909

0.906

0.901

0.898

0.893

0.885

0.882

0.875

0.874

0.867

0.866

0.864

0.856

0.858

0.853

0.850

–2.13

–3.46

–4.74

–6.19

–7.65

–8.87

–10.31

–11.55

–12.91

–14.08

–15.36

–16.66

–17.82

–19.06

–19.98

–21.15

–22.12

–23.36

–23.98

–25.32

–26.00

–27.26

–28.24

–28.90

–30.12

–30.61

–31.85

–32.49

–33.54

–34.74

8/13

Typical S Parameters

V

= 3 V, VG = 0 V, ID = 3.56 mA

DD

Frequency : 0.1 to 3.0 GHz

Z0 = 50 W

KGF1191¡ electronic components

9/13

Typical S Parameters

Freq(MHz)

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

100.0

200.0

300.0

400.0

500.0

600.0

700.0

800.0

900.0

0.821

0.824

0.821

0.819

0.814

0.810

0.805

0.799

0.792

0.786

0.775

0.765

0.755

0.743

0.729

0.714

0.700

0.684

0.667

0.646

0.629

0.613

0.593

0.570

0.551

0.530

0.509

0.486

0.462

0.440

–2.46

–5.35

–8.20

–10.93

–13.64

–16.52

–19.23

–22.06

–24.80

–27.81

–30.47

–33.34

–36.06

–39.21

–41.61

–44.53

–47.43

–49.85

–52.61

–55.60

–58.35

–60.75

–63.14

–66.00

–68.61

–70.87

–73.62

–76.19

–78.64

–81.11

3.840

4.257

4.265

4.173

4.041

3.984

3.803

3.755

3.609

3.601

3.355

3.309

3.208

3.128

2.946

2.882

2.792

2.659

2.532

2.502

2.434

2.279

2.192

2.137

2.050

1.959

1.898

1.749

1.810

1.734

27.87

–1.07

–17.53

–30.85

–41.88

–51.44

–60.76

–68.89

–76.94

–83.94

–91.50

–98.33

–104.65

–110.68

–117.74

–123.29

–128.77

–135.06

–140.91

–145.68

–151.11

–156.84

–162.33

–167.16

–171.55

–176.76

178.81

173.93

169.62

164.47

0.001

0.002

0.001

0.002

0.003

0.004

0.005

0.006

0.007

0.009

0.010

0.013

0.015

0.018

0.019

0.023

0.025

0.027

0.030

0.033

0.036

0.040

0.044

KGF1191¡ electronic components

= 5 V, VG = 0 V, ID = 3.60 mA

V

DD

106.42

14.24

111.02

102.62

107.82

104.70

119.01

118.47

142.84

153.34

147.32

148.53

156.44

163.77

168.64

169.40

173.81

170.88

168.32

170.35

168.88

166.36

167.44

168.58

163.96

161.14

161.94

161.44

158.20

157.30

0.970

0.966

0.963

0.960

0.957

0.952

0.948

0.946

0.940

0.933

0.929

0.925

0.922

0.914

0.909

0.905

0.903

0.896

0.888

0.887

0.880

0.874

0.865

0.866

0.860

0.856

0.855

0.852

0.850

–2.14

–3.35

–4.61

–5.99

–7.42

–8.74

–10.13

–11.33

–12.76

–13.87

–15.16

–16.33

–17.45

–18.75

–19.67

–20.74

–21.84

–22.79

–23.52

–24.80

–25.51

–26.69

–27.52

–28.22

–29.33

–29.76

–30.88

–31.65

–32.56

–33.67

10/13

Typical S Parameters

V

= 5 V, VG = 0 V, ID = 3.60 mA

DD

Frequency : 0.1 to 3.0 GHz

Z0 = 50 W

KGF1191¡ electronic components

11/13

Test Circuit and Bias Configuration for KGF1191 at 850 MHz

KGF1191¡ electronic components

C

R

G

T

2

1

(1) (3)

IN

C

T

3

C

1

T1: Z0 = 130 W, E = 50 deg

: Z0 = 100 W, E = 15 deg

T

2

= T7: Z0 = 100 W, E = 6 deg

T

3

C

= 0.6 pF, C2 = 5.0 pF

1

C

C(DC Block)

RFC = 200 nH, R

= 1000 pF, C

= 1000 W

G

B

(2)

KGF 1191

(4)

B(By-pass)

C

F

V

D1

C

T

4

T4: Z0 = 100 W, E = 62 deg

: Z0 = 100 W, E = 18 deg

T

5

: Z0 = 60 W, E = 15 deg

T

6

= 1000 pF, C

F(Feed through)

Test Circuit and Bias Configuration for KGF1191 at 1.5 GHz

C

B

F

V

D1

B

5

RFC

T

6

C

T

7

C

2

= 1000 pF

C

B

C

F

OUT

V

DD

C

F

V

DD

R

G

T

IN

C

T1: Z0 = 75 W, E = 31 deg T

: Z0 = 100 W, E = 10 deg

2

T

: Z0 = 100 W, E = 65 deg

3

T

: Z0 = 100 W, E = 8 deg

4

C

= 2.0 pF, C2 = 2.5 pF, C3 = 2.7 pF

1

C

C(DC Block)

RFC = 60 nH, R

T

2

1

= 1000 pF, C

= 1000 W

G

T

3

(1) (3)

T

4

C

1

B(By-pass)

(2)

KGF

T

5

1191

(4)

T5: Z0 = 100 W, E = 61 deg T

: Z0 = 100 W, E = 16 deg

6

T

: Z0 = 75 W, E = 31 deg

7

T

= T9: Z0 = 100 W, E = 12 deg

8

= 1000 pF, C

F(Feed through)

T

6

T

8

C

2

T

7

T

9

C

3

= 1000 pF

RFC

C

OUT

C

12/13

Test Circuit and Bias Configuration for KGF1191 at 1.9 GHz

KGF1191¡ electronic components

C

R

G

T

1

T

3

2

(1) (3)

IN

C

T

4

C

1

T1: Z0 = 75 W, E = 40 deg

: Z0 = 100 W, E = 35 deg

T

2

: Z0 = 100 W, E = 88 deg

T

3

T

= T8: Z0 = 100 W, E = 12 deg

4

= 0.7 pF, C2 = 1.4 pF

C

1

C

C(DC Block)

RFC = 60 nH, R

= 1000 pF, C

= 1000

G

B

KGF 1191

B(By-pass)

W

C

F

V

D1

(2)

T

5

(4)

T5: Z0 = 100 W, E = 88 deg

: Z0 = 100 W, E = 35 deg

T

6

: Z0 = 75 W, E = 40 deg

T

7

= 1000 pF, C

C

B

T

6

T

8

C

2

F(Feed through)

RFC

7

C

= 1000 pF

C

F

V

DD

OUT

13/13