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E2Q0029-38-72
This version: Jul. 1998
Previous version: Jan. 1998
KGF1313¡ electronic components
¡ electronic components
KGF1313
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete power FET with
frequencies ranging from the UHF-band to the L-band. This device features high efficiency and
high output power. The KGF1313 specifications are guaranteed to a fixed matching circuit for
3.4 V and 1.9 GHz; external impedance-matching circuits are also required. Because of its high
efficiency, high output power (more than 27 dBm), and plastic package, the KGF1313 is ideal as
a transmitter-final-stage amplifier for personal handy phones, such as digital keying cordless
phones.
FEATURES
• Specifications guaranteed to a fixed matching circuits for 3.4 V, 1.9 GHz
• High output power: 27 dBm (min.) at 1.9 GHz
• High efficiency: 50% (typ.) at 1.9 GHz
• Low thermal resistance: 23°C/W (typ.)
• Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.5±0.1
+0.15
1.6
–0.10
+0.08
0.48
–0.05
3±0.1
0.4
+0.08
–0.05
1.5±0.1 1.5±0.1
0.4
+0.08
–0.05
0.11
±
2.5
0.2
±
0.2
±
4
±
0.05
0.39
(Unit: mm)
1.5±0.1
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
Cu
Solder plating
5 mm or more
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MARKING
KGF1313¡ electronic components
CIRCUIT
(1)
(2)
(3)
Gate(1)
P1
XX
PRODUCT TYPE
LOT NUMBER
(MUMERICAL or
ALPHABETICAL)
Drain(3)
(1) Gate
(2) Source
(3) Drain
Source(2)
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ABSOLUTE MAXIMUM RATINGS
KGF1313¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 2.0A —
Ta = Tc = 25°C
—
W
°C
— 125°C
Min.
—
–5.0
—
—
–45
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current 100mA—VGS = –5 V —
Gate-drain leakage current 500mA—VGD = –12 V —
Drain-source leakage current 1500mA—VDS = 7 V, VGS = –5 V —
Drain current —A 1.3VDS = 1.5 V, VGS = 0 V —
Gate-source cut-off voltage –2.0V –3.0VDS = 3 V, IDS = 4.0 mA —
Output power —dBm
Linear gain G
Thermal resistance R
*1 Condition: f = 1.9 GHz, V
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
P
LIN
= 3.4 V, I
DS
(*1), P
O
(*1), P
D
th
= 20 dBm
IN
= 20 dBm %
IN
= 0 dBm
IN
= 200 mA
DSQ
dB
°C/W ——15Channel to case
Min.
27.0
45
Typ.
27.5
50Drain efficiency h
7.0
0.4
4.5
150
(Ta = 25°C)
—
—— 9.5(*1), P
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RF CHARACTERISTICS
KGF1313¡ electronic components
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Typical S Parameters
Freq(MHz)
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
600.0
700.0
800.0
900.0
0.929
0.926
0.925
0.923
0.923
0.921
0.919
0.917
0.915
0.913
0.911
0.907
0.903
0.901
0.896
0.894
0.890
0.885
0.882
0.876
0.875
0.870
0.866
0.863
0.858
0.858
–144.45
–151.64
–157.14
–161.46
–165.18
–168.30
–171.07
–173.67
–175.87
–178.12
179.76
177.80
175.91
174.04
172.38
170.48
168.74
167.12
165.38
163.78
162.12
160.47
158.91
157.28
155.62
153.95
4.159
3.643
3.189
2.833
2.543
2.314
2.121
1.959
1.823
1.702
1.602
1.511
1.428
1.361
1.292
1.236
1.180
1.130
1.086
1.043
1.011
0.972
0.942
0.911
0.875
0.856
98.07
93.23
88.93
85.11
81.97
78.72
75.71
72.79
70.07
67.46
64.62
62.17
59.34
56.91
54.42
51.87
49.30
47.08
44.40
42.64
39.67
37.75
35.06
33.01
30.62
28.46
V
0.030
0.031
0.032
0.033
0.034
0.035
0.036
0.037
0.038
0.040
0.041
0.042
0.043
0.044
0.046
0.047
0.048
0.049
0.051
0.052
0.053
0.054
0.056
0.057
0.059
0.059
= 3.4 V, V
DS
29.22
27.84
26.84
26.40
26.26
25.70
25.89
25.53
25.89
25.44
25.55
25.16
24.95
24.92
24.41
24.23
23.93
23.58
23.06
22.40
21.91
21.43
20.25
19.79
18.82
18.59
= –1.43 V, I
GS
0.715
0.717
0.720
0.721
0.721
0.719
0.719
0.718
0.716
0.717
0.713
0.714
0.708
0.710
0.704
0.706
0.700
0.702
0.697
0.697
0.692
0.691
0.689
0.687
0.688
0.683
KGF1313¡ electronic components
= 200 mA
DS
–178.78
179.91
178.56
177.48
176.49
175.41
174.68
173.46
172.74
171.75
170.66
169.82
168.55
167.77
166.73
165.70
164.81
163.51
162.59
161.49
160.22
159.44
158.03
157.02
155.85
154.65
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Typical S Parameters
V
DS
= 3.4 V, V
= –1.43 V, I
GS
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
= 200 mA
DS
KGF1313¡ electronic components
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Test Circuit and Bias Configuration for KGF1313 at 1.9 GHz
KGF1313¡ electronic components
C
V
GS
F
RFC
C
B
T
1
T
T
2
(1)
3
(3)
T
4
C
B
T
5
IN
C
C
C
1
(2)
C
F
V
DS
RFC
T
6
OUT
C
C
f = 1.9 GHz
T
: Z0 = 80 W, E = 77 deg
1
T
: Z0 = 10 W, E = 18 deg
2
T
: Z0 = 30 W, E = 53 deg
3
C
= 0.8 pF
1
C
= 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 60 nH
C
T4: Z0 = 30 W, E = 53 deg
T
: Z0 = 27 W, E = 42 deg
5
T
: Z0 = 80 W, E = 43 deg
6
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