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E2Q0037-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1305T¡ electronic components
¡ electronic components
KGF1305T
Power FET (Ceramic Package Type)
GENERAL DESCRIPTION
The KGF1305T, housed in a ceramic package with integrated heat sink, is a discrete UHF-band
power FET that features high efficiency, high output power, and low current operation. The
KGF1305T specifications are guaranteed to a fixed matching circuit for 5.4 V and 850 MHz;
external impedance-matching circuits are also required. Because of its high efficiency, high
output power (more than 31.5 dBm), and low thermal resistance, the KGF1305T is ideal as a
transmitter-final-stage amplifier for personal handy phones, such as analog cellular phones.
FEATURES
• High output power: 31.5 dBm (min.)
• High efficiency: 66% (min.)
• Low thermal resistance: 12°C/W (typ.)
• Package: 3PHTP
PACKAGE DIMENSIONS
3.1±0.15
0.5±0.05
4.7±0.15
5.9 MAX
4.5±0.15
0.63±0.15
1.1±0.15
1.7±0.2
3.5±0.05
2.3±0.05
3.3±0.15
7.3±0.15
0.125±0.05
(Unit: mm)
Package material
Lead frame material
Pin treatment
plate thickness
Al20
3
Fe-Ni-Co alloy
Ni/Au plating
Au:1.0 mm or more
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MARKING
KGF1305T¡ electronic components
(1)
CIRCUIT
(2)
K1305
X X X X
(3)
PRODUCT NAME
LOT NUMBER
MONTHLY LOT NUMBER
PRODUCTION MONTH
(1-9,X,Y,Z)
PRODUCTION YEAR
(LOWEST DIGIT)
Drain(3)
(1) Gate
(2) Source
(3) Drain
Gate(1)
Source(2)
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ABSOLUTE MAXIMUM RATINGS
KGF1305T¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 2A —
Ta = Tc = 25°C
—
W
°C
— 125°C
Min.
—
–6.0
—
—
–45
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current 0.3mA —VGS = –6 V —
Gate-drain leakage current 1mA —VGD = –16 V —
Drain-source leakage current 3mA —VDS = 10 V, VGS = –6 V —
Drain current —A 1.3VDS = 1.5 V, VGS = 0 V —
Gate-source cut-off voltage –2.5V –4.0VDS = 3 V, IDS = 3 mA —
Transconductance —mS 400VDS = 3 V, IDS = 400 mA —
Output power —dBm
Thermal resistance R
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
g
m
P
O
D
th
(*1), P
(*1), P
= 20 dBm
IN
= 20 dBm %
IN
°C/W ——12Channel to case
Min.
31.5
66
Typ.
31.8
70Drain efficiency h
10
0.4
3
150
(Ta = 25°C)
—
*1 Condition: f = 850 MHz, V
= 5.4 V, I
DS
DSQ
= 150 mA
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RF CHARACTERISTICS
KGF1305T¡ electronic components
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Typical S Parameters
Freq(MHz)
500.0
600.0
700.0
800.0
900.0
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
0.904
0.898
0.898
0.892
0.893
0.888
0.888
0.885
0.884
0.883
0.878
0.880
0.873
0.874
0.871
0.867
0.866
0.863
0.856
0.860
0.847
0.854
0.841
0.850
0.838
0.844
–138.10
–146.17
–152.00
–156.82
–160.44
–163.81
–166.54
–169.05
–171.16
–173.32
–174.86
–177.08
–178.47
–179.87
178.63
177.01
175.77
174.18
172.90
171.57
170.24
169.02
167.89
166.46
165.72
163.92
5.672
4.851
4.235
3.758
3.391
3.060
2.818
2.590
2.411
2.252
2.111
1.989
1.889
1.785
1.701
1.625
1.542
1.492
1.418
1.380
1.322
1.277
1.234
1.198
1.158
1.129
98.26
92.74
88.47
84.26
80.99
77.53
74.38
71.44
68.47
65.86
63.20
60.74
58.26
55.72
53.82
50.52
49.03
46.22
44.00
42.12
38.98
37.70
35.03
32.92
31.37
28.48
0.039
0.040
0.041
0.042
0.042
0.043
0.044
0.044
0.045
0.046
0.046
0.047
0.048
0.048
0.049
0.050
0.051
0.052
0.053
0.053
0.055
0.055
0.057
0.057
0.059
0.060
24.98
22.59
21.11
19.99
19.30
18.66
18.46
18.11
18.37
17.92
18.30
17.80
18.05
18.18
17.95
18.30
18.37
18.16
18.38
18.08
18.28
18.17
18.12
18.16
17.98
17.83
V
DS
= 5.4 V, I
0.516
0.524
0.529
0.533
0.536
0.538
0.537
0.542
0.539
0.546
0.540
0.545
0.541
0.547
0.541
0.546
0.541
0.546
0.542
0.542
0.543
0.539
0.544
0.539
0.543
0.539
KGF1305T¡ electronic components
= 150 mA
DS
–166.92
–169.30
–170.80
–172.27
–173.15
–174.21
–174.79
–175.71
–176.29
–176.97
–177.67
–178.16
–178.96
–179.40
179.67
179.38
178.08
178.00
176.66
176.41
175.31
174.80
173.75
173.20
171.95
171.42
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Typical S Parameters
V
= 5.4 V, I
DS
= 150 mA
DS
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
KGF1305T¡ electronic components
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