Page 1
E2Q0026-38-72
This version: Jul. 1998
Previous version: Jan. 1998
KGF1283¡ electronic components
¡ electronic components
KGF1283
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band power FET
that features high efficiency, high output power, and high gain. The KGF1283 specifications are
guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching
circuits are also required. Because of its high efficiency, high output power (more than 26.5 dBm),
high gain, and plastic package, the KGF1283 is ideal as a transmitter-driver amplifier for personal
handy phones.
FEATURES
• High output power: 26.5 dBm (min.)
• High efficiency: 60% (typ.)
• High linear gain: 17 dB (typ.)
• Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.5±0.1
+0.15
1.6
–0.10
+0.08
0.48
–0.05
3±0.1
0.4
+0.08
–0.05
1.5±0.1 1.5±0.1
0.4
+0.08
–0.05
0.11
±
2.5
0.2
±
0.2
±
4
±
0.05
0.39
(Unit: mm)
1.5±0.1
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
Cu
Solder plating
5 mm or more
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MARKING
KGF1283¡ electronic components
CIRCUIT
(1)
(2)
(3)
Gate(1)
D1
XX
PRODUCT TYPE
LOT NUMBER
(NUMERICAL or
ALPHABETICAL)
Drain(3)
(1) Gate
(2) Source
(3) Drain
Source(2)
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ABSOLUTE MAXIMUM RATINGS
KGF1283¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max.Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 0.8A —
Ta = Tc = 25°C
—
W
°C
— 125°C
Min.
—
–6.0
—
—
–45
ELECTRICAL CHARACTERISTICS
Item
Gate-source leakage current 50mA—VGS = –6 V —
Gate-drain leakage current 150mA—VGD = –16 V —
Drain-source leakage current 500mA—VDS = 10 V, VGS = –6 V —
Drain current —mA 450VDS = 1.5 V, VGS = 0 V —
Gate-source cut-off voltage –2.0V –3.0VDS = 3 V, IDS = 1.4 mA —
Output power —dBm
Linear gain G
Thermal resistance R
*1 Condition: f = 850 MHz, V
Symbol Condition Max.Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
V
GS(off)
P
O
D
LIN
th
= 5.8 V, I
DS
(*1), P
(*1), P
= 15 dBm
IN
= 15 dBm %
IN
= –5 dBm
IN
= 70 mA
DSQ
dB
°C/W ——35Channel to case
Min.
26.5
50
Typ.
27.5
60Drain efficiency h
10
0.4
2.5
150
(Ta = 25°C)
—
—— 17.0(*1), P
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RF CHARACTERISTICS
KGF1283¡ electronic components
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Typical S Parameters
Freq(MHz)
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
600.0
700.0
800.0
900.0
0.928
0.913
0.902
0.892
0.882
0.876
0.868
0.861
0.854
0.846
0.842
0.835
0.832
0.819
0.818
0.808
0.803
0.795
0.786
0.781
0.773
0.766
0.760
0.751
0.745
0.742
–75.55
–86.65
–96.40
–105.12
–112.97
–119.78
–126.19
–131.83
–137.11
–141.95
–146.44
–150.81
–155.00
–158.72
–162.30
–166.12
–169.41
–172.93
–176.05
–179.23
177.57
174.58
171.51
168.56
165.87
162.94
6.052
5.575
5.152
4.788
4.454
4.153
3.895
3.657
3.464
3.268
3.107
2.959
2.816
2.701
2.571
2.487
2.375
2.297
2.200
2.119
2.061
1.982
1.924
1.861
1.785
1.742
128.22
121.14
114.59
108.53
103.41
98.19
93.46
89.01
84.72
80.66
76.72
73.04
69.53
65.53
62.36
58.83
55.18
52.11
48.43
45.83
42.29
39.28
36.07
32.88
30.00
27.08
0.041
0.045
0.049
0.053
0.056
0.058
0.060
0.063
0.064
0.066
0.067
0.069
0.070
0.071
0.073
0.073
0.075
0.076
0.077
0.078
0.079
0.080
0.082
0.082
0.084
0.084
V
DS
= 5.8 V, V
53.15
48.09
43.65
40.10
36.55
33.64
31.03
28.58
26.57
24.29
22.61
20.63
19.19
17.77
15.95
15.15
13.37
12.15
10.98
9.29
8.86
7.26
5.97
4.70
2.97
2.19
= –1.71 V, I
GS
0.216
0.238
0.256
0.271
0.283
0.292
0.299
0.306
0.311
0.315
0.318
0.320
0.323
0.325
0.324
0.327
0.326
0.328
0.327
0.328
0.328
0.327
0.326
0.327
0.328
0.329
KGF1283¡ electronic components
= 70 mA
DS
–140.73
–143.48
–146.18
–148.79
–150.77
–153.12
–154.81
–156.91
–158.46
–159.96
–161.51
–163.03
–164.39
–165.64
–167.18
–168.37
–169.82
–171.17
–172.30
–173.76
–175.26
–176.65
–177.97
–179.20
179.36
177.71
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Typical S Parameters
V
= 5.8 V, V
DS
= –1.71 V, I
GS
Frequency : 0.5 to 3.0 GHz
Z0 = 50 W
= 70 mA
DS
KGF1283¡ electronic components
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Page 7
Test Circuit and Bias Configuration for KGF1283 at 850 MHz
KGF1283¡ electronic components
C
V
GS
F
RFC
C
B
T
T
1
(1)
2
(3)
C
B
T
T
3
IN
C
C
C
C
1
2
(2)
C
3
C
F
V
DS
RFC
4
OUT
C
C
f = 850 MHz
T
: Z0 = 80 W, E = 7.3 deg
1
T
: Z0 = 80 W, E = 36.6 deg
2
C
= 1.0 pF, C2 = 5.0 pF, C3 = 1.0 pF
1
C
= 1000 pF, CF = 1000 pF, CB = 1000 pF, RFC = 200 nH
C
T3: Z0 = 50 W, E = 27.0 deg
T
: Z0 = 50 W, E = 18.0 deg
4
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