Page 1
E2Q0024-38-71
This version: Jul. 1998
Previous version: Jan. 1998
KGF1256B/1256 ¡ electronic components
¡ electronic components
KGF1256B/1256
Medium-Power Amplifier
GENERAL DESCRIPTION
The KGF1256B is a medium-power amplifier, with frequencies ranging from the UHF-band to
the L-band, that features high output power, low noise, and low current operation. The
KGF1256B specifications are guaranteed to a fixed matching circuit for 5 V and 850 MHz; external
impedance-matching circuits are also required. Because of the low noise and high output power
at the low operating current, the KGF1256B is ideal as a transmitter-driver amplifier for personal
handy phones.
The KGF1256 is similar to the KGF1256B in specifications and typical properties. Although
having S Parameters that are slightly different from those of the KGF1256B, the KGF1256 meets
the specifications for the KGF1256B, even with the same matching circuits.
FEATURES
• High output power: 15 dBm (min.)
• Low noise: 2.5 dB (max.)
• Low current: 40 mA (max.)
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
0.6
3.0±0.2
+0.1
–0.05
1.5±0.15
1.9±0.1
2.8±0.15
0.4
+0.1
–0.05
Note: Ask our sales department for detailed requirements of the KGF1256.
1.1±0.15
0.36 0.74
+0.03
0.125
–0
(Unit: mm)
0.3 MIN
0 to 0.15
Package material
Lead frame material
Pin treatment
Solder plate thickness
Epoxy resin
42 alloy
Solder plating
5 m m or more
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MARKING
(4) (3)
X
X D
KGF1256B/1256¡ electronic components
CIRCUIT
(1)
Gate(1)
(2)
GND(4)
ALPHABETICAL
NUMERICAL
PRODUCT TYPE
LOT
NUMBER
Drain(3)
Source(2)
(1) Gate
(2) Source
(3) Drain
(4) GND
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ABSOLUTE MAXIMUM RATINGS
KGF1256B/1256¡ electronic components
Item
Drain-source voltage
Gate-source voltage
Drain current I
Total power dissipation
Channel temperature
Storage temperature T
Symbol Condition Max. Unit
V
DS
V
GS
DS
P
tot
T
ch
stg
Ta = 25°C
Ta = 25°C
V
V
Ta = 25°C 360 mA —
Ta = 25°C
—
mW
°C
— 125 °C
Min.
—
–3.0
—
—
–45
7
0.4
300
150
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current 72
Gate-drain leakage current 360mA— V GD = –11 V —
Drain-source leakage current 720mA— V DS = 3 V, VGS = –2 V —
Drain current — mA 100 VDS = 3 V, VGS = 0 V —
Operating current 40.0 mA —
Gate-source cut-off voltage –0.5 V –1.5 VDS = 3 V, IDS = 720 m A—
Transconductance — mS 100 VDS = 3 V, IDS = 25 mA —
Noise figure 2.5 dB — (*1), f = 850 MHz —
Linear gain G
Output power P
Symbol Condition Max. Unit
I
GSS
I
GDO
I
DS(off)
I
DSS
I
V
GS(off)
g
D
m
= –3 V
V
GS
(*1), P
= 5 dBm,
IN
f = 850 MHz
m A
F
(*1), P
–20 dBm
LIN
(*2), P
–20 dBm
=
IN
=
IN
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
dB
f = 1.9 GHz
(*1), P
5 dBm
O
(*2), P
5 dBm
=
IN
=
IN
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
f = 850 MHz
f = 1.5 GHz
dBm
f = 1.9 GHz
Min.
Typ.
—
14.0
—
—
—
— 15.5
—
—
18.0
13.0
10.5
18.0
—
—
—
—
— — 12.5
— — 10.0
— 16.0 18.0
—
— — 11.5
— — 15.0
— — 13.0
— — 10.5
*1 Self-bias condition: V
*2 Self-bias condition: V
= 5± 0.25 V, V
DD
= 3 V, VG = 0 V
DD
G
= 0 V
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RF CHARACTERISTICS
KGF1256B/1256¡ electronic components
4/14
Page 5
KGF1256B/1256¡ electronic components
5/14
Page 6
KGF1256B/1256¡ electronic components
6/14
Page 7
KGF1256B/1256¡ electronic components
7/14
Page 8
KGF1256B/1256¡ electronic components
8/14
Page 9
Typical S Parameters of KGF1256B
Freq(MHz)
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
600.0
700.0
800.0
900.0
0.941
0.917
0.874
0.837
0.806
0.777
0.755
0.737
0.720
0.710
0.703
0.700
0.693
0.691
0.696
0.693
0.693
0.695
0.704
0.702
0.707
0.716
0.719
0.719
0.727
0.731
–52.03
–62.43
–71.90
–78.93
–86.02
–92.27
–98.15
–102.90
–108.50
–113.18
–117.55
–122.22
–126.28
–131.15
–135.24
–139.61
–144.32
–147.69
–152.62
–156.91
–161.26
–165.51
–170.07
–174.51
–178.84
177.05
5.226
5.315
5.111
4.827
4.537
4.238
3.966
3.730
3.496
3.307
3.145
2.968
2.830
2.672
2.559
2.432
2.310
2.205
2.092
2.006
1.898
1.816
1.732
1.646
1.561
1.492
134.33
126.90
117.12
108.84
101.30
94.02
87.45
81.35
75.71
70.03
65.11
59.63
55.27
51.43
45.44
40.78
36.30
32.02
27.18
23.36
19.63
15.30
11.81
8.05
4.42
0.51
0.051
0.052
0.050
0.048
0.051
0.052
0.052
0.057
0.061
0.066
0.077
0.082
0.093
0.104
0.115
0.131
0.146
0.159
0.174
0.194
0.210
0.223
0.243
0.253
0.269
0.283
KGF1256B/1256¡ electronic components
V
= 3 V, VG = 0 V, ID = 14.0 mA
DD
42.22
39.67
38.92
43.95
44.67
52.24
54.10
61.31
68.35
68.45
73.21
74.54
76.69
76.81
78.98
77.39
77.41
73.86
73.40
70.69
66.14
65.02
61.54
58.95
56.33
53.45
0.531
0.470
0.443
0.426
0.415
0.412
0.407
0.412
0.413
0.428
0.435
0.446
0.454
0.461
0.481
0.494
0.500
0.520
0.534
0.547
0.570
0.576
0.597
0.607
0.614
0.630
–76.18
–86.88
–94.46
–99.94
–105.46
–109.85
–114.89
–118.94
–123.38
–127.26
–131.30
–136.06
–139.61
–143.33
–147.66
–151.56
–156.02
–160.73
–164.01
–169.05
–172.95
–177.32
178.74
174.30
169.67
165.37
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Page 10
Typical S Parameters of KGF1256B
V
= 3 V, VG = 0 V, ID = 14.0 mA
DD
Frequency : 0.5 to 3.0 GHz
KGF1256B/1256¡ electronic components
Z0 = 50 W
10/14
Page 11
Typical S Parameters of KGF1256B
Freq(MHz)
1000.0
1100.0
1200.0
1300.0
1400.0
1500.0
1600.0
1700.0
1800.0
1900.0
2000.0
2100.0
2200.0
2300.0
2400.0
2500.0
2600.0
2700.0
2800.0
2900.0
3000.0
MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)
500.0
600.0
700.0
800.0
900.0
0.946
0.929
0.888
0.849
0.819
0.798
0.772
0.754
0.737
0.734
0.725
0.719
0.714
0.712
0.720
0.715
0.716
0.720
0.726
0.726
0.730
0.736
0.742
0.742
0.746
0.753
–50.39
–60.59
–69.71
–77.00
–83.83
–90.00
–95.94
–101.07
–106.32
–111.29
–115.68
–120.16
–124.65
–129.15
–133.48
–137.90
–142.76
–146.59
–151.65
–155.82
–160.35
–164.80
–169.18
–173.83
–178.20
177.40
5.163
5.261
5.067
4.808
4.532
4.249
3.991
3.747
3.514
3.326
3.174
2.997
2.860
2.700
2.585
2.467
2.331
2.229
2.108
2.017
1.907
1.825
1.734
1.648
1.566
1.494
134.98
127.92
118.20
109.79
102.16
94.87
88.30
81.91
76.24
70.45
65.44
59.74
55.18
50.32
45.17
40.55
35.99
31.65
26.60
22.47
19.12
14.31
10.62
7.08
3.43
–0.62
0.046
0.044
0.043
0.043
0.045
0.044
0.045
0.052
0.057
0.066
0.074
0.082
0.096
0.106
0.117
0.136
0.151
0.165
0.184
0.202
0.218
0.237
0.252
0.267
0.285
0.296
KGF1256B/1256¡ electronic components
V
= 5 V, VG = 0 V, ID = 15.4 mA
DD
41.95
42.66
43.75
47.27
46.06
60.51
62.09
68.42
76.71
76.64
81.63
84.47
85.33
81.95
83.83
82.48
83.14
78.59
76.66
75.03
71.03
67.89
64.26
60.87
57.36
55.75
0.531
0.469
0.439
0.426
0.420
0.414
0.407
0.414
0.424
0.437
0.442
0.451
0.460
0.475
0.490
0.509
0.517
0.539
0.551
0.563
0.583
0.595
0.611
0.623
0.632
0.648
–72.83
–82.56
–89.70
–94.94
–99.99
–104.80
–109.30
–113.96
–118.19
–122.15
–126.67
–131.24
–134.86
–138.98
–143.98
–147.62
–152.36
–156.77
–160.66
–165.98
–169.93
–174.37
–179.30
176.68
171.64
167.22
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Page 12
Typical S Parameters of KGF1256B
V
= 5 V, VG = 0 V, ID = 15.4 mA
DD
Frequency : 0.5 to 3.0 GHz
KGF1256B/1256¡ electronic components
Z0 = 50 W
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Page 13
Test Circuit and Bias Configuration for KGF1256B at 850 MHz
KGF1256B/1256¡ electronic components
C
S
RFC
(2)
(1) (3)
KGF
1256B
(4)
T
7
F(Feed through)
T
T
5
4
T
6
C
3
T4: Z0 = 75 W , E = 30 deg
T
: Z0 = 75 W , E = 30 deg
5
T
: Z0 = 100 W , E = 1 deg
7
= 1000 pF
IN
R
G
C
C
C
1
T
T
2
1
T
3
C
2
T1: Z0 = 75 W , E = 30 deg
T
: Z0 = 75 W , E = 28 deg
2
T
= T6: Z0 = 100 W , E = 5 deg
3
C
= 7.0 pF, C2 = 0.8 pF, C3 = 5.0 pF, C4 = 5.5 pF, CS = 100 pF
1
C
C(DC Block)
RFC = 200 nH, R
= 1000 pF, C
= 1000 W
G
Test Circuit and Bias Configuration for KGF1256B at 1.5 GHz
C
S
C
B
C
F
V
DD
OUT
C
C
C
4
C
F
V
DD
IN
T
T
2
1
(2)
(1) (3)
KGF
1256B
C
C
R
T
G
3
C
1
(4)
T
8
T1: Z0 = 75 W , E = 65 deg
T
: Z0 = 75 W , E = 40 deg
2
T
= T6 = T7: Z0 = 100 W , E = 8 deg
3
C
= 2.4 pF, C2 = 1.2 pF, C3 = 0.6 pF, CS = 100 pF
1
C
C(DC Block)
RFC = 60 nH, R
= 1000 pF, C
= 1000 W
G
B(By-pass)
= 1000 pF, C
T
5
4
T
6
C
T
C
2
RFC
T
T4: Z0 = 75 W , E = 50 deg
T
: Z0 = 75 W , E = 50 deg
5
T
: Z0 = 100 W , E = 1 deg
8
F(Feed through)
= 1000 pF
OUT
C
C
7
3
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Page 14
Test Circuit and Bias Configuration for KGF1256B at 1.9 GHz
KGF1256B/1256¡ electronic components
IN
C
S
T
T
2
1
(2)
(1) (3)
KGF
1256B
C
C
R
T
G
3
C
1
(4)
T
8
T1: Z0 = 75 W , E = 65 deg
T
: Z0 = 75 W , E = 40 deg
2
T
= T6 = T7: Z0 = 100 W , E = 1 deg
3
C
= 1.7 pF, C2 = 1.3 pF, C3 = 0.2 pF, CS = 100 pF
1
C
C(DC Block)
RFC = 60 nH, R
= 1000 pF, C
= 1000 W
G
B(By-pass)
= 1000 pF, C
C
T
4
T
6
C
C
B
RFC
T
5
T
C
2
T4: Z0 = 75 W , E = 50 deg
T
: Z0 = 75 W , E = 50 deg
5
T
: Z0 = 100 W , E = 1 deg
8
F(Feed through)
= 1000 pF
F
V
DD
OUT
C
C
7
3
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