Datasheet KGF1175B, KGF1175 Datasheet (OKI)

E2Q0015-38-71

This version: Jul. 1998

Previous version: Jan. 1998

KGF1175B/1175¡ electronic components

¡ electronic components

KGF1175B/1175

Small-Signal Amplifier

GENERAL DESCRIPTION

The KGF1175B is a small-signal amplifier, for frequencies ranging from the UHF-band to the L­band, that features low noise and low current operation. The KGF1175B specifications are
guaranteed to a fixed matching circuit for 5 V and 850 MHz; external impedance-matching
circuits are also required. Because of the one-input dual gate configuration, low noise, and low
operating current, the KGF1175B is ideal as a receiving-stage head amplifier for personal handy
phones.
The KGF1175 is an amplifier similar to the KGF1175B in specifications and typical properties.
Although possessing S Parameters that are slightly different from those of the KGF1175B, the
KGF1175 meets the specifications for the KGF1175B, even with the same matching circuits as
those of the KGF1175B.

FEATURES

• Low current operation: 2.5 mA (max.)

• High output power: 3 dBm (min.)

• Low noise: 2 dB (max.)

• Self-bias circuit configuration with built-in source capacitor

• Package: 4PSOP

PACKAGE DIMENSIONS

1.8±0.1

0.85±0.05

0.6

3.0±0.2

+0.1
–0.05

1.5±0.15

1.9±0.1

2.8±0.15

0.4

+0.1
–0.05

Note: Ask our sales department for detailed requirements of the KGF1175.

1.1±0.15

0.36 0.74

+0.03

0.125

–0

(Unit: mm)

0.3 MIN

0 to 0.15

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

42 alloy

Solder plating

5 mm or more

1/8

MARKING

(4) (3)

X

XR

KGF1175B/1175¡ electronic components

CIRCUIT

(1)

G(1)

(2)

NUMERICAL

NUMERICAL

PRODUCT TYPE

GND(4)

LOT
NUMBER

D(3)

S(2)

(1) Gate
(2) Source
(3) Drain
(4) GND

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ABSOLUTE MAXIMUM RATINGS

KGF1175B/1175¡ electronic components

Item

Drain-source voltage

Gate-source voltage

Drain current I

Total power dissipation

Channel temperature

Storage temperature T

Symbol Condition Max.Unit

V

DS

V

GS

DS

P

tot

T

ch

stg

Ta = 25°C

Ta = 25°C

V

V

Ta = 25°C 60mA —

Ta = 25°C

—

mW

°C

— 125°C

Min.

—

–3.0

—

—

–45

7.0

0.4

200

150

ELECTRICAL CHARACTERISTICS

(Ta = 25°C)

Item

Gate-source leakage current 12mA—VGS = –3 V —

Gate-drain leakage current 60mA—VGD = –8 V —

Drain-source leakage current 120mA—VDS = 3 V, VGS = –2.5 V —

Drain current —mA 15VDS = 3 V, VGS = 0 V —

Operating current 2.5mA —(*1), P

Gate-source cut-off voltage –1.0V –2.0VDS = 3 V, IDS = 120 mA—

Linear gain G

Output power —dBm

Third-order intercept point IP

Symbol Condition Max.Unit

I

GSS

I

GDO

I

DS(off)

I

DSS

V

GS(off)

I

D

V

m

LIN

P

(*1), P

O

3

= –20 dBm —

IN

= 3 V, IDS = 1.5 mA mS

DS

= –20 dBm

IN

= –3 dBm

IN

dB

dBm ——11(*1), f2 = 851 MHz

Min.

—

3.0

Typ.

—Noise figure F (*1) dB

—

—8—Transconductance g

2.0

—12.0 —(*1), P

*1 Self-bias condition: V

= 5.0 V±0.25 V, V

DD

= 0 V, f = 850 MHz

G

3/8

RF CHARACTERISTICS

KGF1175B/1175¡ electronic components

4/8

KGF1175B/1175¡ electronic components

5/8

Typical S Parameters of KGF1175B

Freq(MHz)

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

500.0

600.0

700.0

800.0

900.0

1.008

1.007

1.006

1.001

0.998

0.996

0.991

0.986

0.983

0.976

0.972

0.966

0.958

0.949

0.941

0.931

0.923

0.915

0.902

0.888

0.875

0.859

0.844

0.828

0.813

0.791

–11.02

–13.24

–15.37

–17.68

–19.88

–22.19

–24.38

–26.69

–28.89

–31.10

–33.47

–35.78

–38.00

–40.29

–42.69

–45.01

–47.22

–49.59

–51.85

–54.08

–56.60

–58.75

–61.15

–63.45

–65.50

–67.60

1.019

1.025

1.025

1.034

1.033

1.044

1.038

1.049

1.050

1.057

1.071

1.077

1.078

1.090

1.098

1.114

1.130

1.123

1.130

1.139

1.142

1.137

1.158

1.160

1.166

1.168

171.36

167.48

164.09

160.38

157.50

153.96

150.84

147.93

145.49

142.31

139.27

136.44

133.75

130.07

127.08

124.55

121.79

117.89

114.85

111.93

108.72

105.39

102.27

99.38

95.89

92.62

0.007

0.008

0.009

0.009

0.010

0.011

0.012

0.011

0.012

0.011

0.010

0.010

0.009

0.009

0.010

0.012

0.013

0.016

0.022

0.028

0.033

0.040

0.047

0.057

0.067

0.078

83.61

83.43

75.44

85.48

82.09

80.33

75.82

81.04

83.52

77.92

91.04

91.33

103.17

108.28

126.29

141.00

152.85

161.34

164.46

169.99

173.26

172.77

174.63

172.91

171.69

170.94

KGF1175B/1175¡ electronic components

= 5 V, ID = 1.69 mA

V

DD

0.958

0.957

0.954

0.956

0.953

0.955

0.953

0.951

0.951

0.946

0.947

0.947

0.946

0.945

0.946

0.938

0.941

0.937

0.937

0.937

0.936

0.938

0.936

0.939

0.938

0.938

–6.74

–7.82

–9.11

–10.38

–11.83

–12.91

–14.06

–15.33

–16.72

–17.78

–18.96

–20.19

–21.30

–22.67

–23.46

–24.72

–25.74

–26.78

–27.93

–28.74

–30.14

–30.84

–31.58

–32.64

–33.47

–34.37

6/8

Typical S Parameters of KGF1175B

V

Frequency : 0.5 to 3.0 GHz

= 5 V, ID = 1.69 mA

DD

Z0 = 50 W

KGF1175B/1175¡ electronic components

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Test Circuit and Bias Configuration for KGF1175B at 850 MHz

KGF1175B/1175¡ electronic components

IN

C

C

R

G

T

1

T

3

C

C

B

T1: Z0 = 110 W, E = 25 deg
T

: Z0 = 110 W, E = 27 deg

2

T

: Z0 = 65 W, E = 16 deg

3

T

: Z0 = 110 W, E = 6 deg

7

C

= 0.10 pF, C2 = 1.05 pF

1

C

C(DC Block)

= 1000 pF, C

RFC = 200 nH, R

T

2

(1) (3)

KGF
1175B

1

B(By-pass)

= 1000 W

G

T

4

(4)

T

7

T4: Z0 = 110 W, E = 7 deg
T

: Z0 = 110 W, E = 35 deg

5

T

: Z0 = 65 W, E = 16 deg

6

= 1000 pF, C

T

5

C

2

F(Feed through)

C

C

T

6

RFC

C

B

= 1000 pF

OUT

V

DD

C

F

8/8