Datasheet KGF1146 Datasheet (OKI)

E2Q0011-38-71

This version: Jul. 1998

Previous version: Jan. 1998

KGF1146¡ electronic components

¡ electronic components

KGF1146

Small-Signal Amplifier

GENERAL DESCRIPTION

The KGF1146 is a two-stage small-signal UHF-band amplifier that features low current opera­tion, high output power, and high isolation. The KGF1146 specifications are guaranteed to a fixed
matching circuit for 5 V and 850 MHz; external impedance-matching circuits are also required.
Because of the high isolation, the KGF1146 is an ideal part for a VCO-buffer amplifiers and an
intermediate-stage amplifier for personal handy phones, such as cellular phones.

FEATURES

• Low current operation: 2.5 mA (max.)

• High output power: 1.5 dBm (min.)

• High isolation: –40 dB

• Self-bias circuit configuration with built-in source capacitor

• Package: 4PSOP

PACKAGE DIMENSIONS

1.8±0.1

0.85±0.05

+0.1

0.6

–0.05

3.0±0.2

1.5±0.15

1.9±0.1

2.8±0.15

0.4

+0.1
–0.05

1.1±0.15

0.36 0.74

+0.03

0.125

–0

(Unit: mm)

0.3 MIN

0 to 0.15

Package material

Lead frame material

Pin treatment

Solder plate thickness

Epoxy resin

42 alloy

Solder plating

5 mm or more

1/7

MARKING

(4) (3)

X

XB

KGF1146¡ electronic components

(1)

(2)

ALPHABETICAL

NUMERICAL

PRODUCT TYPE

CIRCUIT

D (3)

(1)

G

(4) GND

APPLICATION EXAMPLE FOR PORTABLE PHONES

S (2)

LOT
NUMBER

100 pF

(1) Gate
(2) Source
(3) Drain
(4) GND

Antenna

Duplexer

KGF1175

Head amplifier

KGF1305 KGF1254/56

SAW
filter

Driver

amplifler

amplifier

KGF1155

GaAs device

SAW
filter

amplifier

KGL2115

KGL2115

Mixer

Receiving
system
intermediate
frequency

KGF1165

Wide-band
amplifier

Prescaler

Prescaler

Transmission system
intermediate frequency

KGF1145/46

Buffer amplifier. OscillatorPower

Divider

1
n

Divider

1
n

Buffer amplifier. Oscillator

KGF1145/46

VCO

Filter

Filter

VCO

2/7

KGF1146¡ electronic components

ABSOLUTE MAXIMUM RATINGS

Item Symbol Unit Min. Max.

Drain-source voltage

Gate-source voltage

Drain current

Total power dissipation

Channel temperature

Storage temperature

V

DS

V

GS

I

DS

Ptot

Tch

Tstg

ELECTRICAL CHARACTERISTICS

Item Symbol Condition Unit Min. Max.

Gate-source leakage current

Gate-drain leakage current

Drain-source leakage current

Drain current

Operating current

Gate-source cut-off voltage

Transconductance

Output power

Isolation

I

GSS

I

GDO

I

DS(off)

I

DSS

V

GS(off)

g

P

ISO

I

D

m

O

V

= –3 V

GS

= –6 V

V

GDO

= 3 V, VGS = –2.0 V

V

DS

= 3 V, VGS = 0 V

V

DS

(*1), P

V

V

(*1), P

(*1), P

= –10 dBm

IN

= 3 V, IDS = 120 mA

DS

= 3 V, IDS = 2.0 mA

DS

= –10 dBm

IN

= –10 dBm

IN

V

V

mA

mW

°C

°C

mA

mA

mA

mA

mA

V

mS

dBm

dB

—

–3

—

—

—

–45

—

—

—

15

—

–1.5

8

1.5

40

(Ta = 25°C)

6

0.4

60

200

150

125

(Ta = 25°C)

12

60

120

—

2.5

–0.5

—

—

—

*1 Self-bias condition: V

= 5.0 ± 0.25 V, V

DD

= 0 V, f = 850 MHz

G

3/7

RF CHARACTERISTICS

KGF1146¡ electronic components

Po vs. P

IN

10

0

Po (dBm)

5

(mA)

4

D

I

3

–10

2

–20

Output Power

VDD = 4.75 V

1

Operating Current

f = 850 MHz

–30

–40

–30 –20 –10 0

Input Power

P

IN

(dBm)

0

4/7

Typical S Parameters

Freq(MHz)

1000.0

1100.0

1200.0

1300.0

1400.0

1500.0

1600.0

1700.0

1800.0

1900.0

2000.0

2100.0

2200.0

2300.0

2400.0

2500.0

2600.0

2700.0

2800.0

2900.0

3000.0

MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22)

500.0

600.0

700.0

800.0

900.0

1.016

1.008

1.002

0.995

0.988

0.981

0.973

0.963

0.956

0.945

0.938

0.929

0.918

0.906

0.897

0.880

0.868

0.855

0.847

0.830

0.819

0.804

0.792

0.778

0.770

0.754

–13.78

–16.42

–19.14

–21.80

–24.38

–26.95

–29.64

–32.24

–34.90

–37.58

–40.39

–42.98

–46.03

–48.76

–51.64

–54.61

–57.75

–60.87

–63.86

–66.88

–69.77

–72.90

–76.11

–79.41

–82.77

–85.91

3.144

3.184

3.091

3.060

2.952

2.961

2.741

2.687

2.557

2.481

2.316

2.187

2.009

1.872

1.775

1.710

1.650

1.562

1.499

1.470

1.413

1.364

1.337

1.304

1.287

1.238

–53.83

–65.20

–76.19

–84.59 87.52

–92.88

–98.49

–105.75

–111.43

–117.29

–122.72

–129.37

–134.82

–140.24

–151.35

–155.91

–161.08

–166.40

–171.49

–176.27

179.50

176.86

174.40

169.45

164.51

159.93

155.02

0.002

0.002

0.001

0.002

0.003

0.002

0.001

0.002

0.001

0.001

0.001

0.001

0.002

0.001

0.003

0.003

0.005

0.007

0.008

0.009

0.013

0.014

0.016

0.019

0.024

0.028

91.21

72.13

88.37

75.89

69.05

51.70

89.09

31.04

96.43

138.33

124.06

–115.76

–129.25

–128.46

–121.98

–139.31

–126.58

–127.50

–139.94

–129.23

–134.15

–136.16

–140.71

–134.62

–137.56

KGF1146¡ electronic components

= 5 V, ID = 1.85 mA

V

DD

0.954

0.954

0.954

0.952

0.950

0.948

0.952

0.944

0.945

0.941

0.941

0.937

0.941

0.932

0.934

0.929

0.926

0.927

0.923

0.924

0.920

0.919

0.914

0.916

0.914

0.916

–7.09

–8.39

–9.92

–11.21

–12.84

–14.07

–15.34

–16.82

–18.09

–19.74

–20.90

–22.03

–23.52

–24.82

–26.27

–27.28

–28.67

–29.86

–30.90

–32.30

–33.42

–34.91

–35.62

–37.07

–37.84

–38.89

5/7

Typical S Parameters

V

= 5 V, ID = 1.85 mA

DD

Frequency : 0.5 to 3.0 GHz

Z0 = 50 W

KGF1146¡ electronic components

j1.0

j0.5

j2.0

j0.2

S

3.0

S

11

3.0

0.0 0.2 0.5 1.0 2.0 5.0

90

135

45

j5.0

0.5

3.0

3.0
0

S

12

0.5

S

21

180

0.5

22

5.0 4.0 3.0 2.0 1.0 0.01 0.02 0.03 0.04 0.05

0.5

6/7

Test Circuit

KGF1146¡ electronic components

L1L2L2L1

Cc

IN

W2

L1 = 20 mm
L2 = 8 mm
L3 = 10 mm

C1 and C2 are tuned to obtain maximum output power.

W1

L3

W1 = 1 mm
W2 = 3 mm
Cc = 1000 pF

C1

C1, C2: Trimmer Capacitor
(Murata Giga-Trimmer,
max. 4.5 pF)

C2

W1

L3

Cc

Substrate parameters

e

= 2.6

r

h = 1.6 mm

Cc

OUT

VdW2

7/7