Datasheet HMC278MS8G Datasheet (Hittite)

MICROWAVE CORPORATION

100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz

HMC278MS8G

FEBRUARY 2001

Features

P1dB OUTPUT POWER: + 20 dBm

1

SINGLE SUPPLY: +3V to +5V

ULTRA SMALL 8 LEAD MSOP PACKAGE

IDEAL FOR PCS/3G, MMDS, HomeRF,
& BLUETOOTH

AMPLIFIERS

SMT

V01.1200

General Description

The HMC278MS8G is a 100mW GaAs MMIC
medium power amplifier covering 1.7 to 3 GHz.
The device is packaged in a low cost, surface
mount 8 lead MSOP plastic package with an
exposed base paddle for improved RF ground
and thermal dissipation. The self-biased ampli­fier provides 21 dB of gain and +20 dBm P1dB
output power while operating from a single posi­tive supply of Vdd= +5V @ 130 mA. At Vdd =
+3V the gain is 19 dB with a P1dB of +16dBm.
With RF I/Os matched to 50Ω, external compo­nent requirements are minimal. At a height of

0.040” (1.0mm), the MSOP8 package is ideal for
low profile portable wireless devices. Use the
HMC278MS8G with the HMC309MS8 integrated
LNA/TxRx switch front-end for BLUETOOTH
Class I, HomeRF, 802.11 WLAN, and ISM 2.4
GHz radios.

Guaranteed Perf ormance,

Parameter

Frequency Range 1.7 - 3.0 2.3 - 2.5 2.3 - 2.5 GHz
Gain 15 20 25 16 21 25 15 19 23 dB
Gain Flatness ( Over Any 200 MHz BW) ± 0.7 ± 0.5 ± 0.5 dB
InputReturn Loss 5 10 7 10 7 10 dB
Output Return Loss 6 10 7 10 7 10 dB
Reverse Isolation 46 52 48 52 48 52 dB
Output Power for 1dB Compression

(P1dB)
Saturated Output Power (Psat) 16 21 19 22 15 18 dBm
Output Third Order Intercept (IP3) 26 32 29 32 28 32 dBm
Noise Figure 6 6 6 dB
Supply Voltage (Vdd) 4.75 5.0 5.25 4.75 5.0 5.25 2.75 3.0 3.25 Vdc
Supply Current (Idd) 130 165 130 165 125 140 mA

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

14 19 17 20 13 16 dBm

As a Function of Vdd, -40 to +85 deg C

Vdd= +5V Vdd= +5V Vdd= +3V

Units

1 - 36

MICROWAVE CORPORATION

100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz

HMC278MS8G

V01.1200

Broadband Gain & Return Loss
@ Vdd = +5V

25
20
15
10

5
0

-5

RESPONSE (dB)

-10

-15

-20

11.522.533.544.55

S11
S21
S22

FREQUENCY (GHz)

Gain vs. Temperature @ Vdd= +5V

24

22

20

18

16

Gain (dB)

14

12

10

1.5 2 2.5 3 3.5
FREQUENCY (GHz)

+25C
+85C

-40C

FEBRUARY 2001

P1dB vs. Vdd Bias

25
23
21
19
17
15
13

P1dB (dBm)

11

9
7
5

1.5 2 2.5 3 3.5

Vdd=+5V
Vdd=+3V

FREQUENCY (GHz)

Gain vs. Temperature @ Vdd= +3V

24

22

20

18

16

Gain (dB)

14

12

10

1.5 2 2.5 3 3.5

+25C
+85C

-40C

FREQUENCY (GHz)

1

AMPLIFIERS

SMT

Input & Output Return Loss vs
Vdd Bias

0

-5

-10

RETURN LOSS (dB)

-15

-20

1.5 2 2.5 3 3.5

S11 @ Vdd=+5V
S22 @ Vdd=+5V
S11 @ Vdd=+3V
S22 @ Vdd=+3V

FREQUENCY (GHz)

Reverse Isolation vs
Vdd Bias

0

-10

-20

-30

-40

ISOLATION (dB)

-50

-60

-70

1.5 2 2.5 3 3.5
FREQUENCY (GHz)

@ Vdd= +3V
@ Vdd= +5V

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 37

MICROWAVE CORPORATION

100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz

HMC278MS8G

FEBRUARY 2001

Power Compression @ 2.0 GHz
Vdd= +5V

1

Pout (dBm), GAIN (dB), PAE (%)

AMPLIFIERS

Psat vs. Temperature

SMT

@ Vdd= +5V

Psat (dBm)

24
22
20
18
16
14
12
10

8
6
4
2
0

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)

25
23
21
19
17
15
13
11

9
7
5

1.5 2 2.5 3 3.5
FREQUENCY (GHz)

Pout (dBm)
Gain (dB)
PAE (%)

+25C
+85C

-40C

V01.1200

Power Compression @ 2.5 GHz
Vdd= +5V

24
22
20
18
16
14
12
10

8
6
4

Pout (dBm), GAIN (dB), PAE (%)

2
0

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10
INPUT POWER (dBm)

Pout (dBm)
Gain (dB)
PAE (%)

P1dB vs. Temperature
@ Vdd= +5V

25
23
21
19
17
15
13
11

OUTPUT P1dB (dBm)

9
7
5

1.5 2 2.5 3 3.5
FREQUENCY (GHz)

+25C
+85C

-40C

Output IP3 vs. Temperature
@ Vdd= +5V

Frequency (GHz)

Temperature 2.0 2.5 3.0

-40oC 32.7 32.4 29.4
+25oC 32.5 31.9 29.1
+85oC 32.7 31.4 28.5

All levels in dBm

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 38

MICROWAVE CORPORATION

100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz

HMC278MS8G

V01.1200

Power Compression @ 2.0 GHz
Vdd= +3V

24
22
20
18
16
14
12
10

8
6
4

Pout (dBm), GAIN (dB), PAE (%)

2
0

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
INPUT POWER (dBm)

Pout (dBm)
Gain (dB)
PAE (%)

Psat vs. Temperature
@ Vdd= +3V

25
23
21
19
17
15
13

Psat (dBm)

11

9
7
5

1.5 2 2.5 3 3.5
FREQUENCY (GHz)

+25C
+85C

-40C

FEBRUARY 2001

Power Compression @ 2.5 GHz
Vdd= +3V

24
22
20
18
16
14
12
10

8
6
4

Pout (dBm), GAIN (dB), PAE (%)

2
0

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8
FREQUENCY (GHz)

Pout (dBm)
Gain (dB)
PAE (%)

P1dB vs. Temperature
@ Vdd= +3V

25
23
21
19
17
15
13
11

OUTPUT P1dB (dBm)

9
7
5

1.5 2 2.5 3 3.5
FREQUENCY (GHz)

+25C
+85C

-40C

1

AMPLIFIERS

SMT

Output IP3 vs. Temperature
@ Vdd= +3V

Frequency (GHz)

Temperature 2.0 2.5 3.0

-40oC 27.8 27.8 25.7
+25oC 27.7 27.5 25.5
+85oC 27.3 26.9 24.6

All levels in dBm

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

1 - 39

MICROWAVE CORPORATION

100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz

HMC278MS8G

FEBRUARY 2001

Schematic

1

EXPOSED
PADDLE
GROUND

AMPLIFIERS

SMT

Outline

PIN 1

VDD GND OUT GND

GND

GND IN GND

V01.1200

Absolute Maximum Ratings

Supply Voltage (Vdd) +8 Vdc
Input Power (RFi n)(Vdd = +5V) +10 dB m

65

o

o

C/W

C

o

o

C

Channel Temperature (Tc) 175
Thermal Resistance ( jc)
(Channel Backsi de)
Storage Temperature -65 to +150
Operating Temperature -55 to +85

Note: 100pF bypass capacitor to ground on Vdd
line recommended.

C

1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC.
B) LEADFRAME & PADDLE MATERIAL: COPPER ALLOY

2 . PLATING : LEAD & PADDLE- TIN SOLDER PLATE

3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005(±0.13).

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE

5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE

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MICROWAVE CORPORATION

100 mW MEDIUM POWER GaAs IC AMPLIFIER 1.7 - 3.0 GHz

HMC278MS8G

V01.1200

Recommended PCB Layout f or HMC278MS8G

FEBRUARY 2001

1

AMPLIFIERS

SMT

The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the
ground plane similar to that shown above. A sufficient number of VIA holes should be used to connect the top
and bottom ground planes. The evaluation circuit board as shown is available from Hittite upon request.

Evaluation Circuit Board Layout Design Details

Layout Technique Grounded Co-Planar Waveguide (GCPW)
Material Rogers 4350
Dielectric Thickness 0.020" (0.51 mm)
50 Ohm Line Width 0.034" (0.86 mm)
Gap to Ground Edge 0.010" (0.25 mm)
Ground VIA Hole Diameter 0.014" (0.36 mm)

Connectors SMA-F ( EF - Johnson P/N 142-0701-806)

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: [phone] Fax: [phone] Web Site: www.hittite.com

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