Page 1
y2k
new!
MICROWAVE CORPORATION
FEBRUARY 2001
HMC258
GaAs MMIC SUB-HARMONICALL Y PUMPED MIXER 14 - 21 GHz
4
MIXERS
Features
INTEGRATED LO AMPLIFIER: 0dBm DRIVE
SUB-HARMONICALLY PUMPED (x2) LO
HIGH 2LO/RF ISOLATION: > 35dB
SMALL SIZE: 0.8mm x 1.1mm
General Description
The HMC258 chip is a compact sub-harmonically pumped (x2) single ended MMIC mixer
with an integrated LO amplifier which can be
used as an upconverter or downconverter. The
chip utilizes a GaAs MESFET technology that
results in a small overall chip area of 0.9mm
The 2LO to RF isolation is excellent eliminating
the need for additional filtering. The LO amplifier
is a single bias (+5V) two stage design with only
0dBm drive requirement. A less stringent oscillator design is made possible by the low LO
drive and sub-harmonic nature of the chip. This
mixer chip is designed to be used in microwave
point to point radios, VSAT and other SATCOM
applications. All data is with the chip in a 50 ohm
test fixture connected via 0.025 mm (1 mil)
diameter wire bonds of minimal length <0.31
mm (<12 mils).
2
.
Guaranteed Performance, LO Drive= 0 dBm, - 55 to + 85 deg C
DIE
Parameter
Min. Typ. Max. Min. Typ. Max.
Frequency Range, RF 14 - 21 17 - 20 GHz
Frequency Range LO 7 - 10.5 8.5 - 10 GHz
Frequency Range, IF DC - 3 DC - 3 GHz
Conversion Loss 10 13.5 9.5 12 dB
Noise Fi gure (SSB) 10 13.5 9.5 12 dB
2LO to RF Isolation 30 40 34 40 dB
2LO to IF Isolation 30 40 ~ 50 38 40 ~ 50 dB
IP3 (Input) 0 7 0 7 dBm
1 dB Compression (Input) -5 0 -4 1 dBm
Local Oscillator Drive Level -4 0 +6 -4 0 +6 dBm
Supply Voltage (Vdd) 4.5 5.0 5.5 4.5 5.0 5.5 Vdc
Supply Current (Idd) ( Vdd = +5.0 Vdc) 50 65 50 65 mA
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 100
IF = 1 GHz
Vdd =+5.0V
IF = 1 GHz
Vdd = +5.0V
Units
Page 2
MICROWAVE CORPORATION
HMC258 SUB-HARMONICALLY PUMPED MIXER 14 - 21 GHz
new!
HMC258
FEBRUARY 2001
y2k
Conversion Gain vs. Temperature
@ LO = 0 dBm
0
-55 C
-5
-10
-15
CONVERSION GAIN (dB)
-20
-25
13 14 15 16 17 18 19 20 21 22 23
RF FREQUENCY (GHz)
+85 C
+25 C
Conversion Gain vs. LO Drive
0
-5
-10
-15
CONVERSION GAIN (dB)
-20
-25
13 14 15 16 17 18 19 20 21 22 23
+2 dBm
-4 dBm
RF FREQUENCY (GHz)
0dBm
+4 dBm
-2 dBm
Isolation @ LO = 0 dBm
0
-10
LO/IF
-20
-30
-40
ISOLATION (dB)
-50
-60
13 14 15 16 17 18 19 20 21 22 23
RF/IF
2LO/IF
RF FREQUENCY (GHz)
LO/RF
2LO/RF
Return Loss @ LO = 0 dBm
0
-5
-10
-15
-20
-25
RETURN LOSS (dB)
-30
-35
-40
LO
IF
0 2 4 6 8 10121416182022
FREQUENCY (GHz)
4
MIXERS
RF
DIE
IF Bandwidth @ LO = 0 dBm
Upconverter Performance
Conversion Gain vs. LO Drive
0
-5
-10
-15
-20
IF CONVERSION GAIN (dB)
-25
0123456
IF FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
0
-5
-10
-15
CONVERSION GAIN (dB)
-20
-25
13 14 15 16 17 18 19 20 21 22 23
+2 dBm
-4 dBm
RF FREQUENCY (GHz)
0dBm
-2 dBm
+4 dBm
4 - 101
Page 3
y2k
new!
4
MIXERS
DIE
MICROWAVE CORPORATION
HMC258 SUB-HARMONICALLY PUMPED MIXER 14 - 21 GHz
FEBRUARY 2001
Input IP3 vs. LO Drive
20
15
10
5
0
-2 dBm
-5
THIRD ORDER INTERCEPT (dBm)
-10
13 14 15 16 17 18 19 20 21 22 23
Input IP2 vs. LO Drive
60
55
50
45
40
35
30
-2 dBm
25
SECOND ORDER INTERCEPT (dBm)
20
13 14 15 16 17 18 19 20 21 22 23
MXN Spurious Outputs
@ LO Drive = 0 dBm
mRF
-2 -44
RF = 18 GHz @ -10 dBm
LO = 8.5 GHz @ 0 dBm
All values i n dBc below IF power level
±5 ±4 ±3 ±2 ±1 0
-3
-1 -57 -18 -52
0-9-26+20
1X-46-2
2 -52 -30 -49
3-56
+2 dBm
0dBm
RF FREQUENCY (GHz)
+2 dBm
0dBm
RF FREQUENCY (GHz)
nLO
HMC258
Input IP3 vs. Temperature
@ LO = 0 dBm
20
15
10
5
0
+85 C
-5
THIRD ORDER INTERCEPT (dBm)
-10
13 14 15 16 17 18 19 20 21 22 23
Input IP2 vs. Temperature
@ LO = 0 dBm
60
55
50
45
40
35
30
25
SECOND ORDER INTERCEPT (dBm)
20
+85 C
13 14 15 16 17 18 19 20 21 22 23
P1dB vs. Temperature
@ LO = 0 dBm
6
4
2
0
P1dB (dBm)
-2
-4
13 14 15 16 17 18 19 20 21 22 23
+25C
+85 C
-55 C
+25 C
RF FREQUENCY (GHz)
-55 C
+25 C
RF FREQUENCY (GHz)
-55 C
RF FREQUENCY (GHz)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 102
Page 4
MICROWAVE CORPORATION
HMC258 SUB-HARMONICALLY PUMPED MIXER 14 - 21 GHz
new!
HMC258
FEBRUARY 2001
y2k
Schematic
RF
(14 - 21 GHz)
Vdd
(+5V)
IF
(DC - 3 GHz)
LO In
Absolute Maximum Ratings
RF / IF Input (V dd= +5V) +13 dBm
LO Drive (Vdd= +5V) +13 dBm
Vdd +10 Vdc
Storage Temperature -65 to +150 deg C
Operating Temperature -55 to +85 deg C
(7.0 ~10.5 GHz
@0 dBm TYP.)
NOTE: A 100pF single layer chip bypass capacitor is recommended
on the Vdd port no further than 0.762 mm (30mils) from the HMC258
Outline Drawing ( See Die Handling, Mounting, Bonding Note Page 4-104)
RF
Hittite
BACKSIDE
IS GROUND
1.12
(0.044)
0.89
(0.035)
0.61
(0.024)
(0 006)
(0.005)
0.10
(0.004
0.15
013
)
IF
Vdd
0.31
(0.012
(0.018)
)
0.46
0.81
(0.032
ALL DIMENSION IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BOND PAD SPACING, CTR-CTR: 0.150 (0.006)
BACKSIDE METALLIZATION : GOLD
BOND PAD METALLIZATION : GOLD
LO
)
4
MIXERS
DIE
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 103
Page 5
y2k
new!
4
HMC258
MICROWAVE CORPORATION
HMC258 SUB-HARMONICALLY PUMPED MIXER 14 - 21 GHz
FEBRUARY 2001
MIC Assembly Techniques for HMC258
MIXERS
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically
or with conductive epoxy (see HMC general Handling, Mounting,
Bonding Note).
DIE
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick
alumina thin film substrates are recommended for bringing RF to
and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin
film substrates must be used, the die should be raised 0.150mm
(6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the
0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum
heat spreader (moly-tab) which is then attached to the ground
plane (Figure 2).
Microstrip substrates should brought as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate
spacing is 0.076mm (3 mils).
An RF bypass capacitor should be used on the Vdd input. A 100 pF single layer capacitor (mounted eutectically or by
conductive epoxy) placed no further than 0.762mm (30 Mils) from the chip is recommended. The photo in figure 3 shows
a typical assembly for the HMC258 MMIC chip.
RF
IF
Figure 3: Typical HMC258 Assembly
LO
Vdd
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 104
Page 6
HMC258
MICROWAVE CORPORATION
HMC258 SUB-HARMONICALLY PUMPED MIXER 14 - 21 GHz
FEBRUARY 2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
y2k
new!
4
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.31 mm (12 mils).
MIXERS
DIE
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
4 - 105
Loading...