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MICROWAVE CORPORATION
FEBRUARY 2001
HMC256
GaAs MMIC I/Q MIXER 5.9 - 12 GHz
4
MIXERS
DIE
Features
HIGH IMAGE REJECTION: > 30dB
INPUT IP3: +18 dBm
SMALL SIZE: 1.3mm x 1.6mm
General Description
The HMC256 chip is a compact, 2.08 mm2, I/Q
Mixer MMIC which can be used as a Image
Reject Mixer (IRM), SSB upconverter or
downconverter. The chip utilizes two standard
Hittite double-balanced mixer cells and a Lange
Coupler realized in GaAs MESFET technology.
This IRM MMIC is designed to be used in
microwave point-to- point radios, VSAT, and
other SATCOM applications. All data is with the
chip in a 50 ohm test fixture connected via 0.025
mm (1 mil) diameter wire bonds of minimal
length <0.51 mm (<20 mils). A low frequency
quadrature hybrid was used to interface the
MMIC IF ports to a 120 MHz IF USB output.
This provides an example of the I/Q Mixer in an
IRM application. The IF may be used from 1 to
1500 MHz. This I/Q Mixer is a more reliable,
much smaller replacement to hybrid drop-in
style I/Q Mixer assemblies.
Guaranteed Perf ormance, As an IRM (see pg. 4-34), -55 to + 85 deg C
Parameter
Frequency Range, RF 5.9 - 12 7.1 - 11.7 GHz
Frequency Range LO 5.7 - 12 6.9 - 11.7 GHz
Frequency Range, IF DC - 1.5 DC - 1.5 GHz
Conversion Loss 8 10.5 8 10.5 dB
Noise Figure (SSB) 8 10.5 8 10.5 dB
Image Rejection (IR) 24 32 20 30 dB
LO to RF Isolation 22 30 22 30 dB
LO to IF Isolation 27 35 27 35 dB
RF to IF Isolation 24 30 24 30 dB
IP3 (Input) +14 +18 +13 +17 dBm
1 dB Compression (Input) +5 +5 dBm
Local Oscillator Drive Level +12 +18 +20 +12 +15 +20 dBm
IF=70~200MHz
LO = +18 dBm
Min. Typ. Max. Min. Typ. Max.
IF = 70 ~ 200 MHz
LO = +15 dBm
Units
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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MICROWAVE CORPORATION
HMC256 I/Q MIXER 5.9 - 12 GHz
new!
HMC256
FEBRUARY 2001
y2k
Conversion Gain to Desired Sideband
vs. Temperature, @ LO = +15dBm,
IF = 120 MHz USB.
0
-55C
-5
-10
-15
CONVERSION GAIN(dB)
+25C
-20
5678910111213
FREQUENCY (GHz)
+85C
Image Rejection vs Temperature
LO = +15 dBm, IF = 120 MHz USB
50
40
+85C
Conversion Gain to Desired Sideband
vs. LO Drive, IF = 120 MHz USB
0
+18dBm
-5
-10
+14dBm
-15
CONVERSION GAIN (dB)
-20
5678910111213
+16dBm
RF FREQUENCY (GHz)
+12dBm
Image Rejection vs LO Drive,
IF = 120 MHz USB
50
+18dBm
40
+16dBm
4
MIXERS
DIE
30
20
IMAGE REJECTION (dB)
10
0
5678910111213
-55C
+25C
RF FREQUENCY (GHz)
30
20
IMAGE REJECTION (dB)
10
+14dBm
0
5678910111213
RF FREQUENCY (GHz)
+12dBm
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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MICROWAVE CORPORATION
HMC256 I/Q MIXER 5.9 - 12 GHz
FEBRUARY 2001
Return Loss @ LO = +15 dBm
0
-5
-10
-15
-20
-25
RETURN LOSS (dB)
-30
-35
-40
5678910111213
LO
RF
FREQUENCY (GHz)
HMC256
Isolations @ LO = +15 dBm
0
-10
-20
-30
-40
ISOLATION (dB)
-50
-60
RF/IF
LO/RF
LO/IF
5678910111213
FREQUENCY (GHz)
MIXERS
IF Bandwidth @ LO = +15 dBm
0
DIE
-5
-10
-15
-20
RETURN LOSS (dB)
IF CONVERSION GAIN &
-25
-30
0 0.5 1 1.5 2 2.5 3
IF Conversion Gain
Return Loss
FREQUENCY (GHz)
Input IP3 vs. LO Drive,
IF = 120 MHz USB
25
+18dBm
20
15
+14dBm
THIRD ORDER INTERCEPT (dBm)
10
56789
FREQUENCY (GHz)
+16dBm
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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MICROWAVE CORPORATION
HMC256 I/Q MIXER 5.9 - 12 GHz
new!
HMC256
FEBRUARY 2001
y2k
Schematic
Absolute Maximum Ratings
IF1
LO
50
(I)
RF
(Q)
RF / IF Input +13 dBm
LODrive +13 dBm
Storage Temperature -65 to +150 deg C
Operating Temperature -55 to +85 deg C
IF2
Outline Drawing ( See Die Handling, Mounting, Bonding Note Page 4-98)
1.30
(0.0510)
(0.0230)
1.176
(0.0463)
0.58
0.127
(0.0050)
RF
0.28 (0.0109)
LO
Hittite
IF2
0.43
(0.0168)
0.88
(0.0345)
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MIXERS
DIE
IF1
Backside is
Ground
0.127 (0.0050)
ALL DIMENSION IN MILLIMETERS (INCHES)
ALL TOLERANCES ARE ±0.025 (0.001)
DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND
BOND PADS ARE 0.100 (0.004) SQUARE
BOND PAD SPACING, CTR-CTR: 0.150 (0.006)
BACKSIDE METALLIZATION : GOLD
BOND PAD METALLIZATION : GOLD
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
1.47 (0.0581)
1.60 (0.0631)
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HMC256
MICROWAVE CORPORATION
HMC256 I/Q MIXER 5.9 - 12 GHz
FEBRUARY 2001
Image Reject Mixer Suggested Application Circuit
Below in Figure1 is a photo and in Figure 2 a schematic of the HMC256 image reject mixer MMIC die
connected to a quadrature hybrid (120 MHz) manufactured by Merrimac Industries West Caldwell, NJ (P/N
QHZ-2A-120).
Data presented for the HMC256 MMIC IRM was obtained using the circuit described here. Please note that
the image rejection and isolation performance is dependent on the selection of the low frequency hybrid.
The performance specification of the low frequency quadrature hybrid as well as the phase balance and
VSWR of the interface circuit to the HMC256 MMIC will effect the overall IRM performance.
LO
USB
MIXERS
RF
DIE
Figure 1: Complete MIC IRM Assembly
LO
50
IF2
IF1
HMC256
IF
IF2
4
RF
12
IF1
QHZ-2A-120
LSB
3
USB
LSB
Figure 2: Schematic of HMC256 IRM MMIC Connected to the Quadrature Hybrid
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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HMC256
MICROWAVE CORPORATION
HMC256 I/Q MIXER 5.9 - 12 GHz
FEBRUARY 2001
Handling Precautions
Follow these precautions to avoid permanent damage.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid
cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes ( see page 8 - 2 ).
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and
bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
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Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically
conductive epoxy. The mounting surface should be clean and flat.
Eutectic Die Attach:
A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be
290 deg. C.
DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around
the perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal
stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to
22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.
Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be
as short as possible <0.51 mm (20 mils).
MIXERS
DIE
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com
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