4 dB LSB GaAs IC 3 - BIT DIGITAL ATTENUATOR 0.75 - 2.0 GHz
2
ATTENUATORS
SMT
FEBRUARY 2001
Features
4 dB LSB STEPS to 28 dB
SINGLE POSITIVE CONTROL PER BIT
+/- 0.5 dB TYPICAL BIT ERROR
PIN - FOR - PIN REPLACEMENT TO
AA100-59 DIGITAL ATTENUATOR
V01.0700
General Description
The HMC230MS8 is a broadband 3 - bit positive control GaAs IC digital attenuator in an 8
lead MSOP surface mount plastic package.
Covering 0.75 to 2 GHz the insertion loss is
typically less than 2 dB. The attenuator bit
values are 4 (LSB), 8, and 16 dB for a total
attenuation of 28 dB. Accuracy is excellent at
± 0.5 dB typical with an IIP3 of up to +48 dBm.
Three bit control voltage inputs, toggled between 0 and +3 to +5 volts, are used to select
each attenuation state at less than 50 uA each.
A single Vdd bias of +3 to +5 volts applied
through an external 5KΩ resistor is required.
The HMC230MS8 is ideal for cellular, PCS,
ISM, MMDS, and WLL handset & basestation
applications.
Guaranteed Performance
With Vdd =+3V to +5V & Vctl = 0/Vdd (Unless Otherwise Stated), -40 to +85 deg C
ParameterFrequencyMin.Typ.Max.Units
Insertion Loss
Attenuation Range0.75 - 2.0 GHz28dB
Return Loss (RF1 & RF2, AllAtten.States)
Attenuation Accuracy: (Referenced to Insertion Loss)
4, 8, 12, 16, 20 dB States
24, 28 dB States
All Attenuation States
InputPower for 0.1 dB Compression5V3V0.75 - 2.0 GHz20
Input Third Order Intercept Point
(Two-Tone Input Power = 0dBm Each)
Switching Character istics
tRISE, tFALL (10/90%RF)
tON/tOFF (50% CTL to 10/90% RF)
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343Fax: 978-250-3373Web Site: www.hittite.com
4 dB LSB GaAs IC 3 - BIT DIGITAL ATTENUATOR 0.75 - 2.0 GHz
HMC230MS8
V01.0700
Insertion Loss
0
-0.5
-1
-1.5
-2
INSERTION LOSS (dB)
-2.5
-3
0.7511.251.51.752
+85 C
-40 C
FREQUENCY (GHz)
Normalized Attenuation
(Only Major States are Shown)
0
-5
-10
-15
+25 C
4dB
8dB
16 dB
FEBRUARY 2001
Return Loss RF1, RF2
(
Only Major States are Shown)
0
-5
16, 28 dB
-10
-15
RETURN LOSS(dB)
-20
-25
0.7511.251.51.752
4dB
8dB
FREQUENCY (GHz)
Bit Error vs Attenuation State
3
2
1
2
ATTENUATORS
SMT
0.9 GHz
-20
-25
-30
NORMALIZEDINSERTIONLOSS(dB)
-35
0.7511.251.51.752
FREQUENCY (GHz)
28 dB
0
BIT ERROR (dB)
-1
-2
481216202428
ATTENUATIONSTATE(dB)
1.9 GHz
Note: All Data Typical Over Voltage (+3V to +5V) & Temperature (-40 to +85 deg.C).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343Fax: 978-250-3373Web Site: www.hittite.com
2 - 39
Page 3
HMC230MS8
MICROWAVE CORPORATION
4 dB LSB GaAs IC 3 - BIT DIGITAL ATTENUATOR 0.75 - 2.0 GHz
2
ATTENUATORS
SMT
FEBRUARY 2001
Bit Error vs Frequency
Only Major States are Shown)
(
4
3
2
1
0
-1
BIT ERROR (dB)
8dB
-2
-3
-4
0.7511.251.51.752
4dB
FREQUENCY (GHz)
Functional Diagram/
Application Circuit
Vdd
Pin Number
5 k W
R1
100 pF
RF1
V2
GND
C1
1
2
3
4 dB
8 dB
16 dB
28 dB
V01.0700
Relative Phase vs Frequency
(
Only Major States are Shown)
60
16 dB
40
20
0
-20
RELATIVE PHASE (deg.)
-40
-60
0.7511.251.51.752
FREQUENCY (GHz)
28 dB
8dB
4dB
T ruth Table
Control Voltage InputAttenuation
V1
16 dBV24dBV38dB
HighHighHighReference
HighLowHigh4 dB
GND
8
V3
7
GND
6
HighHighLow8 dB
LowHighHigh16 dB
LowLowLow28 dB
Anycombinationof above states will
provide an attenuation approximately
equalto the sum of the bits selected.
Setting
RF1 -RF2
I.L.
Max Atten.
V1
DC blocking capacitors C1 & C2 are required on RF1 & RF2. Choose C1 = C2
= 100 ~ 300 pF to allow lowest customer specific frequency to pass with
minimal loss. R1 = 5KΩ is required to supply voltage to the circuit through
either PIN 1 or PIN 5.
4
16 dB
100 pF
5
RF2
C2
Control & Bias
V oltages
State Bias Condition
Low0 to +0 .2V@ 20 uA Ma x
HighVdd ± 0.2 V @ 50 uA Typ
Note: Vdd = +3V to +5V± 0.2V
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343Fax: 978-250-3373Web Site: www.hittite.com
2 - 40
Page 4
HMC230MS8
MICROWAVE CORPORATION
4 dB LSB GaAs IC 3 - BIT DIGITAL ATTENUATOR 0.75 - 2.0 GHz
V01.0700
Absolute Maximum Ratings
Control Voltage (V1, V2, V3)Vdd + 0.5 Vdc
Bias Voltage(Vdd)+8.0 Vdc
StorageTemperature-65to+150degC
Operating Temperature-40 to +85deg C
RF Input Power (0.75 - 2 GHz)+26 dBm
Outline
FEBRUARY 2001
2
ATTENUATORS
SMT
1. MATERIAL:
A) PACKAGE BODY - LOW STRESS INJECTION-MOLDED PLASTIC.
B) LEADFRAME MATERIAL: COPPER ALLOY
2 . PLATING : LEAD - TIN SOLDER PLATE
3. DIMENSIONS ARE IN INCHES (MILLIMETERS).
UNLESS OTHERWISE SPECIFIED ALL TOL. ARE ±0.005(±0.13).
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343Fax: 978-250-3373Web Site: www.hittite.com
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15 MM PER SIDE
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25 MM PER SIDE
2 - 41
Page 5
MICROWAVE CORPORATION
4 dB LSB GaAs IC 3 - BIT DIGITAL ATTENUATOR 0.75 - 2.0 GHz
HMC230MS8
2
ATTENUATORS
SMT
FEBRUARY 2001
Evaluation Circuit Board
V01.0700
* R2 = R3 = R4 = 100 Ω .
These resistors are optional and
may be used to enhance
decoupling of the RF path from
the control inputs.
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have
50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to
that shown above. A sufficient number of VIA holes should be used to connect the top and bottom ground planes.
The evaluation circuit board as shown is available from Hittite upon request.
Evaluation Circuit Board Layout Design Details
ItemDescription
J1 - J2PC Mount SMA Connector
J3 - J6DC Pin
R15k Ω Resistor, 0402 Chip
R2, R3, R4100 Ω Resistor, 0402 Chip
C1, C20402 Chip Capacitor, Select for
Lowest Frequency of Operation
U1HMC230MS8 Digital Attenuator
PCB*103153 Evaluation PCB 1.25" x 1.5"
*Circuit Board Material: Rogers 4350
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343Fax: 978-250-3373Web Site: www.hittite.com
2 - 42
Page 6
MICROWAVE CORPORATION
4 dB LSB GaAs IC 3 - BIT DIGITAL ATTENUATOR 0.75 - 2.0 GHz
HMC230MS8
V01.0700
NOTES:
FEBRUARY 2001
2
ATTENUATORS
SMT
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343Fax: 978-250-3373Web Site: www.hittite.com
2 - 43
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