Datasheet 2SK2373 Datasheet (HIT)

2SK2373

Silicon N-Channel MOS FET

Application

Low frequency power switching

Features

• Low on-resistance

• Small package

• Low drive current

• 4 V gate drive device can be driven from 5 V source.

• Suitable for low signal load switch

ADE-208-268

1st. Edition

Outline

MPAK

G

3

1

2

D

1. Source

2. Gate

3. Drain

S

2SK2373

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body to drain diode reverse drain current I
Channel dissipation Pch*

DSS

GSS

D

D(pulse)

DR

1

*

2

Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %

2. Marking is “ZE–”.

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage
Gate to source breakdown

V

(BR)GSS

voltage
Gate to source leak current I
Zero gate voltage drain current I
Gate to source cutoff voltage V
Static drain to source on state

R

GSS

DSS

GS(off)

DS(on)

resistance

Input capacitance Ciss — 17.8 — pF VDS = 10 V
Output capacitance Coss — 25.4 — pF VGS = 0
Reverse transfer capacitance Crss — 3.7 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

d(on)

r

d(off)

f

Note 1. Pulse Test

30 — — V ID = 100 µA, VGS = 0

±20 — — V IG = ±100 µA, VDS = 0

——±2µAVGS = ±16 V, VDS = 0
——1 µAVDS = 30 V, VGS = 0

1.0 — 2.0 V ID = 10 µA, VDS = 5 V
— 1.4 2.5 Ω ID = 20 mA

— 1.0 1.4 Ω ID = 10 mA

— 50 — ns ID = 0.1 A
— 125 — ns VGS = 10 V
— 660 — ns RL = 100 Ω
— 400 — ns PW = 2 µs

30 V
±20 V

0.2 A

0.4 A

0.2 A
150 mW

= 4 V*

= 10 V*

1

1

V

GS

V

GS

2

2SK2373

Maximum Channel Dissipation Curve

200

150

100

50

Channel Power Dissipation Pch (mW)

0

50 100 150 200

Ambient Temperature Ta (°C)

Typical Output Characteristics

2.0
Pulse Test

1.6

D

5 V

4.5 V

1.2

4 V

0.8

3.5 V

Drain Current I (A)

0.4

V = 2.5 V

GS

3 V

Maximum Safe Operation Area

1

0.3

D

0.1

DC Operation

0.03
Operation in

0.01

Drain Current I (A)

0.003

this area is
limited by R

DS(on)

Ta = 25 °C

0.001

1 shot pulse

0.1 0.3

1

Drain to Source Voltage V (V)

Typical Transfer Characteristics

0.5

V = 10 V

0.4

D

0.3

DS

75 °C

0.2

Drain Current I (A)

0.1

25 °C

1 ms

PW =

10 ms

3 10 30 100

DS

Ta = –25 °C

0

2

46810

Drain to Source Voltage V (V)

DS

0

12345

Gate to Source Voltage V (V)

GS

3

2SK2373

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

0.5

0.4

DS(on)

V (V)

0.3

0.2

0.1

Drain to Source Saturation Voltage

0

4 8 12 16 20

I = 0.05 A

D

Gate to Source Voltage V (V)

Forward Transfer Admittance vs.

1

0.5

Drain Current

Ta = –25 °C

0.2 A

0.1 A

GS

Static Drain to Source on State Resistance

vs. Drain Current

10

Ω

DS(on)

R ( )

5

2

1

Ta = 25 °C
Pulse Test

V = 4 V

GS

10 V

0.5

0.2

Drain to Source On State Resistance

0.1

0.01 0.02 0.05 0.1 0.2 0.5 1
Drain Current I (A)

D

Typical Capacitance vs.
Drain to Source Voltage

100

30

Coss

0.2
75 °C

0.1

25 °C

0.05

0.02

V = 10 V

DS

Pulse Test

Forward Transfer Admittance |yfs| (S)

0.01

0.01 0.02 0.05 0.1 0.2 0.5 1
Drain Current I (A)

D

10

3

1

Capacitance C (pF)

0.3

0.1
0

10 20 30 40 50

Drain to Source Voltage V (V)

Ciss

Crss

V = 0

GS

f = 1 MHz

DS

4

0.5

0.4

DR

2SK2373

Reverse Drain Current vs.

Source to Drain Voltage

Pulse Test

0.3

0.2

0.1

Reverse Drain Current I (A)

0

Source to Drain Voltage V (V)

10 V

V = 0

5 V

0.4 0.8 1.2 1.6 2.0

GS

SD

5

Unit: mm

3 – 0.4

+ 0.10
– 0.05

0.95

1.9 ± 0.2

2.95 ± 0.2

0.95

0.65

+ 0.2

1.5 ± 0.15

0.65

0.3

+ 0.2

– 0.6

2.8

– 0.1

1.1

+ 0.10

0.16

– 0.06

0 – 0.1

Hitachi Code
JEDEC
EIAJ
Weight

(reference value)

MPAK
—
Conforms

0.011 g

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