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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2371/2SK2372
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2371/2SK2372 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2367: RDS(ON) = 0.25 Ω (VGS = 13 V, ID = 10 A)
2SK2368: RDS(ON) = 0.27 Ω (VGS = 13 V, ID = 10 A)
• Low C
iss Ciss = 3600 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) I
Drain Current (pulse)* ID(pulse) ±100 A
Total Power Dissipation (TC = 25 °C) PT1 160 W
Total Power Dissipation (T
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 ~ +150 °C
Single Avalanche Current** I
Single Avalanche Energy** EAS 446 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device is actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
(2SK2371/2SK2372)
a = 25 °C) PT2 3.0 W
VDSS 450/500 V
D(DC) ±25 A
AS 25 A
PACKAGE DIMENSIONS
(in millimeters)
MP-88
4
3
1.0 ± 0.2
Source
3.2 ± 0.2
4.5 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Drain
Body
Diode
15.7 MAX.
6.0 1.0
20.0 ± 0.2
12
19 MIN.
3.0 ± 0.2
2.2 ± 0.2
5.45 5.45
Gate
4.7 MAX.
1.5
7.0
2.8 ± 0.10.6 ± 0.1
Document No. TC-2505
(O.D. No. TC-8064
Date Published January 1995 P
Printed in Japan
©
1995
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2SK2371/2SK2372
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITION
Drain to Source On-Resistance RDS(on) 0.2 0.25 Ω VGS = 10 V 2SK2371
0.22 0.27 ID = 13 A 2SK2372
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 V VDS = 10 V, ID = 1 mA
Forward Transfer Admittance yfs 8.0 S VDS = 10 V, ID = 13 A
Drain Leakage Current IDSS 100
Gate to Source Leakage Current IGSS ±100 nA VGS = ± 30 V, VDS = 0
Input Capacitance Ciss 3600 pF VDS = 10 V
Output Capacitance Coss 700 pF VGS = 0
Reverse Transfer Capacitance Crss 50 pF f = 1 MHz
Turn-On Delay Time td(on) 40 ns ID = 13 A
Rise Time tr 70 ns VGS = 10 V
Turn-Off Delay Time td(off) 160 ns VDD = 150 V
Fall Time tf 60 ns RG = 10 Ω RL = 11.5 Ω
Total Gate Charge QG 95 nC ID = 25 A
Gate to Source Charge QGS 20 nC VDD = 400 V
Gate to Drain Charge QGD 40 nC VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 V IF = 25 A, VGS = 0
Reverse Recovery Time trr 500 ns IF = 25 A, VGS = 0
Reverse Recovery Charge Qrr 4.5
µ
A VDS = VDSS, VGS = 0
µ
C di/dt = 50 A/µS
Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time
PG.
VGS = 20-0 V
R
G = 25 Ω
VDD
50 Ω
ID
D.U.T.
IAS
BVDSS
L
V
DD
VDS
Starting Tch
PG.
VGS
0
t
US
t = 1
Duty Cycle ≤ 1%
RG
G = 10 Ω
R
D.U.T.
R
VDD
L
Test Circuit 3 Gate Charge
D.U.T.
I
PG.
G = 2 mA
50 Ω
RL
VDD
VGS
Wave
Form
I
D
Wave
Form
GS
V
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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TYPICAL CHARACTERISTICS (TA = 25 °C)
2SK2371/2SK2372
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 140 160
6040 80 100 120
T
C - Case Temperature - (°C)
FORWARD BIAS SAFE OPERATING AREA
1 000
Limited
DS (on)
100
ID (DC)
10
R
= 10 V)
GS
( V
ID (DC)
Power Dissipation Limitd
TA = 25 °C
Single Pulse
ID (pulse)
100 s
1 ms
10 ms
PW = 10 s
µ
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
210
180
150
120
90
60
30
PT - Total Power Dissipation - (W)
0
20 140 160
6040 80 100 120
C - Case Temperature - (°C)
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
VGS = 10 V
8 V
15
µ
Pulsed
6 V
10
1.0
ID - Drain Current - (A)
0.1
1
V
DS - Drain to Source Voltage - (V)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
1
ID - Drain Current - (A)
0.1
0
V
GS - Gate to Source Voltage - (V)
2SK2371
2SK2372
10 100 1 000
Tch = 125 °C
75 °C
25 °C
–25 °C
VDS = 10 V
Pulsed
51015
5
ID - Drain Current - (A)
0
V
DS - Drain to Source Voltage - (V)
5 V
51510
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2SK2371/2SK2372
1000
100
10
1.0
0.1
0.01
0.001
rth (t) - Transient Thermal Resistance - (°C/W)
10 100 1 m 10 m 100 m 1 10 100 1000
µµ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = –25 °C
25 °C
75 °C
125°C
10
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a) = 41.7 °C/W
Rth (ch-c) = 0.78 C/W
Tc = 25 °C
Single Pulse
PW - Pulse Width - (s)
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
1.0
Pulsed
1.0
0.1
yfs - Forward Transfer Admittance - (S)
1.0 10 1000100
I
D - Drain Current - (A)
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1.5
1.0
0.5
0
1.0 10 1000100
RDS (on) - Drain to Source On-State Resistance - (Ω)
I
D - Drain Current - (A)
VDS = 10 V
Pulsed
VGS = 10 V
Pulsed
ID = 25 A
13 A
0.5
0
RDS (on) - Drain to Source On-State Resistance - (Ω)
51520
V
GS - Gate to Source Voltage - (V)
6 A
10
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VGS (off) - Gate to Source Cutoff Voltage - V
–50 0 50 100 150
T
ch - Channel Temperature - (°C)
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2SK2371/2SK2372
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.0
0.5
ID = 25 A
0
–50 0 50 100 150
RDS (on) - Drain to Source On-State Resistance - (A)
Tch - Channel Temperature - (C)
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10000
1 000
100
13 A
Ciss
Coss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1.0
0.1
ISD - Diode Forward Current - (A)
0.01
V
SD - Source to Drain Voltage - (V)
SWITCHING CHARACTERISTICS
1000
100
VGS = 0 V
td (off)
Pulsed
1.00.50
1.5
tr
tf
td (on)
10
Ciss, Coss, Crss - Capacitance - pF
1.0
0.1 1.0
DS - Drain to Source Voltage - (V)
V
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
600
500
400
300
200
100
tW - Reverse Recovery Time - (ns)
0.1
I
F - Forward Current - (A)
1.0 10 100
10 100
di/dt = 50 A/ s
GS = 0
V
Crss
VGS = 0 V
f = 1 MHz
µ
1000
10
VDD = 150 V
V
td (on), tr, td (off), tf - Switching Time - (ns)
1.0
0.1
1.0 10 100
D - Drain Current - (A)
I
R
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500
400
VDD = 400 V
250 V
125 V
300
200
100
VDS
VDS - Drain to Source Voltage - (V)
020 8040 120
Q
60 100
g - Gate Charge (nC)
GS = 10 V
in = 10 Ω
VGS
20
18
16
14
12
10
8
6
4
2
VGS - Gate to Source Voltage - (V)
0
5
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2SK2371/2SK2372
SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE
600
500
<
IAS 25 A
=
R
G = 25 W
V
GS = 20 V → 0
V
DD = 150 V
400
300
200
100
EAS - Single Avalanche Energy - (mJ)
0
25 50 75 125 150100
Starting Tch - Starting Channel Temperature - (°C)
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 25 A
10
1.0
IAS - Single Avalanche Energy - (A)
100
µ
1 m 10 m 100 m
L - Inductive load - (H)
E
AS
= 446 mJ
VDD = 150 V
R
G = 25 Ω
V
GS = 20
→
0 V
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2SK2371/2SK2372
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
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2SK2371/2SK2372
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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