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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2369/2SK2370
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-
tor designed for high voltage switching applications.
FEATURES
• Low On-Resistance
2SK2369: RDS(on) = 0.35 Ω (VGS = 10 V, ID = 10 A)
2SK2370: R
DS(on) = 0.4 Ω (VGS = 10 V, ID = 10 A)
• Low Ciss Ciss = 2400 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage(2SAK2369/2370) VDSS 450/500 V
Gate to Source Voltage V
Drain Current (DC) ID(DC) ±20 A
Drain Current (pulse)* ID(pulse) ±80 A
Total Power Dissipation (Tc = 25 ˚C) PT1 140 W
Total Power Dissipation (T
A = 25 ˚C) PT2 3.0 W
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 285 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
GSS ±30 V
AS 20 A
PACKAGE DIMENSIONS
15.7 MAX
6.0 1.0
20.0 ± 0.2
19 MIN.
2.2 ± 0.2
12
3.0 ± 0.2
5.45 5.45
(in millimeters)
3.0 ± 0.2
φ
4
4.5 ± 0.2
3
1.0 ± 0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
4.7 MAX.
1.5
7.0
2.8 ± 0.10.6 ± 0.1
Document No. TC-2507
(O. D. No. TC-8066)
Date Published January 1995 P
Printed in Japan
Gate
Source
Body
Diode
©
1995
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2369/2SK2370
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-State Resistance RDS(on) 0.30 0.35 VGS = 10 V 2SK2369
UNIT
Ω
0.32 0.40 ID = 10 V 2SK2370
Gate to Source Cutoff Voltage VGS(off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 7.5 VDS = 10 V, ID = 10 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 2400 VDS = 10 V
Output Capacitance Coss 500 VGS = 0
Reverse Transfer Capacitance Crss 45 f = 1 MHz
Turn-On Delay Time td(on) 35 ID = 10 A
Rise Time tr 60 VGS = 10 V
Turn-Off Delay Time td(off) 105 VDD = 150 V
Fall Time tf 65 R
Total Gate Charge QG 65 ID = 20 A
Gate to Source Charge QGS 15 VDD = 400 V
Gate to Drain Charge QGD 30 VGS = 10 V
Body Diode Forward Voltage VF(S-D) 1.0 IF = 20 A, VGS = 0
Reverse Recovery Time trr 500 IF = 20 A, VGS = 0
Reverse Recovery Charge Qrr 3.5 di/dt = 50 A/µs
V
S
µ
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
A
= 10 Ω RL = 15 Ω
G
C
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDS
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
I
PG.
G = 2 mA
50 Ω
RL
VDD
Test Circuit 2 Switching Time
L
DD
V
PG.
RG
G = 10 Ω
R
R
VDD
L
VGS
0
t
t = 1us
Duty Cycle ≤ 1 %
D.U.T.
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
g
2SK2369/2SK2370
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - (%)
0
20 140 160
6040 80 100 120
T
C - Case Temperature - (˚C)
FORWARD BIAS SAFE OPERATING AREA
100
10
DS (on)
R
at (V
Limited
= 10 V)
GS
ID (pulse)
ID (DC)
Power Dissipation Limited
10 ms
PW = 10 s
100 s
µ
1 ms
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
PT - Total Power Dissipation - (W)
0
20 140 160
6040 80 100 120
T
C - Case Temperature - (˚C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
25
µ
20
15
VGS = 10 V
8 V
6 V
1.0
ID - Drain Current - (A)
TC = 25 ˚C
Single Pulse
0.1
DS - Drain to Source Voltage - (V)
V
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
1.0
ID - Drain Current - (A)
0.1
0
GS - Gate to Source Volta
V
10 100 1 000
Tch = 125 ˚C
75 ˚C
25 ˚C
25 ˚C
VDS = 10 V
Pulsed
51015
e - (V)
10
ID - Drain Current - (A)
5
01
52010 15
V
DS - Drain to Source Voltage - (V)
5 V
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2SK2369/2SK2370
1 000
100
10
1
0.1
0.01
rth (t) - Transient Thermal Resistance - (˚C/W)
0.001
10 100 1 m 10 m 100 m 1 10 100 1 000
µµ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = –25 ˚C
25 ˚C
75 ˚C
10
125 ˚C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a) = 41.7 ˚C/W
Rth (ch-c) = 0.89 ˚C/W
TC = 25 ˚C
Single Pulse
PW - Pulse Width - (s)
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VDS = 10 V
2.5
Pulsed
2.0
1.5
Pulsed
1.0
| yfs | - Forward Transfer Admittance - (S)
1.0 10 100
D - Drain Current - (A)
I
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
RDS (on) - Drain to Source on-State Resistance - (Ω)
1.0 1000.1 10 25–25–50
D - Drain Current - (A)
I
VGS = 10 V
1.0
ID = 20 A
10 A
0.5
0
RDS (on) Drain to Source On-State Resistance - (Ω)
10 20 30
51525
GS - Gate to Source Voltage - (V)
V
GATE TO SOURCE CUT OFF VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
VGS (off) - Gate to Source Cutoff Voltage - (V)
0 50 75 100 125 150 175
ch - Channel Temperature - (˚C)
T
5 A
VDS = 10 V
I
D = 1 mA
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2SK2369/2SK2370
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.8
0.7
0.6
ID = 20 A
0.5
0.4
0.3
0.2
0.1
- Drain to Source On-State Resistance - (Ω)
DS (on)
R
0
0 50 75 100 125 150 175
25–25–50
T
ch
- Channel Temperature - (˚C)
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
1 000
VGS = 10 V
Pulsed
10 A
VGS = 0 V
f = 1 MHz
C
iss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1
0.1
- Diode Forward Current - (A)
SD
I
0.01
SD
- Source to Drain Voltage - (V)
V
SWITCHING CHARACTERISTICS
1 000
100
VGS = 0 V
1.00.50
t
t
t
r
t
f
d (off)
d (on)
1.5
- Capacitance - (pF)
rss
100
, C
oss
, C
iss
C
10
V
DS
- Drain to Source Voltage - (V)
REVERSE RECOVERY TIME vs.
REVERSE DRAIN CURRENT
600
500
400
300
200
100
- Reverse Recovery Time - (ns)
rr
t
0
0.1
1.0 100
I
F
- Forward Current - (A)
101.00.10.01
di/dt = 50 A/ s
V
GS
= 0 V
10
C
oss
C
rss
100 1 000
µ
- Switching Time - (ns)
f
, t
10
d (off)
, t
r
, t
d (on)
t
1.0
0.1
1.0 10 100
D
- Drain Current - (A)
I
VDD = 150 V
V
GS
= 10 V
R
in
= 10 Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
500
400
300
VDD = 400 V
250 V
125 V
ID = 20 A
20
18
16
14
V
GS
12
10
200
8
6
100
- Drain to Source Voltage - (V)
DS
V
06070
10 20 30 40 50
V
DS
4
- Gate to Source Voltage - (V)
GS
V
2
0
Qg - Gate Charge - (nC)
5
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2SK2369/2SK2370
SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE
300
200
100
EAS - Single Avalanche Energy - (mJ)
0
25 50 75 125100
Starting Channel Temperature - (˚C)
IAS ≤ 20 A
R
G = 25 Ω
V
GS = 20 V → 0
V
DD = 150 V
150 175
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
IAS = 20 A
10
1.0
IAS - Single Avalanche Current - (A)
0
100
µ
1 m 10 m 100 m
L - Inductive Load - (H)
VDD = 150 V
R
G = 25 Ω
V
GS = 20 V → 0 V
E
AS
= 285 mJ
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2SK2369/2SK2370
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
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2SK2369/2SK2370
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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