Page 1
DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2361/2SK2362
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2361/2SK2362 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
2SK2361: RDS (on) = 0.9 Ω (VGS = 10 V, ID = 5.0 A)
2SK2362: R
DS (on) = 1.0 Ω (VGS = 10 V, ID = 5.0 A)
• Low Ciss Ciss = 1050 pF TYP.
• High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2361/2SK2362)
Gate to Source Voltage V
Drain Current (DC) ID (DC) ±10 A
Drain Current (pulse)* ID (pulse) ±40 A
Total Power Dissipation (Tc = 25 ˚C) PT1 100 W
Total Power Dissipation (T
Channel Temperature Tch 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Single Avalanche Current** I
Single Avalanche Energy** EAS 142 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting T
ch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
A = 25 ˚C) PT2 3.0 W
VDSS 450/500 V
GSS ±30 V
AS 10 A
15.7 MAX.
1.06.0
123
19 MIN. 20.0±0.2
3.0±0.2
5.45 5.45
Gate
4
1.0±0.2
MP-88
Drain
3.2±0.2
4.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Body
Diode
4.7 MAX.
1.5
7.0
2.8±0.10.6±0.12.2±0.2
Document No. TC-2502
(O. D. No. TC-8061)
Date Published December 1994 P
Printed in Japan
Source
©
1995
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ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2361/2SK2362
CHARACTERISTIC SYMBOL MIN. TYP. MAX. TEST CONDITIONS
Drain to Source On-Resistance RDS (on) 0.7 0.9 VGS = 10 V 2SK2361
0.8 1.0 ID = 5.0 A 2SK2362
Gate to Source Cutoff Voltage VGS (off) 2.5 3.5 VDS = 10 V, ID = 1 mA
Forward Transfer Admittance | yfs | 3.0 VDS = 10 V, ID = 5.0 A
Drain Leakage Current IDSS 100 VDS = VDSS, VGS = 0
Gate to Source Leakage Current IGSS ±100 VGS = ±30 V, VDS = 0
Input Capacitance Ciss 1050 VDS = 10 V
Output Capacitance Coss 200 VGS = 0
Reverse Transfer Capacitance Crss 26 f = 1 MHz
Turn-On Delay Time td (on) 15 ID = 5.0 A
Rise Time tr 24 VGS = 10 V
Turn-Off Delay Time td (off) 50 VDD = 150 V
Fall Time tf 14 R
Total Gate Charge QG 26 ID = 10 A
Gate to Source Charge QGS 6.1 VDD = 400 V
Gate to Drain Charge QGD 12 VGS = 10 V
Body Diode Forward Voltage VF (S-D) 1.0 IF = 10 A, VGS = 0
Reverse Recovery Time trr 350 IF = 10 A, VGS = 0
Reverse Recovery Charge Qrr 2.0 di/dt = 50 A/µs
UNIT
Ω
Ω
V
S
µ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µ
C
= 10 Ω RL = 30 Ω
G
Test Circuit 1 Avalanche Capability
D.U.T.
R
G = 25 Ω
PG
VGS = 20 - 0 V
50 Ω
BVDSS
IAS
ID
VDS
VDD
Starting Tch
Test Circuit 3 Gate Charge
D.U.T.
G = 2 mA
I
PG.
50
Ω
L
V
RL
VDD
Test Circuit 2 Switching Time
D.U.T.
L
R
DD
PG.
RG
G = 10 Ω
R
VDD
VGS
0
t
t = 1 us
Duty Cycle ≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
10 %
0
ID
90 %
10 %
0
td (on) tr td (off) tf
ton toff
90 %
GS (on)
V
90 %
ID
10 %
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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TYPICAL CHARACTERISTICS (TA = 25 ˚C)
2SK2361/2SK2362
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 140 160
6040 80 100 120
C - Case Temperature - ˚C
T
FORWARD BIAS SAFE OPERATING AREA
100
ID (pulse)
Limited
= 10 V)
DS (on)
GS
10
R
(at V
ID (DC)
Power Dissipation Limited
1.0
ID - Drain Current - A
TC = 25 ˚C
Single Pulse
0.1
1
10 100 1 000
DS - Drain to Source Voltage - V
V
1 ms
10 ms
PW = 10 s
100 s
µ
µ
2SK2362
2SK2361
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
PT - Total Power Dissipation - W
0
20 140 160
6040 80 100 120
C - Case Temperature - ˚C
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
16
VGS = 20 V
12
10 V
8 V
6 V
8
ID - Drain Current - A
4
0
416812
V
DS - Drain to Source Voltage - V
Pulsed
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
100
10
1
ID - Drain Current - A
0.1
0
GS - Gate to Source Voltage - V
V
Pulsed
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
51015
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2SK2361/2SK2362
1 000
100
10
1
0.1
0.01
rth (ch-c) (t) - Transient Thermal Resistance - C/W
0.001
10 u 100 u 1 m 10 m 100 m 1 10 100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = –25 ˚C
10
25 ˚C
75 ˚C
125 ˚C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth (ch-a) = 41.7 ˚C/W
R
PW - Pulse Width - s
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
VDS = 10 V
1.5
Pulsed
1.0
th (ch-c) = 1.25 ˚C/W
TC = 25 ˚C
Single Pulse
Pulsed
ID = 6 A
3 A
1.5 A
1.0
| yfs | - Forward Transfer Admittance - S
0.1
1.0 10 100
D - Drain Current - A
I
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
3.0
2.0
1.0
0
RDS (on) - Drain to Source On-State Resistance - Ω
1.0 10 100
D - Drain Current - A
I
Pulsed
0.5
0
RDS (on) - Drain to Source On-State Resistance - Ω
10 20 30
V
GS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE
vs. CHANNEL TEMPERATURE
4.0
3.0
2.0
1.0
VGS (off) - Gate to Source Cutoff Voltage - V
0
–50 0 50 100 150
ch - Channel Temperature - ˚C
T
VDS = 10 V
ID = 1 mA
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2SK2361/2SK2362
g
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.6
ID = 6 A
3 A
1.2
0.8
0.4
0
RDS (on) - Drain to Source On-State Resistance - Ω
–50 0 50 100 150
Tch - Channel Temperature -˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
10 000
1 000
Ciss
Coss
100
VGS = 10 V
VGS = 0
f = 1 MHz
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1.0
0.1
ISD - Diode Forward Current - A
10 V
V
SD - Source to Drain Voltage - V
SWITCHING CHARACTERISTICS
1 000
100
10
VGS = 0
1.00.50
Pulsed
1.5
tr
tf
td(on)
td(off)
Ciss, Coss, Crss - Capacitance - pF
10
1
DS - Drain to Source Voltage - V
V
Crss
10 100 1 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1 000
100
trr - Reverse Recovery Time - ns
0.1
1.0 10 100
I
D - Drain Current - A
di/dt = 50 A/us
V
GS = 0
VDS = 150 V
td (on), tr, td (off), tf - Switching Time - ns
1.0
0.1
1.0 10 100
D - Drain Current - A
I
VGS = 10 V
RG = 10 Ω
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400
ID = 10 A
300
VDD = 400 V
250 V
125 V
VGS
200
100
VDS - Drain to Source Voltage - V
VDS
0 10203040
Q
g - Gate Char
e - nC
16
14
12
10
8
6
4
VGS - Gate to Source Voltage - V
2
5
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2SK2361/2SK2362
g
SINGLE AVALANCHE ENERGY vs.
STARTING CHANNEL TEMPERATURE
150
142 mJ
ID (peak) = IAS
RG = 25 Ω
GS = 20 V → 0 V
V
V
DD = 150 V
100
50
EAS - Single Avalanche Energy - mJ
25 50 75 125 150100 175
Tch-Starting Channel Temperature - ˚C
Startin
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 10 A
10
1.0
IAS - Single Avalanche Current - A
0.1
100
µ
1.0 m 10 m 100 m
L - Inductive load - H
RG = 25 Ω
DD = 150 V
V
GS = 20 V → 0
V
Starting T
E
AS
= 142 mJ
ch = 25 ˚K
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2SK2361/2SK2362
REFERENCE
Document Name Document No.
NEC semiconductor device reliability/quality control system. TEI-1202
Quality grade on NEC semiconductor devices. IEI-1209
Semiconductor device mounting technology manual. IEI-1207
Semiconductor device package manual. IEI-1213
Guide to quality assurance for semiconductor devices. MEI-1202
Semiconductor selection guide. MF-1134
Power MOS FET features and application switching power supply. TEA-1034
Application circuits using Power MOS FET. TEA-1035
Safe operating area of Power MOS FET. TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
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2SK2361/2SK2362
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard:Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
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