Filterless Class-D amplifier with built-in output stage
1.4 W into 8 Ω at 5.0 V supply with less than 1% THD
85% efficiency at 5.0 V, 1.4 W into 8 Ω speaker
Better than 98 dB SNR (signal-to-noise ratio)
Single-supply operation from 2.5 V to 5.0 V
20 nA ultralow shutdown current
Short-circuit and thermal protection
Available in 8-lead, 3 mm × 3 mm LFCSP
Pop-and-click suppression
Built-in resistors reduce board component count
Fixed and user-adjustable gain configurations
APPLICATIONS
Mobile phones
MP3 players
Portable gaming
Portable electronics
Educational toys
GENERAL DESCRIPTION
The SSM2301 is a fully integrated, high efficiency, Class-D audio
amplifier. It is designed to maximize performance for mobile
phone applications. The application circuit requires a minimum
of external components and operates from a single 2.5 V to 5.0 V
supply. It is capable of delivering 1.4 W of continuous output
power with less than 1% THD + N driving an 8 Ω load from a
5.0 V supply.
The SSM2301 features a high efficiency, low noise modulation
scheme that does not require any external LC output filters. The
modulation continues to provide high efficiency even at low
Class-D Audio Amplifier
SSM2301
output power. It operates with 85% efficiency at 1.4 W into 8 Ω
from a 5.0 V supply and has a signal-to-noise ratio (SNR) that is
better than 93 dB. Spread-spectrum modulation is used to
provide lower EMI-radiated emissions compared with other
Class-D architectures.
The SSM2301 has a micropower shutdown mode with a
maximum shutdown current of 30 nA. Shutdown is enabled by
applying a logic low to the
The device also includes pop-and-click suppression circuitry.
This minimizes voltage glitches at the output during turn-on
and turn-off, thus reducing audible noise on activation and
deactivation.
The fully differential input of the SSM2301 provides excellent
rejection of common-mode noise on the input. Input coupling
capacitors can be omitted if the dc input common-mode voltage
is approximately V
DD
/2.
The SSM2301 also has excellent rejection of power supply noise,
including noise caused by GSM transmission bursts and RF
rectification. PSRR is typically 63 dB at 217 Hz.
The gain can be set to 6 dB or 12 dB utilizing the gain control
select pin connected respectively to ground or V
also be adjusted externally by using an external resistor.
The SSM2301 is specified over the comercial temperature range
(−40°C to +85°C). It has built-in thermal shutdown and output
short-circuit protection. It is available in an 8-lead, 3 mm × 3 mm
lead-frame chip scale package (LFCSP).
SD
pin.
. Gain can
DD
FUNCTIONAL BLOCK DIAGRAM
SSM2301
1
0.01µF
AUDIO IN+
AUDIO IN–
SHUTDOWN
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rightsof third parties that mayresultfrom its use. Specifications subject to change without notice. No
license isgranted by implicationorotherwise under any patent or patent rights of Analog Devices.
Trademarks and registeredtrademarks are the property of their respective owners.
IN+
IN–
1
0.01µF
GAIN
SD
1
INPUT CAPS ARE OPTIONAL IF INPUT DC COMMON-MODE
VOLTAGE IS APPROXIMATELY V
Total Harmonic Distortion + Noise THD + N PO = 1 W into 8 Ω, f = 1 kHz, VDD = 5.0 V 0.1 %
P
Input Common-Mode Voltage Range VCM 1.0 VDD − 1 V
Common-Mode Rejection Ratio CMRR
Average Switching Frequency fSW 1.8 MHz
Differential Output Offset Voltage V
OOS
POWER SUPPLY
Supply Voltage Range V
DD
Power Supply Rejection Ratio PSRR VDD = 2.5 V to 5.0 V, 50 Hz, input floating/ground 70 85 dB
PSRR
Supply Current I
SY
V
V
Shutdown Current ISD
GAIN CONTROL
Closed-Loop Gain Av0 GAIN pin = 0 V 6 dB
Av1 GAIN pin = VDD 12 dB
Differential Input Impedance Z
IN
SHUTDOWN CONTROL
Input Voltage High V
Input Voltage Low V
Turn-On Time t
Turn-Off Time t
Output Impedance Z
IH
IL
WU
SD
OUT
NOISE PERFORMANCE
Output Voltage Noise en
Signal-to-Noise Ratio SNR P
RL = 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.4 W
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.615 W
L
= 8 Ω, THD = 1%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.275 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 5.0 V 1.53 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 3.6 V 0.77 W
L
= 8 Ω, THD = 10%, f = 1 kHz, 20 kHz BW, VDD = 2.5 V 0.35 W
L
=1.4 W, 8 Ω, VDD = 5.0 V 85 %
OUT
= 0.5 W into 8 Ω, f = 1 kHz, VDD = 3.6 V 0.04 %
O
GSM VCM
= 2.5 V ± 100 mV at 217 Hz 55 dB
G = 6 dB; G = 12 dB 2.0 mV
Guaranteed from PSRR test 2.5 5.0 V
GSM
V
= 100 mV at 217 Hz, inputs ac GND,
RIPPLE
= 0.01 μF, input referred
C
IN
63 dB
VIN = 0 V, no load, VDD = 5.0 V 5.5 mA
= 0 V, no load, VDD = 3.6 V 4.5 mA
IN
= 0 V, no load, VDD = 2.5 V 4.0 mA
IN
SD
= GND
SD
= VDD,
SD
= GND
20 nA
150 KΩ
210 KΩ
ISY ≥ 1 mA 1.2 V
ISY ≤ 300 nA 0.5 V
SD
rising edge from GND to VDD
SD
falling edge from VDD to GND
SD
= GND
= 2.5 V to 5.0 V, f = 20 Hz to 20 kHz, inputs are
V
DD
ac grounded, sine wave, A
= 1.4 W, RL = 8 Ω 98 dB
OUT
= 6 dB, A weighting
V
30 ms
5 μs
>100 KΩ
35 μV
SSM2301 Preliminary Technical Data
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings apply at 25°C, unless otherwise noted.
Table 2.
Parameter Rating
Supply Voltage 6 V
Input Voltage V
Common-Mode Input Voltage V
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −40°C to +85°C
Junction Temperature Range −65°C to +165°C
Lead Temperature Range
(Soldering, 60 sec)
DD
DD
300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 3. Thermal Resistance
Package Type θJA θ
8-lead, 3 mm × 3 mm LFCSP 62 TBD °C/W
Unit
JC
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Preliminary Technical Data SSM2301
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2GAIN
3IN+
(Not to Scale)
4IN–
PIN 1
INDICATO R
SSM2301
TOP VIEW
8OUT–
7GND
6VDD
5OUT+
06163-002
SD
Figure 2. SSM2301 LFCSP Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1
SD
Shutdown Input. Active low digital input.
2 GAIN Gain Selection. Digital input.
3 IN+ Noninverting Input.
4 INL− Inverting Input.
5 OUT+ Noninverting Output.
6 VDD Power Supply.
7 GND Ground.
8 OUT− Inverting Output.
SSM2301 Preliminary Technical Data
TYPICAL PERFORMANCE CHARACTERISTICS
100
RL = 8Ω, 33µH
GAIN = 12dB
10
1
THD + N (%)
0.1
0.01
0.0000010.00010.0000110
0.0010.010.11
OUTPUT POWER (W)
Figure 3. THD + N vs. Output Power into 8 Ω, A
VDD = 2.5V
VDD = 3.6V
VDD = 5V
= 12 dB
V
06163-003
100
VDD = 3.6V
= 8Ω, 33µH
R
L
10
1
0.1
THD + N (%)
250mW
0.01
0.001
0.0001
10100k
Figure 6. THD + N vs. Frequency, V
500mW
125mW
1001k10k
FREQUENCY (Hz)
= 3.6 V
DD
06163-006
100
RL = 8Ω, 33µH
GAIN = 6dB
10
1
THD + N (%)
0.1
0.01
0.0000010.0001
0.0000001
0.0000110
0.001
OUTPUT POWER (W)
Figure 4. THD + N vs. Output Power into 8 Ω, A
100
VDD = 5V
= 8Ω, 33µH
R
L
10
1
0.1
THD + N (%)
0.01
500mW
1W
250mW
VDD = 2.5V
VDD = 3.6V
0.01
0.1
VDD = 5V
1
= 6 dB
V
100
VDD = 2.5V
R
= 8Ω, 33µH
L
10
1
0.1
THD + N (%)
125mW
0.01
0.001
0.0001
10100k
06163-004
Figure 7. THD + N vs. Frequency, V
250mW
750mW
1001k10k
FREQUENCY (Hz)
= 2.5 V
DD
06163-007
0.001
0.0001
10100k
1001k10k
FREQUENCY (Hz)
Figure 5. THD + N vs. Frequency, V
= 5.0 V
DD
06163-005
Figure 8. Supply Current vs. Supply Voltage, No Load
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