Analog Devices OP295, OP495 Datasheet

Dual/Quad Rail-to-Rail

a

FEATURES
Rail-to-Rail Output Swing
Single-Supply Operation: +3 V to +36 V
Low Offset Voltage: 300 mV
Gain Bandwidth Product: 75 kHz
High Open-Loop Gain: 1000 V/mV
Unity-Gain Stable
Low Supply Current/Per Amplifier: 150 mA max

APPLICATIONS
Battery Operated Instrumentation
Servo Amplifiers
Actuator Drives
Sensor Conditioners
Power Supply Control

GENERAL DESCRIPTION

Rail-to-rail output swing combined with dc accuracy are the key
features of the OP495 quad and OP295 dual CBCMOS opera­tional amplifiers. By using a bipolar front end, lower noise and
higher accuracy than that of CMOS designs has been achieved.
Both input and output ranges include the negative supply, pro­viding the user “zero-in/zero-out” capability. For users of 3.3
volt systems such as lithium batteries, the OP295/OP495 is
specified for three volt operation.

Maximum offset voltage is specified at 300 µV for +5 volt opera-
tion, and the open-loop gain is a minimum of 1000 V/mV. This
yields performance that can be used to implement high accuracy
systems, even in single supply designs.

The ability to swing rail-to-rail and supply +15 mA to the load
makes the OP295/OP495 an ideal driver for power transistors
and “H” bridges. This allows designs to achieve higher efficien­cies and to transfer more power to the load than previously pos­sible without the use of discrete components. For applications

Operational Amplifiers

OP295/OP495

PIN CONNECTIONS

8-Lead Narrow-Body SO 8-Lead Epoxy DIP

(S Suffix) (P Suffix)

OP495

8

V+

7

OUT B
–IN B

6

+IN B

OUT D

14

–IN D

13

+IN D

12

11

V–

10

+IN C

9

–IN C

OUT C

8

OUT A

–IN A

+IN A

V–

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

NC

1
2

3

4

OP295

1
2
3
413

OP495

5
6
7
89

NC = NO CONNECT

8

V+
OUT B

7

6

–IN B

+IN B

5

OUT D

16

–IN D

15
14

+IN D

V–

12

+IN C

11

–IN C

10

OUT C
NC

OUT A

1
2

–IN A
+IN A

OP295

3
45

V–

14-Lead Epoxy DIP 16-Lead SO (300 Mil)

(P Suffix) (S Suffix)

OUT A

1
2

–IN A
+IN A

3

4

V+

5

+IN B

6

–IN B

OUT B

7

that require driving inductive loads, such as transformers, in­creases in efficiency are also possible. Stability while driving
capacitive loads is another benefit of this design over CMOS
rail-to-rail amplifiers. This is useful for driving coax cable or
large FET transistors. The OP295/OP495 is stable with loads in
excess of 300 pF.

The OP295 and OP495 are specified over the extended indus­trial (–40°C to +125°C) temperature range. OP295s are avail­able in 8-pin plastic and ceramic DIP plus SO-8 surface mount
packages. OP495s are available in 14-pin plastic and SO-16
surface mount packages. Contact your local sales office for
MIL-STD-883 data sheet.

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

© Analog Devices, Inc., 1995

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: [phone] Fax: [phone]

OP295/OP495–SPECIFICA TIONS

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V

Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 4.0 V, –40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain A

Offset Voltage Drift ∆VOS/∆T 15 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Output Current I

POWER SUPPLY

Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB

Supply Current Per Amplifier I

DYNAMIC PERFORMANCE

Skew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θ

NOISE PERFORMANCE

Voltage Noise en
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

OS

B

OS

CM

VO

OH

OL

OUT

SY

O

p-p

n

n

(@ VS = +5.0 V, VCM = +2.5 V, TA = +258C unless otherwise noted)

–40°C ≤ TA ≤ +125°C 800 µV
–40°C ≤ TA ≤ +125°C30nA
–40°C ≤ TA ≤ +125°C ±5nA

0 +4.0 V

RL = 10 kΩ, 0.005 ≤ V
RL = 10 kΩ, –40°C ≤ TA ≤ +125°C 500 V/mV

≤ 4.0 V 1000 10,000 V/mV

OUT

RL = 100 kΩ to GND 4.98 5.0 V
RL = 10 kΩ to GND 4.90 4.94 V
I

= 1 mA, –40°C ≤ TA ≤ +125°C 4.7 V

OUT

RL = 100 kΩ to GND 0.7 2 mV
RL = 10 kΩ to GND 0.7 2 mV
I

= 1 mA, –40°C ≤ TA ≤ +125°C90mV

OUT

± 11 ± 18 mA

±1.5 V ≤ VS ≤ ±15 V,

–40°C ≤ TA ≤ +125°C85dB
V

= 2.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C 150 µA

OUT

0.1 Hz to 10 Hz 1.5 µV p-p
f = 1 kHz 51 nV/√Hz
f = 1 kHz <0.1 pA/√Hz

30 300 µV
820 nA
±1 ±3nA

86 Degrees

ELECTRICAL CHARACTERISTICS

(@ VS = +3.0 V, VCM = +1.5 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V
Common-Mode Rejection Ratio CMRR 0 V ≤ VCM ≤ 2.0 V, –40°C ≤ TA ≤ +125°C 90 110 dB
Large Voltage Gain A
Offset Voltage Drift ∆VOS/∆T 1 µV/°C

OS
B
OS

CM

VO

RL = 10 kΩ 750 V/mV

0 +2.0 V

30 500 µV
820 nA
±1 ±3nA

OUTPUT CHARACTERISTICS

Output Voltage Swing High V
Output Voltage Swing Low V

OH

OL

RL = 10 kΩ to GND 2.9 V
RL = 10 kΩ to GND 0.7 2 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR ±1.5 V ≤ VS ≤ ±15 V 90 110 dB

±1.5 V ≤ VS ≤ ±15 V,
–40°C ≤ TA ≤ +125°C85dB

Supply Current Per Amplifier I

SY

V

= 1.5 V, RL = ∞, –40°C ≤ TA ≤ +125°C 150 µA

OUT

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 75 kHz
Phase Margin θ

O

85 Degrees

NOISE PERFORMANCE

Voltage Noise en
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

p-p

n

n

0.1 Hz to 10 Hz 1.6 µV p-p
f = 1 kHz 53 nV/√Hz
f = 1 kHz <0.1 pA/√Hz

–2–

REV. B

OP295/OP495

ELECTRICAL CHARACTERISTICS

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I
Input Voltage Range V

Common-Mode Rejection Ratio CMRR –15.0 V ≤ VCM ≤ +13.5 V, –40°C ≤ TA ≤ +125°C 90 110 dB
Large Signal Voltage Gain A
Offset Voltage Drift ∆VOS/∆T 1 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V
Output Voltage Swing Low V
Output Current I

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±1.5 V to ±15 V 90 110 dB
Supply Current I
Supply Voltage Range V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 10 kΩ 0.03 V/µs
Gain Bandwidth Product GBP 85 kHz
Phase Margin θ

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

Specifications subject to change without notice.

OS

B

OS

CM

VO

OH

OL

OUT

SY

S

O

n p-p
n

n

(@ VS = ±15.0 V, TA = +258C unless otherwise noted)

–40°C ≤ TA ≤ +125°C 800 µV
VCM = 0 V 7 20 nA
VCM = 0 V, –40°C ≤ TA ≤ +125°C30nA
VCM = 0 V ±1 ±3nA
V

= 0 V, –40°C ≤ TA ≤ +125°C ±5nA

CM

RL = 10 kΩ 1000 4000 V/mV

RL = 100 kΩ to GND 14.95 V
RL = 10 kΩ to GND 14.80 V
RL = 100 kΩ to GND –14.95 V
RL = 10 kΩ to GND –14.85 V

VS = ±1.5 V to ±15 V, –40°C ≤ TA ≤ +125°C85 dB
VO = 0 V, RL = ∞, VS = ±18 V,
–40°C ≤ TA ≤ +125°C 175 µA

0.1 Hz to 10 Hz 1.25 µV p-p
f =1 kHz 45 nV/√Hz
f = 1 kHz <0.1 pA/√Hz

–15 +13.5 V

± 15 ±25 mA

+3 (±1.5) +36 (±18) V

30 300 µV

83 Degrees

W AFER TEST LIMITS

(@ VS = +5.0 V, VCM = 2.5 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Limit Units

Offset Voltage Vos 300 µV max
Input Bias Current I
Input Offset Current I
Input Voltage Range

1

Common-Mode Rejection Ratio CMRR 0 V ≤ V
Power Supply Rejection Ratio PSRR ±1.5 V ≤ V
Large Signal Voltage Gain A
Output Voltage Swing High V
Supply Current Per Amplifier I

NOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

1

Guaranteed by CMRR test.

B
OS

V

SY

CM

VO
OH

RL = 10 kΩ 1000 V/mV min
RL = 10 kΩ 4.9 V min
V

OUT

≤ 4 V 90 dB min

CM

≤ ±15 V 90 µV/V

S

= 2.5 V, RL = ∞ 150 µA max

20 nA max
±2 nA max
0 to +4 V min

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP295GP –40°C to +125°C 8-Pin Plastic DIP N-8
OP295GS –40°C to +125°C 8-Pin SOIC SO-8
OP295GBC +25°C DICE

Model Range Description Option

OP495GP –40°C to +125°C 14-Pin Plastic DIP N-14
OP495GS –40°C to +125°C 16-Pin SOL R-16
OP495GBC +25°C DICE

Temperature Package Package

REV. B

–3–

OP295/OP495

15.2

–15.2

100

–14.6

–15.0

–25

–14.8

–50

14.2

–14.4

14.4

14.6

14.8

15.0

7550250

TEMPERATURE – °C

– OUTPUT SWING – Volts

+ OUTPUT SWING – Volts

VS = ±15V

RL = 100k

RL = 2k

RL = 2k

RL = 100k

RL = 10k

RL = 10k

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

Input Voltage
Differential Input Voltage

2

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±18 V

2

. . . . . . . . . . . . . . . . . . . . . . . +36 V

1

Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite

Storage Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C

Operating Temperature Range

OP295G, OP495G . . . . . . . . . . . . . . . . . . .–40°C to +125°C

Junction Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C

Lead Temperature Range (Soldering, 60 Sec) . . . . . . . +300°C

Package Type u

3

JA

u

JC

Unit

8-Pin Plastic DIP (P) 103 43 °C/W
8-Pin SOIC (S) 158 43 °C/W
14-Pin Plastic DIP (P) 83 39 °C/W
16-Pin SO (S) 98 30 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless
otherwise noted.

2

For supply voltages less than ±18 V, the absolute maximum input voltage is equal
to the supply voltage.

3

θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket

for cerdip, P-DIP, and LCC packages; θJA is specified for device soldered in circuit
board for SOIC package.

DICE CHARACTERISTICS

OP295 Die Size 0.066 × 0.080 inch, 5,280 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 74.

Typical Characteristics

140

120

100

80

60

40

SUPPLY CURRENT PER AMPLIFIER – µA

20

–50

–25

Supply Current Per Amplifier vs. Temperature Output Voltage Swing vs. Temperature

TEMPERATURE – °C

VS = +36V

VS = +5V

VS = +3V

7550250

100

–4–

OP495 Die Size 0.113 × 0.083 inch, 9,380 sq. mils.
Substrate (Die Backside) Is Connected to V+.
Transistor Count, 196.

REV. B