Analog Devices OP193, OP493 Datasheet

Precision, Micropower

NC = NO CONNECT

1
2
3
4

8
7
6
5

OUT A

V+

NULL

NC

NULL

–IN A
+IN A

V–

OP193

OP193

OUT A

V+

NULL

NCNULL
–IN A
+IN A

V–

14
13
12
11
10

9
8

1
2
3
4
5
6
7

OP493

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C

OP493

OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C
NC

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

NC

NC = NO CONNECT

a

FEATURES
Operates from +1.7 V to 618 V
Low Supply Current: 15 mA/Amplifier
Low Offset Voltage: 75 mV
Outputs Sink and Source: 68 mA
No Phase Reversal
Single or Dual Supply Operation
High Open-Loop Gain: 600 V/mV
Unity-Gain Stable

APPLICATIONS
Digital Scales
Strain Gages
Portable Medical Equipment
Battery Powered Instrumentation
Temperature Transducer Amplifier

GENERAL DESCRIPTION

The OP193 family of single-supply operational amplifiers fea­tures a combination of high precision, low supply current and
the ability to operate at low voltages. For high performance in
single supply systems the input and output ranges include
ground, and the outputs swing from the negative rail to within
600 mV of the positive supply. For low voltage operation the
OP193 family can operate down to 1.7 volts or ± 0.85 volts.

The combination of high accuracy and low power operation
make the OP193 family useful for battery powered equipment.
Its low current drain and low voltage operation allow it to con­tinue performing long after other amplifiers have ceased func­tioning either because of battery drain or headroom.

The OP193 family is specified for single +2 volt through dual
±15 volt operation over the HOT (–40°C to +125°C) tempera-
ture range. They are available in plastic DIPs, plus SOIC sur­face mount packages.

Operational Amplifiers

OP193/OP293/OP493*

PIN CONFIGURATIONS

8-Lead SO

(S Suffix)

8-Lead SO

(S Suffix)

OUT A

–IN A

OP293

+IN A

V–

14-Lead Epoxy DIP

(P Suffix)

V+
OUT B
–IN B
+IN B

8-Lead Epoxy DIP

(P Suffix)

8-Lead Epoxy DIP

(P Suffix)

OUT A

–IN A
+IN A

V–

1

OP293

2
3
4

8
7
6
5

V+
OUT B
–IN B
+IN B

16-Lead Wide Body SOL

(S Suffix)

*Patent pending.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

© Analog Devices, Inc., 1996

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: [phone] Fax: [phone]

OP193/OP293/OP493–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

(@ VS = 615.0 V, TA = +258C unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP193 75 150 µV
OP193, –40°C ≤ TA ≤ +125°C 175 250 µV
OP293 100 250 µV
OP293, –40°C ≤ T

≤ +125°C 200 350 µV

A

OP493 125 275 µV

Input Bias Current I

OP493, –40°C ≤ T
V

B

CM

= 0 V,

≤ +125°C 225 375 µV

A

–40°C ≤ TA ≤ +125°C1520nA

Input Offset Current I

OS

VCM = 0 V,
–40°C ≤ TA ≤ +125°C24nA

Input Voltage Range V

CM

–14.9 +13.5 –14.9 +13.5 V

Common-Mode Rejection CMRR –14.9 ≤ VCM ≤ +14 V 100 116 97 116 dB

–14.9 ≤ V

≤ +14 V,

CM

–40°C ≤ TA ≤ +125°C9794dB

Large Signal Voltage Gain A

VO

RL = 100 kΩ,
–10 V ≤ V
–40°C ≤ T

OUT

A

≤ +10 V 500 500 V/mV

≤ +85°C 300 300 V/mV

–40°C ≤ TA ≤ +125°C 300 300 V/mV

Large Signal Voltage Gain A

VO

RL = 10 kΩ,
–10 V ≤ V

OUT

–40°C ≤ T

≤ +10 V 350 350 V/mV

≤ +85°C 200 200 V/mV

A

–40°C ≤ TA ≤ +125°C 150 150 V/mV

Large Signal Voltage Gain A

VO

RL = 2 kΩ,
–10 V ≤ V
–40°C ≤ T

≤ +10 V 200 200 V/mV

OUT

≤ +85°C 125 125 V/mV

A

–40°C ≤ TA ≤ +125°C 100 100 V/mV

Long Term Offset Voltage V

OS

Note 1 150 300 µV

Offset Voltage Drift ∆VOS/∆T Note 2 0.2 1.75 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

IL = 1 mA +14.1 14.2 +14.1 14.2 V
I

= 1 mA,

L

–40°C ≤ TA ≤ +125°C +14.0 +14.0 V
I

= 5 mA +13.9 14.1 +13.9 14.1 V

Output Voltage Swing Low V

OL

L

IL = –1 mA –14.7 –14.6 -14.7 –14.6 V
I

= –1 mA,

L

–40°C ≤ TA ≤ +125°C –14.4 –14.4 V
I

= –5 mA 14.2 –14.1 14.2 –14.1 V

Short Circuit Current I

SC

L

±25 ±25 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

= ±1.5 V to ±18 V 100 120 97 120 dB

S

VS = ±1.5 V to ±18 V,

Supply Current/Amplifier I

–40°C ≤ T

SY

–40°C ≤ TA ≤ +125°C, RL = ∞
V

OUT

≤ +125°C9794dB

A

= 0 V, VS = ±18 V 30 30 µA

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

n

n

f = 1 kHz 65 65 nV/√Hz
f = 1 kHz 0.05 0.05 pA/√Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 15 15 V/ms

L

Gain Bandwidth Product GBP 35 35 kHz
Channel Separation V

= 10 V p-p,

OUT

RL = 2 kΩ, f = 1 kHz 120 120 dB

NOTES

1

Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40°C to +25°C delta and the +25 °C to +125 °C delta.

Specifications subject to change without notice.

–2–

REV. A

OP193/OP293/OP493

ELECTRICAL SPECIFICATIONS

(@ VS = +5.0 V, VCM = 0.1 V, TA = +258C unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP193 75 150 µV
OP193, –40°C ≤ T

≤ +125°C 175 250 µV

A

OP293 100 250 µV
OP293, –40°C ≤ T

≤ +125°C 200 350 µV

A

OP493 125 275 µV

OP493, –40°C ≤ T
Input Bias Current I
Input Offset Current I
Input Voltage Range V

B
OS

CM

–40°C ≤ TA ≤ +125°C1520nA

–40°C ≤ TA ≤ +125°C24nA
Common-Mode Rejection CMRR 0.1 ≤ V

≤ +4 V 100 116 96 116 dB

CM

≤ +125°C 225 375 µV

A

0404V

0.1 ≤ VCM ≤ +4 V,

Large Signal Voltage Gain A

VO

–40°C ≤ T

RL = 100 kΩ,

0.03 ≤ V

≤ +125°C92 92 dB

A

≤ +4.0 V 200 200 V/mV

OUT

–40°C ≤ TA ≤ +85°C 125 125 V/mV
Large Signal Voltage Gain A

VO

–40°C ≤ T

RL = 10 kΩ,

0.03 ≤ V

≤ +125°C 130 130 V/mV

A

≤ +4.0 V 75 75 V/mV

OUT

–40°C ≤ TA ≤ +85°C 50 50 V/mV
Long Term Offset Voltage V

OS

–40°C ≤ T

Note 1 150 300 µV

≤ +125°C 70 70 V/mV

A

Offset Voltage Drift ∆VOS/∆T Note 2 0.2 1.25 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

IL = 100 µA 4.4 4.4 V

IL = 1 mA +4.1 4.4 +4.1 4.4 V

I

= 1 mA,

L

–40°C ≤ TA ≤ +125°C +4.0 +4.0 V

I

= 5 mA +4.0 4.4 +4.0 4.4 V

Output Voltage Swing Low V

OL

L

IL = –100 µA 140 160 140 160 mV

I

= –100 µA,

L

–40°C ≤ TA ≤ +125°C 220 220 mV

No Load 5 5 mV

I

= –1 mA 280 400 280 400 mV

L

I

= –1 mA,

L

–40°C ≤ TA ≤ +125°C 500 500 mV

I

= –5 mA 700 900 700 900 mV

Short Circuit Current I

SC

L

±8 ±8mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

= ±1.7 V to ±6.0 V 100 120 97 120 dB

S

VS = ±1.5 V to ±18 V,
Supply Current/Amplifier I

–40°C ≤ T

SY

VCM = 2.5 V, RL = ∞ 14.5 14.5 µA

≤ +125°C94 90 dB

A

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

n

n

f = 1 kHz 65 65 nV/√Hz

f = 1 kHz 0.05 0.05 pA/√Hz
Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 12 12 V/ms

L

Gain Bandwidth Product GBP 35 35 kHz

NOTES

1

Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40°C to +25°C delta and the +25 °C to +125 °C delta.

Specifications subject to change without notice.

REV. A

–3–

OP193/OP293/OP493
ELECTRICAL SPECIFICATIONS

(@ VS = +3.0 V, VCM = 0.1 V, TA = +258C unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP193 75 150 µV
OP193, –40°C ≤ T

≤ +125°C 175 250 µV

A

OP293 100 250 µV
OP293, –40°C ≤ T

≤ +125°C 200 350 µV

A

OP493 125 275 µV

OP493, –40°C ≤ T
Input Bias Current I
Input Offset Current I
Input Voltage Range V

B
OS

CM

–40°C ≤ TA ≤ +125°C1520nA

–40°C ≤ TA ≤ +125°C24nA
Common-Mode Rejection CMRR 0.1 ≤ V

≤ +2 V 97 116 94 116 dB

CM

≤ +125°C 225 375 µV

A

0202V

0.1 ≤ VCM ≤ +2 V,

Large Signal Voltage Gain A

VO

–40°C ≤ T

RL = 100 kΩ, 0.03 ≤ V

–40°C ≤ T

≤ +125°C9087dB

A

≤ +85°C 75 75 V/mV

A

≤ 2 V 100 100 V/mV

OUT

–40°C ≤ TA ≤ +125°C 100 100 V/mV
Long Term Offset Voltage V

OS

Note 1 150 300 µV
Offset Voltage Drift ∆VOS/∆T Note 2 0.2 1.25 µV/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

OH

IL = 1 mA +2.1 2.14 +2.1 2.14 V

IL = 1 mA,

–40°C ≤ T

≤ +125°C 1.9 1.9 V

A

IL = 5 mA +1.9 2.1 +1.9 2.1 V
Output Voltage Swing Low V

OL

IL = –1 mA 280 400 280 400 mV

IL = –1 mA

–40°C ≤ T

≤ +125°C 500 500 mV

A

IL = –5 mA 700 900 700 900 mV
Short Circuit Current I

SC

±8 ±8mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

= +1.7 V to +6 V, 100 97

S

–40°C ≤ TA ≤ +125°C9490dB
Supply Current/Amplifier I

SY

VCM = 1.5 V, RL = ∞ 14.5 22 14.5 22 µA

–40°C ≤ TA ≤ +125°C2222µA
Supply Voltage Range V

S

+2 ±18 +2 ±18 V

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

n

n

f = 1 kHz 65 65 nV/√Hz

f = 1 kHz 0.05 0.05 pA/√Hz
Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 10 10 V/ms

L

Gain Bandwidth Product GBP 25 25 kHz
Channel Separation V

= 10 V p-p,

OUT

RL = 2 kΩ, f = 1 kHz 120 120 dB

NOTES

1

Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40°C to +25°C delta and the +25 °C to +125 °C delta.

Specifications subject to change without notice.

–4–

REV. A

OP193/OP293/OP493

ELECTRICAL SPECIFICATIONS

(@ VS = +2.0 V, VCM = 0.1 V, TA = +258C unless otherwise noted)

“E” Grade “F” Grade

Parameter Symbol Conditions Min Typ Max Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP193 75 150 µV
OP193, –40°C ≤ T

≤ +125°C 175 250 µV

A

OP293 100 250 µV
OP293, –40°C ≤ T

≤ +125°C 175 350 µV

A

OP493 125 275 µV

Input Bias Current I
Input Offset Current I
Input Voltage Range V
Large Signal Voltage Gain A

B
OS

CM
VO

OP493, –40°C ≤ T
–40°C ≤ TA ≤ +125°C1520nA
–40°C ≤ TA ≤ +125°C24nA

RL = 100 kΩ, 0.03 ≤ V

≤ +125°C 225 375 µV

A

0101V

≤ 1 V 60 60 V/mV

OUT

–40°C ≤ TA ≤ +125°C 70 70 V/mV

Long Term Offset Voltage V

OS

Note 1 150 300 µV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
Supply Voltage Range V

SY

S

= +1.7 V to +6 V, 100 97

S

–40°C ≤ T

≤ +125°C9490dB

A

VCM = 1.0 V, RL = ∞ 13.2 20 13.2 20 µA
–40°C ≤ T

≤ +125°C2525µA

A

+2 ±18 +2 ±18 V

NOISE PERFORMANCE

Voltage Noise Density e
Current Noise Density i

n

n

f = 1 kHz 65 65 nV/√Hz
f = 1 kHz 0.05 0.05 pA/√Hz

Voltage Noise en p-p 0.1 Hz to 10 Hz 3 3 µV p-p

DYNAMIC PERFORMANCE

Slew Rate SR R

= 2 kΩ 10 10 V/ms

L

Gain Bandwidth Product GBP 25 25 kHz

W AFER TEST LIMITS

(@ VS = +5.0 V, VCM = 0.1 V, V

= 2 V, TA = +258C unless otherwise noted)

OUT

Parameter Symbol Conditions Limit Units

Offset Voltage V
Input Bias Current I

Input Offset Current I
Input Voltage Range

1

OS

B
OS

V

CM

Common-Mode Rejection CMRR 0 ≤ V
Power Supply Rejection Ratio PSRR V
Large Signal Voltage Gain A
Output Voltage Swing High V
Output Voltage Swing Low V
Supply Current/Amplifier I

NOTES
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

1

Guaranteed by CMRR test.

Specifications subject to change without notice.

VO

OH

OL

SY

VS = ±15 V, V
V

= +2 V, V

S

= 0 V ±75 µV max

OUT

= 1.0 V ±75 µV max

OUT

VCM = 1.0 V 20 nA max
VCM = 1.0 V 4 nA max

0 to 4 V min

≤ 4 V 96 dB min

CM

= ±1.5 V to ±18 V 100 dB min

S

RL = 100 kΩ 100 V/mV min
IL = 1 mA 4.1 V min
IL = –1 mA 400 mV max
VO = 0 V, RL = ∞, VS = ±18 V 25 µA max

REV. A

–5–