Analog Devices OP291GP, OP491GP, OP491GS, OP491GRU, OP291GS Datasheet

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REV. A

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a

OP191/OP291/OP491

GENERAL DESCRIPTION

The OP191, OP291, and OP491 are single, dual and quad
micropower, single-supply, 3 MHz bandwidth amplifiers fea­turing rail-to-rail inputs and outputs. All are guaranteed to
operate from a 3 V single supply as well as ±5 V dual supplies.

Fabricated on Analog Devices’ CBCMOS process, the OP191
family has a unique input stage that allows the input voltage to
safely extend 10 V beyond either supply without any phase inver­sion or latch-up. The output voltage swings to within millivolts
of the supplies and continues to sink or source current all the
way to the supplies.

Applications for these amplifiers include portable telecom
equipment, power supply control and protection, and interface
for transducers with wide output ranges. Sensors requiring a
rail-to-rail input amplifier include Hall effect, piezo electric, and
resistive transducers.

The ability to swing rail-to-rail at both the input and output
enables designers to build multistage filters in single-supply
systems and maintain high signal-to-noise ratios.

The OP191/OP291/OP491 are specified over the extended
industrial (–40°C to +125°C) temperature range. The OP191
single and OP291 dual amplifiers are available in 8-lead plastic
SO surface mount packages

*

. The OP491 quad is available in
14-lead DIPs and narrow 14-lead SO packages. Consult factory
for OP491 TSSOP availability.

*

The OP291 dual is also available in 8-lead Plastic Dip.

Micropower Single-Supply

Rail-to-Rail Input/Output Op Amps

PIN CONFIGURATIONS

8-Lead Narrow-Body SO 8-Lead Narrow-Body SO

8-Lead Plastic DIP 14-Lead Plastic DIP

14-Lead SO 14-Lead TSSOP

FEATURES
Single-Supply Operation: 2.7 V to 12 V
Wide Input Voltage Range
Rail-to-Rail Output Swing
Low Supply Current: 300 ␮A/Amp
Wide Bandwidth: 3 MHz
Slew Rate: 0.5 V/␮s
Low Offset Voltage: 700 ␮V
No Phase Reversal

APPLICATIONS
Industrial Process Control
Battery-Powered Instrumentation
Power Supply Control and Protection
Telecom
Remote Sensors
Low-Voltage Strain Gage Amplifiers
DAC Output Amplifier

1

2

3

4

8

7

6

5

OP191

1

2

3

4

8

7

6

5

OP291

1

2

3

4

8

7

6

5

OP291

OUTB

–INB

+INB

+V

OUTA

–INA

+INA

–V

1

2

3

4

5

6

7

14

13

12

11

10

9

8

OP491

OUTD

–IND

+IND

–V

+INC

–INC

OUTC

OUTA

–INA

+INA

+V

+INB

–INB

OUTB

1

2

3

4

5

6

7

14

13

12

11

10

9

8

OP491

OUTD

–IND

+IND

–V

+INC

–INC

OUTC

OUTA

–INA

+INA

+V

+INB

–INB

OUTB

1

2

5

6

7

3

4

14

13

10

9

8

12

11

OP491

OP191/OP291/OP491–SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage OP191G V

OS

80 500 µV

–40°C ≤ T

A

≤ +125°C1mV

OP291/OP491G V

OS

80 700 µV

–40°C ≤ T

A

≤ +125°C 1.25 mV

Input Bias Current I

B

30 65 nA

–40°C ≤ T

A

≤ +125°C95nA

Input Offset Current I

OS

0.1 11 nA

–40°C ≤ T

A

≤ +125°C22nA

Input Voltage Range 0 3 V
Common-Mode Rejection Ratio CMRR V

CM

= 0 V to 2.9 V 70 90 dB

–40°C ≤ T

A

≤ +125°C6587 dB

Large Signal Voltage Gain A

VO

RL = 10 kΩ , VO = 0.3 V to 2.7 V 25 70 V/mV
–40°C ≤ T

A

≤ +125°C 50 V/mV

Offset Voltage Drift ∆V

OS

/∆T 1.1 µV/°C

Bias Current Drift ∆I

B

/∆T 100 pA/°C

Offset Current Drift ∆IOS/∆T 20 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

RL = 100 kΩ to GND 2.95 2.99 V
–40°C to +125°C 2.90 2.98 V
R

L

= 2 kΩ to GND 2.8 2.9 V

–40°C to +125°C 2.70 2.8 V

Output Voltage Low V

OL

RL = 100 kΩ to V+ 4.5 10 mV
–40°C to +125°C35mV
R

L

= 2 kΩ to V+ 40 75 mV

–40°C to +125°C 130 mV

Short Circuit Limit I

SC

Sink/Source ±8.75 ±13.5 mA
–40°C to +125°C ±6.0 ±10.5 mA

Open-Loop Impedance Z

OUT

f = 1 MHz, AV = 1 200 Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB

–40°C ≤ T

A

≤ +125°C 75 110 dB

Supply Current/Amplifier I

SY

VO = 0 V 200 350 µA
–40°C ≤ TA ≤ +125°C 330 480 µA

DYNAMIC PERFORMANCE

Slew Rate +SR RL = 10 kΩ 0.4 V/µs
Slew Rate –SR R

L

= 10 kΩ 0.4 V/µs

Full-Power Bandwidth BW

P

1% Distortion 1.2 kHz

Settling Time t

S

To 0.01% 22 µs

Gain Bandwidth Product GBP 3 MHz
Phase Margin θ

O

45 Degrees

Channel Separation CS f = 1 kHz, RL = 10 kΩ 145 dB

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 2 µV p-p
Voltage Noise Density e

n

f = 1 kHz 35 nV/√Hz

Current Noise Density i

n

0.8 pA/√Hz

Specifications subject to change without notice.

(@ VS = +3.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25ⴗC unless otherwise noted.)

REV. A

–2–

REV. A

–3–

ELECTRICAL SPECIFICATIONS

(@ VS = +5.0 V, VCM = 0.1 V, VO = 1.4 V, TA = 25ⴗC unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage OP191 V

OS

80 500 µV

–40°C ≤ T

A

≤ +125°C 1.0 mV

OP291/OP491 V

OS

80 700 µV

–40°C ≤ T

A

≤ +125°C 1.25 mV

Input Bias Current I

B

30 65 nA

–40°C ≤ T

A

≤ +125°C95nA

Input Offset Current I

OS

0.1 11 nA

–40°C ≤ T

A

≤ +125°C22nA

Input Voltage Range 0 5 V
Common-Mode Rejection Ratio CMRR V

CM

= 0 V to 4.9 V 70 93 dB

–40°C ≤ T

A

≤ +125°C6590 dB

Large Signal Voltage Gain A

VO

RL = 10 kΩ , VO = 0.3 V to 4.7 V 25 70 V/mV
–40°C ≤ T

A

≤ +125°C 50 V/mV

Offset Voltage Drift ∆V

OS

/∆T –40°C ≤ TA ≤ +125°C 1.1 µV/°C

Bias Current Drift ∆I

B

/∆T 100 pA/°C

Offset Current Drift ∆IOS/∆T 20 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V

OH

RL = 100 kΩ to GND 4.95 4.99 V
–40°C to +125°C 4.90 4.98 V
R

L

= 2 kΩ to GND 4.8 4.85 V

–40°C to +125°C 4.65 4.75 V

Output Voltage Low V

OL

RL = 100 kΩ to V+ 4.5 10 mV
–40°C to +125°C35mV
R

L

= 2 kΩ to V+ 40 75 mV

–40°C to +125°C 155 mV

Short Circuit Limit I

SC

Sink/Source ±8.75 ±13.5 mA
–40°C to +125°C ±6.0 ±10.5 mA

Open-Loop Impedance Z

OUT

f = 1 MHz, AV = 1 200 Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.7 V to 12 V 80 110 dB

–40°C ≤ T

A

≤ +125°C 75 110 dB

Supply Current/Amplifier I

SY

VO = 0 V 220 400 µA
–40°C ≤ TA ≤ +125°C 350 500 µA

DYNAMIC PERFORMANCE

Slew Rate +SR RL = 10 kΩ 0.4 V/µs
Slew Rate –SR R

L

= 10 kΩ 0.4 V/µs

Full-Power Bandwidth BW

P

1% Distortion 1.2 kHz

Settling Time t

S

To 0.01% 22 µs

Gain Bandwidth Product GBP 3 MHz
Phase Margin θ

O

45 Degrees

Channel Separation CS f = 1 kHz, RL = 10 kΩ 145 dB

NOISE PERFORMANCE

Voltage Noise en p-p 0.1 Hz to 10 Hz 2 µV p-p
Voltage Noise Density e

n

f = 1 kHz 35 nV/√Hz

Current Noise Density i

n

0.8 pA/√Hz

NOTE
+5 V specifications are guaranteed by +3 V and ± 5 V testing.

Specifications subject to change without notice.

OP191/OP291/OP491

OP191/OP291/OP491

REV. A

–4–

ELECTRICAL SPECIFICATIONS

(@ VO = ⴞ5.0 V, –4.9 V ≤ VCM ≤ +4.9 V, TA = 25ⴗC unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage OP191 V

OS

80 500 µV

–40°C ≤ T

A

≤ +125°C1mV

OP291/OP491 V

OS

80 700 µV

–40°C ≤ T

A

≤ +125°C 1.25 mV

Input Bias Current I

B

30 65 nA

–40°C ≤ T

A

≤ +125°C95nA

Input Offset Current I

OS

0.1 11 nA

–40°C ≤ T

A

≤ +125°C22nA

Input Voltage Range –5 +5 V
Common-Mode Rejection CMR V

CM

= ±5 V 75 100 dB

–40°C ≤ T

A

≤ +125°C6797 dB

Large Signal Voltage Gain A

VO

RL = 10 kΩ, VO = ±4.7 V, 25 70
–40°C ≤ T

A

≤ +125°C 50 V/mV

Offset Voltage Drift ∆V

OS

/∆T 1.1 µV/°C

Bias Current Drift ∆I

B

/∆T 100 pA/°C

Offset Current Drift ∆IOS/∆T 20 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing V

O

RL = 100 kΩ to GND ±4.93 ± 4.99 V
–40°C to +125°C ±4.90 ± 4.98 V
R

L

= 2 kΩ to GND ±4.80 ± 4.95 V

–40°C ≤ T

A

≤ +125°C ± 4.65 ± 4.75 V

Short Circuit Limit I

SC

Sink/Source ± 8.75 ±16 mA
–40°C to +125°C ±6 ± 13 mA

Open-Loop Impedance Z

OUT

f = 1 MHz, AV = 1 200 Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

S

= ±5 V 80 110 dB

–40°C ≤ T

A

≤ +125°C 70 100 dB

Supply Current/Amplifier I

SY

VO = 0 V 260 420 µA
–40 ≤ TA ≤ +125°C 390 550 µA

DYNAMIC PERFORMANCE

Slew Rate ±SR R

L

=10 kΩ 0.5 V/µs

Full-Power Bandwidth BW

P

1% Distortion 1.2 kHz

Settling Time t

S

To 0.01% 22 µs

Gain Bandwidth Product GBP 3 MHz
Phase Margin θ

O

45 Degrees

Channel Separation CS f = 1 kHz 145 dB

NOISE PERFORMANCE

Voltage Noise e

n

p-p 0.1 Hz to 10 Hz 2 µV p-p

Voltage Noise Density e

n

f = 1 kHz 35 nV/√Hz

Current Noise Density i

n

0.8 pA/√Hz

Specifications subject to change without notice.

10

100

0%

90

5V

VS = ⴞ5V

R

L

= 2k⍀

A

V

= +1

V

IN

= 20V p-p

200␮s

5V

INPUT

OUTPUT

Figure 1. Input and Output with Inputs Overdriven by 5 V

OP191/OP291/OP491

REV. A

–5–

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . GND to V

S

10 V

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V

Output Short-Circuit Duration to GND . . . . . . . . . . Indefinite

Storage Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

OP191/OP291/OP491G . . . . . . . . . . . . . . . –40°C to +125°C

Junction Temperature Range

P, S, RU Packages . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering 60 sec) . . . . . . . . +300°C

Package Type ␪

JA

2

␪

JC

Units

8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 158 43 °C/W
14-Lead Plastic DIP (P) 76 33 °C/W
14-Lead SOIC (S) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless

otherwise noted.

2

θJA is specified for the worst case conditions; i.e., θ

JA

is specified for device in socket

for P-DIP packages; θ

JA

is specified for device soldered in circuit board for TSSOP

and SOIC packages.

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP191GS -40ⴗC to +125ⴗC 8-Lead SOIC SO-8
OP291GP

*

-40ⴗC to +125ⴗC 8-Lead Plastic DIP N-8
OP291GS -40ⴗC to +125ⴗC 8-Lead SOIC SO-8
OP491GP -40ⴗC to +125ⴗC 14-Lead Plastic DIP N-14
OP491GS -40ⴗC to +125ⴗC 14-Lead SOIC SO-14
OP491GRU -40ⴗC to +125ⴗC 14-Lead TSSOP RU-14

*

Not for new design; obsolete April 2002.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP191/OP291/OP491 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

OP191/OP291/OP491–Typical Performance Characteristics

INPUT OFFSET VOLTAGE – mV

12525–40

VCM = 0V

85

TEMPERATURE – ⴗC

0

–0.02

–0.04

–0.06

–0.08

–0.10

–0.12

–0.14

VCM = 2.9V

VS = +3V

VCM = 0.1V

VCM = 3V

TPC 3. Input Offset Voltage vs.

Temperature, V

S

= +3 V

36

–36

3.0

–18

–30

0.30

–24

0

0

–12

–6

6

12

18

30

24

2.72.42.11.81.51.20.900.60

INPUT COMMON-MODE VOLTAGE – V

INPUT BIAS CURRENT – nA

VS = +3V

TPC 6. Input Bias Current vs. Com­mon-Mode Voltage, V

S

= +3 V

1200

1000

800

600

400

200

0

12525–40

85

TEMPERATURE – ⴗC

OPEN-LOOP GAIN –V/mV

VS = 3V, VO = 0.3V/2.7V

RL = 100k⍀,
V

CM

= 2.9V

RL = 100k⍀,
V

CM

= 0.1V

TPC 9. Open-Loop Gain vs.
Temperature, V

S

= +3 V

INPUT OFFSET VOLTAGE – ␮V/ ⴗC

UNITS

120

0

7

60

20

1400

100

80

64325

VS = +3V

–40ⴗC < T

A

< +125ⴗC

BASED ON 600 OP AMPS

TPC 2. OP291 Input Offset Volt­age Drift Distribution, V

S

= +3 V

INPUT OFFSET CURRENT – nA

TEMPERATURE – ⴗC

0

–0.2

–0.4

–0.6

–0.8

–1.0

–1.2

–1.4

–1.6

–1.8

12525–40

85

VCM = 0.1V

VCM = 2.9V

VCM = 3V

VCM = 0V

VS = +3V

TPC 5. Input Offset Current vs. Tem­perature, V

S

= +3 V

160

100

60

–40

1k 10k 100k 1M 10M

80

100

120

140

–20

0

20

40

VS = +3V
T

A

= 25ⴗC

OPEN-LOOP GAIN – dB

90

45

0

270

225

180

135

PHASE SHIFT – ⴗC

FREQUENCY – Hz

TPC 8. Open-Loop Gain and Phase
vs. Frequency, V

S

= +3 V

180

0

0.22

40

20

–0.18

60

80

100

120

140

160

0.14

0.06–0.02–0.10

INPUT OFFSET VOLTAGE – mV

UNITS

VS = +3V
T

A

= 25ⴗC

BASED ON
1200 OP AMPS

TPC 1. OP291 Input Offset Voltage
Distribution, V

S

= +3 V

INPUT BIAS CURRENT – nA

TEMPERATURE – ⴗC

40

30

20

10

0

–10

–20

–30

–40

–50

–60

12525–40 85

V

CM

= 0V

V

CM

= 0.1V

V

CM

= 2.9V

V

CM

= 3V

VS = +3V

TPC 4. Input Bias Current vs.
Temperature, V

S

= +3 V

OUTPUT SWING – V

VS = +3V

TEMPERATURE – ⴗC

3.00

2.75
125

2.90

2.80

25

2.85

–40

2.95

85

+VO @ RL = 100k⍀

+VO @ RL = 2k⍀

TPC 7. Output Voltage Swing vs.
Temperature, V

S

= +3 V

REV. A

–6–