ANALOG DEVICES OP262-EP Service Manual
15 MHz, Rail-to-Rail,
FEATURES
Supports defense and aerospace applications
(AQEC standard)
Military temperature range (−55°C to +125°C)
Controlled manufacturing baseline
One assembly/test site
One fabrication site
Enhanced product change notification
Qualification data available on request
Wide bandwidth: 15 MHz
Low offset voltage: 325 µV maximum
Low noise: 9.5 nV/√Hz @ 1 kHz
Single-supply operation: 2.7 V to 12 V
Low supply current: 850 A maximum
Rail-to-rail output swing
Low TCV
High slew rate: 13 V/µs
No phase inversion
Unity-gain stable
APPLICATIONS
Portable instrumentation
Sampling ADC amplifiers
Precision filters
: 1 µV/°C typical
OS
Dual Operational Amplifier
OP262-EP
PIN CONFIGURATION
1
OUT A
–IN A
+IN A
Figure 1. 8-Lead Narrow-Body SOIC (R Suffix)
V–
OP262-EP
2
TOP VIEW
3
(Not to Scale)
4
GENERAL DESCRIPTION
The OP262-EP is a low power, precision op amp that features a
rail-to-rail output and a 15 MHz bandwidth. With its low offset
voltage of 45 μV (typical) and low noise, it is well suited for
precision filter and control applications.
This product operates from a single supply as low as 2.7 V or
from dual supplies up to ±6 V. The OP262-EP is specified over
the military temperature range (−55°C to +125°C) and is available
in an 8-lead SOIC_N package.
Additional applications information is available in the
OP162/OP262/OP462 data sheet.
8
7
6
5
V+
OUT B
–IN B
+IN B
9256-003
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
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Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
OP262-EP
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Pin Configuration ............................................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
REVISION HISTORY
7/10—Revision 0: Initial Version
Absolute Maximum Ratings ............................................................6
ESD Caution...................................................................................6
Typical Performance Characteristics ..............................................7
Outline Dimensions ....................................................................... 11
Ordering Guide .......................................................................... 11
Rev. 0 | Page 2 of 12
OP262-EP
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = 5.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 45 325 μV
−55°C ≤ TA ≤ +125°C 1 mV
Input Bias Current IB 360 600 nA
−55°C ≤ TA ≤ +125°C 650 nA
Input Offset Current IOS ±2.5 ±25 nA
−55°C ≤ TA ≤ +125°C ±40 nA
Input Voltage Range VCM 0 4 V
Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 4.0 V, −55°C ≤ TA ≤ +125°C 70 110 dB
Large Signal Voltage Gain AVO R
R
R
Offset Voltage Drift1 ΔVOS/ΔT 1 μV/°C
Bias Current Drift ΔIB/ΔT 250 pA/°C
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH I
I
Output Voltage Swing Low VOL I
I
Short-Circuit Current ISC Short to ground ±80 mA
Maximum Output Current I
±30 mA
OUT
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V 120 dB
−55°C ≤ TA ≤ +125°C 90 dB
Supply Current/Amplifier ISY V
−55°C ≤ TA ≤ +125°C 850 μA
DYNAMIC PERFORMANCE
Slew Rate SR 1 V < V
Settling Time tS To 0.1%, AV = −1, VO = 2 V step 540 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φm 61 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 μV p-p
Voltage Noise Density en f = 1 kHz 9.5 nV/√Hz
Current Noise Density in f = 1 kHz 0.4 pA/√Hz
1
Offset voltage drift is the average of the −55°C to +25°C delta and the +25°C to +125°C delta.
= 2 kΩ, 0.5 ≤ V
L
= 10 kΩ, 0.5 ≤ V
L
= 10 kΩ, −55°C ≤ TA ≤ +125°C 40 V/mV
L
= 250 μA, −55°C ≤ TA ≤ +125°C 4.95 4.99 V
L
= 5 mA 4.85 4.94 V
L
= 250 μA, −55°C ≤TA ≤ +125°C 14 50 mV
L
= 5 mA 65 150 mV
L
= 2.5 V 500 700 μA
OUT
< 4 V, RL = 10 kΩ 10 V/μs
OUT
≤ 4.5 V 30 V/mV
OUT
≤ 4.5 V 65 88 V/mV
OUT
Rev. 0 | Page 3 of 12
OP262-EP
VS = 3.0 V, VCM = 0 V, TA = 25°C, unless otherwise noted.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS 50 325 μV
−55°C ≤ TA ≤ +125°C 1 mV
Input Bias Current IB 360 600 nA
Input Offset Current IOS ±2.5 ±25 nA
Input Voltage Range VCM 0 2 V
Common-Mode Rejection CMRR 0 V ≤ VCM ≤ 2.0 V, −55°C ≤ TA ≤ +125°C 70 110 dB
Large Signal Voltage Gain AVO R
R
OUTPUT CHARACTERISTICS
Output Voltage Swing High VOH I
I
Output Voltage Swing Low VOL I
I
POWER SUPPLY
Power Supply Rejection Ratio PSRR VS = 2.7 V to 7 V 110 dB
−55°C ≤ TA ≤ +125°C 60 dB
Supply Current/Amplifier ISY V
−55°C ≤ TA ≤ +125°C 850 μA
DYNAMIC PERFORMANCE
Slew Rate SR RL = 10 kΩ 10 V/μs
Settling Time tS To 0.1%, AV = −1, VO = 2 V step 575 ns
Gain Bandwidth Product GBP 15 MHz
Phase Margin φm 59 Degrees
NOISE PERFORMANCE
Voltage Noise en p-p 0.1 Hz to 10 Hz 0.5 μV p-p
Voltage Noise Density en f = 1 kHz 9.5 nV/√Hz
Current Noise Density in f = 1 kHz 0.4 pA/√Hz
= 2 kΩ, 0.5 V ≤ V
L
= 10 kΩ, 0.5 V ≤ V
L
= 250 μA 2.95 2.99 V
L
= 5 mA 2.85 2.93 V
L
= 250 μA 14 50 mV
L
= 5 mA 66 150 mV
L
= 1.5 V 500 650 μA
OUT
≤ 2.5 V 20 V/mV
OUT
≤ 2.5 V 20 30 V/mV
OUT
Rev. 0 | Page 4 of 12
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