Analog Devices OP162, OP262, OP462 Datasheet

15 MHz Rail-to-Rail

OP162

1

4

5

8

NULL
–IN A
+IN A

V–

NULL
V+
OUT A
NC

NC = NO CONNECT

OP262

1

4

5

8

OUT A

–IN A
+IN A

V–

V+
OUT B
–IN B
+IN B

14

13

12

11

10

9

8

1

2

3

4

7

6

5

OUT A

V–

+IN D

–IN D

OUT D

–IN A

+IN A

V+

OUT C

–IN C

+IN C

+IN B

–IN B

OUT B

OP462

1

7

8

14

OP462

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

V–

+IN D

–IN D

OUT D

OUT C

–IN C

+IN C

OP462

1

78

14

OUT A

–IN A
+IN A

V+
+IN B
–IN B

OUT B

OUT D
–IN D
+IN D
V–
+IN C
–IN C
OUT C

a

FEATURES
Wide Bandwidth: 15 MHz
Low Offset Voltage: 325 ␮V max
Low Noise: 9.5 nV/√Hz @ 1 kHz
Single-Supply Operation: +2.7 V to +12 V
Rail-to-Rail Output Swing
Low TCV
High Slew Rate: 13 V/␮s
No Phase Inversion
Unity Gain Stable

APPLICATIONS
Portable Instrumentation
Sampling ADC Amplifier
Wireless LANs
Direct Access Arrangement
Office Automation

GENERAL DESCRIPTION

The OP162 (single), OP262 (dual), OP462 (quad) rail-to-rail
15 MHz amplifiers feature the extra speed new designs require,
with the benefits of precision and low power operation. With
their incredibly low offset voltage of 45 µV (typ) and low noise,
they are perfectly suited for precision filter applications and
instrumentation. The low supply current of 500 µA (typ) is
critical for portable or densely packed designs. In addition, the
rail-to-rail output swing provides greater dynamic range and
control than standard video amplifiers provide.

These products operate from single supplies as low as +2.7 V to
dual supplies of ±6 V. The fast settling times and wide output
swings recommend them for buffers to sampling A/D converters.
The output drive of 30 mA (sink and source) is needed for
many audio and display applications; more output current can
be supplied for limited durations.

The OP162 family is specified over the extended industrial
temperature range (–40°C to +125°C). The single OP162
and dual OP262 are available in 8-lead PDIP, SOIC and
TSSOP packages. The quad OP462 is available in 14-lead
PDIP, narrow-body SOIC and TSSOP packages.

: 1 ␮V/ⴗC typ

OS

Operational Amplifiers

OP162/OP262/OP462

PIN CONFIGURATIONS

8-Lead Narrow-Body SO 8-Lead Plastic DIP

(S Suffix) (P Suffix)

1

NULL
–IN A

OP162

+IN A

4

V–

NC = NO CONNECT

8-Lead Narrow-Body SO 8-Lead Plastic DIP

(S Suffix) (P Suffix)

1

OUT A

OP262

+IN A

4

V–

14-Lead Narrow-Body SO 14-Lead Plastic DIP

(S Suffix) (P Suffix)

NULL

8

V+
OUT A
NC

5

8-Lead TSSOP

(RU Suffix)

8

V+

OUT B–IN A
–IN B
+IN B

5

8-Lead TSSOP

(RU Suffix)

NULL

–IN A

+IN A

V–

OUT A

–IN A

+IN A

V–

1

OP162

2

3

4

NC = NO CONNECT

1

OP262

2

3

4

8

7

6

5

8

7

6

5

NULL

V+

OUT A

NC

V+

OUT B

–IN B

+IN B

REV. C

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

14-Lead TSSOP

(RU Suffix)

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 2000

OP162/OP262/OP462–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(@ VS = +5.0 V, VCM = 0 V, TA = +25ⴗC, unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP162G, OP262G, OP462G, 45 325 µV
–40°C ≤ T
H Grade, –40°C ≤ T
D Grade, –40°C ≤ T

≤ +125°C 800 µV

A

≤ +125°C1mV

A

≤ +125°C 0.8 3 mV

A

5mV

Input Bias Current I

B

–40°C ≤ T

Input Offset Current I

OS

–40°C ≤ T

Input Voltage Range V

CM

Common-Mode Rejection CMRR 0 V ≤ V

–40°C ≤ T

Large Signal Voltage Gain A

Long-Term Offset Voltage V
Offset Voltage Drift ∆V

VO

OS

/∆T Note 2 1 µV/°C

OS

RL = 2 kΩ, 0.5 ≤ V

= 10 kΩ, 0.5 ≤ V

R

L

= 10 kΩ, –40°C ≤ TA ≤ +125°C 40 V/mV

R

L

G Grade

≤ +125°C 650 nA

A

≤ +125°C ±40 nA

A

0+4V

≤ +4.0 V,

CM

≤ +125°C 70 110 dB

A

1

≤ 4.5 V 30 V/mV

OUT

≤ 4.5 V 65 88 V/mV

OUT

360 600 nA

±2.5 ±25 nA

600 µV

Bias Current Drift ∆IB/∆T 250 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Short Circuit Current I
Maximum Output Current I

OH

OL

SC

OUT

IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.95 4.99 V
I

= 5 mA 4.85 4.94 V

L

IL = 250 µA, –40°C ≤ TA ≤ +125°C1450mV
I

= 5 mA 65 150 mV

L

Short to Ground ±80 mA

±30 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.7 V to +7 V 120 dB

S

–40°C ≤ T
OP162, V
–40°C ≤ T
OP262, OP462, V

≤ +125°C90 dB

A

= 2.5 V 600 750 µA

OUT

≤ +125°C1mA

A

= 2.5 V 500 700 µA

OUT

–40°C ≤ TA ≤ +125°C 850 µA

DYNAMIC PERFORMANCE

Slew Rate SR 1 V < V
Settling Time t

S

To 0.1%, AV = –1, VO = 2 V Step 540 ns

< 4 V, RL = 10 kΩ 10 V/µs

OUT

Gain Bandwidth Product GBP 15 MHz
Phase Margin φ

m

61 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subj]ect to change without notice.

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

n
n

n

f = 1 kHz 9.5 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–2–

REV. C

OP162/OP262/OP462–SPECIFICATIONS

OP162/OP262/OP462

ELECTRICAL CHARACTERISTICS

(@ VS = +3.0 V, VCM = 0 V, TA = +25ⴗC, unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP162G, OP262G, OP462G 50 325 µV
H Grade, –40°C ≤ T
D Grade, –40°C ≤ T

≤ +125°C1mV

A

≤ +125°C 0.8 3 mV

A

5mV
Input Bias Current I
Input Offset Current I
Input Voltage Range V

B

OS

CM

Common-Mode Rejection CMRR 0 V ≤ V

–40°C ≤ T

Large Signal Voltage Gain A

Long-Term Offset Voltage V

VO

OS

RL = 2 kΩ, 0.5 V ≤ V

= 10 kΩ, 0.5 V ≤ V

R

L

G Grade

0+2V

≤ +2.0 V,

CM

≤ +125°C 70 110 dB

A

1

≤ 2.5 V 20 V/mV

OUT

≤ 2.5 V 20 30 V/mV

OUT

360 600 nA
±2.5 ±25 nA

600 µV

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

OH

OL

IL = 250 µA 2.95 2.99 V
I

= 5 mA 2.85 2.93 V

L

IL = 250 µA1450mV
IL = 5 mA 66 150 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

SY

= +2.7 V to +7 V,

S

–40°C ≤ T
OP162, V
–40°C ≤ T

≤ +125°C 60 110 dB

A

= 1.5 V 600 700 µA

OUT

≤ +125°C1mA

A

OP262, OP462, V

= 1.5 V 500 650 µA

OUT

–40°C ≤ TA ≤ +125°C 850 µA

DYNAMIC PERFORMANCE

Slew Rate SR R
Settling Time t

S

= 10 kΩ 10 V/µs

L

To 0.1%, AV = –1, VO = 2 V Step 575 ns

Gain Bandwidth Product GBP 15 MHz
Phase Margin φ

m

59 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

n
n

n

f = 1 kHz 9.5 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

REV. C

–3–

OP162/OP262/OP462–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(@ VS = ⴞ5.0 V, VCM = 0 V, TA = +25ⴗC, unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V

OS

OP162G, OP262G, OP462G 25 325 µV
–40°C ≤ T
H Grade, –40°C ≤ T
D Grade, –40°C ≤ T

≤ +125°C 800 µV

A

≤ +125°C1mV

A

≤ +125°C 0.8 3 mV

A

5mV

Input Bias Current I

B

–40°C ≤ T

Input Offset Current I

OS

–40°C ≤ T

Input Voltage Range V

CM

Common-Mode Rejection CMRR –4.9 V ≤ V

–40°C ≤ T

Large Signal Voltage Gain A

Long-Term Offset Voltage V
Offset Voltage Drift ∆V

VO

OS

/∆T Note 2 1 µV/°C

OS

RL = 2 kΩ, –4.5 V ≤ V

= 10 kΩ, –4.5 V ≤ V

R

L

–40°C ≤ T
G Grade

1

≤ +125°C 650 nA

A

≤ +125°C ±40 nA

A

–5 +4 V

≤ +4.0 V,

CM

≤ +125°C 70 110 dB

A

≤ +125°C 25 V/mV

A

≤ 4.5 V 35 V/mV

OUT

≤ 4.5 V 75 120 V/mV

OUT

260 500 nA

±2.5 ±25 nA

600 µV

Bias Current Drift ∆IB/∆T 250 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage Swing High V

Output Voltage Swing Low V

Short Circuit Current I
Maximum Output Current I

OH

OL

SC

OUT

IL = 250 µA, –40°C ≤ TA ≤ +125°C 4.95 4.99 V
I

= 5 mA 4.85 4.94 V

L

IL = 250 µA, –40°C ≤ TA ≤ +125°C –4.99 –4.95 V
I

= 5 mA –4.94 –4.85 V

L

Short to Ground ±80 mA

±30 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V

Supply Current/Amplifier I

Supply Voltage Range V

SY

S

= ±1.35 V to ±6 V,

S

–40°C ≤ T
OP162, V
–40°C ≤ T

≤ +125°C 60 110 dB

A

= 0 V 650 800 µA

OUT

≤ +125°C 1.15 mA

A

OP262, OP462, V
–40°C ≤ T

≤ +125°C1mA

A

= 0 V 550 775 µA

OUT

+3.0 (±1.5) +12 (± 6) V

DYNAMIC PERFORMANCE

Slew Rate SR –4 V < V
Settling Time t

S

To 0.1%, AV = –1, VO = 2 V Step 475 ns

< 4 V, RL = 10 kΩ 13 V/µs

OUT

Gain Bandwidth Product GBP 15 MHz
Phase Margin φ

m

64 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125 °C, with an LTPD of 1.3.

2

Offset voltage drift is the average of the –40°C to +25°C delta and the +25°C to +125°C delta.

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.5 µV p-p

n
n

n

f = 1 kHz 9.5 nV/√Hz
f = 1 kHz 0.4 pA/√Hz

–4–

REV. C

OP162/OP262/OP462

ABSOLUTE MAXIMUM RATINGS

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±6 V

Input Voltage
Differential Input Voltage

1

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 6 V

2

. . . . . . . . . . . . . . . . . . . . . ±0.6 V

Internal Power Dissipation

Plastic DIP (P) . . . . . . . . . . . . . . . Observe Derating Curves

SOIC (S) . . . . . . . . . . . . . . . . . . . Observe Derating Curves

TSSOP (RU) . . . . . . . . . . . . . . . . Observe Derating Curves

Output Short-Circuit Duration . . . . Observe Derating Curves

Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range . . . . . . . . . . –40°C to +125°C

Junction Temperature Range . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering, 10 sec) . . . . . . . +300°C

Package Type ␪

3

JA

␪

JC

Units

8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 158 43 °C/W
8-Lead TSSOP (RU) 240 43 °C/W
14-Lead Plastic DIP (P) 83 36 °C/W
14-Lead SOIC (S) 120 36 °C/W
14-Lead TSSOP (RU) 180 35 °C/W

NOTES

1

For supply voltages greater than 6 volts, the input voltage is limited to less than or
equal to the supply voltage.

2

For differential input voltages greater than 0.6 volts the input current should be
limited to less than 5 mA to prevent degradation or destruction of the input devices.

3

θJA is specified for the worst case conditions, i.e., θ

for P-DIP package; θ
TSSOP packages.

is specified for device soldered in circuit board for SOIC and

JA

is specified for device in socket

JA

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP162GP –40°C to +125°C 8-Lead Plastic DIP N-8
OP162GS –40°C to +125°C 8-Lead SOIC SO-8
OP162HRU –40°C to +125°C 8-Lead TSSOP RU-8
OP262DRU –40°C to +125°C 8-Lead TSSOP RU-8
OP262GP –40°C to +125°C 8-Lead Plastic DIP N-8
OP262GS –40°C to +125°C 8-Lead SOIC SO-8
OP262HRU –40°C to +125°C 8-Lead TSSOP RU-8
OP462DRU –40°C to +125°C 14-Lead TSSOP RU-14
OP462DS –40°C to +125°C 14-Lead SOIC SO-14
OP462GP –40°C to +125°C 14-Lead Plastic DIP N-14
OP462GS –40°C to +125°C 14-Lead SOIC SO-14
OP462HRU –40°C to +125°C 14-Lead TSSOP RU-14

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the OP162/OP262/OP462 features proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

REV. C

–5–