Fast slew rate: 22 V/s typical
Settling time (0.01%): 1.2 µs maximum
Offset voltage: 300 µV maximum
High open-loop gain: 1000 V/mV minimum
Low total harmonic distortion: 0.002% typical
Improved replacement for AD712, LT1057, OP215, TL072,
and MC34
APPLICATIONS
Output amplifier for fast DACs
Signal processing
Instrumentation amplifiers
Fast sample-and-holds
Active filters
Low distortion audio amplifiers
Input buffer for ADCs
Servo controllers
082
OP249
PIN CONFIGURATIONS
UT A
1
OP249
A
2
–IN A
+IN A
3
V–
4
B
Figure 1. 8-Lead CERDIP (Q-8) and
8-Lead
PDIP (N-8)
1
+IN A
+IN B
–IN B
2
V–
3
4
A
OP249
B
Figure 2. 8-Lead SOIC (R-8)
8
7
6
5
8
7
6
5
V+
OUT B
–IN B
+IN B
–IN A
OUT A
V+
OUT B
00296-001
00296-002
GENERAL DESCRIPTION
The OP249 is a high speed, precision dual JFET op amp, similar to
the popular single op amp, the OP42. The OP249 outperforms
available dual amplifiers by providing superior speed with
excellent dc performance. Ultrahigh open-loop gain (1 kV/mV
minimum), low offset voltage, and superb gain linearity makes
the OP249 the industry’s first true precision, dual high speed
amplifier.
With a slew rate of 22 V/μs typical and a fast settling time of less
n 1.2 μs maximum to 0.01%, the OP249 is an ideal choice for
tha
high speed bipolar DAC and ADC applications. The excellent
dc performance of the OP249 allows the full accuracy of high
resolution CMOS DACs to be realized.
0.01
.001
TA = 25°C
= ±15V
V
S
= 10V p-p
V
O
= 10kΩ
R
L
= 1
A
V
20
1001k10k 20k
100
870ns
90
10
0%
500ns10mV
00296-003
Figure 3. Fast Settling (0.01%) Figure 4. Low Distortion, A
Symmetrical slew rate, even when driving large load, such as,
600 Ω o
r 200 pF of capacitance and ultralow distortion, make
the OP249 ideal for professional audio applications, active filters,
high speed integrators, servo systems, and buffer amplifiers.
The OP249 provides significant performance upgrades to the
TL072, AD712,
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
Deleted Wafer Test Limits and Dice Characteristics Section ......5
Edits to Typical Performance Characteristics................................8
Edits to Macro-Model Figure........................................................ 15
Edits to Outline Dimensions......................................................... 17
Rev. F | Page 2 of 20
OP249
www.BDTIC.com/ADI
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VS = ±15 V, TA = 25°C, unless otherwise noted.
Table 1.
OP249A OP249F
Parameter Symbol Conditions
Min Typ Max Min Typ Max
Offset Voltage VOS 0.2 0.5 0.2 0.7 mV
Long Term Offset Voltage
1
VOS 0.8 1.0 mV
Offset Stability 1.5 1.5 µV/month
Input Bias Current IB VCM = 0 V, TA = 25°C 30 75 30 75 pA
Input Offset Current IOS VCM = 0 V, TA = 25°C 6 25 6 25 pA
Input Voltage Range
2
IVR 12.5 12.5 V
±11 ±11 V
−12.5 –12.5 V
Common-Mode Rejection CMR VCM = ±11 V 80 90 80 90 dB
Power-Supply Rejection Ratio PSRR VS = ± 4.5 V to ±18 V 12 31.6 12 50 µV/V
Large Signal Voltage Gain AVO VO = ±10 V, RL = 2 kΩ 1000 1400 500 1200 V/mV
Output Voltage Swing VO RL = 2 kΩ 12.5 12.5 V
±12.0 ±12.0 V
−12.5 –12.5 V
Short-Circuit Current Limit ISC
Output shorted to
ound
gr
36 36 mA
±20 ±50 ±20 ±50 mA
−33 –33 mA
Supply Current ISY No load, VO = 0 V 5.6 7.0 5.6 7.0 mA
Slew Rate SR RL = 2 kΩ, CL = 50 pF 18 22 18 22 V/µs
Gain Bandwidth Product
Settling Time tS 10 V step 0.01%
Phase Margin Θ
3
GBW 3.5 4.7 3.5 4.7 MHz
4
M
0 dB gain 55 55 Degrees
0.9 1.2 0.9 1.2 µs
Differential Input Impedance ZIN 1012||6 1012||6 Ω||pF
Open-Loop Output Resistance RO 35 35 Ω
Voltage Noise en p-p 0.1 Hz to 10 Hz 2 2 µV p-p
Voltage Noise Density en fO = 10 Hz 75 75 nV/√Hz
f
f
f
= 100 Hz 26 26 nV/√Hz
O
= 1 kHz 17 17 nV/√Hz
O
= 10 kHz 16 16 nV/√Hz
O
Current Noise Density in fO = 1 kHz 0.003 0.003 pA/√Hz
Voltage Supply Range VS ±4.5 ±15 ±18 ±4.5 ±15 ±18 V
1
Long-term offset voltage is guaranteed by a 1000 hour life test performed on three independent wafer lots at 125°C with LTPD of three.
2
Guaranteed by CMR test.
3
Guaranteed by design.
4
Settling time is sample tested.
Unit
Rev. F | Page 3 of 20
OP249
www.BDTIC.com/ADI
VS = ±15 V, TA = 25°C, unless otherwise noted.
Table 2.
OP249G
Parameter Symbol Conditions
Min Typ Max
Offset Voltage VOS 0.4 2.0 mV
Input Bias Current IB VCM = 0 V, TA = 25°C 40 75 pA
Input Offset Current IOS VCM = 0 V TA = 25°C 10 25 pA
Input Voltage Range
1
IVR 12.5 V
±11 V
−12.0 V
Common-Mode Rejection CMR VCM = ±11 V 76 90 dB
Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 12 50 µV/V
Large Signal Voltage Gain AVO VO = ±10 V; RL = 2 kΩ 500 1100 V/mV
Output Voltage Swing VO RL = 2 kΩ 12.5 V
±12.0 V
−12.5 V
Short-Circuit Current Limit ISC Output shorted to ground 36 mA
±20 ±50 mA
−33 mA
Supply Current ISY No load; VO = 0 V 5.6 7.0 mA
Slew Rate SR RL = 2 kΩ, CL = 50 pF 18 22 V/µs
Gain Bandwidth Product
2
GBW 4.7 MHz
Settling Time tS 10 V step 0.01% 0.9 1.2 µs
Phase Margin Θ
M
0 dB gain 55 Degree
Differential Input Impedance ZIN 1012||6 Ω||pF
Open-Loop Output Resistance RO 35 Ω
Voltage Noise en p-p 0.1 Hz to 10 Hz 2 V p-p
Voltage Noise Density en fO = 10 Hz 75 nV/√Hz
f
f
f
= 100 Hz 26 nV/√Hz
O
= 1 kHz 17 nV/√Hz
O
= 10 kHz 16 nV/√Hz
O
Current Noise Density in fO = 1 kHz 0.003 pA/√Hz
Voltage Supply Range VS ±4.5 ±15 ±18 V
1
Guaranteed by CMR test.
2
Guaranteed by design.
Unit
Rev. F | Page 4 of 20
OP249
www.BDTIC.com/ADI
VS = ±15 V, −40°C ≤ TA ≤ +85°C for F grade and −55°C ≤ TA ≤ +125°C for A grade, unless otherwise noted.
Table 3.
OP249A OP249F
Parameter Symbol Conditions
Offset Voltage VOS 0.12 1.0 0.5 1.1 mV
Offset Voltage Temperature Coefficient TCVOS 1 5 2.2 6 V/°C
Input Bias Current
Input Offset Current
Input Voltage Range
1
1
2
IB 4 20 0.3 4.0 nA
IOS 0.04 4 0.02 1.2 nA
IVR 12.5 12.5 V
±11 ±11 V
−12.5 −12.5 V
Common-Mode Rejection CMR VCM = ±11 V 76 110 80 90 dB
Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 5 50 7 100 V/V
Large Signal Voltage Gain AVO RL = 2 kΩ; VO = ±10 V 500 1400 250 1200 V/mV
Output Voltage Swing VO RL = 2 kΩ 12.5 12.5 V
±12 ±12 V
−12.5 −12.5 V
Supply Current ISY No load, VO = 0 V 5.6 7.0 5.6 7.0 mA
Offset Voltage VOS 1.0 3.6 mV
Offset Voltage Temperature Coefficient TCV
Input Bias Current
Input Offset Current
Input Voltage Range
1
1
2
IB 0.5 4.5 nA
IOS 0.04 1.5 nA
IVR 12.5 V
OS
6 25 µV/°C
±11 V
−12.5 V
Common-Mode Rejection CMR VCM = ±11 V 76 95 dB
Power Supply Rejection Ratio PSRR VS = ±4.5 V to ±18 V 10 100 µV/V
Large Signal Voltage Gain AVO RL = 2 kΩ; VO = ±10 V 250 1200 V/mV
Output Voltage Swing VO RL = 2 kΩ 12.5 V
±12.0 V
−12.5 V
Supply Current ISY No load, VO = 0 V 5.6 7.0 mA
1
TA = 85°C.
2
Guaranteed by CMR test.
Rev. F | Page 5 of 20
OP249
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Supply Voltage ±18 V
Input Voltage
Differential Input Voltage
Output Short-Circuit Duration Indefinite
Storage Temperature Range −65°C to +175°C
Operating Temperature Range
OP249A (Q) −55°C to +125°C
OP249F (Q) −40°C to +85°C
OP249G (N, R) −40°C to +85°C
Junction Temperature Range
OP249A (Q), OP249F (Q) −65°C to +175°C
OP249G (N, R) −65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
1
Absolute maximum ratings apply to packaged parts, unless otherwise noted.
2
For supply voltages less than ±18 V, the absolute maximum input voltage is
equal to the supply voltage.
1
2
2
Rating
±18 V
36 V
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.