Analog Devices OP184 284 484 b Datasheet

Precision Rail-to-Rail

1

2

3

4

8

7

6

5

OUT A

V+

NULL

NC

NULL

–IN A

+IN A

V–

OP184

NC = NO CONNECT

–

+

1

2

3

4

8

7

6

5

OP284

OUT B

–IN B

+IN B

V+

OUT A

–IN A

+IN A

V–

14

13

12

11

10

9

8

1

2

3

4

5

6

7

OP484

OUT A

–IN A

+IN A

V+

+IN B

–IN B

OUT B

OUT D

–IN D

+IN D

V–

+IN C

–IN C

OUT C

a

Input and Output Operational Amplifiers

FEATURES
Single-Supply Operation
Wide Bandwidth: 4 MHz
Low Offset Voltage: 65 V
Unity-Gain Stable
High Slew Rate: 4.0 V/s
Low Noise: 3.9 nV/√Hz

APPLICATIONS
Battery Powered Instrumentation
Power Supply Control and Protection
Telecom
DAC Output Amplifier
ADC Input Buffer

GENERAL DESCRIPTION

The OP184/OP284/OP484 are single, dual and quad single­supply, 4 MHz bandwidth amplifiers featuring rail-to-rail
inputs and outputs. They are guaranteed to operate from 3 to
36 (or ±1.5 to ±18) volts and will function with a single supply
as low as 1.5 volts.

These amplifiers are superb for single-supply applications
requiring both ac and precision dc performance. The combina­tion of bandwidth, low noise and precision makes the OP184/
OP284/OP484 useful in a wide variety of applications, including
filters and instrumentation.

Other applications for these amplifiers include portable telecom
equipment, power supply control and protection, and as amplifi­ers or buffers for transducers with wide output ranges. Sensors
requiring a rail-to-rail input amplifier include Hall effect, piezo
electric, and resistive transducers.

The ability to swing rail-to-rail at both the input and output
enables designers to build multistage filters in single-supply
systems and to maintain high signal-to-noise ratios.

The OP184/OP284/OP484 are specified over the HOT extended
industrial (–40°C to +125°C) temperature range. The single
and dual are available in 8-lead plastic DIP plus SO surface
mount packages. The quad OP484 is available in 14-lead plastic
DIPs and 14-lead narrow-body SO packages.

OP184/OP284/OP484

PIN CONFIGURATIONS

8-Lead Epoxy DIP

(P Suffix)

8-Lead SO

(S Suffix)

8-Lead Epoxy DIP

(P Suffix)

8-Lead SO

(S Suffix)

14-Lead Epoxy DIP

(P Suffix)

14-Lead Narrow-Body SO

(S Suffix)

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

OP184/OP284/OP484–SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

(@ VS = 5.0 V, VCM = 2.5 V, TA = 25C unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage “OP184/284E” Grade V

Offset Voltage “OP184/284F” Grade V

Offset Voltage “OP484E” Grade V

Offset Voltage “OP484F” Grade V

Input Bias Current I

Input Offset Current I

OS

OS

OS

OS

B

OS

(Note 1) 65 µV
–40°C ≤ T

≤ +125°C 165 µV

A

125 µV

–40°C ≤ T

≤ +125°C 350 µV

A

75 µV

–40°C ≤ T

≤ +125°C 175 µV

A

150 µV

–40°C ≤ T

≤ +125°C 450 µV

A

60 450 nA

–40°C ≤ T

≤ +125°C 600 nA

A

250nA

–40°C ≤ T

≤ +125°C50nA

A

Input Voltage Range 05V
Common-Mode Rejection Ratio CMRR V
Common-Mode Rejection Ratio CMRR V
Large Signal Voltage Gain A

VO

= 0 V to 5 V 60 dB

CM

= 1.0 V to 4.0 V, –40°C ≤ TA ≤ +125°C86 dB

CM

RL = 2 kΩ, 1 V ≤ VO ≤ 4 V 50 240 V/mV

= 2 kΩ, –40°C ≤ TA ≤ +125°C25 V/mV

R

L

Bias Current Drift ∆IB/∆T 150 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V
Output Voltage Low V
Output Current I

OH

OL

OUT

IL = 1.0 mA 4.85 V
IL = 1.0 mA 125 mV

±6.5 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = 2.0 V to 10 V, –40°C ≤ TA ≤ +125°C76 dB
Supply Current/Amplifier I
Supply Voltage Range V

SY

S

VO = 2.5 V, –40°C ≤ TA ≤ +125°C1.45mA

336V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 1.65 2.4 V/µs
Settling Time t

S

To 0.01%, 1.0 V Step 2.5 µs

Gain Bandwidth Product GBP 3.25 MHz
Phase Margin Øo 45 Degrees

NOISE PERFORMANCE

Voltage Noise eN p-p 0.1 Hz to 10 Hz 0.3 µV p-p
Voltage Noise Density e
Current Noise Density i

NOTES

1

Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Specifications subject to change without notice.

N

N

f = 1 kHz 3.9 nV/√Hz

0.4 pA/√Hz

–2–

REV. B

OP184/OP284/OP484

ELECTRICAL CHARACTERISTICS

(@ VS = 3.0 V, VCM = 1.5 V, TA = 25C unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage “OP184/284E” Grade V

Offset Voltage “OP184/284F” Grade V

Offset Voltage “OP484E” Grade V

Offset Voltage “OP484F” Grade V

Input Bias Current I

Input Offset Current I

OS

OS

OS

OS

B

OS

(Note 1) 65 µV
–40°C ≤ T

≤ +125°C 165 µV

A

125 µV

–40°C ≤ T

≤ +125°C 350 µV

A

100 µV

–40°C ≤ T

≤ +125°C 200 µV

A

150 µV

–40°C ≤ T

≤ +125°C 450 µV

A

60 450 nA

–40°C ≤ T

≤ +125°C 600 nA

A

–40°C ≤ TA ≤ +125°C50nA

Input Voltage Range 03V
Common-Mode Rejection Ratio CMRR V

= 0 V to 3 V 60 dB

CM

Common-Mode Rejection Ratio CMRR VCM = 0 V to 3 V, –40°C ≤ TA ≤ +125°C56 dB

OUTPUT CHARACTERISTICS

Output Voltage High V
Output Voltage Low V

OH

OL

IL = 1.0 mA 2.85 V
IL = 1.0 mA 125 mV

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±1.25 V to ±1.75 V 76 dB
Supply Current/Amplifier I

SY

VO = 1.5 V, –40°C ≤ TA ≤ +125°C1.35 mA

DYNAMIC PERFORMANCE

Gain Bandwidth Product GBP 3 MHz

NOISE PERFORMANCE

Voltage Noise Density e

NOTES

1

Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Specifications subject to change without notice.

N

f = 1 kHz 3.9 nV/√Hz

REV. B

–3–

OP184/OP284/OP484

ELECTRICAL CHARACTERISTICS

(@ VS = 15.0 V, VCM = 0 V, TA = 25C unless otherwise noted.)

Parameter Symbol Conditions Min Typ Max Unit

INPUT CHARACTERISTICS

Offset Voltage “OP184/284E” Grade V

Offset Voltage “OP284F” Grade V

Offset Voltage “OP484E” Grade V

OS

OS

OS

(Note 1) 100 µV
–40°C ≤ T

≤ +125°C 200 µV

A

175 µV

–40°C ≤ T

≤ +125°C 375 µV

A

150 µV

–40°C ≤ TA ≤ +125°C 300 µV

Offset Voltage “OP484F” Grade V

Input Bias Current I

Input Offset Current I

B

OS

OS

–40°C ≤ T

–40°C ≤ T

≤ +125°C 500 µV

A

≤ +125°C 575 nA

A

–40°C ≤ TA ≤ +125°C50nA

250 µV

80 450 nA

Input Voltage Range –15 +15 V
Common-Mode Rejection Ratio CMRR V
Common-Mode Rejection Ratio CMRR V
Large-Signal Voltage Gain A

Offset Voltage Drift “E” Grade ∆V

VO

/∆T 0.2 2.00 µV/°C

OS

= –14.0 V to +14.0 V, –40°C ≤ TA ≤ +125°C86 90 dB

CM

= –15.0 V to +15.0 V 80 dB

CM

RL = 2 kΩ, –10 V ≤ VO ≤ 10 V 150 1000 V/mV
R

= 2 kΩ, –40°C ≤ TA ≤ +125°C75 V/mV

L

Bias Current Drift ∆IB/∆T 150 pA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V
Output Voltage Low V
Output Current I

OH

OL

OUT

IL = 1.0 mA 14.8 V
IL = 1.0 mA –14.875 V

±10 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR V
Supply Current/Amplifier I
Supply Current/Amplifier I

SY

SY

= ±2.0 V to ±18 V, –40°C ≤ TA ≤ +125°C90 dB

S

VO = 0 V, –40°C ≤ TA ≤ +125°C 2.0 mA
VS = ±18 V, –40°C ≤ TA ≤ +125°C2.25mA

DYNAMIC PERFORMANCE

Slew Rate SR R
Full-Power Bandwidth BW
Settling Time t

p

S

= 2 kΩ 2.4 4.0 V/µs

L

1% Distortion, RL = 2 kΩ, VO = 29 V p-p 35 kHz
To 0.01%, 10 V Step 4 µs

Gain Bandwidth Product GBP 4.25 MHz
Phase Margin Øo 50 Degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Input Offset Voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power.

Specifications subject to change without notice.

p-p 0.1 Hz to 10 Hz 0.3 µV p-p

N

N

N

f = 1 kHz 3.9 nV/√Hz

0.4 pA/√Hz

–4–

REV. B

OP184/OP284/OP484

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Differential Input Voltage
Output Short-Circuit Duration to GND

2

. . . . . . . . . . . . . . . . . . . . . . ±0.6 V

3

. . . . . . . . Indefinite

Storage Temperature Range

P, S Packages . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

OP184/OP284/OP484E, F . . . . . . . . . . . . –40°C to +125°C

Junction Temperature Range

P, S Packages . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature Range (Soldering 60 sec) . . . . . . . . . 300°C

Package Type 

3

JA



JC

Unit

8-Lead Plastic DIP (P) 103 43 °C/W
8-Lead SOIC (S) 158 43 °C/W
14-Lead Plastic DIP (P) 83 39 °C/W
14-Lead SOIC (S) 92 27 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts unless

otherwise noted.

2

For input voltages greater than 0.6 volts, the input current should be limited to less

than 5 mA to prevent degradation or destruction of the input devices.

3

θJA is specified for the worst case conditions; i.e., θ

for cerdip and P-DIP packages; θ
for SOIC package.

is specified for device soldered in circuit board

JA

is specified for device in socket

JA

ORDERING GUIDE

Temperature Package Package

Model Range Description Option

OP184EP* –40°C to +125°C 8-Lead Plastic DIP N-8
OP184ES –40°C to +125°C 8-Lead SOIC R-8
OP184FP* –40°C to +125°C 8-Lead Plastic DIP N-8
OP184FS –40°C to +125°C 8-Lead SOIC R-8

OP284EP –40°C to +125°C 8-Lead Plastic DIP N-8
OP284ES –40°C to +125°C 8-Lead SOIC R-8

*

OP284FP

–40°C to +125°C 8-Lead Plastic DIP N-8

OP284FS –40°C to +125°C 8-Lead SOIC R-8
OP484ES –40°C to +125°C 14-Lead SOIC R-14

OP484FP –40°C to +125°C 14-Lead Plastic DIP N-14
OP484FS –40°C to +125°C 14-Lead SOIC R-14

NOTES
*Not for new design; obsolete April 2002.

TP

CB1 N+

JB1

P+M

QB1

R4

QL1

QL2

QB3

Q1

R3

Q3

RB2

R1

RB1

–IN +IN

QB2

JB2

Q2

QB5

Q11

Q7

Q5

QB4

R2

CC1

Q8

Q9

Q6

QB7

R5

QB6

Q4

Figure 3. Simplified Schematic

Q12

Q10

V

CC

RB4

RB3

QB9

QB10

CC2

CFF

R6

R7

QB8

Q13

Q14

R8

R11

Q15

C

R10

Q17

Q18

OUT

V

EE

O

Q16

R9

REV. B

–5–

OP184/OP284/OP484–Typical Performance Characteristics

300

VS = 3V

270

TA = 25C

240

210

180

150

120

QUANTITY

= 1.5V

V

CM

90

60

30

0

–100 –75 100–50 –25 0 25 50 75

INPUT OFFSET VOLTAGE – V

TPC 1. Input Offset Voltage
Distribution

300

250

200

150

QUANTITY

100

50

0

0 0.25 1.50.50 0.75 1.0 1.25

OFFSET VOLTAGE DRIFT, TCVOS – µV/C

VS = 5V
–40C ⱕ T

ⱕ +125C

A

TPC 4. Input Offset Voltage Drift
Distribution

300

VS = 5V

270

= 25C

T

A

240

VCM = 2.5V

210

180

150

120

QUANTITY

90

60

30

0

–100 –75 100

–50 –25 0 25 50 75

INPUT OFFSET VOLTAGE – V

TPC 2. Input Offset Voltage
Distribution

300

250

200

150

QUANTITY

100

50

0

0 0.25 1.50.50 0.75 1.0 1.25

OFFSET VOLTAGE DRIFT, TCVOS – µV/C

VS = ±15V
–40C ⱕ T

ⱕ +125C

A

TPC 5. Input Offset Voltage Drift
Distribution

200

VS = ±15V

175

T

= 25C

A

150

125

100

QUANTITY

75

50

25

0

–125 –100 125

–25 25

–75 –50 0 50 75 100

INPUT OFFSET VOLTAGE – V

TPC 3. Input Offset Voltage
Distribution

–40

–45

–50

–55

–60

–65

–70

INPUT BIAS CURRENT – nA

–75

–80

–40 12525 85

TEMPERATURE – C

VCM = VS/2

VS = 5V

VS = 15V

TPC 6. Bias Current vs.
Temperature

500

400

300

200

100

0

–100

–200

–300

INPUT BIAS CURRENT – nA

–400

–500

–15 –10 15–5 5 100

COMMON MODE VOLTAGE – V

VS = 15V

TPC 7. Input Bias Current vs.
Common-Mode Voltage

1,000

VS = 15V

SOURCE

100

OUTPUT VOLTAGE – mV

10

0.01 0.1 10
LOAD CURRENT – mA

SINK

1

TPC 8. Output Voltage to Supply
Rail vs. Load Current

1.2

1.1

1.0

0.9

0.8

0.7

0.6

SUPPLY CURRENT/AMPLIFIER – mA

0.5
–40 12525 85

TEMPERATURE – C

VS = 15V

VS = 5V

VS = 3V

TPC 9. Supply Current vs.
Temperature

–6–

REV. B