Analog Devices OP183, OP283 Datasheet

5 MHz Single-Supply

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OP183

NULL

–IN

+IN

V–

NC = NO CONNECT

NC

V+

OUT

NULL

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OP183

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OP283

OUTA

–INA

+INA

V–

V+

OUTB

–INB

+INB

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OP283

a

FEATURES
Single-Supply – +3 Volts to +36 Volts
Wide Bandwidth – 5 MHz
Low Offset Voltage – <1 mV
High Slew Rate – 10 V/ms
Low Noise – 10 nV/√
Unity-Gain Stable
Input and Output Range Includes GND
No Phase Reversal

APPLICATIONS
Multimedia
Telecom
ADC Buffers
Wide Band Filters
Microphone Preamplifiers

GENERAL DESCRIPTION

The OP183 is a single-supply, 5 MHz bandwidth amplifier with
slew rates of 10 V/µs. The OP283 is a dual version. Both can
operate from voltages as low as 3 volts and up to 36 volts. This
combination of slew rate and bandwidth yields excellent single­supply ac performance making them ideally suited for telecom and
multimedia audio applications.

Hz

Operational Amplifiers

PIN CONNECTIONS

8-Lead Narrow-Body SO

(S Suffix)

8-Lead Narrow-Body SO

(S Suffix)

OP183/OP283

8-Lead Epoxy DIP

(P Suffix)

8-Lead Epoxy DIP

(P Suffix)

In addition to its ac characteristics, the OP183 family provides
good dc performance with guaranteed 1 mV offset. Noise is a
respectable 10 nV/√Hz. Supply current is only 1.2 mA per amplifier.

These amplifiers are well suited for single-supply applications that
require moderate bandwidths even when used in high gain configu­rations. This makes them useful in filters and instrumentation.
Their output drive capability and very wide full power bandwidth
make them a good choice for multimedia headphone drivers or
microphone input amplifiers.

The OP183 and OP283 are available in 8-pin plastic DIP and SO-8
surface mount packages. They are specified over the extended
industrial (–40°C to +85°C) temperature range.

REV. B

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood. MA 02062-9106, U.S.A.
Tel: [phone] Fax: [phone]

OP183/OP283–SPECIFICA TIONS

ELECTRICAL CHARACTERISTICS

(@ VS = +5.0 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I

OS

B

OS

VCM = 2.5 V, V
–40°C ≤ TA ≤ +85°C 1.25 mV
VCM = 2.5 V, V
–40°C ≤ TA ≤ +85°C 430 750 nA
VCM = 2.5 V, V
–40°C ≤ TA ≤ +85°C11±50 nA

= 2.5 V, 0.025 1.0 mV

OUT

= 2.5 V, 350 600 nA

OUT

= 2.5 V, nA

OUT

Input Voltage Range 0 +3.5 V
Common-Mode Rejection Ratio CMRR VCM = 0 to 3.5 V

–40°C ≤ TA ≤ +85°C 70 104 dB
Large Signal Voltage Gain A
Offset Voltage Drift ∆VOS/∆T4µV/°C

VO

RL = 2 kΩ, 0.2 ≤ VO ≤ 3.8 V 100 V/mV
Bias Current Drift ∆IB/∆T –1.6 nA/°C

OUTPUT CHARACTERISTICS

Output Voltage High V
Output Voltage Low V
Short Circuit Limit I

OH
OL

SC

RL = 2 kΩ to GND +4.0 4.22 V

RL = 2 kΩ to GND 50 75 mV

Source 25 mA

Sink 30 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = +4 V to +6 V,

–40°C ≤ TA ≤ +85°C 70 104 dB
Supply Current/Amplifier I

Supply Voltage Range V

SY

S

VO = 2.5 V,

–40°C ≤ TA ≤ +85°C 1.2 1.5 mA

+3 ±18 V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 510 V/µs
Full-Power Bandwidth BWp 1% Distortion >50 kHz
Settling Time t
Gain Bandwidth Product GBP 5 MHz

S

To 0.01% 1.5 µs
Phase Margin φm 46 Degrees

NOISE PERFORMANCE

Voltage Noise en
Voltage Noise Density e
Current Noise Density i

p-p

n

n

0.1 Hz to 10 Hz 2 µV p-p

f = 1 kHz, VCM = 2.5 V 10 nV/√Hz

0.4 pA/√Hz

ELECTRICAL CHARACTERISTICS

(@ VS = +3.0 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I

OS

B

OS

VCM = 1.5 V, V

–40°C ≤ TA ≤ +85°C 1.25 mV

VCM = 1.5 V, V

–40°C ≤ TA ≤ +85°C 750 nA

VCM = 1.5 V, V

–40°C ≤ TA ≤ +85°C11±50 nA

= 1.5 V, 0.3 1.0 mV

OUT

= 1.5 V, 350 600 nA

OUT

= 1.5 V, nA

OUT

Input Voltage Range 0 +1.5 V
Common-Mode Rejection Ratio CMRR VCM = 0 V to 1.5 V,

–40°C ≤ TA ≤ +85°C 70 103 dB
Large Signal Voltage Gain A

VO

RL = 2 kΩ, 0.2 ≤ VO ≤ 1.8 V 100 260 V/mV

OUTPUT CHARACTERISTICS

Output Voltage High V
Output Voltage Low V
Short Circuit Limit I

OH
OL

SC

RL = 2 kΩ to GND +2.0 2.25 V

RL = 2 kΩ to GND 90 125 mV

Source 25 mA

Sink 30 mA

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = +2.5 V to +3.5 V,

–40°C ≤ TA ≤ +85°C 60 113 dB
Supply Current/Amplifier I

SY

–40°C ≤ TA ≤ +85°C, VO = 1.5 V 1.2 1.5 mA

DYNAMIC PERFORMANCE

Gain Bandwidth Product GBP 5 MHz

NOISE PERFORMANCE

Voltage Noise Density e

n

f = 1 kHz, VCM = 1.5 V 10 nV/√Hz

–2–

REV. B

OP183/OP283

ELECTRICAL CHARACTERISTICS

(@ VS = 615.0 V, TA = +258C unless otherwise noted)

Parameter Symbol Conditions Min Typ Max Units

INPUT CHARACTERISTICS

Offset Voltage V
Input Bias Current I
Input Offset Current I

OS

–40°C ≤ T

B

–40°C ≤ T

OS

–40 ≤ TA ≤ +85°C11±50 nA

≤ +85°C 1.25 mV

A

≤ +85°C 400 750 nA

A

0.01 1.0 mV
300 600 nA

Input Voltage Range –15 +13.5 V
Common-Mode Rejection Ratio CMRR VCM = –15 V to +13.5 V,

≤ +85°C7086dB

A

Large Signal Voltage Gain A
Offset Voltage Drift ∆V
Bias Current Drift ∆I
Long Term Offset Voltage V

–40°C ≤ T

VO

/∆T3µV/°C

OS

/∆T –1.6 nA/°C

B

OS

RL = 2 kΩ 100 1000 V/mV

Note 1 1.5 mV

OUTPUT CHARACTERISTICS

Output Voltage High V
Output Voltage Low V
Short-Circuit Limit I

OH
OL

SC

RL = 2 kΩ to GND, –40°C ≤ TA ≤ +85°C +13.9 14.1 V
RL = 2 kΩ to GND, –40°C ≤ TA ≤ +85°C –14.05 –13.9 V
Source 30 mA
Sink 50 mA

Open -Loop Output Impedance Z

OUT

f = 1 MHz, AV = +1 15 Ω

POWER SUPPLY

Power Supply Rejection Ratio PSRR VS = ±2.5 V to ±18 V,
Supply Current/Amplifier I
Supply Voltage Range V

–40°C ≤ T

SY

VS = ±18 V, VO = 0 V,
–40°C ≤ T

S

≤ +85°C 70 112 dB

A

≤ +85°C 1.2 1.75 mA

A

+3 ±18 V

DYNAMIC PERFORMANCE

Slew Rate SR RL = 2 kΩ 10 15 V/µs
Full-Power Bandwidth BW
Settling Time t

S

p

1% Distortion 50 kHz

To 0.01% 1.5 µs
Gain Bandwidth Product GBP 5 MHz
Phase Margin φm 56 degrees

NOISE PERFORMANCE

Voltage Noise e
Voltage Noise Density e
Current Noise Density i

NOTES

1

Long term offset voltage is guaranteed by a 1000 hour life test performed on three independent lots at +125°C, with an LTPD of 1.3.

Specifications subject to change without notice.

WAFER TEST LIMITS

n p-p
n

n

(@ VS = +5.0 V, TA = +258C unless otherwise noted)

0.1 Hz to 10 Hz 2 µV p-p

f = 1 kHz 10 nV/√Hz

0.4 pA/√Hz

Parameter Symbol Conditions Limit Units

Offset Voltage V
Input Bias Current I
Input Offset Current I

OS
B
OS

Common-Mode Rejection CMRR V

VS = ±15 V, VO = 0 V 1.0 mV max
VCM = 2.5 V ±600 nA max
VCM = 2.5 V ±50 nA max

= 0 V to 3.5 V 70 dB min

CM

Power Supply Rejection Ratio PSRR V = ±2.5 V to ±18 V 70 dB min
Large Signal Voltage Gain A
Output Voltage High V
Output Voltage Low V
Supply Current/Amplifier I

NOTE
Electrical tests and wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard
product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

VO

OH

OL
SY

REV.B

RL = 2 kΩ, 0.2 ≤ VO ≤ 3.8 V 100 V/mV min
RL = 2 kΩ 4.0 V min
RL = 2 kΩ 75 mV max
VS = ±15 V, VO = 0 V, RL = ∞ 1.5 mA max

–3–

OP183/OP283

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V

2

Differential Input Voltage

. . . . . . . . . . . . . . . . . . . . . . . . . . . ±7V

Output Short-Circuit Duration to GND . . . . . . . . . . . . Indefinite

Storage Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Operating Temperature Range

OP183/OP283G . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C

Junction Temperature Range

P, S Package . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C

Lead Temperature Range (Soldering 60 Sec) . . . . . . . . . . +300°C

Package Type θ

3

JA

θ

JC

Units

8-Pin Plastic DIP (P) 103 43 °C/W
8-Pin SOIC (S) 158 43 °C/W

NOTES

1

Absolute maximum ratings apply to both DICE and packaged parts, unless

otherwise noted.

2

For supply voltages less than ±7 V, the absolute maximum input voltage is equal

to the supply voltage. Maximum input current should not exceed 2 mA.

3

θJA is specified for the worst case conditions, i.e., θJA is specified for device in socket

for P-DIP packages; θJA is specified for device soldered in circuit board for SOIC
packages.

ORDERING GUIDE

DICE CHARACTERISTICS

V+ OUT NULL

NULL

–IN IN+ V–

OP183 Die Size 0.058 X 0.063 Inch, 3,717 Sq. Mils
Substrate (Die Backside) Is Connected to V–.
Transistor Count, 30.

V+ OUTB –INB

+INB

Temperature Package Package

Model Range Description Option

OP183GP –40°C to +85°C 8-Pin Plastic DIP N-8
OP183GS –40°C to +85°C 8-Pin SOIC SO-8

OP283GP –40°C to +85°C 8-Pin Plastic DIP N-8
OP283GS –40°C to +85°C 8-Pin SOIC SO-8

OUTA –INA V–

+INA

OP283 Die Size 0.063 X 0.092 Inch, 5,796 Sq. Mils
Substrate (Die Backside) Is Connected to V–.
Transistor Count, 55.

–4–

REV. B