Analog Devices AD674BBR, AD674BBD, AD674BAR, AD674BTD, AD674BKN Datasheet

...
Complete 12-Bit
a
FEATURES Complete Monolithic 12-Bit A/D Converters with
Reference, Clock, and Three-State Output Buffers Industry Standard Pinout High Speed Upgrades for AD574A 8- and 16-Bit Microprocessor Interface 8 s (Max) Conversion Time (AD774B) 15 s (Max) Conversion Time (AD674B) 5 V, 10 V, 0 V–10 V, 0 V–20 V Input Ranges Commercial, Industrial, and Military Temperature
Range Grades MIL-STD-883-Compliant Versions Available
5V SUPPLY
V
DATA MODE SELECT
SHORT CYCLE A
READ/CONVERT R/C
ANALOG COMMON
REFERENCE INPUT
–12V/–15V SUPPLY
LOGIC
CHIP SELECT
BYTE ADDRESS/
CHIP ENABLE
12V/15V SUPPLY
10V REFERENCE
BIPOLAR OFFSET
V
REF OUT
REF IN
V
BIPOFF
10V SPAN INPUT
10V
20V SPAN INPUT
20V
A/D Converters
*
AD674B

FUNCTIONAL BLOCK DIAGRAM

1
2
3
CS
4
0
5
6
CE
7
CC
8
9
AC
10
11
EE
12
13
IN
14
IN
10V REF
199.95 k
VO LTAG E
DIVIDER
CONTROL
CLOCK SAR
COMP
+
I DAC
I REF
+
DAC
N
AD674B/AD774B
V
EE
/AD774B
MSB
N Y B
3
B L
S
E
T A
12
A
T E
N Y
O
B
U
B
T
L
P
E
U T
B
N
B
Y
U
B
F
B
F
L
E
E
R S
C
LSB
STATUS
28
STS
27
DB11 (MSB)
26
DB10
25
DB9
24
DB8
23
DB7
22
DB6
21
DB5
20
DB4
19
DB3
18
DB2
17
DB1
16
DB0 (LSB)
DIGITAL
15
COMMON DC
*
DIGITAL DATA OUTPUTS

PRODUCT DESCRIPTION

The AD674B and AD774B are complete 12-bit successive­approximation analog-to-digital converters with three-state output buffer circuitry for direct interface to 8- and 16-bit microprocessor busses. A high-precision voltage reference and clock are included on chip, and the circuit requires only power supplies and control signals for operation.
The AD674B and AD774B are pin-compatible with the indus­try standard AD574A, but offer faster conversion time and bus­access speed than the AD574A and lower power consumption. The AD674B converts in 15 µs (maximum) and the AD774B converts in 8 µs (maximum).
The monolithic design is implemented using Analog Devices’ BiMOS II process allowing high-performance bipolar analog circuitry to be combined on the same die with digital CMOS logic. Offset, linearity, and scaling errors are minimized by active laser trimming of thin-film resistors.
Five different grades are available. The J and K grades are specified for operation over the 0°C to 70°C temperature range. The A and B grades are specified from –40°C to +85°C, the T grade is specified from –55°C to +125°C. The J and K grades are available in a 28-lead plastic DIP or 28-lead SOIC. All other grades are available in a 28-lead hermetically sealed ceramic DIP.

PRODUCT HIGHLIGHTS

1. Industry Standard Pinout: The AD674B and AD774B use the pinout established by the industry standard AD574A.
2. Analog Operation: The precision, laser-trimmed scaling and bipolar offset resistors provide four calibrated ranges: 0 V to 10 V and 0 V to 20 V unipolar; –5 V to +5 V and –10 V to +10 V bipolar. The AD674B and AD774B operate on +5 V and ± 12 V or ± 15 V power supplies.
3. Flexible Digital Interface: On-chip multiple-mode three-state output buffers and interface logic allow direct connection to most microprocessors. The 12 bits of output data can be read either as one 12-bit word or as two 8-bit bytes (one with 8 data bits, the other with 4 data bits and 4 trailing zeros).
4. The internal reference is trimmed to 10.00 V with 1% maxi­mum error and 10 ppm/°C typical temperature coefficient. The reference is available externally and can drive up to
2.0 mA beyond the requirements of the converter and bipo­lar offset resistors.
5. The AD674B and AD774B are available in versions compli­ant with MIL-STD-883. Refer to the Analog Devices Mili­tary Products Databook or current AD674B/AD774B/883B data sheet for detailed specifications.
*Protected by U.S. Patent Nos. 4,250,445; 4,808,908; RE30586.
REV. C
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002
(T
AD674B/AD774B–SPECIFICATIONS
V
= +5 V 10%, VEE = –15 V 10% or –12 V 5%, unless otherwise noted.)
LOGIC
MIN
to T
with VCC = +15 V 10% or +12 V 5%,
MAX
J Grade K Grade A Grade B Grade T Grade
Model (AD674B or AD774B) Min Typ Max Min Typ Max Min Typ Max Min Typ Max Min Typ Max Unit
RESOLUTION 12 12 12 12 12 Bits
LINEARITY ERROR @ 25°C 1 1/2 1 1/2 1/2 LSB
T
MIN
to T
MAX
1 1/2 1 1/2 1 LSB
DIFFERENTIAL LINEARITY ERROR
(Minimum Resolution for Which No Missing Codes are Guaranteed) 12 12 12 12 12 Bits
UNIPOLAR OFFSET1 @ 25°C 2 2 2 2 2 LSB
BIPOLAR OFFSET1 @ 25°C 6 3 6 3 3 LSB
FULL-SCALE CALIBRATION ERROR
1, 2
@ 25°C (with Fixed 50 Resistor from REF OUT to REF IN) 0.1 0.25 0.1 0.125 0.1 0.25 0.1 0.125 0.1 0.125 % of FS
TEMPERATURE RANGE 0 70 0 70 –40 +85 –40 +85 –55 +125 °C
TEMPERATURE DRIFT
3
(Using Internal Reference)
Unipolar 2 1 2 1 1 LSB Bipolar Offset 2 1 2 1 2 LSB Full-Scale Calibration 6 2 8 5 7 LSB
POWER SUPPLY REJECTION
Max Change in Full-Scale Calibration
VCC = +15 V ± 1.5 V or +12 V ± 0.6 V 2 1 2 1 1 LSB V
= +5 V ± 0.5 V 1/2 1/2 1/2 1/2 1/2 LSB
LOGIC
VEE = –15 V ± 1.5 V or –12 V ± 0.6 V 2 1 2 1 1 LSB
ANALOG INPUT
Input Ranges
Bipolar –5 +5 –5 +5 –5 +5 –5 +5 –5 +5 V
–10 +10 –10 +10 –10 +10 –10 +10 –10 +10 V
Unipolar 0 10 0 10 0 10 0 10 0 10 V
0 20 0 20 0 20 0 20 0 20 V
Input Impedance
10 V Span 3 5 735 735 735 735 7 k 20 V Span 6 10 14 6 10 14 6 10 14 6 10 14 6 10 14 k
POWER SUPPLIES
Operating Range
V V V
LOGIC
CC
EE
4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 V
11.4 16.5 11.4 16.5 11.4 16.5 11.4 16.5 11.4 16.5 V –16.5 –11.4 –16.5 –11.4 –16.5 –11.4 –16.5 –11.4 –16.5 –11.4 V
Operating Current
I
LOGIC
I
CC
I
EE
3.5 7 3.5 7 3.5 7 3.5 7 3.5 7 mA
3.5 7 3.5 7 3.5 7 3.5 7 3.5 7 mA 10 14 10 14 10 14 10 14 10 14 mA
POWER CONSUMPTION 220 375 220 375 220 375 220 375 220 375 mW
175 175 175 175 175 mW
INTERNAL REFERENCE VOLTAGE 9.9 10.0 10.1 9.9 10.0 10.1 9.9 10.0 10.1 9.9 10.0 10.1 9.9 10.0 10.1 V
Output Current
(Available for External Loads) 2.0 2.0 2.0 2.0 2.0 mA
(External Load Should Not
Change During the Conversion)
NOTES
1
Adjustable to zero.
2
Includes internal voltage reference error.
3
Maximum change from 25°C value to the value at T
4
Tested with REF OUT tied to REF IN through 50 resistor, VCC = +16.5 V, VEE = –16.5 V, V
5
Tested with REF OUT tied to REF IN through 50 resistor, VCC = +12 V, VEE = –12 V, V
Specifications subject to change without notice. Specifications shown in boldface are tested on all devices at final electrical test at T max specifications are guaranteed, although only those shown in boldface are tested.
MIN
or T
MAX
.
, 25°C, and T
MIN
= +5.5 V, and outputs in high-Z mode.
LOGIC
= +5 V, and outputs in high-Z mode.
LOGIC
. Results from those tests are used to calculate outgoing quality levels. All min and
MAX
4
5
–2–
REV. C
t
HEC
t
HSC
t
SSC
t
HRC
t
SRC
t
SAC
t
HAC
t
C
t
DSC
CE
CS
R/C
A
0
STS
DB11 – DB0
HIGH
IMPEDANCE
AD674B/AD774B
(For all grades T
DIGITAL SPECIFICATIONS
VEE = –15 V 10% or –12 V 5%, unless otherwise noted.)
Parameter Test Conditions Min Max Unit
LOGIC INPUTS V
IH
V
IL
I
IH
I
IL
C
IN
High Level Input Voltage 2.0 V Low Level Input Voltage –0.5 +0.8 V High Level Input Current VIN = V Low Level Input Current VIN = 0 V –10 +10 µA Input Capacitance 10 pF
LOGIC OUTPUTS V
OH
V
OL
I
OZ
C
OZ
High Level Output Voltage IOH = 0.5 mA 2.4 V Low Level Output Voltage IOL = 1.6 mA 0.4 V High-Z Leakage Current VIN = 0 to V High-Z Output Capacitance 10 pF
(For all grades T
SWITCHING SPECIFICATIONS
CONVERTER START TIMING (Figure 1)
J, K, A, B Grades T Grade
Parameter Symbol Min Typ Max Min Typ Max Unit
Conversion Time
8-Bit Cycle (AD674B) t 12-Bit Cycle (AD674B) t 8-Bit Cycle (AD774B) t
12-Bit Cycle (AD774B) t STS Delay from CE t CE Pulsewidth t
CS to CE Setup t CS Low During CE High t
R/C to CE Setup t R/C LOW During CE High t A0 to CE Setup t A0 Valid During CE High t
C
C
C
C
DSC
HEC
SSC
HSC
SRC
HRC
SAC
HAC
READ TIMING—FULL CONTROL MODE (Figure 2)
Parameter Symbol Min Typ Max Min Typ Max Unit
Access Time
CL = 100 pF t Data Valid After CE Low t
Output Float Delay t CS to CE Setup t R/C to CE Setup t A0 to CE Setup t CS Valid After CE Low t R/C High After CE Low t A0 Valid After CE Low t
NOTES
1
tDD is measured with the load circuit of Figure 3a and is defined as the time required
for an output to cross 0.4 V or 2.4 V.
2
0°C to T
3
At –40°C.
4
At –55°C.
5
tHL is defined as the time required for the data lines to change 0.5 V when loaded with
the circuit of Figure 3b.
Specifications shown in boldface are tested on all devices at final electrical test with
MAX
.
worst case supply voltages at T to calculate outgoing quality levels. All min and max specifications are guaranteed, although only those shown in boldface are tested. Specifications subject to change without notice.
REV. C
DD
HD
HL
SSR
SRR
SAR
HSR
HRR
HAR
MIN
6810 6810 µs 91215 91215 µs 456 456 µs 6 7.3 8 6 7.3 8 µs
50 50 ns 50 50 ns 50 50 ns 50 50 ns 50 50 ns 00ns 50 50 ns
J, K, A, B Grades T Grade
1
5
25 20
2
3
50 50 ns 00ns 50 50 ns 00ns 00ns 50 50 ns
, 25°C, and T
V
LOGIC
200 225 ns
75 150 75 150 ns
150 150 ns
. Results from those tests are used
MAX
to T
MIN
with VCC = +15 V 10% or +12 V 5%, V
MAX
LOGIC
to T
MIN
LOGIC
with VCC = +15 V 10% or +12 V 5%,
MAX
–10 +10 µA
–10 +10 µA
LOGIC
+ 0.5 V
LOGIC
= +5 V 10%, VEE = –15 V 10% or –12 V 5%, unless otherwise noted.)
Figure 1. Convert Start Timing
CE
t
HSR
t
HAR
t
HD
DATA
VA LI D
t
DD
25 15
t
CS
R/C
A
0
2
4
ns ns
STS
DB11 – DB0
SSR
t
SRR
t
HIGH
IMPEDANCE
SAR
Figure 2. Read Cycle Timing
DB
N
3k
100pF
DB
N
HIGH-Z TO LOGIC 0HIGH-Z TO LOGIC 1
High-Z to Logic 1 High-Z to Logic 0
Figure 3a. Load Circuit for Access Time Test
DB
N
3k
LOGIC 1 TO HIGH-Z
100pF
DB
N
LOGIC 0 TO HIGH-Z
Logic 1 to High-Z Logic 0 to High-Z
Figure 3b. Load Circuit for Output Float Delay Test
–3–
= +5 V 10%,
t
HRR
HIGH
IMPEDANCE
t
HL
5V
3k
100pF
5V
3k
100pF
AD674B/AD774B
WARNING!
ESD SENSITIVE DEVICE
TIMING—STAND ALONE MODE (Figures 4a and 4b)
Parameter Symbol Min Typ Max Min Typ Max Unit
Data Access Time t Low R/C Pulsewidth t STS Delay from R/C t Data Valid After R/C Low t STS Delay After Data Valid t
High R/C Pulsewidth t
Specifications subject to change without notice.
J, K, A, B Grades T Grade
DDR
HRL
DS
HDR
HS
HRH
50 50 ns
25 25 ns 30 200 600 30 200 600 ns
150 150 ns
150 150 ns
200 225 ns

ABSOLUTE MAXIMUM RATINGS*

VCC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +16.5 V
to Digital Common . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
V
EE
V
to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +7 V
LOGIC
Analog Common to Digital Common . . . . . . . . . . . . . . . ± 1 V
Digital Inputs to Digital Common . . . –0.5 V to V
Analog Inputs to Analog Common . . . . . . . . . . . . V
LOGIC
EE
+0.5 V
to V
CC
20 VIN to Analog Common . . . . . . . . . . . . . . . . . . . . . . ±24 V
REF OUT . . . . . . . . . . . . . . . . . . Indefinite Short to Common
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Momentary Short to V
CC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 175°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . . 300°C
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
t
HRL
R/C
t
DS
STS
t
C
t
HDR
DB11–DB0
DATA
VA LI D
HIGH–Z
DATA VAL ID
Flgure 4a. Standalone Mode Timing Low Pulse R/
R/C
STS
DB11–DB0
t
HRH
t
DDRtHDR
HIGH–Z HIGH–Z
DATA
VA LI D
t
DS
t
C
t
HL
Figure 4b. Standalone Mode Timing High Pulse for R/
t
HS
C
C

ORDERING GUIDE

Conversion INL Package Package
MIN
to T
) Description Option
MAX
Model
l
Temperature Time (max) (T
AD674BJN 0°C to 70°C 15 µs ± 1 LSB Plastic DIP N-28 AD674BKN 0°C to 70°C 15 µs ± 1/2 LSB Plastic DIP N-28 AD674BAR –40°C to +85°C 15 µs ± 1 LSB Plastic SOIC R-28 AD674BBR –40°C to +85°C 15 µs ± 1/2 LSB Plastic SOIC R-28 AD674BAD –40°C to +85°C 15 µs ± 1 LSB Ceramic DIP D-28 AD674BBD –40°C to +85°C 15 µs ± 1/2 LSB Ceramic DIP D-28 AD674BTD –55°C to +125°C 15 µs ±1 LSB Ceramic DIP D-28 AD774BJN 0°C to 70°C8 µs ±1 LSB Plastic DIP N-28 AD774BKN 0°C to 70°C8 µs ± 1/2 LSB Plastic DIP N-28 AD774BAR –40°C to +85°C8 µs ±1 LSB Plastic SOIC R-28 AD774BBR –40°C to +85°C8 µs ± 1/2 LSB Plastic SOIC R-28 AD774BAD –40°C to +85°C8 µs ± 1 LSB Ceramic DIP D-28 AD774BBD –40°C to +85°C8 µs ± 1/2 LSB Ceramic DIP D-28 AD774BTD –55°C to +125°C8 µs ± 1 LSB Ceramic DIP D-28
NOTES
1
For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military
Products Databook or the current AD674B/ AD774B/883B data sheet.
2
N = Plastic DIP; D = Hermetic DIP; R = Plastic SOIC.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD674B/AD774B features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
2
REV. C–4–
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