Analog Devices AD674BBR, AD674BBD, AD674BAR, AD674BTD, AD674BKN, AD674BJN Datasheet
Specifications and Main Features
Frequently Asked Questions
User Manual
Complete 12-Bit
a
FEATURES
Complete Monolithic 12-Bit A/D Converters with
Reference, Clock, and Three-State Output Buffers
Industry Standard Pinout
High Speed Upgrades for AD574A
8- and 16-Bit Microprocessor Interface
8 s (Max) Conversion Time (AD774B)
15 s (Max) Conversion Time (AD674B)
5 V, 10 V, 0 V–10 V, 0 V–20 V Input Ranges
Commercial, Industrial, and Military Temperature
Range Grades
MIL-STD-883-Compliant Versions Available
5V SUPPLY
V
DATA MODE SELECT
SHORT CYCLE A
READ/CONVERT R/C
ANALOG COMMON
REFERENCE INPUT
–12V/–15V SUPPLY
LOGIC
12/8
CHIP SELECT
BYTE ADDRESS/
CHIP ENABLE
12V/15V SUPPLY
10V REFERENCE
BIPOLAR OFFSET
V
REF OUT
REF IN
V
BIPOFF
10V SPAN INPUT
10V
20V SPAN INPUT
20V
A/D Converters
*
AD674B
FUNCTIONAL BLOCK DIAGRAM
1
2
3
CS
4
0
5
6
CE
7
CC
8
9
AC
10
11
EE
12
13
IN
14
IN
10V
REF
199.95
k
VO LTAG E
DIVIDER
CONTROL
CLOCKSAR
COMP
–
+
I DAC
I REF
+
–
DAC
N
AD674B/AD774B
V
EE
/AD774B
MSB
N
Y
B
3
B
L
S
E
T
A
12
A
T
E
N
Y
O
B
U
B
T
L
P
E
U
T
B
N
B
Y
U
B
F
B
F
L
E
E
R
S
C
LSB
STATUS
28
STS
27
DB11 (MSB)
26
DB10
25
DB9
24
DB8
23
DB7
22
DB6
21
DB5
20
DB4
19
DB3
18
DB2
17
DB1
16
DB0 (LSB)
DIGITAL
15
COMMON DC
*
DIGITAL
DATA
OUTPUTS
PRODUCT DESCRIPTION
The AD674B and AD774B are complete 12-bit successiveapproximation analog-to-digital converters with three-state
output buffer circuitry for direct interface to 8- and 16-bit
microprocessor busses. A high-precision voltage reference and
clock are included on chip, and the circuit requires only power
supplies and control signals for operation.
The AD674B and AD774B are pin-compatible with the industry standard AD574A, but offer faster conversion time and busaccess speed than the AD574A and lower power consumption.
The AD674B converts in 15 µs (maximum) and the AD774B
converts in 8 µs (maximum).
The monolithic design is implemented using Analog Devices’
BiMOS II process allowing high-performance bipolar analog
circuitry to be combined on the same die with digital CMOS logic.
Offset, linearity, and scaling errors are minimized by active
laser trimming of thin-film resistors.
Five different grades are available. The J and K grades are
specified for operation over the 0°C to 70°C temperature range.
The A and B grades are specified from –40°C to +85°C, the T grade
is specified from –55°C to +125°C. The J and K grades are
available in a 28-lead plastic DIP or 28-lead SOIC. All other grades
are available in a 28-lead hermetically sealed ceramic DIP.
PRODUCT HIGHLIGHTS
1. Industry Standard Pinout: The AD674B and AD774B use
the pinout established by the industry standard AD574A.
2. Analog Operation: The precision, laser-trimmed scaling and
bipolar offset resistors provide four calibrated ranges: 0 V to
10 V and 0 V to 20 V unipolar; –5 V to +5 V and –10 V to
+10 V bipolar. The AD674B and AD774B operate on +5 V
and ± 12 V or ± 15 V power supplies.
3. Flexible Digital Interface: On-chip multiple-mode three-state
output buffers and interface logic allow direct connection to
most microprocessors. The 12 bits of output data can be
read either as one 12-bit word or as two 8-bit bytes (one with
8 data bits, the other with 4 data bits and 4 trailing zeros).
4. The internal reference is trimmed to 10.00 V with 1% maximum error and 10 ppm/°C typical temperature coefficient.
The reference is available externally and can drive up to
2.0 mA beyond the requirements of the converter and bipolar offset resistors.
5. The AD674B and AD774B are available in versions compliant with MIL-STD-883. Refer to the Analog Devices Military Products Databook or current AD674B/AD774B/883B
data sheet for detailed specifications.
*Protected by U.S. Patent Nos. 4,250,445; 4,808,908; RE30586.
REV. C
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
Tested with REF OUT tied to REF IN through 50 Ω resistor, VCC = +16.5 V, VEE = –16.5 V, V
5
Tested with REF OUT tied to REF IN through 50 Ω resistor, VCC = +12 V, VEE = –12 V, V
Specifications subject to change without notice.
Specifications shown in boldface are tested on all devices at final electrical test at T
max specifications are guaranteed, although only those shown in boldface are tested.
MIN
or T
MAX
.
, 25°C, and T
MIN
= +5.5 V, and outputs in high-Z mode.
LOGIC
= +5 V, and outputs in high-Z mode.
LOGIC
. Results from those tests are used to calculate outgoing quality levels. All min and
MAX
4
5
–2–
REV. C
t
HEC
t
HSC
t
SSC
t
HRC
t
SRC
t
SAC
t
HAC
t
C
t
DSC
CE
CS
R/C
A
0
STS
DB11 – DB0
HIGH
IMPEDANCE
AD674B/AD774B
(For all grades T
DIGITAL SPECIFICATIONS
VEE = –15 V 10% or –12 V 5%, unless otherwise noted.)
ParameterTest ConditionsMinMaxUnit
LOGIC INPUTS
V
IH
V
IL
I
IH
I
IL
C
IN
High Level Input Voltage2.0V
Low Level Input Voltage–0.5+0.8V
High Level Input CurrentVIN = V
Low Level Input CurrentVIN = 0 V–10+10µA
Input Capacitance10pF
LOGIC OUTPUTS
V
OH
V
OL
I
OZ
C
OZ
High Level Output VoltageIOH = 0.5 mA2.4V
Low Level Output VoltageIOL = 1.6 mA0.4V
High-Z Leakage CurrentVIN = 0 to V
High-Z Output Capacitance10pF
(For all grades T
SWITCHING SPECIFICATIONS
CONVERTER START TIMING (Figure 1)
J, K, A, B Grades T Grade
ParameterSymbol Min Typ Max Min Typ Max Unit
Conversion Time
8-Bit Cycle (AD674B) t
12-Bit Cycle (AD674B) t
8-Bit Cycle (AD774B) t
12-Bit Cycle (AD774B) t
STS Delay from CEt
CE Pulsewidtht
CS to CE Setupt
CS Low During CE Hight
R/C to CE Setupt
R/C LOW During CE High t
A0 to CE Setupt
A0 Valid During CE Hight
C
C
C
C
DSC
HEC
SSC
HSC
SRC
HRC
SAC
HAC
READ TIMING—FULL CONTROL MODE (Figure 2)
ParameterSymbol Min Typ Max Min Typ Max Unit
Access Time
CL = 100 pFt
Data Valid After CE Lowt
Output Float Delayt
CS to CE Setupt
R/C to CE Setupt
A0 to CE Setupt
CS Valid After CE Lowt
R/C High After CE Lowt
A0 Valid After CE Lowt
NOTES
1
tDD is measured with the load circuit of Figure 3a and is defined as the time required
for an output to cross 0.4 V or 2.4 V.
2
0°C to T
3
At –40°C.
4
At –55°C.
5
tHL is defined as the time required for the data lines to change 0.5 V when loaded with
the circuit of Figure 3b.
Specifications shown in boldface are tested on all devices at final electrical test with
MAX
.
worst case supply voltages at T
to calculate outgoing quality levels. All min and max specifications are guaranteed,
although only those shown in boldface are tested.
Specifications subject to change without notice.
REV. C
DD
HD
HL
SSR
SRR
SAR
HSR
HRR
HAR
MIN
68106810µs
9121591215µs
456456µs
67.3867.3 8µs
5050ns
5050ns
5050ns
5050ns
5050ns
00ns
5050ns
J, K, A, B Grades T Grade
1
5
25
20
2
3
5050ns
00ns
5050ns
00ns
00ns
5050ns
, 25°C, and T
V
LOGIC
200225 ns
7515075 150 ns
150150 ns
. Results from those tests are used
MAX
to T
MIN
with VCC = +15 V 10% or +12 V 5%, V
MAX
LOGIC
to T
MIN
LOGIC
with VCC = +15 V 10% or +12 V 5%,
MAX
–10+10µA
–10+10µA
LOGIC
+ 0.5V
LOGIC
= +5 V 10%, VEE = –15 V 10% or –12 V 5%, unless otherwise noted.)
Figure 1. Convert Start Timing
CE
t
HSR
t
HAR
t
HD
DATA
VA LI D
t
DD
25
15
t
CS
R/C
A
0
2
4
ns
ns
STS
DB11 – DB0
SSR
t
SRR
t
HIGH
IMPEDANCE
SAR
Figure 2. Read Cycle Timing
DB
N
3k
100pF
DB
N
HIGH-Z TO LOGIC 0HIGH-Z TO LOGIC 1
High-Z to Logic 1 High-Z to Logic 0
Figure 3a. Load Circuit for Access Time Test
DB
N
3k
LOGIC 1 TO HIGH-Z
100pF
DB
N
LOGIC 0 TO HIGH-Z
Logic 1 to High-Z Logic 0 to High-Z
Figure 3b. Load Circuit for Output Float Delay Test
–3–
= +5 V 10%,
t
HRR
HIGH
IMPEDANCE
t
HL
5V
3k
100pF
5V
3k
100pF
AD674B/AD774B
WARNING!
ESD SENSITIVE DEVICE
TIMING—STAND ALONE MODE (Figures 4a and 4b)
ParameterSymbol Min Typ Max Min Typ Max Unit
Data Access Timet
Low R/C Pulsewidtht
STS Delay from R/Ct
Data Valid After R/C Low t
STS Delay After Data Valid t
High R/C Pulsewidtht
Specifications subject to change without notice.
J, K, A, B Grades T Grade
DDR
HRL
DS
HDR
HS
HRH
5050ns
2525ns
30200 60030 200 600 ns
150150ns
150150 ns
200225 ns
ABSOLUTE MAXIMUM RATINGS*
VCC to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +16.5 V
to Digital Common . . . . . . . . . . . . . . . . . . . . 0 to –16.5 V
V
EE
V
to Digital Common . . . . . . . . . . . . . . . . . . . 0 to +7 V
LOGIC
Analog Common to Digital Common . . . . . . . . . . . . . . . ± 1 V
Digital Inputs to Digital Common . . . –0.5 V to V
Analog Inputs to Analog Common . . . . . . . . . . . . V
LOGIC
EE
+0.5 V
to V
CC
20 VIN to Analog Common . . . . . . . . . . . . . . . . . . . . . . ±24 V
REF OUT . . . . . . . . . . . . . . . . . . Indefinite Short to Common
*Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
t
HRL
R/C
t
DS
STS
t
C
t
HDR
DB11–DB0
DATA
VA LI D
HIGH–Z
DATA VAL ID
Flgure 4a. Standalone Mode Timing Low Pulse R/
R/C
STS
DB11–DB0
t
HRH
t
DDRtHDR
HIGH–ZHIGH–Z
DATA
VA LI D
t
DS
t
C
t
HL
Figure 4b. Standalone Mode Timing High Pulse for R/
t
HS
C
C
ORDERING GUIDE
ConversionINLPackagePackage
MIN
to T
)DescriptionOption
MAX
Model
l
TemperatureTime (max)(T
AD674BJN0°C to 70°C15 µs± 1 LSBPlastic DIPN-28
AD674BKN0°C to 70°C15 µs± 1/2 LSBPlastic DIPN-28
AD674BAR–40°C to +85°C15 µs± 1 LSBPlastic SOICR-28
AD674BBR–40°C to +85°C15 µs± 1/2 LSBPlastic SOICR-28
AD674BAD–40°C to +85°C15 µs± 1 LSBCeramic DIPD-28
AD674BBD–40°C to +85°C15 µs± 1/2 LSBCeramic DIPD-28
AD674BTD–55°C to +125°C15 µs±1 LSBCeramic DIPD-28
AD774BJN0°C to 70°C8 µs±1 LSBPlastic DIPN-28
AD774BKN0°C to 70°C8 µs± 1/2 LSBPlastic DIPN-28
AD774BAR–40°C to +85°C8 µs±1 LSBPlastic SOICR-28
AD774BBR–40°C to +85°C8 µs± 1/2 LSBPlastic SOICR-28
AD774BAD–40°C to +85°C8 µs± 1 LSBCeramic DIPD-28
AD774BBD–40°C to +85°C8 µs± 1/2 LSBCeramic DIPD-28
AD774BTD–55°C to +125°C8 µs± 1 LSBCeramic DIPD-28
NOTES
1
For details on grade and package offerings screened in accordance with MIL-STD-883, refer to the Analog Devices Military
Products Databook or the current AD674B/ AD774B/883B data sheet.
2
N = Plastic DIP; D = Hermetic DIP; R = Plastic SOIC.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD674B/AD774B features proprietary ESD protection circuitry, permanent damage may occur
on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
2
REV. C–4–
Loading...
+ 8 hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.