Analog Devices AD669 a Datasheet

Monolithic 16-Bit

a

FEATURES
Complete 16-Bit D/A Function

On-Chip Output Amplifier

High Stability Buried Zener Reference
Monolithic BiMOS II Construction
61 LSB Integral Linearity Error
15-Bit Monotonic over Temperature
Microprocessor Compatible

16-Bit Parallel Input

Double-Buffered Latches
Fast 40 ns Write Pulse
Unipolar or Bipolar Output
Low Glitch: 15 nV-s
Low THD+N: 0.009%
MIL-STD-883 Compliant Versions Available

GENERAL DESCRIPTION

The AD669 DACPORT® is a complete 16-bit monolithic D/A
converter with an on-board reference and output amplifier. It is
manufactured on Analog Devices’ BiMOS II process. This pro­cess allows the fabrication of low power CMOS logic functions
on the same chip as high precision bipolar linear circuitry. The
AD669 chip includes current switches, decoding logic, an output
amplifier, a buried Zener reference and double-buffered latches.

The AD669’s architecture insures 15-bit monotonicity over
temperature. Integral nonlinearity is maintained at ± 0.003%,
while differential nonlinearity is ± 0.003% max. The on-chip
output amplifier provides a voltage output settling time of 10 µs
to within 1/2 LSB for a full-scale step.

Data is loaded into the AD669 in a parallel 16-bit format. The
double-buffered latch structure eliminates data skew errors and
provides for simultaneous updating of DACs in a multi-DAC
system. Three TTL/LSTTL/5 V CMOS compatible signals con­trol the latches:

The output range of the AD669 is pin programmable and can
be set to provide a unipolar output range of 0 V to +10 V or a
bipolar output range of –10 V to +10 V.

The AD669 is available in seven grades: AN and BN versions
are specified from –40°C to +85°C and are packaged in a 28-pin
plastic DIP. The AR and BR versions are specified for –40°C to
+85°C operation and are packaged in a 28-pin SOIC. The SQ
version is specified from –55°C to +125°C and is packaged in a
hermetic 28-pin cerdip package. The AD669 is also available
compliant to MIL-STD-883. Refer to the AD669/883B data
sheet for specifications and test conditions.

CS, L1 and LDAC.

DACPORT

AD669

FUNCTIONAL BLOCK DIAGRAM

(MSB) (LSB)

DB15

6

CS

5

L1

23

LDAC

10k

27

REF IN

REF OUT

PRODUCT HIGHLIGHTS

28

10V REF

–V

EE

16-BIT LATCH

16-BIT LATCH

16-BIT DAC

2143

+V

CC

1. The AD669 is a complete voltage output 16-bit DAC with
voltage reference and digital latches on a single IC chip.

2. The internal buried Zener reference is laser trimmed to

10.000 volts with a ±0.2% maximum error. The reference
voltage is also available for external applications.

3. The AD669 is both dc and ac specified. DC specs include
±1 LSB INL error and ±1 LSB DNL error. AC specs include

0.009% THD+ N and 83 dB SNR. The ac specifications
make the AD669 suitable for signal generation applications.

4. The double-buffered latches on the AD669 eliminate data
skew errors while allowing simultaneous updating of DACs in
multi-DAC systems.

5. The output range is a pin-programmable unipolar 0 V to
+10 V or bipolar –10 V to +10 V output. No external compo­nents are necessary to set the desired output range.

6. The AD669 is available in versions compliant with MIL­STD-883. Refer to the Analog Devices Military Products
Databook or current AD669/883B data sheet for detailed
specifications.

DB0

227

AD669

+V

LL

DGND

10k

10.05k

AMP

26

25

24

SPAN/
BIP OFF

V

OUT

AGND

DACPORT is a registered trademark of Analog Devices, Inc.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] Fax: [phone]

AD669–SPECIFICATIONS

(@ TA = +258C,

VCC = +15 V, VEE = –15 V, VLL = +5 V,

unless otherwise noted)

Model AD669AN/AR AD669AQ/SQ AD669BN/BQ/BR

Min Typ Max Min Typ Max Min Typ Max Units

RESOLUTION 16 16 16 Bits
DIGITAL INPUTS (T

(Logic “1” ) 2.0 5.5 * * * * Volts

V

IH

V

(Logic “0” ) 0 0.8 * * * * Volts

IL

(VIH = 5.5 V) 610 **µA

I

IH

I

(VIL = 0 V) 610 **µA

IL

TRANSFER FUNCTION CHARACTERISTICS

MIN

to T

MAX

)

1

Integral Nonlinearity 62 * 61 LSB

to T

T

MIN

MAX

64 * 62 LSB

Differential Nonlinearity 62 * 61 LSB

to T

T

MIN

2

2, 5

(T

MAX

MIN

to T

) 25 15 15 ppm/°C

MAX

Monotonicity Over Temperature 14 14 15 Bits
Gain Error
Gain Drift

64 * 62 LSB

60.15 60.10 60.10 % of FSR

Unipolar Offset 65 65 62.5 mV

to T

Unipolar Offset Drift (T

MIN

) 533ppm/°C

MAX

Bipolar Zero Error 615 615 610 mV
Bipolar Zero Error Drift (T

MIN

to T

) 12 10 5 ppm/°C

MAX

REFERENCE INPUT

Input Resistance 7 10 13 ****** kΩ
Bipolar Offset Input Resistance 7 10 13 ****** kΩ

REFERENCE OUTPUT

Voltage 9.98 10.00 10.02 ****** Volts
Drift 25 15 15 ppm/°C
External Current

3

24 ** ** mA
Capacitive Load 1000 * * pF
Short Circuit Current 25 * * mA

OUTPUT CHARACTERISTICS

Output Voltage Range

Unipolar Configuration 0 +10 * * * * Volts

Bipolar Configuration –10 +10 * * * * Volts
Output Current 5 * * mA
Capacitive Load 1000 * * pF
Short Circuit Current 25 * * mA

POWER SUPPLIES

Voltage

4

V

CC

4

V

EE

V

LL

+13.5 +16.5 * * * * Volts
–13.5 –16.5 * * * * Volts
+4.5 +5.5 * * * * Volts

Current (No Load)

I

CC

I

EE

I

LL

+12 +18 ** ** mA
–12 –18 ** ** mA

@ VIH, VIL = 5, 0 V 0.3 2 ** ** mA
@ V

, VIL = 2.4, 0.4 V 3 7.5 ** ** mA

IH

Power Supply Sensitivity 1 3 * * * * ppm/%
Power Dissipation (Static, No Load) 365 625 * * mW

TEMPERATURE RANGE

Specified Performance (A, B) –40 +85 –40 +85 –40 +85 °C
Specified Performance (S) –55 +125 °C

NOTES

1

For 16-bit resolution, 1 LSB = 0.0015% of FSR = 15 ppm of FSR. For 15-bit resolution, 1 LSB = 0.003% of FSR = 30 ppm of FSR. For 14-bit resolution
1 LSB = 0.006% of FSR = 60 ppm of FSR. FSR stands for Full-Scale Range and is 10 V for a 0 V to + 10 V span and 20 V for a –10 V to +10 V span.

2

Gain error and gain drift measured using the internal reference. Gain drift is primarily reference related. See the Using the AD669 with the AD688 Reference section
for further information.

3

External current is defined as the current available in addition to that supplied to REF IN and SPAN/BIPOLAR OFFSET on the AD669.

4

Operation on ±12 V supplies is possible using an external reference like the AD586 and reducing the output range. Refer to the Internal/External Reference Use section.

5

Measured with fixed 50 Ω resistors. Eliminating these resistors increases the gain error by 0.25% of FSR (Unipolar mode) or 0.50% of FSR (Bipolar mode). Refer to
the Analog Circuit Connections section.

*Same as AD669AN/AR specification.
Specifications subject to change without notice.
Specifications in boldface are tested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All min and max specifica-

tions are guaranteed. Those shown in boldface are tested on all production units.

–2–

REV. A

AD669

DATA

LDAC

t

DStDH

CS

t

LW

t

LH

L1

t

CS

t

L1

DATA

t

DS

t

DH

CS AND/OR

L1, LDAC

TIE CS AND/OR

L1 TO GROUND OR TOGETHER WITH LDAC

t

LOW

t

HIGH

AC PERFORMANCE CHARACTERISTICS

(With the exception of Total Harmonic Distortion + Noise and Signal-to-Noise
Ratio, these characteristics are included for design guidance only and are not subject to test. THD+N and SNR are 100% tested.
T

≤ TA ≤ T

MIN

, VCC = +15 V, VEE = –15 V, VLL = +5 V except where noted.)

MAX

Parameter Limit Units Test Conditions/Comments

Output Settling Time 13 µs max 20 V Step, TA = +25°C

(Time to ±0.0008% FS 8 µs typ 20 V Step, T
with 2 kΩ, 1000 pF Load) 10 µs typ 20 V Step, T

= +25°C

A

≤ TA ≤ T

MIN

MAX

6 µs typ 10 V Step, TA = +25°C
8 µs typ 10 V Step, T

2.5 µs typ 1 LSB Step, T

≤ TA ≤ T

MIN

MIN

≤ TA ≤ T

MAX

MAX

Total Harmonic Distortion + Noise

A, B, S Grade 0.009 % max 0 dB, 1001 Hz; Sample Rate = 100 kHz; T
A, B, S Grade 0.07 % max –20 dB, 1001 Hz; Sample Rate = 100 kHz; T

= +25°C

A

= +25°C

A

A, B, S Grade 7.0 % max –60 dB, 1001 Hz; Sample Rate = 100 kHz; TA = +25°C

Signal-to-Noise Ratio 83 dB min TA = +25°C

Digital-to-Analog Glitch Impulse 15 nV-s typ DAC Alternately Loaded with 8000H and 7FFFH

Digital Feedthrough 2 nV-s typ DAC Alternately Loaded with 0000H and FFFFH; CS High
Output Noise Voltage 120 nV/√

Hz typ Measured at V

, 20 V Span; Excludes Reference

OUT

Density (1 kHz – 1 MHz)

Reference Noise 125 nV/√Hz typ Measured at REF OUT

Specifications subject to change without notice.
Specifications in boldface are tested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels. All min and
max specifications are guaranteed. Those shown in boldface are tested on all production units.

TIMING CHARACTERISTICS

VCC = +15 V, VEE = –15 V, VLL = +5 V, VHI = 2.4 V, VLO = 0.4 V

Limit Limit

Limit –408C to –558C to

Parameter +258C +858C +1258C Units

(Figure la)
t

CS

t

LI

t

DS

t

DH

t

LH

t

LW

(Figure lb)
t

LOW

t

HIGH

t

DS

t

DH

Specifications subject to change without notice.
Specifications in boldface are tested on all production units at final electrical

test. Results from those tests are used to calculate outgoing quality levels. All
min and max specifications are guaranteed. Those shown in boldface are tested
on all production units.

REV. A

40 50 55 ns min
40 50 55 ns min
30 35 40 ns min
10 10 15 ns min
90 110 120 ns min
40 45 45 ns min

130 150 165 ns min
40 45 45 ns min
120 140 150 ns min
10 10 15 ns min

–3–

Figure 1a. AD669 Level Triggered Timing Diagram

Figure 1b. AD669 Edge Triggered Timing Diagram

AD669

WARNING!

ESD SENSITIVE DEVICE

FREQUENCY – Hz

THD + N – %

10

0.001

0.01

0.1

1

100 100001000

–60dB

–20dB

0dB

ESD SENSITIVITY

The AD669 features input protection circuitry consisting of large transistors and polysilicon series
resistors to dissipate both high-energy discharges (Human Body Model) and fast, low-energy pulses
(Charged Device Model). Per Method 3015.2 of MIL-STD-883: C, the AD669 has been classified
as a Class 2 device.

Proper ESD precautions are strongly recommended to avoid functional damage or performance
degradation. Charges as high as 4000 volts readily accumulate on the human body and test
equipment and discharge without detection. Unused devices must be stored in conductive foam or
shunts, and the foam should be discharged to the destination socket before devices are removed.
For further information on ESD precautions, refer to Analog Devices’ ESD Prevention Manual.

ABSOLUTE MAXIMUM RATINGS

*

VCC to AGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +17.0 V

V

to AGND . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –17.0 V

EE

V

to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V

LL

AGND to DGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±1 V

Digital Inputs (Pins 5 through 23) to DGND . . . . . . –1.0 V to

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0 V

REF IN to AGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10.5 V

Span/Bipolar Offset to AGND . . . . . . . . . . . . . . . . . . . ±10.5 V

REF OUT, V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

. . . . . . Indefinite Short To AGND, DGND,

OUT

, VEE, and V

CC

LL

Power Dissipation (Any Package)

To +60°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000 mW

Derates above +60°C . . . . . . . . . . . . . . . . . . . . . .8.7 mW/°C

Storage Temperature . . . . . . . . . . . . . . . . . . . –65°C to +150°C

Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . +300°C

*Stresses above those listed under “Absolute Maximum Ratings” may cause

permanent damage to the device. This is a stress rating only, and functional
operation of the device at these or any other conditions above those indicated in
the operational section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.

ORDERING GUIDE

Linearity Gain

Temperature Error Max TC max Package Package

Model Range T

MIN–TMAX

AD669AN –40°C to +85°C ±4 LSB 25 Plastic DIP N-28
AD669AR –40°C to +85°C ±4 LSB 25 SOIC R-28
AD669BN –40°C to +85°C ±2 LSB 15 Plastic DIP N-28
AD669BR –40°C to +85°C ±2 LSB 15 SOIC R-28
AD669AQ –40°C to +85°C ±4 LSB 15 Cerdip Q-28
AD669BQ –40°C to +85°C ±2 LSB 15 Cerdip Q-28
AD669SQ –55°C to +125°C ±4 LSB 15 Cerdip Q-28
AD669/883B** –55°C to +125°C** ** ** **

**N = Plastic DIP; Q = Cerdip; R = SOIC.

**Refer to AD669/883B military data sheet.

PIN CONFIGURATION

V

EE

V

CC

V

DGND

CS

DB15

DB14

DB13

DB12

DB11

DB10

DB9

DB8

1

2

3

LL

4

5

L1

6

7

8

9

10

11

12

13

14

AD669

TOP VIEW

(Not to Scale)

28

27

26

25

24

23

22

21

20

19

18

17

16

15

ppm/8C Description Option*

REF OUT

REF IN
SPAN/BIP

OFFSET
V

OUT

AGND

LDAC

DB0

DB1

DB2

DB3

DB4

DB5

DB6

DB7

10

1

0.1

THD + N – %

0.01

0.001
–50

THD+N vs. Temperature

–25

TEMPERATURE – °C

50250

–60dB

–20dB

0dB

10075

125

–4–

THD+N vs. Frequency

REV. A