Analog Devices AD5220 Datasheet

Increment/Decrement
a
FEATURES 128 Position Potentiometer Replacement 10 k, 50 k, 100 k Very Low Power: 40 A Max Increment/Decrement Count Control
APPLICATIONS Mechanical Potentiometer Replacement Remote Incremental Adjustment Applications Instrumentation: Gain, Offset Adjustment Programmable Voltage-to-Current Conversion Programmable Filters, Delays, Time Constants Line Impedance Matching Power Supply Adjustment
GENERAL DESCRIPTION
The AD5220 provides a single channel, 128-position digitally controlled variable resistor (VR) device. This device performs the same electronic adjustment function as a potentiometer or variable resistor. These products were optimized for instrument and test equipment push-button applications. A choice between bandwidth or power dissipation are available as a result of the wide selection of end-to-end terminal resistance values.
The AD5220 contains a fixed resistor with a wiper contact that taps the fixed resistor value at a point determined by a digitally controlled UP/DOWN counter. The resistance between the wiper and either end point of the fixed resistor provides a con­stant resistance step size that is equal to the end-to-end resis­tance divided by the number of positions (e.g., R
128 = 78 ). The variable resistor offers a true adjustable value
of resistance, between the A terminal and the wiper, or the B terminal and the wiper. The fixed A-to-B terminal resistance of
10 k, 50 k, or 100 k has a nominal temperature coefficient of 800 ppm/°C.
The chip select CS, count CLK and U/D direction control inputs set the variable resistor position. These inputs that con­trol the internal UP/DOWN counter can be easily generated with mechanical or push button switches (or other contact closure devices). External debounce circuitry is required for the nega­tive-edge sensitive CLK pin. This simple digital interface elimi­nates the need for microcontrollers in front panel interface designs.
The AD5220 is available in both surface mount (SO-8) and the 8-lead plastic DIP package. For ultracompact solutions selected
models are available in the thin µSOIC package. All parts are
guaranteed to operate over the extended industrial temperature
range of –40°C to +85°C. For 3-wire, SPI compatible inter-
face applications, see the AD7376/AD8400/AD8402/AD8403 products.
STEP
= 10 kΩ/
Digital Potentiometer
AD5220
FUNCTIONAL BLOCK DIAGRAM
V
CLK
CS
U/D
UP/DOWN
INCREMENT
EN
POR
DOWN
CNTR
40
H
UP/
RS
D E
7
C O D E
AD5220
+5V
Figure 1. Typical Push-Button Control Application
UPCOUNT DETAIL
= 5.5V
V
DD
= 5.5V
V
A
V
= 0V
50mV/DIV
5V/DIV
B
f = 100kHz
Figure 2a. Stair-Step Increment Output
VDD = 5.5V
= 5.5V
V
A
= 0V
V
B
f = 60kHz
COUNT 00
H
f
= 60kHz
CLK
Figure 2b. Full-Scale Up/Down Count
A
W B GND
CS
U/D
CLK
AD5220
v 3FH v 00
DD
V
WB
CLK
H
V
WR
REV. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1998
AD5220–SPECIFICATIONS
(VDD = +3 V 10% or +5 V 10%, VA = +VDD, VB = 0 V, –40C < TA < +85C unless
ELECTRICAL CHARACTERISTICS
Parameter Symbol Conditions Min Typ1Max Units
DC CHARACTERISTICS RHEOSTAT MODE Specifications Apply to All VRs
Resistor Differential NL
Resistor Nonlinearity
Nominal Resistor Tolerance ∆RT Resistance Temperature Coefficient ∆R
Wiper Resistance R
DC CHARACTERISTICS POTENTIOMETER DIVIDER MODE Specifications Apply to All VRs
Resolution N 7 Bits Integral Nonlinearity
Differential Nonlinearity Error
Voltage Divider Temperature Coefficient ∆V
Full-Scale Error V Zero-Scale Error V
RESISTOR TERMINALS
Voltage Range Capacitance Capacitance
4
5
A, B C
5
WC
Common-Mode Leakage I
DIGITAL INPUTS AND OUTPUTS
Input Logic High V Input Logic Low V Input Current I Input Capacitance
POWER SUPPLIES
Power Supply Range V Supply Current I Power Dissipation Power Supply Sensitivity PSS 0.004 0.015 %/%
DYNAMIC CHARACTERISTICS
Bandwidth –3 dB BW_10K R
Total Harmonic Distortion THD
Settling Time t
V
W
Resistor Noise Voltage e
INTERFACE TIMING CHARACTERISTICS Applies to All Parts
Input Clock Pulsewidth tCH, t
CS to CLK Setup Time t CS Rise to Clock Hold Time t
U/D to Clock Fall Setup Time t
NOTES
1
Typicals represent average readings at +25°C and V
2
Resistor position nonlinearity error R-INL is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. See Figure 29 test circuit.
3
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output D/A converter. V DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions. See Figure 28 test circuit.
4
Resistor terminals A, B, W have no limitations on polarity with respect to each other.
5
Guaranteed by design and not subject to production test.
6
P
is calculated from (I
DISS
7
Bandwidth, noise and settling time are dependent on the terminal resistance value chosen. The lowest R value results in the fastest settling time and highest band­width. The highest R value results in the minimum overall power consumption.
8
All dynamic characteristics use VDD = +5 V.
9
See timing diagrams for location of measured values. All input control voltages are specified with tR = tF = 1 ns (10% to 90% of VDD) and timed from a voltage level of 1.6 V. Switching characteristics are measured using both VDD = +3 V or +5 V.
Specifications subject to change without notice.
2
2
3
3
5
6
5, 7, 8
× V
). CMOS logic level inputs result in minimum power dissipation.
DD
DD
otherwise noted)
R-DNL RWB, VA = NC, R
R-INL RWB, VA = NC, R
/TV
AB
W
INL R
DNL R
/T Code = 40
W
WFSE
WZSE
VA, VB, V
A, CB
W
CM
IH
IL
IL
C
IL
DD
DD
P
DISS
BW_50K R BW_100K R
W
S
NWB
CL
CSS
CSH
UDS
= +5 V.
DD
, VA = NC, R
R
WB
, VA = NC, R
R
WB
= +25°C –30 +30 %
A
= V
AB
IW = VDD/R, V
AB
R
AB
AB
R
AB
Code = 7F Code = 00
W
, Wiper = No Connect 800 ppm/°C
DD
DD
= 10 k –1 ±0.5 +1 LSB = 50 k, 100 k –0.5 ±0.2 +0.5 LSB = 10 k –1 ±0.4 +1 LSB = 50 k, 100 k –0.5 ±0.1 +0.5 LSB
H
H
H
f = 1 MHz, Measured to GND, Code = 40 f = 1 MHz, Measured to GND, Code = 40 VA = VB = V
W
VDD = +5 V/+3 V 2.4/2.1 V VDD = +5 V/+3 V 0.8/0.6 V V
= 0 V or +5 V ±1 µA
IN
VIH = +5 V or VIL = 0 V, V VIH = +5 V or VIL = 0 V, V
= 10 k, Code = 40
AB
= 50 k, Code = 40
AB
= 100 k, Code = 40
AB
VA =1 V rms + 2.5 V dc, VB = 2.5 V dc, f = 1 kHz 0.002 % VA = VDD, VB = 0 V, 50% of Final Value,
10K/50K/100K 0.6/3/6 µs
R
= 5 k, f = 1 kHz 14 nV/Hz
WB
5, 9
Clock Level High or Low 25 ns
= 10 k –1 ±0.4 +1 LSB
AB
= 50 k or 100 k –0.5 ±0.1 +0.5 LSB
AB
= 10 k –1 ±0.5 +1 LSB
AB
= 50 k or 100 k –0.5 ±0.1 +0.5 LSB
AB
= +3 V or +5 V 40 100
20 ppm/°C
–2 –0.5 0 LSB 0 +0.5 +1 LSB
0V
H
H
10 pF 48 pF
DD
7.5 nA
5pF
2.7 5.5 V
= +5 V 15 40 µA
DD
= +5 V 75 200 µW
DD
H
H
H
650 kHz 142 kHz 69 kHz
20 ns 20 ns 10 ns
= VDD and VB = 0 V.
A
V
–2–
REV. 0
AD5220
WARNING!
ESD SENSITIVE DEVICE
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
CLK
U/D
A1
GND
V
DD
CS
B1 W1
AD5220
ABSOLUTE MAXIMUM RATINGS*
(T
= +25°C, unless otherwise noted)
A
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V, +7 V
, VB, VW to GND . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V, V
V
A
AX–BX, AX–WX, BX–W
. . . . . . . . . . . . . . . . . . . . . . ±20 mA
X
Digital Input Voltage to GND . . . . . . . . . . . 0 V, V
DD
DD
+ 0.3 V
Operating Temperature Range . . . . . . . . . . . –40°C to +85°C
Maximum Junction Temperature (T
MAX) . . . . . . . .+150°C
J
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . +300°C
Package Power Dissipation . . . . . . . . . . . . . . (T
Thermal Resistance θ
JA
max–T
J
)/θ
A
JA
P-DIP (N-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103°C/W
SOIC (SO-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158°C/W
µSOIC (RM-8) . . . . . . . . . . . . . . . . . . . . . . . . . . . 206°C/W
*Stresses above those listed under Absolute Maximum Ratings may cause
permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Table I. Truth Table
CS CLK U/D Operation
L t H Wiper Increment Toward Terminal A L t L Wiper Decrement Toward Terminal B H X X Wiper Position Fixed
1
CS
CLK
U/D
0
1 0
1 0
t
CSS
t
CH
t
CL
t
UDS
t
CSH
Figure 3. Detail Timing Diagram
PIN CONFIGURATION
PIN FUNCTION DESCRIPTIONS
Pin No. Name Description
1 CLK Serial Clock Input, Negative Edge Triggered 2U/D UP/DOWN Direction Increment Control 3 A1 Terminal A1 4 GND Ground 5 W1 Wiper Terminal 6 B1 Terminal B1 7 CS Chip Select Input, Active Low 8VDDPositive Power Supply
ORDERING GUIDE
Model k Temperature Range Package Descriptions Package Options
AD5220BN10 10 –40°C to +85°C 8-Lead Plastic DIP N-8 AD5220BR10 10 –40°C to +85°C 8-Lead (SOIC) SO-8 AD5220BRM10 10 –40°C to +85°C 8-Lead µSOIC RM-8 AD5220BN50 50 –40°C to +85°C 8-Lead Plastic DIP N-8 AD5220BR50 50 –40°C to +85°C 8-Lead (SOIC) SO-8 AD5220BRM50 50 –40°C to +85°C 8-Lead µSOIC RM-8 AD5220BN100 100 –40°C to +85°C 8-Lead Plastic DIP N-8 AD5220BR100 100 –40°C to +85°C 8-Lead (SOIC) SO-8 AD5220BRM100 100 –40°C to +85°C 8-Lead µSOIC RM-8
NOTE The AD5220 die size is 37 mil × 54 mil, 1998 sq mil; 0.938 mm × 1.372 mm, 1.289 sq mm. Contains 754 transistors. Patent Number 5495245 applies.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD5220 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–3–REV. 0
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