SOT23 NPN PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 1995
PARTMARKING DETAILS BCW71 K1
BCW72 K2
BCW71R K4
BCW72R K5
BCW71
BCW72
C
E
B
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation at T
=25°C P
amb
CBO
CEO
EBO
CM
C
TOT
50 V
45 V
5V
200 mA
100 mA
330 mW
Operating and Storage Temperature Range tj:tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Cut-Off
Current
Base-Emitter Voltage V
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Static Forward BCW71
Current Transfer
Ratio BCW72
Transition Frequency f
Collector Capacitance C
I
CBO
BE
V
CE(sat)
V
BE(sat)
h
FE
T
TC
550 700 mV IC=2.0mA, VCE=5V
110
200
100
10
120
250 mVmVIC=10mA, IB=0.5mA
210
750
850
90
220
150
450
300 MHz IC =10mA, VCE =5V
4pFI
Noise Figure N 10 dB
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
I
nA
µA
=0, VCB=20V
E
I
=0,
E
=20V,Tj=100°C
V
CB
I
=50mA, IB=2.5mA
C
mVmVIC=10mA, IB=0.5mA
=50mA, IB=2.5mA
I
C
I
=10µA, V
C
I
=2mA, VCE =5V
C
=10µA, V
I
C
=2mA, VCE =5V
I
C
CE
CE
=5V
=5V
f =35MHz
=Ie =0, VCB =10V
E
f =1MHz
=200µA, V
I
C
=2KΩ, f =1KHz
R
S
B =200Hz
CE
Spice parameter data is available upon request for these devices
PAGE NO
=5V
BCW71
BCW72
DIM Millimeters Inches
Min Max Min Max
E
B
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C 1.10 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.37