Winbond Electronics W55F20, W55F05, W55F10 Datasheet

GENERAL DESCRIPTION

W55FXX

SERIAL FLASH EEPROM SERIES

The W55FXX is a serial input/output flash EEPROM series that is typically used as the memory cell
of a W51300 (voice recorder controller) or the ROM code emulator for the PowerSpeech

TM

series.
The single voltage supply eliminates the need for an extra pump circuit during programming and
erasing.

FEATURES

• Provides CLK, ADDR, and DATA pins to operate with Winbond PowerSpeech

• 512K/1M/2M memory sizes available

• Directly cascadable for longer duration

• Fast frame-write operation

− Frame (32 bits) program cycle time: 400 µS (typ.)

• Fast whole-chip-erase duration: 50 mS (max.)

• Read data access time: 500 nS (max.)

• Program/erase cycles: 10,000 (typ.)

• Data retention: 10 years (typ.)

• Low power consumption:

− Operating: 5 mA (typ.)

− Standby: 2 µA (typ.)

TM

series

PIN CONFIGURATION

EOP

CTRL

V

ADDR

MODE

1

2

SS

3

4

8

V

7

6

5

DD

CLK

DATA

Publication Release Date: August 1996

- 1 - Revision A2

W55FXX

PIN DESCRIPTION

NO. PIN NAME I/O DESCRIPTION

1 EOP O End of process signal output

2 CTRL I Enable signal for program and erase operations when MODE = 0

Input clock for mode counter when MODE = 1

3VSS I Ground

4 ADDR I Input clock for start adress shift-in

5 DATA I/O Bidirectional data line

6 CLK I Input clock for data write-in and read-out

7VDD I Positive voltage supply

8 MODE I Mode select control pin

BLOCK DIAGRAM

CLK

DATA

ADDR

CTRL

MODE

EOP

shift register

/address counter

Decoder

Write-in Buffer

Control
Circuit

page-code cells

/page-code flag

/comparator

Output
Buffer

Core
Array

POR
Circuit

Pump
Circuit

- 2 -

W55FXX

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL CONDITION RATED VALUE UNIT

Operating Temp. TOPR - 0 to +70

Storage Temp. TSTG - -65 to +150

Power Supply VDD−VSS - -0.3 to +7.0 V

Input DC Voltage VDC All pins -0.5 to VDD +1.0 V

Transient Voltage (< 20 nS) VTRAN All pins -1.0 to VDD +1.0 V

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the
device.

DC CHARACTERISTICS

(VDD = 4.5V, VSS = 0V, TA = 25° C)

PARAMETER SYMBOL CONDITIONS LIMITS UNIT

MIN. TYP. MAX.

Operating voltage VDD - 2.4

(Note)

Standby current ISB All inputs = GND

-24

DATA & EOP open

Operating current IOP In read mode

-510mA

DATA & EOP open

F

OSC = 1 MHz

Input voltage High VIH All input pins 2.0 VDD V

Low VIL -0.3 - 0.8 V

Output current Sink IOL VOL = 0.5V 2.5 5 - mA

Drive IOH VOH = 4.0V -2.5 -5 - mA

Input leakage current

ILI1 VIN = 4.5V - - 4.5

of CTRL, MODE

Input leakage current

ILI2 VIN = 0V - - -4.5

of DATA

Note: For been working with W52900, the minimum operating voltage couldn't be less than 3.6 volt.

4.5 5.5 V

°C

°C

µA

µA

µA

Publication Release Date: August 1996

- 3 - Revision A2

W55FXX

AC CHARACTERISTICS

DD = 4.5V, VSS = 0V, TA = 25° C)

(V

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNIT

MODE pulse width TMP -1--

CTRL pulse width TWP Page coding mode 400 - 700

Clock frequency of ADDR FADDR - - - 1 MHz

Clock frequency of CLK FCLK - - - 1 MHz

Clock frequency of CTRL FCTRL - - - 1 MHz

Interval between ADDR end

TI Read/Write mode 1 - -

& CLK begin

Interval between CLK &

TGCC Write mode 1 - -

CTRL

Interval between ADDR &

TGCA Page coding mode 1 - -

CTRL

Interval between addressing

TAE Block erase mode 1 - -

end & block-erase begin

Interval between MODE

MB Mode selection 500 - - nS

T
rising edge & CTRL clock
begin

Interval between CTRL clock

TME Mode selection 500 - - nS
end & MODE falling edge

Interval between MODE

GM -1--

T
falling edge & another pin
active

Data access time TRA Read mode - - 500 nS

Data set up time TWS Write mode 250 - - nS

TAS - 250 - - nS

Data hold time TRH Read mode 0 - - nS

TWH Write mode 10 - - nS

TAH -10--nS

Programming duration TPR Write mode 400 - -

Whole-chip-erase time TWE Whole-chip-erase

45 - 50 mS

mode

Block-erase time TBE Block-erase mode 40 - 45 mS

µS

µS

µS

µS

µS

µS

µS

µS

- 4 -

TIMING WAVEFORM

W55FXX

Read Cycle

1/F

CLK

CLK

DATA

T

RA

Address Shift-in Cycle

1/F

ADDR

ADDR

DATA

T

AS

Page-code Cell Read Out Cycle

1/F

CTRL

Write Cycle

1/F

CLK

CLK

DATA

T

T

WH

T

RH

WS

Mode Select Duration

MODE

CTRL

T

AH

1/F

T

MB

CTRL

T

ME

CTRL

DATA

TT

RA

RH

Note: The duty cycle of any clock is 50%.

Publication Release Date: August 1996

- 5 - Revision A2

APPLICATION CIRCUITS (for reference only)

For Voice Recorder Applications

W51300

EOP

ADDR

DATA

CLK

CTRL

MODE

W51300

EOP

ADDR

DATA

CLK

CTRL

MODE

W55FXX

ADDR

EOP

DATA

MODE

CLK

CTRL

W55FXX

ADDR

EOP

DATA

MODE

CLK

CTRL

W55FXX

ADDR

EOP

DATA

MODE

CLK

CTRL

W55FXX

ADDR

EOP

DATA

MODE

CLK

CTRL

W55FXX

For PowerSpeech Applications

W5280/
W52900

ADDR

DATA

CLK

ORDERING INFORMATION

PART NO. MEMORY SIZE

W55F05 512K BITS

W55F10 1M BITS

W55F20 2M BITS

W55FXX

ADDR

DATA

MODE

CLK

CTRL

EOP

- 6 -

W55FXX

Headquarters

No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: [phone]
FAX: [phone]
http://www.winbond.com.tw/
Voice & Fax-on-demand: 886-2-7197006

Winbond Electronics (H.K.) Ltd.

Rm. 803, World Trade Square, Tower II,
123 Hoi Bun Rd., Kwun Tong,
Kowloon, Hong Kong
TEL: [phone]
FAX: [phone]

Taipei Office

11F, No. 115, Sec. 3, Min-Sheng East Rd.,
Taipei, Taiwan
TEL: [phone]
FAX: [phone]

Note: All data and specifications are subject to change without notice.

Winbond Electronics North America Corp.
Winbond Memory Lab.
Winbond Microelectronics Corp.
Winbond Systems Lab.

2730 Orchard Parkway, San Jose,
CA 95134, U.S.A.
TEL: [phone]

FAX: [phone]

Publication Release Date: August 1996

- 7 - Revision A2