White Electronic Designs EDI8L32128V20AI, EDI8L32128V20AC, EDI8L32128V15AI, EDI8L32128V15AC, EDI8L32128V12AI Datasheet

Features

128Kx32 bit CMOS Static
Analog SHARC

• ADSP-21060L

• ADSP-21062L

Random Access Memory Array

• Fast Access Times: 12,15 and 20ns

• User Configurable Organization

• Master Output Enable and Write Control

• TTL Compatible Inputs and Outputs

• Fully Static, No Clocks

Surface Mount Package

• 68 Lead PLCC, No. 99 (JEDEC MO-47AE)

• Small Footprint, 0.990 Sq. In.

• Multiple Ground Pins for Maximum

Single 3.3V (±5%) Supply Operation

TM

External Memory Solution

with Minimal Additional Logic

Noise Immunity

EDI8L32128V

128Kx32 SRAM 3.3 Volt

128Kx32 CMOS High Speed
Static RAM

The EDI8L32128V is a high speed, 3.3 volt, four megabit
density Static RAM. The device is available with access
times of 12, 15 and 20ns, allowing the device to support
60MHz DSPs with no wait states. The high speed, 3.3V
supply voltage and byte configurability make the device
ideal for interfacing with Analog Devices ADSP-21062L or
ADSP-21060L SHARC DSPs.
The device can be configured as a 128Kx32 and used to
create a single chip external data memory solution for the
SHARC (figure 1). Providing a 51% space savings when
compared to four 128Kx8, 400mil wide plastic SOJs. the
EDI8L32128V has a 10pf load on the data lines vs. 24pf for
four plastic SOJs. Memory upgrades in the same footprint
can be accomplished with the EDI8L32256V (256Kx32) or
the EDI8L32512V (512KX32). This is covered in detail in the
application report "The EDI's x32 MCM-L SRAM Family:
Integrated Memory Solution for the Analog SHARC DSP"
Alternatively the device's chip enables can configure it as a
256Kx16. A 256Kx48 program memory array for the
SHARC is created using three devices (figure 2). If this
memory is too deep, two 128Kx24's (EDI8L24128V) can be
used to create a 128Kx48 memory array.

Pin Configurations and Block Diagram

9 DQ16

8NC

7NC

6E3\

5E2\

4E1\

3EØ\

2NC

1VCC

68 NC

67 NC

66 G\

65 W\

64 A16

63 A15

62 A14

61 DQ15

DQ14

DQ17

10

DQ18

11

DQ19

12

VSS

13

DQ20

14

DQ21

15

DQ22

16

DQ23

17

VCC

18

DQ24

19

DQ25

20

DQ26

21

DQ27

22

VSS

23

DQ28

24

DQ29

25

DQ30

26

A6 28

A5 29

A4 30

A3 31

A2 32

A1 33

DQ31 27

Note: Pin 2 & 67 on the 64Kx32 (EDI8L3265C) and the 256Kx32 (EDI8L32256C)
are word select pins.

AØ 34

• One Research Drive • Westborough, MA 01581 USA • 508-366-5151 • FAX [phone] •

A9 40

A13 36

A12 37

A11 38

A10 39

VCC 35

60

DQ13

59

DQ12

58

VSS

57

DQ11

56

DQ10

55

DQ9

54

DQ8

53

VCC

52

DQ7

51

DQ6

50

DQ5

49

DQ4

48

VSS

47

DQ3

46

DQ2

45

DQ1

44

A8 41

A7 42

DQØ 43

Electronic Designs Incorporated

http://www.electronic-designs.com

EDI8L32128V Rev. 1 4/97 ECO #8366

Note: Solder Reflow temperature should not exceed 260°C for 10 seconds

Pin Names

AØ-A16 Address Inputs
EØ-E3 Chip Enables (One per Byte)
W Master Write Enable
G Master Output Enable
DQØ-DQ31 Common Data Input/Output
VCC Power (+3.3V±10%)
VSS Ground
NC No Connection

AØ-A16

17

G

W

EØ

E1
E2
E3

1

128Kx32

Memory

Array

DQØ-DQ7
DQ8-DQ15
DQ16-DQ23
DQ24-DQ31

Absolute Maximum Ratings*

Voltage on any pin relative to VSS -0.5V to 4.6V
Operating Temperature TA (Ambient)
Commercial 0°C to + 70°C
Industrial -40°C to +85°C
Storage Temperature -55°C to +125°C

Recommended DC Operating Conditions

Parameter Sym Min Typ Max Units

Supply Voltage VCC 3.135V 3.3 3.465V V
Supply Voltage VSS 0 0 0 V
Input High Voltage VIH 2.2 -- VCC+0.3 V
Input Low Voltage VIL -0.3 -- 0.8 V

Power Dissipation 3 Watts
Output Current. 20 mA
Junction Temperature, TJ 175°C

AC Test Conditions

Input Pulse Levels VSS to 3.0V

*Stress greater than those listed under "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions greater than those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.

DC Electrical Characteristics

Input Rise and Fall Times 5ns
Input and Output Timing Levels 1.5V
Output Load Figure 1

(note: For TEHQZ,TGHQZ and TWLQZ, CL = 5pF) (see figure 2)

Figure 1 Figure 2

Z0 = 50 Ω

Q

65 pF

RL = 50 Ω

VL = 1.5V

Dout

353 Ω

Parameter Sym Conditions Min Max Units

12 15 20 ns

Operating Power Supply Current ICC1 W= VIL, II/O = 0mA, 680 660 620 mA

Min Cycle

Standby (TTL) Supply Current ICC2 E • VIH, VIN- VIL or 120 120 120 mA

VIN • VIH, f=ØMHz
Full Standby CMOS ICC3 E • VCC-0.2V 40 40 40 mA
Supply Current VIN • VCC-0.2V or

VIN - 0.2V
Input Leakage Current ILI VIN = 0V to VCC ±10 µA
Output Leakage Current ILO V I/O = 0V to VCC ±10 µA
Output High Volltage VOH IOH = -4.0mA 2.4 V
Output Low Voltage VOL IOL = 8.0mA 0.4 V

VCC

319 Ω

5 pF

Typical: TA = 25°C, VCC = 3.3V

Truth Table

G E W Mode Output Power

X H X Standby High Z
H L H Output Deselect High Z ICC1
L L H Read DOUT ICC1
X L L Write DIN ICC1

EDI8L32128V

128Kx32 SRAM 3.3 Volt

ICC2,ICC3

EDI8L32128V Rev. 1 4/97 ECO #8366

Capacitance

(f=1.0MHz, VIN=VCC or VSS)

Parameter Sym Max Unit

Address Lines CA 40 pF
Data Lines CD/Q 10 pF
Write & Output Enable Lines
Chip Enable Lines EØ-E3 8 pF

These parameters are sampled, not 100% tested.

2

W, G 40 pF